TO -92 ACT108-600D AC Thyristor power switch 20 August 2014 Product data sheet 1. General description AC Thyristor power switch in a SOT54 plastic package with self-protective capabilities against low and high energy transients 2. Features and benefits • • • • • • • Exclusive negative gate triggering Full cycle AC conduction High noise immunity Remote gate separates the gate driver from the effects of the load current Very sensitive gate for lowest gate trigger current Safe clamping of low energy over-voltage transients Self-protective turn-on during high energy voltage transients 3. Applications • • • Fan motor circuits Pump motor circuits Lower-power highly inductive, resistive and safety loads 4. Quick reference data Table 1. Quick reference data Symbol Parameter VDRM Conditions Min Typ Max Unit repetitive peak offstate voltage - - 600 V ITSM non-repetitive peak on- full sine wave; Tj(init) = 25 °C; state current tp = 20 ms; Fig. 2; Fig. 3 - - 8 A IT(RMS) RMS on-state current full sine wave; Tlead ≤ 71 °C; Fig. 1 - - 0.8 A VPP peak pulse voltage Tj = 25 °C; non-repetitive, off-state; - - 2 kV 0.5 - 5 mA 0.5 - 5 mA 650 - - V Fig. 4 Static characteristics IGT gate trigger current VD = 12 V; IT = 100 mA; LD+ G-; Tj = 25 °C; Fig. 6 VD = 12 V; IT = 100 mA; LD- G-; Tj = 25 °C; Fig. 6 VCL clamping voltage ICL = 0.1 mA; tp = 1 ms; Tj ≤ 125 °C Scan or click this QR code to view the latest information for this product ACT108-600D NXP Semiconductors AC Thyristor power switch 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 CM common 2 G gate 3 LD load Simplified outline Graphic symbol LD G CM 321 001aaj924 TO-92 (SOT54) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version ACT108-600D TO-92 plastic single-ended leaded (through hole) package; 3 leads SOT54 ACT108-600D/DG TO-92 plastic single-ended leaded (through hole) package; 3 leads SOT54 ACT108-600D Product data sheet All information provided in this document is subject to legal disclaimers. 20 August 2014 © NXP Semiconductors N.V. 2014. All rights reserved 2 / 12 ACT108-600D NXP Semiconductors AC Thyristor power switch 7. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions VDRM repetitive peak off-state voltage IT(RMS) RMS on-state current ITSM non-repetitive peak on-state current Min Max Unit - 600 V full sine wave; Tlead ≤ 71 °C; Fig. 1 - 0.8 A full sine wave; Tj(init) = 25 °C; - 8.8 A - 8 A tp = 16.7 ms full sine wave; Tj(init) = 25 °C; tp = 20 ms; Fig. 2; Fig. 3 I t I2t for fusing tp = 10 ms; SIN - 0.32 A s dIT/dt rate of rise of on-state current IT = 1 A; IG = 10 mA; dIG/dt = 0.2 A/µs - 50 A/µs IGM peak gate current t = 20 μs - 1 A VGM peak gate voltage - 15 V PG(AV) average gate power - 0.1 W Tstg storage temperature -40 150 °C Tj junction temperature - 125 °C VPP peak pulse voltage - 2 kV 2 over any 20 ms period Tj = 25 °C; non-repetitive, off-state; 2 Fig. 4 003aac803 1.0 Ptot (W) α = 180° α 0.8 α 0.6 0.4 0.2 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 IT(RMS) (A) 0.8 α = conduction angle Fig. 1. Total power dissipation as a function of RMS on-state current; maximum values ACT108-600D Product data sheet All information provided in this document is subject to legal disclaimers. 20 August 2014 © NXP Semiconductors N.V. 2014. All rights reserved 3 / 12 ACT108-600D NXP Semiconductors AC Thyristor power switch 003aac804 10 ITSM (A) 8 6 4 ITSM IT t 2 1/f Tj(init) = 25 °C max 0 1 102 10 103 number of cycles f = 50 Hz Fig. 2. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum values 003aac805 103 ITSM IT ITSM (A) t tp 102 Tj(init) = 25 °C max 10 1 10- 5 10- 4 10- 3 tp (s) 10- 2 tp ≤ 20 ms Fig. 3. Non-repetitive peak on-state current as a function of pulse width; maximum values IEC 61000-4-5 Standards Surge Generator Open Circuit Voltage 1.2 µs/50 µs waveform RGen 2Ω Surge pulse R L 150 Ω 5 µH Load Model RG DUT 220 Ω 003aad077 Fig. 4. Test circuit for inductive and resistive loads with conditions equivalent to IEC 61000-4-5 ACT108-600D Product data sheet All information provided in this document is subject to legal disclaimers. 