CE BZX55-C0V8 THRU BZX55-C200 CHENYI ELECTRONICS 0.5W SILICON PLANAR ZENER DIODES FEATURES . The zener voltage are graded according to the international E24 standard .Other voltage tolerance and higher zener voltage on request. MECHANICAL DATA . Case: DO-35 glass case . Polarity: Color band denotes cathode end . Weight: Approx. 0.13gram ABSOLUTE MAXIMUM RATINGS(LIMITING VALUES)(TA=25 ) Symbols Value Units Ptot 5001) mW TJ 175 TSTG -65 to + 175 Zener current see table "Characteristics" Power dissipation at TA=50 Junction temperature Storage temperature range 1)Valid provided that at a distance of 8mm from case are kept at ambient temperature ELECTRICAL CHARACTERISTICS(TA=25 ) Symbols Thermal resistance junction to ambient Forward voltage at IF=100mA R Min. Typ. JA VF Max. Units 3001) K/W 1 V 1)Valid provided that leads at a distance of 8mm from case are kept at ambient temperature Copyright @ 2000 SHANGHAI CHENYI ELECTRONICS CO.,LTD Page 1 of 4 CE BZX55-C0V8 THRU BZX55-C200 CHENYI ELECTRONICS 0.5W SILICON PLANAR ZENER DIODES BXZ55... SILICON PLANAR ZENER DIODES Zener Voltage Range1) Dynamic resistance Reverse leakage current rzjt and rzjk at Izk IR and IR 2) at VR Temp coefficient of zener voltage Type VZNOM V IZT for VZT 2) mA V A - 1.9…2.1 <100 <200 2.4 2.28…2.56 <50 <100 BZX 55/C 2V7 2.7 2.5…2.9 <10 <50 BZX 55/C 3V0 3 2.8…3.2 BZX 55/C 3V3 3.3 3.1…3.5 BZX 55/C 3V6 3.6 3.4…3.8 BZX 55/C 3V9 3.9 3.7…4.1 BZX 55/C 4V3 4.3 4.0…4.6 0.8 BZX 55/C 2V0 2.0 BZX 55/C 2V4 <8 A - BZX 55/C 0V8 3) 0.73…0.83 mA <50 <85 TKVZ V %/K - -0.26...-0.23 -0.09…-0.06 <4 <600 <40 -0.08…-0.05 <1 <2 <75 <1 <20 -0.06…-0.03 4.7 4.4…5.0 <60 <0.5 <10 -0.05…+0.02 BZX 55/C 5V1 5.1 4.8…5.4 <35 <550 -0.02…+0.02 BZX 55/C 5V6 5.6 5.2…6.0 <25 <450 -0.05…+0.05 BZX 55/C 6V2 6.2 5.8…6.6 <10 <200 BZX 55/C 6V8 6.8 6.4…7.2 <8 <150 7.5 7.0…7.9 8.2 7.7…8.7 BZX 55/C 9V1 9.1 8.5…9.6 <10 BZX 55/C 10 10 9.4…10.6 <15 <70 BZX 55/C 11 11 10.4…11.6 <20 <70 8.2 BZX 55/C 12 12 11.4…12.7 <20 <90 9.1 BZX 55/C 13 13 12.4…14.1 <26 <110 10.0 BZX 55/C 15 15 13.8…15.6 <30 <110 11.0 BZX 55/C 16 16 15.3…17.1 <40 <170 12 BZX 55/C 18 18 16.8…19.1 <50 <170 13 BZX 55/C 20 20 18.8…21.2 <55 <220 15 BZX 55/C 4V7 BZX 55/C 7V5 BZX 55/C 8V2 5 1 <7 <7 <50 <0.1 Copyright @ 2000 SHANGHAI CHENYI ELECTRONICS CO.,LTD <2 2.0 0.03…0.06 3.0 0.03…0.07 5.0 0.03…0.07 6.2 0.03…0.08 6.8 0.03…0.09 7.5 0.03…0.1 0.03…0.11 Page 2 of 4 CE BZX55-C0V8 THRU BZX55-C200 CHENYI ELECTRONICS 0.5W SILICON PLANAR ZENER DIODES BXZ55... SILICON PLANAR ZENER DIODES BZX 55/C 22 22 20.8…23.3 <55 16 BZX 55/C 24 24 22.8…25.6 <80 18 BZX 55/C 27 27 BZX 55/C 30 30 BZX 55/C 33 33 31…35 24 BZX 55/C 36 36 34…38 27 BZX 55/C 39 39 37…41 <500 BZX 55/C 43 43 40…46 <500 BZX 55/C 47 47 44…50 <600 BZX 55/C 51 51 48….54 <700 BZX 55/C 56 56 52…60 <700 BZX 55/C 62 62 25.1…28.9 5 2.5 28…32 20 <220 1 <2 22 <80 30 <5 33 36 39 0.5 43 58…66 47 <0.1 <1000 BZX 55/C 68 68 64…72 BZX 55/C 75 75 70…79 BZX 55/C 82 82 77…87 <1500 BZX 55/C 91 91 85…96 <2000 BZX 55/C 100 100 94…106 <5000 BZX 55/C 110 110 104…116 <5000 82 BZX 55/C 120 120 114…127 <5500 91 BZX 55/C 130 130 124…141 <6000 BZX 55/C 150 150 138…156 <6500 110 BZX 55/C 160 160 153…171 <7000 120 BZX 55/C 180 180 168…191 <8500 130 BZX 55/C 200 200 188…212 <10000 150 1 0.04…0.12 51 56 0.25 62 68 <10 0.1 75 0.05…0.12 100 1)Tested with pulses tp=20ms 2)Valid provided that leads are kept at ambient temperature at a distance of 8mm from case 3)The BZX55-C0V8 is silicon diode with operation in forward direction. Hence, the index of all parameters should be 'F' instead of 'Z'. Connect the cathode lead to the negative pole. Copyright @ 2000 SHANGHAI CHENYI ELECTRONICS CO.,LTD Page 3 of 4 CE BZX55-C0V8 THRU BZX55-C200 CHENYI ELECTRONICS 0.5W SILICON PLANAR ZENER DIODES BXZ55... SILICON PLANAR ZENER DIODES BREAKDOWN CHARACTERISTICS AT TJ=CONSTANT(PULSED) BREAKDOWN CHARACTERISTICS AT TJ=CONSTANT(PULSED) Copyright @ 2000 SHANGHAI CHENYI ELECTRONICS CO.,LTD Page 4 of 4