CHENYI BZX55C2V4 0.5w silicon planar zener diode Datasheet

CE
BZX55-C0V8 THRU BZX55-C200
CHENYI ELECTRONICS
0.5W SILICON PLANAR ZENER DIODES
FEATURES
. The zener voltage are graded according to the international E24
standard .Other voltage tolerance and higher zener voltage
on request.
MECHANICAL DATA
. Case: DO-35 glass case
. Polarity: Color band denotes cathode end
. Weight: Approx. 0.13gram
ABSOLUTE MAXIMUM RATINGS(LIMITING VALUES)(TA=25
)
Symbols
Value
Units
Ptot
5001)
mW
TJ
175
TSTG
-65 to + 175
Zener current see table "Characteristics"
Power dissipation at TA=50
Junction temperature
Storage temperature range
1)Valid provided that at a distance of 8mm from case are kept at ambient temperature
ELECTRICAL CHARACTERISTICS(TA=25
)
Symbols
Thermal resistance junction to ambient
Forward voltage
at IF=100mA
R
Min.
Typ.
JA
VF
Max.
Units
3001)
K/W
1
V
1)Valid provided that leads at a distance of 8mm from case are kept at ambient temperature
Copyright @ 2000 SHANGHAI CHENYI ELECTRONICS CO.,LTD
Page 1 of 4
CE
BZX55-C0V8 THRU BZX55-C200
CHENYI ELECTRONICS
0.5W SILICON PLANAR ZENER DIODES
BXZ55... SILICON PLANAR ZENER DIODES
Zener Voltage Range1)
Dynamic resistance
Reverse leakage current
rzjt and rzjk at Izk
IR and IR 2) at VR
Temp coefficient
of zener voltage
Type
VZNOM
V
IZT for VZT 2)
mA
V
A
-
1.9…2.1
<100
<200
2.4
2.28…2.56
<50
<100
BZX 55/C 2V7
2.7
2.5…2.9
<10
<50
BZX 55/C 3V0
3
2.8…3.2
BZX 55/C 3V3
3.3
3.1…3.5
BZX 55/C 3V6
3.6
3.4…3.8
BZX 55/C 3V9
3.9
3.7…4.1
BZX 55/C 4V3
4.3
4.0…4.6
0.8
BZX 55/C 2V0
2.0
BZX 55/C 2V4
<8
A
-
BZX 55/C 0V8 3)
0.73…0.83
mA
<50
<85
TKVZ
V
%/K
-
-0.26...-0.23
-0.09…-0.06
<4
<600
<40
-0.08…-0.05
<1
<2
<75
<1
<20
-0.06…-0.03
4.7
4.4…5.0
<60
<0.5
<10
-0.05…+0.02
BZX 55/C 5V1
5.1
4.8…5.4
<35
<550
-0.02…+0.02
BZX 55/C 5V6
5.6
5.2…6.0
<25
<450
-0.05…+0.05
BZX 55/C 6V2
6.2
5.8…6.6
<10
<200
BZX 55/C 6V8
6.8
6.4…7.2
<8
<150
7.5
7.0…7.9
8.2
7.7…8.7
BZX 55/C 9V1
9.1
8.5…9.6
<10
BZX 55/C 10
10
9.4…10.6
<15
<70
BZX 55/C 11
11
10.4…11.6
<20
<70
8.2
BZX 55/C 12
12
11.4…12.7
<20
<90
9.1
BZX 55/C 13
13
12.4…14.1
<26
<110
10.0
BZX 55/C 15
15
13.8…15.6
<30
<110
11.0
BZX 55/C 16
16
15.3…17.1
<40
<170
12
BZX 55/C 18
18
16.8…19.1
<50
<170
13
BZX 55/C 20
20
18.8…21.2
<55
<220
15
BZX 55/C 4V7
BZX 55/C 7V5
BZX 55/C 8V2
5
1
<7
<7
<50
<0.1
Copyright @ 2000 SHANGHAI CHENYI ELECTRONICS CO.,LTD
<2
2.0
0.03…0.06
3.0
0.03…0.07
5.0
0.03…0.07
6.2
0.03…0.08
6.8
0.03…0.09
7.5
0.03…0.1
0.03…0.11
Page 2 of 4
CE
BZX55-C0V8 THRU BZX55-C200
CHENYI ELECTRONICS
0.5W SILICON PLANAR ZENER DIODES
BXZ55... SILICON PLANAR ZENER DIODES
BZX 55/C 22
22
20.8…23.3
<55
16
BZX 55/C 24
24
22.8…25.6
<80
18
BZX 55/C 27
27
BZX 55/C 30
30
BZX 55/C 33
33
31…35
24
BZX 55/C 36
36
34…38
27
BZX 55/C 39
39
37…41
<500
BZX 55/C 43
43
40…46
<500
BZX 55/C 47
47
44…50
<600
BZX 55/C 51
51
48….54
<700
BZX 55/C 56
56
52…60
<700
BZX 55/C 62
62
25.1…28.9
5
2.5
28…32
20
<220
1
<2
22
<80
30
<5
33
36
39
0.5
43
58…66
47
<0.1
<1000
BZX 55/C 68
68
64…72
BZX 55/C 75
75
70…79
BZX 55/C 82
82
77…87
<1500
BZX 55/C 91
91
85…96
<2000
BZX 55/C 100
100
94…106
<5000
BZX 55/C 110
110
104…116
<5000
82
BZX 55/C 120
120
114…127
<5500
91
BZX 55/C 130
130
124…141
<6000
BZX 55/C 150
150
138…156
<6500
110
BZX 55/C 160
160
153…171
<7000
120
BZX 55/C 180
180
168…191
<8500
130
BZX 55/C 200
200
188…212
<10000
150
1
0.04…0.12
51
56
0.25
62
68
<10
0.1
75
0.05…0.12
100
1)Tested with pulses tp=20ms
2)Valid provided that leads are kept at ambient temperature at a distance of 8mm from case
3)The BZX55-C0V8 is silicon diode with operation in forward direction. Hence, the index of all parameters should be 'F' instead of 'Z'. Connect the cathode
lead to the negative pole.
Copyright @ 2000 SHANGHAI CHENYI ELECTRONICS CO.,LTD
Page 3 of 4
CE
BZX55-C0V8 THRU BZX55-C200
CHENYI ELECTRONICS
0.5W SILICON PLANAR ZENER DIODES
BXZ55... SILICON PLANAR ZENER DIODES
BREAKDOWN CHARACTERISTICS AT TJ=CONSTANT(PULSED)
BREAKDOWN CHARACTERISTICS AT TJ=CONSTANT(PULSED)
Copyright @ 2000 SHANGHAI CHENYI ELECTRONICS CO.,LTD
Page 4 of 4
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