Diodes SMD Type Schottky barrier (double) diodes BAT754 series SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 1 Guard ring protected 0.55 Ultra high switching speed 2 +0.1 0.95-0.1 +0.1 1.9-0.1 Small plastic SMD package +0.05 0.1-0.01 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 Low diode capacitance. 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Conditions Min Max Unit Continuous reverse voltage VR 30 V Continuous forward current IF 200 mA 300 mA 600 mA Repetitive peak forward current IFRM tp < 1 s;ä < 0.5 Non-repetitive peak forward current IFSM tp = 8.3 ms half sinewave;JEDEC method Storage temperature Tstg Junction temperature -65 +150 -65 +125 Tj Operating ambient temperature 125 Tamb E le c tric a l C h a ra c te ris tic s T a = 2 5 P a ra m e te r S ym b o l F o rw a rd vo lta g e C o n d itio n s VF M ax U n it I F = 0 .1 m A 200 mV IF = 1 m A 260 mV IF = 1 0 m A 340 mV IF = 3 0 m A 420 IF = 1 0 0 m A M in mV mV 600 R e ve rs e c u rre n t IR V R = 2 5 V ; N o te 1 2 D io d e c a p a c ita n c e Cd f = 1 M H z; V R = 1 V 10 A pF N o te 1 . P u ls e te s t: t p < 3 0 0 s; ä 0 .0 2 . Marking Type BAT754 BAT754A BAT754C BAT754S Marking 2K 2L 2M 2N www.kexin.com.cn 1