PRELIMINARY SFF120-28Q SOLID STATE DEVICES, INC. 14005 Stage Road * Santa Fe Springs, Ca 90670 Phone: (562) 404-4474 * Fax: (562) 404-1773 9.2 AMPS 100 VOLTS 0.35S QUAD N-CHANNEL POWER MOSFET DESIGNER'S DATA SHEET FEATURES: • Rugged construction with poly silicon gate • Low RDS (on) and high transconductance • Excellent high temperature stability • Very fast switching speed • Fast recovery and superior dv/dt performance • Increased reverse energy capability • Low input and transfer capacitance for easy paralleling • Hermetically sealed surface mount package • TX, TXV and Space Level screening available • Replaces 4x IRF120 Types in One Package 28 PIN CLCC MAXIMUM RATINGS CHARACTERISTIC SYMBOL VALUE UNIT Drain to Source Voltage VDS 100 Volts Gate to Source Voltage VGS ±20 Volts ID 9.2 Amps Top & Tstg -55 to +150 R 2JC 10 PD 12.5 9.5 Continuous Drain Current Operating and Storage Temperature Thermal Resistance, Junction to Case (All Four) @ TC = 25oC @ TC = 70oC Total Device Dissipation o o C C/W Watts PACKAGE OUTLINE: 28 PIN CLCC PIN OUT: MOSFET 1 DRAIN: GATE: SOURCE: MOSFET 2 DRAIN: GATE: SOURCE: MOSFET 3 DRAIN: GATE: SOURCE: MOSFET 4 DRAIN: GATE: SOURCE: (3 PLACES) 5, 6, 7 1 2, 3, 4 9, 10, 11 8 12, 13, 14 19, 20, 21 15 16, 17, 18 23, 24, 25 22 26, 27, 28 NOTE: All drain/source pins must be connected on the PC board in order to maximize current carrying capability and to minimize RDS (on) NOTE: All specifications are subject to change without notification. SCDs for these devices should be reviewed by SSDI prior to release. DATA SHEET #: F00225B PRELIMINARY SFF120-28Q SOLID STATE DEVICES, INC. 14005 Stage Road * Santa Fe Springs, Ca 90670 Phone: (562) 404-4474 * Fax: (562) 404-1773 ELECTRICAL CHARACTERISTICS @ TJ =25oC (Unless Otherwise Specified) SYMBOL MIN TYP MAX UNIT BVDSS 100 - - V RDS(on) - - 0.35 S ID(on) 9.2 - - A VGS(th) 2.0 - 4.0 V gfs 2.7 4.1 - S( É ) Zero Gate Voltage Drain Current (VDS = max rated Voltage, VGS = 0V) (VDS = 80% rated VDS, VGS = 0V, TA = 125oC) IDSS - - 25 250 :A Gate to Source Leakage Forward Gate to Source Leakage Reverse At rated VGS IGSS - - +100 -100 nA VGS = 10 V 80% rated VDS 60% rated ID VDD =50% rated VDS 50% rated ID RG = 18 S Qg Qgs Qgd td (on) tr td (off) tf - 10.7 2.9 5.1 13 30 19 20 16 4.4 7.7 20 45 29 30 VSD - - 2.5 V RATING Drain to Source Breakdown Voltage (VGS =0 V, ID =250:A) Drain to Source ON State Resistance (VGS = 10 V, 60% of Rated ID) ON State Drain Current (VDS > ID(on) x RDS(on) Max, VGS = 10 V) Gate Threshold Voltage (VDS =VGS, ID =250:A) Forward Transconductance (VDS > ID(on) x RDS (on) Max, IDS =60% rated ID) Total Gate Charge Gate to Source Charge Gate to Drain Charge Turn on Delay Time Rise Time Turn off DELAY Time Fall Time Diode Forvard Voltage (IS = rated ID, VGS = 0V, TJ = 25oC) o nC nsec Diode Reverse Recovery Time Reverse Recovery Charge TJ =25 C IF = rated ID di/dt = 100A/:sec trr QRR 55 0.25 140 0.65 260 1.3 nsec :C Input Capacitance Output Capacitance Reverse Transfer Capacitance VGS =0 Volts VDS =25 Volts f =1 MHz Ciss Coss Crss - 350 130 36 - pF For thermal derating curves and other characteristic curves please contact SSDI Marketing Department. NOTES: