ER1000F – ER1006F WTE POWER SEMICONDUCTORS 10A ISOLATION SUPER-FAST GLASS PASSIVATED RECTIFIER Features ! Glass Passivated Die Construction ! ! ! ! ! Super-Fast Switching for High Efficiency High Current Capability C Low Reverse Leakage Current High Surge Current Capability G Plastic Material has UL Flammability Classification 94V-O D B Mechanical Data ! ! ! ! ! ! A PIN1 2 F Case: ITO-220A Full Molded Plastic Terminals: Plated Leads Solderable per MIL-STD-202, Method 208 Polarity: See Diagram Weight: 2.24 grams (approx.) Mounting Position: Any Marking: Type Number ITO-220A Dim Min Max A 14.9 15.1 B — 10.5 C 2.62 2.87 D 3.56 4.06 E 13.46 14.22 F 0.68 0.94 G 3.74 Ø 3.91 Ø H 5.84 6.86 I 4.44 4.70 J 2.54 2.79 K 0.35 0.64 L 1.14 1.40 P 4.95 5.20 All Dimensions in mm E P I L H PIN 1+ J PIN 2 - K Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Rectified Output Current ER 1000F ER ER ER 1001F 1001AF 1002F VRRM VRWM VR 50 100 150 VR(RMS) 35 70 105 ER 1003F ER 1004F ER 1006F Unit 200 300 400 600 V 140 210 280 420 V IO 10 A Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) IFSM 150 A Forward Voltage @IF = 10A VFM @TA = 25°C @TA = 100°C IRM Peak Reverse Current At Rated DC Blocking Voltage @TC = 105°C Symbol 0.95 1.3 1.7 10 500 V µA Reverse Recovery Time (Note 1) trr 35 50 nS Typical Junction Capacitance (Note 2) Cj 70 50 pF Operating and Storage Temperature Range Tj, TSTG -65 to +150 °C Note: 1. Measured with IF = 0.5A, IR = 1.0A, IRR = 0.25A. 2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C. ER1000F – ER1006F 1 of 3 © 2002 Won-Top Electronics IF, INSTANTANEOUS FORWARD CURRENT (A) I(AV), AVERAGE FORWARD CURRENT (A) 10 8 6 4 2 0 0 50 100 100 1000F - 1002F 1006F 1.0 Pulse width = 300µs 2% duty cycle 0.1 150 0.2 TC, CASE TEMPERATURE (°C) Fig. 1 Forward Current Derating Curve 0.6 1.0 1.4 VF, INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 2 Typical Forward Characteristics 180 400 8.3 ms single half-sine-wave JEDEC method 150 1000F - 1002F Cj, CAPACITANCE (pF) IFSM, PEAK FORWARD SURGE CURRENT (A) 1003F - 1004F 10 120 90 60 100 1003F - 1006F 30 10 0 1 10 0.1 100 NUMBER OF CYCLES AT 60Hz Fig. 3 Max Non-Repetitive Surge Current ER1000F – ER1006F 1.0 10 100 VR, REVERSE VOLTAGE (V) Fig. 4 Typical Junction Capacitance 2 of 3 © 2002 Won-Top Electronics ORDERING INFORMATION Product No. Package Type Shipping Quantity ER1000F ITO-220A 50 Units/Tube ER1001F ITO-220A 50 Units/Tube ER1001AF ITO-220A 50 Units/Tube ER1002F ITO-220A 50 Units/Tube ER1003F ITO-220A 50 Units/Tube ER1004F ITO-220A 50 Units/Tube ER1006F ITO-220A 50 Units/Tube Shipping quantity given is for minimum packing quantity only. For minimum order quantity, please consult the Sales Department. Won-Top Electronics Co., Ltd (WTE) has checked all information carefully and believes it to be correct and accurate. However, WTE cannot assume any responsibility for inaccuracies. Furthermore, this information does not give the purchaser of semiconductor devices any license under patent rights to manufacturer. WTE reserves the right to change any or all information herein without further notice. WARNING: DO NOT USE IN LIFE SUPPORT EQUIPMENT. WTE power semiconductor products are not authorized for use as critical components in life support devices or systems without the express written approval. Won-Top Electronics Co., Ltd. No. 44 Yu Kang North 3rd Road, Chine Chen Dist., Kaohsiung, Taiwan Phone: 886-7-822-5408 or 886-7-822-5410 Fax: 886-7-822-5417 Email: [email protected] Internet: http://www.wontop.com ER1000F – ER1006F We power your everyday. 3 of 3 © 2002 Won-Top Electronics