20 August 2014 © NXP Semiconductors N.V. 2014. All rights reserved 4 / 12 ACT108-600D NXP Semiconductors AC Thyristor power switch 8. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-lead) thermal resistance from junction to lead full cycle with heatsink compound; Fig. 5 - - 60 K/W Rth(j-a) thermal resistance from junction to ambient full cycle; printed-circuit board mounted; lead length 4 mm - 150 - K/W 003aad294 102 Zth(j-lead) (K/W) 10 1 P 10- 1 tp 10- 2 10- 5 Fig. 5. 10- 4 10- 3 10- 2 10- 1 1 tp (s) t 10 Transient thermal impedance from junction to lead as a function of pulse width ACT108-600D Product data sheet All information provided in this document is subject to legal disclaimers. 20 August 2014 © NXP Semiconductors N.V. 2014. All rights reserved 5 / 12 ACT108-600D NXP Semiconductors AC Thyristor power switch 9. Characteristics Table 6. Characteristics Symbol Parameter Conditions Min Typ Max Unit VD = 12 V; IT = 100 mA; LD+ G-; 0.5 - 5 mA 0.5 - 5 mA - - 25 mA - - 25 mA Static characteristics IGT gate trigger current Tj = 25 °C; Fig. 6 VD = 12 V; IT = 100 mA; LD- G-; Tj = 25 °C; Fig. 6 IL latching current VD = 12 V; IG = 100 mA; LD+ G-; Tj = 25 °C; Fig. 7 VD = 12 V; IG = 100 mA; LD- G-; Tj = 25 °C; Fig. 7 IH holding current VD = 12 V; Tj = 25 °C; Fig. 8 - - 20 mA VT on-state voltage IT = 1.1 A; Tj = 25 °C; Fig. 9 - - 1.3 V VGT gate trigger voltage VD = 400 V; IT = 100 mA; Tj = 125 °C 0.15 - - V VD = 12 V; IT = 100 mA; Tj = 25 °C - - 0.9 V VD = 600 V; Tj = 25 °C - - 2 µA VD = 600 V; Tj = 125 °C - - 0.2 mA ICL = 0.1 mA; tp = 1 ms; Tj ≤ 125 °C 650 - - V VDM = 402 V; Tj = 125 °C; (VDM = 67% 300 - - V/µs 0.15 - - A/ms ID VCL off-state current clamping voltage Dynamic charateristics dVD/dt rate of rise of off-state voltage of VDRM); exponential waveform; gate open circuit; Fig. 10 dIcom/dt rate of change of commutating current VD = 400 V; Tj = 125 °C; IT(RMS) 1 A; dVcom/dt = 15 V/µs; gate open circuit; Fig. 11; Fig. 12 ACT108-600D Product data sheet All information provided in this document is subject to legal disclaimers. 20 August 2014 © NXP Semiconductors N.V. 2014. All rights reserved 6 / 12 ACT108-600D NXP Semiconductors AC Thyristor power switch 003aac809 3 IGT IGT(25°C) 2 003aac811 3 IL IL(25°C) (1) 2 (2) 1 1 (2) (1) 0 - 50 50 0 100 Tj (°C) (1) LD+ G(2) LD- GFig. 6. 0 - 50 150 Fig. 7. 003aac810 50 100 Tj (°C) 150 Normalized latching current as a function of junction temperature Normalized gate trigger current as a function of junction temperature 3 0 003aaf722 2.0 IT (A) IH IH(25°C) 1.5 2 1.0 (1) 1 (2) (3) 0.5 0 - 50 Fig. 8. 0 50 100 Tj (°C) 0.0 0.0 150 0.5 1.0 1.5 VT (V) 2.0 Vo = 0.758 V; Rs = 0.263 Ω Normalized holding current as a function of junction temperature (1) Tj = 125 °C; typical values (2) Tj = 125 °C; maximum values (3) Tj = 25 °C; maximum values Fig. 9. ACT108-600D Product data sheet On-state current as a function of on-state voltage All information provided in this document is subject to legal disclaimers. 20 August 2014 © NXP Semiconductors N.V. 2014. All rights reserved 7 / 12 ACT108-600D NXP Semiconductors AC Thyristor power switch A B 003aac813 12 003aac814 12 A B 10 8 8 6 4 4 2 0 25 50 75 100 Tj (°C) 0 125 25 50 75 100 Tj (°C) A = dVD/dt at condition Tj °C A = dIcom/dt at condition Tj °C B = dVD/dt at condition Tj [125] °C B = dIcom/dt at condition Tj [125] °C Fig. 10. Normalized rate of rise of off-state voltage as a function of junction temperature 125 VD = 400 V Fig. 11. Normalized critical rate of rise of commutating current as a function of junction temperature 003aac815 2.0 A [B] A [spec] 1.5 1.0 0.5 0 10- 1 1 10 B (V/µs) 102 A [B] = dIcom/dt at condition B, dVcom/dt A [spec] is the data sheet value for dIcom/dt turn-off time is less than 20 ms Fig. 12. Normalized critical rate of change of commutating current as a function of critical rate of change of commutating voltage; minimum values ACT108-600D Product data sheet All information provided in this document is subject to legal disclaimers. 