FDS4070N7 40V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for “low side” synchronous rectifier operation, providing an extremely low RDS(ON) in a small package. • 15.3 A, 40 V. RDS(ON) = 7 mΩ @ VGS = 10 V • High performance trench technology for extremely low RDS(ON) • High power and current handling capability Applications • Fast switching, low gate charge • Synchronous rectifier • FLMP SO-8 package: Enhanced thermal • DC/DC converter performance in industry-standard package size 5 Absolute Maximum Ratings Symbol Bottom-side Drain Contact 4 6 3 7 2 8 1 TA=25oC unless otherwise noted Ratings Units VDSS Drain-Source Voltage Parameter 40 V VGSS Gate-Source Voltage ± 20 V ID Drain Current 15.3 A – Continuous (Note 1a) – Pulsed 60 3.0 W –55 to +150 °C (Note 1a) 40 °C/W (Note 1) 0.5 PD Maximum Power Dissipation TJ, TSTG Operating and Storage Junction Temperature Range (Note 1a) Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient RθJC Thermal Resistance, Junction-to-Case Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS4070N7 FDS4070N7 13’’ 12mm 2500 units 2002 Fairchild Semiconductor Corporation FDS4070N7 Rev B1 (W) FDS4070N7 May 2003 Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units 310 mJ 15.3 A Drain-Source Avalanche Ratings (Note 2) EAS Drain-Source Avalanche Energy IAS Drain-Source Avalanche Current Single Pulse, VDD=40V, ID=15.3A Off Characteristics Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient ID = 250 µA VGS = 0 V, ID = 250 µA, Referenced to 25°C Zero Gate Voltage Drain Current VDS = 32 V, IGSSF Gate–Body Leakage, Forward IGSSR Gate–Body Leakage, Reverse BVDSS ∆BVDSS ∆TJ IDSS On Characteristics VGS(th) ∆VGS(th) ∆TJ RDS(on) 40 V mV/°C 42 1 µA VGS = 20 V, VDS = 0 V 100 nA VGS = –20 V, VDS = 0 V –100 nA VGS = 0 V (Note 2) ID = 250 µA VDS = VGS, ID = 250 µA, Referenced to 25 °C 2 3.9 –8 5 5 7.5 7 11 V ID(on) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance On–State Drain Current VGS = 10 V, ID = 15.3 A VGS = 10 V, ID=15.3A, TJ =125°C VGS = 10 V, VDS = 5 V gFS Forward Transconductance VDS = 10 V, ID = 15.3 A 52 S VDS = 20 V, f = 1.0 MHz V GS = 0 V, 2819 pF 600 pF 291 pF mV/°C 30 mΩ A Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics (Note 2) VDD = 20 V, VGS = 10 V, ID = 1 A, RGEN = 6 Ω td(on) Turn–On Delay Time tr Turn–On Rise Time td(off) Turn–Off Delay Time 41 66 ns tf Turn–Off Fall Time 29 46 ns 47 67 Qg Total Gate Charge Qgs Gate–Source Charge Qgd Gate–Drain Charge VDS = 20 V, VGS = 10 V ID = 15.3 A, 16 29 ns 12 22 ns nC 15 nC 14 nC FDS4070N7 Rev B1 (W) FDS4070N7 Electrical Characteristics Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units 2.5 A 1.2 V Drain–Source Diode Characteristics and Maximum Ratings IS VSD trr Qrr Maximum Continuous Drain–Source Diode Forward Current Drain–Source Diode Forward IS = 2.5 A VGS = 0 V, Voltage Diode Reverse Recovery Time IF = 15.3 A, diF/dt = 100 A/µs Diode Reverse Recovery Charge 0.7 (Note 2) 32 nS 39 nC Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 40°C/W when mounted on a 1in2 pad of 2 oz copper b) 85°C/W when mounted on a minimum pad of 2 oz copper Scale 1 : 1 on letter size pape 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0 FDS4070N7 Rev B1 (W) FDS4070N7 Electrical Characteristics FDS4070N7 Typical Characteristics 60 ID, DRAIN CURRENT (A) 3 6.0V 5.5V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS = 10V 50 7.0V 40 5.0V 30 20 4.5V 10 VGS = 5.0V 2.6 2.2 1.8 5.5V 6.0V 1.4 7.0V 10V 1 0.6 0 0 0.25 0.5 0.75 1 1.25 0 1.5 10 20 Figure 1. On-Region Characteristics. 50 60 0.015 ID = 7.7A ID = 15.3A VGS = 10V 1.6 RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 40 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 1.8 1.4 1.2 1 0.8 0.6 -50 -25 0 25 50 75 100 125 0.013 0.011 TA = 125oC 0.009 0.007 TA = 25oC 0.005 0.003 150 4 5 o TJ, JUNCTION TEMPERATURE ( C) 6 7 8 9 10 VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation withTemperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 60 IS, REVERSE DRAIN CURRENT (A) VDS = 5V 50 ID, DRAIN CURRENT (A) 30 ID, DRAIN CURRENT (A) VDS, DRAIN-SOURCE VOLTAGE (V) 40 30 TA =125oC 20 25oC 10 -55oC 3 3.5 4 4.5 5 TA = 125oC 1 25oC 0.1 -55oC 0.01 0.001 0.0001 0 2.5 VGS = 0V 10 5.5 VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 6 0 0.2 0.4 0.6 0.8 1 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDS4070N7 Rev B1 (W) FDS4070N7 Typical Characteristics 4000 ID = 15.3 VDS = 10V 20V 8 CAPACITANCE (pF) VGS, GATE-SOURCE VOLTAGE (V) 10 30V 6 4 3000 2000 COSS 1000 2 CRSS 0 0 0 10 20 30 40 0 50 10 20 Figure 7. Gate Charge Characteristics. 40 Figure 8. Capacitance Characteristics. 1000 P(pk), PEAK TRANSIENT POWER (W) 50 100 100µs RDS(ON) LIMIT 1ms 10ms 100ms 1s 10 10s DC 1 VGS = 10V SINGLE PULSE RθJA = 85oC/W 0.1 TA = 25oC 0.01 0.01 0.1 1 10 SINGLE PULSE RθJA = 85°C/W TA = 25°C 40 30 20 10 0 0.01 100 0.1 1 VDS, DRAIN-SOURCE VOLTAGE (V) 10 100 1000 t1, TIME (sec) Figure 9. Maximum Safe Operating Area. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 30 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) ID, DRAIN CURRENT (A) f = 1MHz VGS = 0 V CISS Figure 10. Single Pulse Maximum Power Dissipation. 1 D = 0.5 RθJA(t) = r(t) * RθJA RθJA = 85 °C/W 0.2 0.1 0.1 P(pk) 0.05 t1 0.02 0.01 t2 0.01 TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 SINGLE PULSE 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. FDS4070N7 Rev B1 (W) FDS4070N7 Dimensional Outline and Pad Layout FDS4070N7 Rev B1 (W) TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx FACT ActiveArray FACT Quiet Series Bottomless FASTâ CoolFET FASTr CROSSVOLT FRFET DOME GlobalOptoisolator EcoSPARK GTO E2CMOSTM HiSeC EnSignaTM I2C Across the board. Around the world. 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