HP AT-31625-TR1 4.8 v npn common emitter medium power output transistor Datasheet

4.8 V NPN Common Emitter
Medium Power Output Transistor
Technical Data
AT-31625
Features
• 4.8 Volt Operation
• +28.0 dBm Pout @ 900 MHz,
Typ.
MSOP-3 Surface Mount
Plastic Package
Outline 25
• 70% Collector Efficiency
@␣ 900 MHz, Typ.
• 9 dB Power Gain @ 900 MHz,
Typ.
• -31 dBc IMD3 @ Pout of
21␣ dBm per Tone, 900␣ MHz,
Typ.
• 50% Smaller than SOT-223
Package
Pin Configuration
COLLECTOR
4
Applications
• Medium Power Driver
Device for Cellular/PCS,
ISM 900, WLAN
• Output Power Device for
ISM 900, Cordless, WLAN
EMITTER 1
2
3 EMITTER
BASE
4-43
Description
Hewlett Packard’s AT-31625 is a
low cost, NPN medium power
silicon bipolar junction transistor
housed in a miniature, MSOP-3
surface mount plastic package.
The AT-31625 can be used as a
driver device or an output device,
depending on the specific application. The AT-31625 features
+28␣ dBm CW output power when
operated at 4.8 volts. Excellent
gain and superior efficiency make
the AT-31625 ideal for use in
battery powered systems.
The AT-31625 is fabricated with
Hewlett Packard’s 10 GHz Ft SelfAligned-Transistor (SAT) process.
The die are nitride passivated for
surface protection. Excellent
device uniformity, performance
and reliability are produced by the
use of ion-implantation, selfalignment techniques, and gold
metalization in the fabrication of
these devices.
5965-5911E
AT-31625 Absolute Maximum Ratings
Symbol
VEBO
VCBO
VCEO
IC
PT
Tj
TSTG
Parameter
Emitter-Base Voltage
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
Power Dissipation [2]
Junction Temperature
Storage Temperature
Units
V
V
V
mA
W
°C
°C
Absolute
Maximum[1]
1.4
16.0
9.5
320
1.0
150
-65 to 150
Thermal Resistance[3]:
θjc = 65°C/W
Notes:
1. Permanent damage may occur if
any of these limits are exceeded.
2. Derate at 15.4 mW/°C for Tc > 85°C.
Tc is defined to be the temperature
of the collector pin 4, where the
lead contacts the circuit board.
3. Using the liquid crystal technique,
VCE =4.8 V, Ic =50 mA, Tj =150°C,
1-2␣ µm “hot-spot” resolution.
Electrical Specifications, TC = 25°C
Symbol
Parameters and Test Conditions
Units
Min.
Typ. Max.
Freq. = 900 MHz, VCE = 4.8 V, ICQ = 5 mA, CW operation, Test Circuit A,
unless otherwise specified
Pout
Output Power [1]
Pin = +19 dBm
dBm
+27.0
+28.0
ηC
Collector Efficiency [1]
Pin = +19 dBm
%
55
70
IMD3
3rd Order Intermodulation Distortion, 2 Tone Test,
Pout each Tone = +21 dBm [1]
F1 = 899 MHz
F2 = 901 MHz
dBc
Mismatch Tolerance, No Damage [1]
BVEBO
Emitter-Base Breakdown Voltage
BVCBO
Collector-Base Breakdown Voltage
BVCEO
Collector-Emitter Breakdown Voltage
hFE
Forward Current Transfer Ratio
ICEO
Collector Leakage Current
-31
Pout = +28 dBm
any phase, 2 sec duration
7:1
IE = 0.2 mA, open collector
V
1.4
IC = 1.0 mA, open emitter
V
16.0
IC = 5.0 mA, open base
V
9.5
VCE = 3 V, IC = 180 mA
—
80
VCEO = 5 V
µA
Note:
1. With external matching on input and output, tested in a 50 ohm environment. Refer to Test Circuit A.
4-44
150
330
15
AT-31625 Typical Performance, TC = 25°C
Frequency = 900 MHz, VCE = 4.8 V, ICQ = 5 mA, CW operation, Test Circuit A, unless otherwise specified.
