RN2967~RN2969 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2967,RN2968,RN2969 Unit: mm Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications z Including two devices in US6 (ultra super mini type with 6 leads) z With built-in bias resistors z Simplify circuit design z Reduce a quantity of parts and manufacturing process z Complementary to RN1967~RN1969 Equivalent Circuit and Bias Resistor Values Type No. R1 (kΩ) R2 (kΩ) RN2967 10 47 RN2968 22 47 RN2969 47 22 JEDEC ― JEITA ― TOSHIBA 2-2J1B Weight: 6.8mg (typ.) Equivalent Circuit (Top View) Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common) Characteristic Collector-base voltage Collector-emitter voltage RN2967~2969 Symbol Rating Unit VCBO −50 V VCEO −50 V RN2967 Emitter-base voltage RN2968 −6 VEBO −7 RN2969 Collector current Collector power dissipation Junction temperature Storage temperature range RN2967~2969 V −15 IC −100 mA PC* 200 mW Tj 150 °C Tstg −55~150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). * : Total rating 1 2007-11-01 RN2967~RN2969 Electrical Characteristics (Ta = 25°C) (Q1, Q2 Common) Characteristic Collector cut-off current RN2967~2969 Symbol Test Circuit ICBO ― ICEO RN2967 Emitter cut-off current RN2968 IEBO RN2969 RN2967 DC current gain RN2968 RN2967~2969 Input voltage (OFF) RN2968 Typ. Max VCB = −50V, IE = 0 ― ― −100 ― VCE = −50V, IB = 0 ― ― −500 ― VEB = −6V, IC = 0 −0.081 ― −0.15 ― VEB = −7V, IC = 0 −0.078 ― −0.145 ― VEB = −15V, IC = 0 −0.167 ― −0.311 80 ― ― 80 ― ― 70 ― ― ― −0.1 −0.3 −0.7 ― −1.8 −1.0 ― −2.6 −2.2 ― −5.8 −0.5 ― −1.0 −0.6 ― −1.16 −1.5 ― −2.6 ― VCE (sat) ― IC = −5mA IB = −0.25mA ― VI (ON) ― RN2969 ― RN2967 ― RN2968 VCE = −5V, IC = −10mA ― RN2967 Input voltage (ON) Min ― hFE RN2969 Collector-emitter saturation voltage Test Condition VI (OFF) RN2969 ― VCE = −0.2V IC = −5mA VCE = −5V IC = −0.1mA ― Unit nA mA ― V V V Translation frequency RN2967~2969 fT ― VCE =−10V IC = −5mA ― 200 ― MHz Collector output capacitance RN2967~2969 Cob ― VCB = −10V, IE = 0, f = 1MHz ― 3 6 pF 7 10 13 15.4 22 28.6 RN2967 Input resistor Resistor ratio RN2968 ― R1 ― ― RN2969 ― 32.9 47 61.1 RN2967 ― 0.191 0.213 0.232 0.421 0.468 0.515 0.09 2.14 2.35 RN2968 RN2969 R1/R2 ― ― 2 ― kΩ ― 2007-11-01 RN2967~RN2969 (Q1, Q2 Common) 3 2007-11-01 RN2967~RN2969 (Q1, Q2 Common) 4 2007-11-01 RN2967~RN2969 Type Name Marking RN2967 RN2968 RN2969 5 2007-11-01 RN2967~RN2969 RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. 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