BS 170 SIPMOS ® Small-Signal Transistor • N channel • Enhancement mode • Logic Level • VGS(th) = 0.8...2.0V Pin 1 Pin 2 S Pin 3 G Type VDS ID RDS(on) Package Marking BS 170 60 V 0.3 A 5Ω TO-92 BS 170 Type BS 170 Ordering Code Q67000-S076 D Tape and Reel Information E6288 Maximum Ratings Parameter Symbol Drain source voltage VDS V Drain-gate voltage Values 60 V DGR RGS = 20 kΩ 60 Gate source voltage VGS ± 14 Gate-source peak voltage,aperiodic Vgs ± 20 Continuous drain current ID TA = 25 °C A 0.3 IDpuls DC drain current, pulsed TA = 25 °C 1.2 Ptot Power dissipation TA = 25 °C Semiconductor Group Unit W 0.63 1 12/05/1997 BS 170 Maximum Ratings Parameter Symbol Values Unit Chip or operating temperature Tj -55 ... + 150 °C Storage temperature Tstg -55 ... + 150 Thermal resistance, chip to ambient air 1) RthJA ≤ 200 DIN humidity category, DIN 40 040 K/W E IEC climatic category, DIN IEC 68-1 55 / 150 / 56 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Static Characteristics Drain- source breakdown voltage V(BR)DSS VGS = 0 V, ID = 0.25 mA, Tj = 25 °C Gate threshold voltage 60 - - 0.8 1.4 2 VGS(th) VGS=VDS, ID = 1 mA Zero gate voltage drain current V IDSS µA VDS = 60 V, VGS = 0 V, Tj = 25 °C - 0.05 0.5 VDS = 60 V, VGS = 0 V, Tj = 125 °C - - 5 Gate-source leakage current IGSS VGS = 20 V, VDS = 0 V Drain-Source on-state resistance - 1 10 Ω RDS(on) VGS = 10 V, ID = 0.2 A Semiconductor Group nA - 2 2.5 5 12/05/1997 BS 170 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Dynamic Characteristics Transconductance gfs VDS≥ 2 * ID * RDS(on)max, ID = 0.2 A Input capacitance 0.12 pF - 40 60 - 15 25 - 5 10 Crss VGS = 0 V, VDS = 25 V, f = 1 MHz Turn-on delay time - Coss VGS = 0 V, VDS = 25 V, f = 1 MHz Reverse transfer capacitance 0.18 Ciss VGS = 0 V, VDS = 25 V, f = 1 MHz Output capacitance S td(on) ns VDD = 30 V, VGS = 10 V, ID = 0.29 A RG = 50 Ω Rise time - 5 8 - 8 12 - 12 16 - 17 22 tr VDD = 30 V, VGS = 10 V, ID = 0.29 A RG = 50 Ω Turn-off delay time td(off) VDD = 30 V, VGS = 10 V, ID = 0.29 A RG = 50 Ω Fall time tf VDD = 30 V, VGS = 10 V, ID = 0.29 A RG = 50 Ω Semiconductor Group 3 12/05/1997 BS 170 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Symbol Values Parameter min. typ. Unit max. Reverse Diode Inverse diode continuous forward current IS TA = 25 °C Inverse diode direct current,pulsed - 0.3 - - 1.2 VSD VGS = 0 V, IF = 0.5 A Semiconductor Group - ISM TA = 25 °C Inverse diode forward voltage A V - 4 0.9 1.2 12/05/1997 BS 170 Power dissipation Ptot = ƒ(TA) Drain current ID = ƒ(TA) parameter: VGS ≥ 10 V 0.32 0.70 W A 0.60 Ptot ID 0.55 0.24 0.50 0.45 0.20 0.40 0.16 0.35 0.30 0.12 0.25 0.20 0.08 0.15 0.10 0.05 0.00 0 0.04 20 40 60 80 100 120 °C 160 0.00 0 20 40 60 80 100 120 TA °C 160 TA Safe operating area ID=f(VDS) Drain-source breakdown voltage V(BR)DSS = ƒ(Tj) parameter : D = 0.01, TC=25°C 71 V V(BR)DSS 68 66 64 62 60 58 56 54 -60 -20 20 60 100 °C 160 Tj Semiconductor Group 5 12/05/1997 BS 170 Typ. output characteristics ID = ƒ(VDS) parameter: tp = 80 µs , Tj = 25 °C 0.70 Typ. drain-source on-resistance RDS (on) = ƒ(ID) parameter: tp = 80 µs, Tj = 25 °C 16 Ptot = 1W A lkj i 0.60 ID a Ω h 0.55 VGS [V] a 2.0 g 0.50 0.45 f 0.40 0.35 e 0.30 b 2.5 c 3.0 d 3.5 e 4.0 f 4.5 g 5.0 h 6.0 i 7.0 0.25 j 8.0 0.20 d k 9.0 l 10.0 RDS (on) b c d e 12 10 8 6 4 f hj ig 0.15 c 0.10 2 VGS [V] = 0.05 b a 0.00 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 a 2.0 2.5 3.0 V 0 0.00 5.0 b 3.5 0.10 c 4.0 d 4.5 0.20 e f 5.0 6.0 0.30 g 7.0 h i j 8.0 9.0 10.0 0.40 A VDS Typ. transfer characteristics ID = f(VGS) parameter: tp = 80 µs VDS≥ 2 x ID x RDS(on)max Typ. forward transconductance gfs = f (ID) parameter: tp = 80 µs, VDS≥2 x ID x RDS(on)max 0.75 ID 0.60 ID 0.30 A S 0.65 0.26 gfs 0.60 0.24 0.55 0.22 0.50 0.20 0.45 0.18 0.40 0.16 0.35 0.14 0.30 0.12 0.25 0.10 0.20 0.08 0.15 0.06 0.10 0.04 0.05 0.00 0 0.02 0.00 0.00 1 2 3 Semiconductor Group 4 5 6 7 8 V VGS 10 6 0.10 0.20 0.30 0.40 0.50 A ID 0.65 12/05/1997 BS 170 Drain-source on-resistance RDS (on) = ƒ(Tj) parameter: ID = 0.2 A, VGS = 10 V Gate threshold voltage VGS (th) = ƒ(Tj) parameter: VGS = VDS, ID = 1 mA 13 RDS (on) 4.6 Ω V 11 4.0 VGS(th) 10 3.6 9 3.2 8 2.8 7 2.4 98% 98% 6 2.0 5 typ 1.6 4 typ 3 1.2 2% 0.8 2 0.4 1 0 -60 -20 20 60 100 °C 0.0 -60 160 -20 20 60 100 °C Tj 160 Tj Typ. capacitances C = f (VDS) parameter:VGS=0V, f = 1 MHz Forward characteristics of reverse diode IF = ƒ(VSD) parameter: Tj, tp = 80 µs 10 3 10 1 pF A IF C 10 2 10 0 Ciss Coss 10 1 10 -1 Tj = 25 °C typ Crss Tj = 150 °C typ Tj = 25 °C (98%) Tj = 150 °C (98%) 10 0 0 5 10 Semiconductor Group 15 20 25 30 V VDS 40 10 -2 0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0 VSD 7 12/05/1997