32
90
30
27
80
25
70
60
23
Pout
21
50
40
19
ηc
17
30
15
20
13
2
4
6
28
26
24
22
20
18
3.0 V
3.6 V
4.8 V
16
14
10
0
8 10 12 14 16 18 20 22
11
100
Γ source = 0.73 ∠ -156
Γ load = 0.42 ∠ -179
COLLECTOR EFFICIENCY (%)
OUTPUT POWER (dBm)
100
OUTPUT POWER (dBm)
Γ source = 0.73 ∠ -156
Γ load = 0.42 ∠ -179
29
COLLECTOR EFFICIENCY (%)
31
12
6
8
10
INPUT POWER (dBm)
12
14
16
18
20
90
80
70
60
50
INPUT POWER (dBm)
Figure 1. Output Power and Collector
Efficiency vs. Input Power.
3.0 V
3.6 V
4.8 V
40
30
12
22
Γ source = 0.73 ∠ -156
Γ load = 0.42 ∠ -179
14
16
18
20
22
INPUT POWER (dBm)
Figure 2. Output Power vs. Input
Power Over Bias Voltage.
Figure 3. Collector Efficiency vs.
Input Power Over Bias Voltage.
Pin = +19 dBm
Γ source = 0.73 ∠ -156
Γ load = 0.42 ∠ -179
30.5
OUTPUT POWER (dBm)
-10
28
-15
26
24
22
20
-20
-25
-30
IMD3
-35
18
TC = +85°C
TC = +25°C
TC = –40°C
16
14
Γ source = 0.73 ∠ -156
Γ load = 0.42 ∠ -179
-5
IMD (dBc)
OUTPUT POWER (dBm)
30
31.0
0
6
8
10
12
14
16
18
-40
-45
20
22
INPUT POWER (dBm)
-50
IMD5
8
10
12
14 16
18
20
22
24
OUTPUT POWER/TONE (dBm)
Figure 4. Output Power vs. Input
Power Over Temperature.
Figure 5. IMD3, IMD5 vs. Output
Power Per Tone.
30.0
100
Γ source = 0.73 ∠ -156
Γ load = 0.42 ∠ -179
ηc
90
80
29.5
70
29.0
60
28.5
50
Pout
28.0
40
27.5
30
27.0
20
26.5
10
0
1000
26.0
800
840
880
920
960
FREQUENCY (MHz)
Figure 6. Output Power and Collector
Efficiency vs. Frequency.
Note: Tuned at 900 MHz, then Swept over
Frequency.
0
RETURN LOSS (dB)
-2
Γ source = 0.73 ∠ -156
Γ load = 0.42 ∠ -179
-4
-6
Output R.L.
-8
-10
-12
Input R.L.
-14
-16
-18
800
850
900
950
1000
FREQUENCY (MHz)
Figure 7. Input and Output Return
Loss vs. Frequency.
4-45
COLLECTOR EFFICIENCY (%)
32
AT-31625 Typical Large Signal Impedances
VCE = 4.8 V, ICQ = 5 mA, Pout␣ =␣ +28.0 dBm
Γ source
Freq.
MHz
Mag.
Ang.
800
0.661
-149.0
825
0.679
-150.6
850
0.697
-152.4
875
0.712
-154.2
900
0.727
-155.8
925
0.740
-157.5
950
0.754
-159.0
975
0.767
-160.4
1000
0.777
-162.1
5.5
5.0
Γ
load
4.5
Ang.
-171.3
-172.8
-174.6
-176.5
-179.0
179.3
177.2
174.9
172.5
Ccb (pF)
Mag.
0.382
0.394
0.403
0.412
0.422
0.426
0.432
0.437
0.438
4.0
3.5
3.0
2.5
2.0
0
2
4
6
8
10
Vcb (V)
Figure 8. Collector-Base Capacitance
vs. Collector-Base Voltage (DC Test).
SPICE Model Parameters
Die Model
Packaged Model
CPad
Cbc
C
CPad
CPad
B
Lb1
B
0.2 Ω
Lb2
Rb2
B
E1
Die Area = 1.2
CPad = 0.43 pF
Label
BF
IKF
ISE
NE
VAF
NF
TF
XTF
VTF
ITF
PTF
XTB
BR
IKR
ISC
NC
VAR
NR
Value
150
299.9
9.9E-11
2.399
33.16
0.9935
1.6E-11
0.006656
0.02785
0.001
23
0
54.61
81
8.7E-13
1.587
1.511
0.9886
Label
TR
EG
IS
XTI
CJC
VJC
MJC
XCJC
FC
CJE
VJE
MJE
RB
IRB
RBM
RE
RC
0.2 Ω
Label
Cbc
Cbe
Cce
Lb1
Lb2
Rb2
Le1
Lc1
4-46
Value
0.009 pF
1.20 pF
0.48 pF
1.53 nH
0.045 nH
0.1 Ω
0.38 nH
0.47 nH
C
Cce
E2
Value
1E-9
1.11
3.598E-15
3
1.4E-12
0.4776
0.2508
0.001
0.999
5.06E-12
1.148
0.5965
0.752
0
0.01
2.488
1.288
Lc1
E2
Cbe
E1
C
Die
Le1
E
AT-31625 Typical Scattering Parameters, Common Emitter, ZO = 50 Ω
VCE = 3.0 V, Ic = 200 mA, Tc = 25°C
Freq.
