CED05N65/CEU05N65 N-Channel Enhancement Mode Field Effect Transistor FEATURES 650V, 4A, RDS(ON) = 2.4Ω @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead-free plating ; RoHS compliant. TO-251 & TO-252 package. G D G S CEU SERIES TO-252(D-PAK) ABSOLUTE MAXIMUM RATINGS Parameter G D S CED SERIES TO-251(I-PAK) Tc = 25 C unless otherwise noted Symbol Limit Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous @ TC = 25 C @ TC = 100 C ID Drain Current-Pulsed a IDM Maximum Power Dissipation @ TC = 25 C PD - Derate above 25 C Single Pulsed Avalanche Energy S d Single Pulsed Avalanche Current d Operating and Store Temperature Range 650 Units V ±30 V 4 A 2.5 A 16 A 56 W 0.45 W/ C EAS 43 mJ IAS 3.5 A TJ,Tstg -55 to 150 C Thermal Characteristics Symbol Limit Units Thermal Resistance, Junction-to-Case Parameter RθJC 2.2 C/W Thermal Resistance, Junction-to-Ambient RθJA 50 C/W Rev 3. 2011.Nov http://www.cetsemi.com Details are subject to change without notice . 1 CED05N65/CEU05N65 Electrical Characteristics Parameter Tc = 25 C unless otherwise noted Symbol Test Condition Min Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = 250µA 650 Zero Gate Voltage Drain Current IDSS Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse Typ Max Units VDS = 650V, VGS = 0V 25 µA IGSSF VGS = 30V, VDS = 0V 100 nA IGSSR VGS = -30V, VDS = 0V -100 nA 4 V 2.4 Ω Off Characteristics V On Characteristics b Gate Threshold Voltage Static Drain-Source On-Resistance VGS(th) VGS = VDS, ID = 250µA RDS(on) VGS = 10V, ID = 2A Dynamic Characteristics c Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS = 25V, VGS = 0V, f = 1.0 MHz 2 2 570 pF 105 pF 20 pF Switching Characteristics c Turn-On Delay Time td(on) Turn-On Rise Time tr Turn-Off Delay Time td(off) VDD = 300V, ID = 4A, VGS = 10V, RGEN = 25Ω 23 46 ns 13 35 26 70 ns ns Turn-Off Fall Time tf 11 22 ns Total Gate Charge Qg 8.3 11 nC Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS = 480V, ID = 4A, VGS = 10V 3 nC 3.1 nC Drain-Source Diode Characteristics and Maximun Ratings Drain-Source Diode Forward Current IS Drain-Source Diode Forward Voltage b VSD VGS = 0V, IS = 4A Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. c.Guaranteed by design, not subject to production testing. d.L = 7mH, IAS = 3.5A, VDD = 50V, RG = 25Ω, Starting TJ = 25 C 2 4 A 1.5 V CED05N65/CEU05N65 9 VGS=10,8,7V 5 ID, Drain Current (A) ID, Drain Current (A) 6 4 VGS=5V 3 2 1 0 0.0 5 10 15 20 25 TJ=125C 1 2 -55 C 3 4 5 6 Figure 1. Output Characteristics Figure 2. Transfer Characteristics RDS(ON), Normalized RDS(ON), On-Resistance(Ohms) Ciss 600 400 Coss 200 Crss 0 5 10 15 20 25 3.0 2.5 ID=2A VGS=10V 2.0 1.5 1.0 0.5 0.0 -100 -50 0 50 100 150 200 VDS, Drain-to-Source Voltage (V) TJ, Junction Temperature( C) Figure 3. Capacitance Figure 4. On-Resistance Variation with Temperature VDS=VGS ID=250µA 1.1 1.0 0.9 0.8 0.7 0.6 -50 25 C 1.5 VGS, Gate-to-Source Voltage (V) IS, Source-drain current (A) C, Capacitance (pF) VTH, Normalized Gate-Source Threshold Voltage 3 VDS, Drain-to-Source Voltage (V) 800 1.2 4.5 30 1000 1.3 6 0 1200 0 7.5 -25 0 25 50 75 100 125 VGS=0V 10 1 10 0 10-1 0.4 150 0.7 1.0 1.3 1.7 2.0 TJ, Junction Temperature( C) VSD, Body Diode Forward Voltage (V) Figure 5. Gate Threshold Variation with Temperature Figure 6. Body Diode Forward Voltage Variation with Source Current 3 10 VDS=480V ID=4A 10 8 ID, Drain Current (A) VGS, Gate to Source Voltage (V) CED05N65/CEU05N65 6 4 2 0 0 2 4 6 8 10 0 10 -1 10 10 1 RDS(ON)Limit 100ms 1ms 10ms DC TC=25 C TJ=175 C Single Pulse -2 10 0 10 1 10 2 10 Qg, Total Gate Charge (nC) VDS, Drain-Source Voltage (V) Figure 7. Gate Charge Figure 8. Maximum Safe Operating Area VDD t on RL V IN D VGS RGEN toff tr td(on) td(off) tf 90% 90% VOUT VOUT 10% INVERTED 10% G 90% S VIN 50% 50% 10% PULSE WIDTH Figure 10. Switching Waveforms r(t),Normalized Effective Transient Thermal Impedance Figure 9. Switching Test Circuit 10 0 D=0.5 0.2 10 -1 PDM 0.1 t1 0.05 0.02 0.01 Single Pulse 10 -2 10 -5 t2 1. RθJA (t)=r (t) * RθJA 2. RθJA=See Datasheet 3. TJM-TA = P* RθJC (t) 4. Duty Cycle, D=t1/t2 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (sec) Figure 11. Normalized Thermal Transient Impedance Curve 4 10 0 10 1 3