TOSHIBA 1SS401_07

BL Galaxy Electrical
Production specification
Schottky Barrier Diode
1SS401
FEATURES
Pb
z
Small total capacitance.
z
Low reverse current.
z
Low forward voltage:VF=0.38V(typ).
Lead-free
APPLICATIONS
z
For general purpose applications.
SOT-323
ORDERING INFORMATION
Type No.
Marking
Package Code
1SS401
D9
SOT-323
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Parameter
Symbol
Limits
Unit
Non-Repetitive Peak reverse voltage
VRM
25
V
Diode reverse voltage
VR
20
V
Forward continuous Current
IF
700
mA
Average rectified output current
IO
300
mA
Power Dissipation
Pd
100
mW
Junction temperature
Tj
125
℃
Storage temperature range
Tstg
-55-+125
℃
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Reverse breakdown voltage
Symbol
Test
conditions
MIN
Typ.
V(BR)R
IR=100μA
Reverse current
IR
VR=20V
Forward voltage
VF
IF=1mA
IF=10mA
IF=300mA
0.16
0.22
0.38
VR=0V, f=1MHz
46
Diode capacitance
Document number: BL/SSSKF014
Rev.A
CD
MAX
20
UNIT
V
50
μA
V
0.45
pF
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BL Galaxy Electrical
Production specification
Schottky Barrier Diode
1SS401
PACKAGE OUTLINE
Plastic surface mounted package
SOT-323
SOT-323
Dim
Min
Max
A
1.8
2.2
B
1.15
1.35
C
1.0Typical
D
0.15
0.35
E
0.25
0.40
G
1.2
1.4
H
0.02
0.1
J
K
0.1Typical
2.1
2.3
All Dimensions in mm
PACKAGE INFORMATION
Device
Package
Shipping
1SS401
SOT-323
3000/Tape&Reel
Document number: BL/SSSKF014
Rev.A
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