S11
GHz
Mag.
Ang.
dB
0.05
0.10
0.25
0.50
0.75
0.90
1.00
1.25
1.50
1.75
2.00
2.25
2.50
0.72
0.77
0.79
0.79
0.79
0.79
0.79
0.79
0.79
0.79
0.79
0.79
0.79
-150
-166
179
169
161
156
153
146
140
133
126
120
114
30.7
25.3
17.5
11.6
8.2
6.7
5.9
4.1
2.7
1.7
0.7
0.0
-0.6
S21
Mag.
Ang.
dB
S12
Mag.
Ang.
Mag.
S22
Ang.
34.19
18.43
7.54
3.81
2.58
2.17
1.97
1.61
1.37
1.21
1.09
1.00
0.93
113
99
86
74
65
59
56
48
40
32
26
19
13
-34.0
-34.0
-28.0
-23.1
-20.9
-19.2
-18.4
-16.5
-14.9
-13.6
-12.8
-11.7
-11.1
0.02
0.02
0.04
0.07
0.09
0.11
0.12
0.15
0.18
0.21
0.23
0.26
0.28
40
42
57
64
63
62
61
58
54
49
45
41
36
0.56
0.52
0.51
0.51
0.52
0.52
0.52
0.53
0.54
0.54
0.55
0.55
0.56
-120
-148
-169
-178
177
175
174
170
167
164
160
156
152
36.39
19.69
8.06
4.07
2.75
2.31
2.10
1.71
1.46
1.28
1.16
1.05
0.98
114
100
86
75
65
60
56
48
40
33
26
19
13
-34.0
-34.0
-28.0
-24.4
-20.9
-19.2
-18.4
-16.5
-14.9
-14.0
-12.8
-11.7
-11.1
0.02
0.02
0.04
0.06
0.09
0.11
0.12
0.15
0.18
0.20
0.23
0.26
0.28
41
43
57
64
64
62
61
58
54
50
46
41
37
0.56
0.51
0.50
0.50
0.51
0.51
0.51
0.52
0.53
0.54
0.54
0.55
0.55
-117
-146
-168
-177
178
176
174
171
168
164
161
157
153
38.47
20.90
8.57
4.33
2.92
2.45
2.23
1.81
1.54
1.35
1.22
1.11
1.03
115
100
87
75
66
60
57
48
41
33
27
20
13
-34.0
-34.0
-28.0
-24.4
-20.9
-19.2
-18.4
-16.5
-14.9
-14.0
-12.8
-12.0
-11.1
0.02
0.02
0.04
0.06
0.09
0.11
0.12
0.15
0.18
0.20
0.23
0.25
0.28
41
43
57
64
64
62
61
58
54
50
46
41
37
0.56
0.50
0.49
0.49
0.49
0.50
0.50
0.51
0.51
0.52
0.53
0.54
0.54
-114
-144
-167
-176
179
176
175
172
168
165
162
158
154
VCE = 3.6 V, Ic = 200 mA, Tc = 25°C
0.05
0.10
0.25
0.50
0.75
0.90
1.00
1.25
1.50
1.75
2.00
2.25
2.50
0.71
0.76
0.78
0.78
0.78
0.78
0.78
0.78
0.78
0.78
0.78
0.78
0.78
-148
-165
180
169
161
156
153
146
140
133
127
121
115
31.2
25.9
18.1
12.2
8.8
7.3
6.4
4.7
3.3
2.1
1.3
0.4
-0.2
VCE = 4.8 V, Ic = 200 mA, Tc = 25°C
0.05
0.10
0.25
0.50
0.75
0.90
1.00
1.25
1.50
1.75
2.00
2.25
2.50
0.70
0.75
0.77
0.77
0.77
0.77
0.77
0.77
0.77
0.77
0.77
0.77
0.77
-145
-164
-180
169
161
157
154
147
140
134
127
121
115
31.7
26.4
18.7
12.7
9.3
7.8
7.0
5.2
3.8
2.6
1.7
0.9
0.3
35
30
30
MSG
25
25
20
20
MAG
15
10
MSG
|S21|2
10
5
0
0
0.25 0.75
1.00
1.50
2.00
2.50
FREQUENCY (GHz)
Figure 9. Insertion Power Gain,
Maximum Available Gain, and Maximum
Stable Gain vs. Frequency. VCE = 3.0V,
Ic = 200 mA.