20 August 2014 © NXP Semiconductors N.V. 2014. All rights reserved 8 / 12 ACT108-600D NXP Semiconductors AC Thyristor power switch 10. Package outline Plastic single-ended leaded (through hole) package; 3 leads SOT54 c E d A L b 1 e1 2 D e 3 b1 L1 0 2.5 5 mm scale DIMENSIONS (mm are the original dimensions) UNIT A b b1 c D d E e e1 L L1(1) mm 5.2 5.0 0.48 0.40 0.66 0.55 0.45 0.38 4.8 4.4 1.7 1.4 4.2 3.6 2.54 1.27 14.5 12.7 2.5 max. Note 1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities. OUTLINE VERSION SOT54 REFERENCES IEC JEDEC JEITA TO-92 SC-43A EUROPEAN PROJECTION ISSUE DATE 04-06-28 04-11-16 Fig. 13. Package outline TO-92 (SOT54) ACT108-600D Product data sheet All information provided in this document is subject to legal disclaimers. 20 August 2014 © NXP Semiconductors N.V. 2014. All rights reserved 9 / 12 ACT108-600D NXP Semiconductors AC Thyristor power switch In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. 11. 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ACT108-600D Product data sheet Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors and its suppliers accept no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Applications — Applications that are described herein for any of these products are for illustrative purposes only. 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NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). NXP does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the All information provided in this document is subject to legal disclaimers. 20 August 2014 © NXP Semiconductors N.V. 2014. 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The English version shall prevail in case of any discrepancy between the translated and English versions. 11.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV, FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, ICODE, ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse, QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET, TrenchMOS, TriMedia and UCODE — are trademarks of NXP Semiconductors N.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. ACT108-600D Product data sheet All information provided in this document is subject to legal disclaimers. 20 August 2014 © NXP Semiconductors N.V. 2014. All rights reserved 11 / 12 ACT108-600D NXP Semiconductors AC Thyristor power switch 12. Contents 1 General description ............................................... 1 2 Features and benefits ............................................1 3 Applications ........................................................... 1 4 Quick reference data ............................................. 1 5 Pinning information ............................................... 2 6 Ordering information ............................................. 2 7 Limiting values .......................................................3 8 Thermal characteristics .........................................5 9 Characteristics ....................................................... 6 10 Package outline ..................................................... 9 11 11.1 11.2 11.3 11.4 Legal information .................................................10 Data sheet status ............................................... 10 Definitions ...........................................................10 Disclaimers .........................................................10 Trademarks ........................................................ 11 © NXP Semiconductors N.V. 2014. All rights reserved For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 20 August 2014 ACT108-600D Product data sheet All information provided in this document is subject to legal disclaimers. 20 August 2014 © NXP Semiconductors N.V. 2014. All rights reserved 12 / 12