BC846 ... BC850 BC846 ... BC850 Surface Mount General Purpose Si-Epi-Planar Transistors Si-Epi-Planar Universaltransistoren für die Oberflächenmontage NPN NPN Version 2006-06-02 Power dissipation – Verlustleistung 1.1 2.9 ±0.1 0.4 Plastic case Kunststoffgehäuse 1 1.3±0.1 2.5 max 3 Type Code 250 mW 2 1.9 Dimensions - Maße [mm] 1=B 2=E 3=C SOT-23 (TO-236) Weight approx. – Gewicht ca. 0.01 g Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle Maximum ratings (TA = 25°C) Grenzwerte (TA = 25°C) BC846 BC847 BC850 BC848 BC849 Collector-Emitter-volt. – Kollektor-Emitter-Spannung B open VCEO 65 V 45 V 30 V Collector-Base-voltage – Kollektor-Basis-Spannung E open VCBO 80 V 50 V 30 V Emitter-Base-voltage – Emitter-Basis-Spannung C open VEB0 6V 5V Power dissipation – Verlustleistung Ptot 250 mW ) Collector current – Kollektorstrom (dc) IC 100 mA Peak Collector current – Kollektor-Spitzenstrom ICM 200 mA Junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur Tj TS -55...+150°C -55…+150°C 1 Characteristics (Tj = 25°C) Kennwerte (Tj = 25°C) Min. Typ. Max. DC current gain – Kollektor-Basis-Stromverhältnis VCE = 5 V, IC = 10 µA Group A Group B Group C hFE hFE hFE – – – 90 150 270 – – – VCE = 5 V, IC = 2 mA Group A Group B Group C hFE hFE hFE 110 200 420 180 290 520 220 450 800 VCEsat VCEsat – – 90 mV 200 mV 250 mV 600 mV VBEsat VBEsat – – 700 mV 900 mV – – Collector-Emitter saturation voltage – Kollektor-Sättigungsspannung 2) IC = 10 mA, IB = 0.5 mA IC = 100 mA, IB = 5 mA Base-Emitter saturation voltage – Basis-Sättigungsspannung 2) IC = 10 mA, IB = 0.5 mA IC = 100 mA, IB = 5 mA 1 2 Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2% © Diotec Semiconductor AG http://www.diotec.com/ 1 BC846 ... BC850 Characteristics (Tj = 25°C) Kennwerte (Tj = 25°C) Min. Typ. Max. VBE VBE 580 mV – 660 mV – 700 mV 720 mV ICB0 ICB0 – – – – 15 nA 5 µA IEB0 – – 100 nA fT – 300 MHz – CCBO – 3.5 pF 6 pF CEB0 – 9 pF – F F – – 2 dB 1.2 dB 10 dB 4 dB Base-Emitter-voltage – Basis-Emitter-Spannung 2) VCE = 5 V, IC = 2 mA VCE = 5 V, IC = 10 mA Collector-Base cutoff current – Kollektor-Basis-Reststrom VCB = 30 V, (E open) VCE = 30 V, Tj = 125°C, (E open) Emitter-Base cutoff current VEB = 5 V, (C open) Gain-Bandwidth Product – Transitfrequenz VCE = 5 V, IC = 10 mA, f = 100 MHz Collector-Base Capacitance – Kollektor-Basis-Kapazität VCB = 10 V, IE =ie = 0, f = 1 MHz Emitter-Base Capacitance – Emitter-Basis-Kapazität VEB = 0.5 V, IC = ic = 0, f = 1 MHz Noise figure – Rauschzahl VCE = 5 V, IC = 200 µA, RG = 2 kΩ f = 1 kHz, Δf = 200 Hz BC846 ... BC848 BC849 ... BC850 Thermal resistance junction to ambient air Wärmewiderstand Sperrschicht – umgebende Luft RthA Recommended complementary PNP transistors Empfohlene komplementäre PNP-Transistoren Marking of available current gain groups per type Stempelung der lieferbare Stromverstärkungsgruppen pro Typ 2 1 2 < 420 K/W 1) BC856 ... BC859 BC846A = 1A BC847A = 1E BC848A = 1J BC846B = 1B BC847B = 1F BC848B = 1K BC849B = 2B BC850B = 2F BC847C = 1G BC848C = 1L BC849C = 2C BC850C = 2G Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2% Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss http://www.diotec.com/ © Diotec Semiconductor AG