MSG
30
MAG
25
15
5
-5
0.05
35
MSG
GAIN (dB)
35
GAIN (dB)
GAIN (dB)
Typical Performance
-5
0.05
MSG
|S21|2
MAG
20
15
10
MSG
|S21|2
5
0.25 0.75
1.00
1.50
2.00
2.50
FREQUENCY (GHz)
Figure 10. Insertion Power Gain,
Maximum Available Gain, and Maximum
Stable Gain vs. Frequency. VCE = 3.6V,
Ic = 200 mA.
4-47
0
0.05
0.25 0.75
1.00
1.50
2.00
2.50
FREQUENCY (GHz)
Figure 11. Insertion Power Gain,
Maximum Available Gain, and Maximum
Stable Gain vs. Frequency. VCE = 4.8V,
Ic = 200 mA.
AT-31625 Typical Performance, TC = 25°C
Frequency = 1800 MHz, VCE = 4.8 V, ICQ = 15 mA, CW operation, Test Circuit B,
unless otherwise specified.
60
25
50
20
40
Pout
15
30
ηc
10
20
5
10
0
0
4
8
12
16
20
-5
RETURN LOSS (dB)
OUTPUT POWER (dBm)
30
0
70
Γ source = 0.75 ∠ -135
Γ load = 0.39 ∠ -179
COLLECTOR EFFICIENCY (%)
35
0
24
INPUT POWER (dBm)
Figure 12. Output Power and
Collector Efficiency vs. Input Power.
Γ source = 0.75 ∠ -135
Γ load = 0.39 ∠ -179
Output R.L.
-10
-15
Input R.L.
-20
-25
1700
1750
1800
1850
Figure 13. Input and Output Return
Loss vs. Frequency.
AT-31625 Typical Large Signal Impedances
VCE = 4.8 V, ICQ = 15 mA, Pout␣ =␣ +25.0 dBm
Γ source
Freq.
MHz
Mag.
Ang.
1700
0.717
-131.8
1725
0.724
-132.6
1750
0.732
-133.4
1775
0.743
-134.3
1800
0.752
-135.4
1825
0.763
-136.3
1850
0.773
-137.0
1875
0.780
-137.8
1900
0.788
-138.7
1900
FREQUENCY (MHz)
Γ
Mag.
0.373
0.378
0.381
0.386
0.390
0.394
0.397
0.401
0.403
4-48
load
Ang.
-174.3
-175.6
-176.7
-177.9
-179.1
179.5
178.4
177.1
175.7
Test Circuit A: Test Circuit Board Layout @ 900 MHz
VBB
VBB
VCC
R2
R1
T1
C8 C9
L2
L1
R4
R3
C2
VCC
C5
C3
R5
9/96
C6
38.1 (1.5)
C1
C7
C4
INPUT
PA3 DEMO
B–MFG0141
C10
OUTPUT
C1
C2
C3
C4
C5
C6
C7
C8
C9
C10
R1
R2
R3
R4
R5
T1
L1
L2
100.0 pF
100.0 pF
100.0 nF
6.8 pF
100.0 nF
100.0 pF
2.7 pF
1.5 µF
10.0 µF
100.0 pF
2.2 Ω
750.0 Ω
2.2 Ω
10.0 Ω
10.0 Ω
MBT 2222A
18.0 µH
18.0 µH
76.2 (3.0)
Test Circuit:
FR-4 Microstrip, glass epoxy board
Dielectric Constant = 4.5
Thickness = 0.79 (.031)
CW Test
VCE = 4.8 V
ICQ = 5.0 mA
Freq. = 900 MHz
NOTE:
Dimensions are shown in millimeters (inches).
Test Circuit A: Test Circuit Schematic Diagram @ 900 MHz
VBB
2.2 Ω
750 Ω
B DC
C E Transistor
2.2 Ω
10 Ω
18 µH
VCC
CW Test
VCE = 4.8 V
ICQ = 5.0 mA
Freq. = 900 MHz
100 nF
10 Ω
100 pF
100 pF
80 Ω
λ/4 @ 900 MHz
80 Ω
18 µH
100 nF
100 pF
100 pF
RF OUT
50 Ω
= 19.91 (.784)
6.8 pF
10 µF
λ/4 @ 900 MHz
50 Ω
RF IN
1.5 µF
= 5.38 (.212)
4-49
2.7 pF
Test Circuit B: Test Circuit Board Layout @ 1800 MHz
VBB
VBB
VCC
R2
R1
C8 C9
L2
L1
R4
R3
VCC
C5
C3
R5
9/96
T1
38.1 (1.5)
C2
C7
C1
C4
INPUT
C10
C6
PA3 DEMO
B–MFG0141
OUTPUT
C1
C2
C3
C4
C5
C6
C7
C8
C9
C10
R1
R2
R3
R4
R5
T1
L1
L2
100.0 pF
100.0 pF
100.0 nF
3.0 pF
100.0 nF
1.4 pF
100.0 pF
1.5 µF
10.0 µF
100.0 pF
2.2 Ω
350.0 Ω
2.2 Ω
10.0 Ω
10.0 Ω
MBT 2222A
18.0 µH
18.0 µH
76.2 (3.0)
Test Circuit:
FR-4 Microstrip, glass epoxy board
Dielectric Constant = 4.5
Thickness = 0.79 (.031)
CW Test
VCE = 4.8 V
ICQ = 15.0 mA
Freq. = 1800 MHz
NOTE:
Dimensions are shown in millimeters (inches).
Test Circuit B: Test Circuit Schematic Diagram @ 1800 MHz
VBB
2.2 Ω
350 Ω
B DC
C E Transistor
2.2 Ω
10 Ω
18 µH
VCC
CW Test
VCE = 4.8 V
ICQ = 15.0 mA
Freq. = 1800 MHz
100 nF
10 Ω
100 pF
100 pF
80 Ω
λ/4 @ 1800 MHz
80 Ω
18 µH
100 nF
100 pF
RF OUT
50 Ω
= 10.49 (.413)
RF IN
3.0 pF
10 µF
λ/4 @ 1800 MHz
50 Ω
100 pF
1.5 µF
= 0.89 (.035)
4-50
1.4 pF
Part Number Ordering Information
Part Number
No. of Devices
AT-31625-TR1
AT-31625-BLK
Container
1000
25
7" Reel
Carrier Tape
Package Dimensions
MSOP-3 Surface Mount Plastic Package
0.18/0.25
(.007/.010)
3.12/3.23
(.123/.127)
SEE DETAIL A
R 0.25 (.010) MAX
4.62/5.03
(.182/.198)
0.76 REF
(.030)
0.51 (.020) DIA X
0.15 (.006) DEEP
REF
PIN 1
0.76 REF
(.030)
2.64/2.82
(.104/.111)
1.91
(.075)
BASIC
4.80/5.00
(.189/.197)
1.09/1.42
(.043/.056)
1.22/1.60
(.048/.063)
TOP VIEW
SEATING
PLANE
0.58/0.69
(.023/.027)
LEAD TIP
COPLANARITY
SIDE VIEW
R 0.20 (.008) MIN
R 0.20/0.33
(.008/.013)
0.25 (.010)
GAUGE PLANE
0.10/0.25
(.004/.010)
0.41/0.86
(.016/.034)
SEATING
PLANE
0° MIN/8° MAX
DETAIL A
NOTE:
DIMENSIONS ARE SHOWN IN MILLIMETERS (INCHES)
4-51
0.10 (.004)
Tape Dimensions and Product Orientation for Package MSOP-3
REEL
CARRIER
TAPE
USER
FEED
DIRECTION
COVER TAPE
2.00 ± 0.05
(.079 ± .002)
1.75 (.069)
1.5 (.059)
0.30 ± 0.05
(.012 ± .002)
4.0 (.157)
12.0 ± 0.3
5.2 (.472 ± .012)
(.205)
5.50 ± 0.05
(.217 ± .002)
R 0.5 (.020) TYP
8.0
(.315)
1.5
(.059)
R 0.3
(.012)
1.75
(.069)
5.2
(.205)
NOTES:
1. DIMENSIONS ARE SHOWN IN MILLIMETERS (INCHES)
2. TOLERANCES: .X ± 0.1 (.XXX ± .004)
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