CM150DX-34SA Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com Dual IGBT NX-Series Module 150 Amperes/1700 Volts H A D E F J K AK AL AG G Y L 8 9 AJ T M N 10 AB (4 PLACES) U AF (4 PLACES) S AP DETAIL "A" 1 V W R AM B 6 11 R Q AC AD 7 DETAIL "C" P AQ AR AS X 2 3 4 AA Z Y DETAIL "A" AE 5 AM AN AY Y AH Tolerance Otherwise Specified (mm) Division of Dimension Tolerance 0.5 to 3 ±0.2 over 3 to 6 ±0.3 over 6 to 30 ±0.5 over 30 to 120 ±0.8 over 120 to 400 ±1.2 The tolerance of size between terminals is assumed to ±0.4 AG C DETAIL "B" Es2(9) E2 (10) G2(8) Di2 C1 (11) Di1 C2E1 (6) Tr1 AW Th NTC C2E1 (7) Tr2 TH1 (1) TH2 (2) AE AW AX G1(3) Es1(4) Cs1(5) AV AU 45° K DETAIL "C" AT AQ Y DETAIL "B" Outline Drawing and Circuit Diagram Dimensions Dimensions Inches Millimeters A 5.98 152.0 AA 0.9±0.012 22.86±0.3 B 2.44 62.0 AB 0.22 Dia. 5.5 Dia. AC 1.97±0.02 50.0±0.5 C Inches 0.67+0.04/-0.02 Millimeters 17.0+1.0/-0.5 D 5.39 137.0 AD 2.26 E 4.79 121.7 AE 0.15 3.75 110.0±0.5 AF M6 M6 F 4.33±0.02 57.5 G 3.72 94.5 AG 0.28 7.0 H 0.60 15.14 AH 0.14 3.5 J 0.53 13.5 AJ 0.03 0.8 K 0.31 AK 0.81 20.5 17.0 7.75 L 1.33±0.012 33.91±0.3 AL 0.70 M 2.28±0.012 57.95±0.3 AM 0.12 3.0 N 1.54 39.0 AN 0.65 16.5 P 0.87 22.0 AP 0.49 12.5 Q 0.45±0.3 AQ R 0.55 14.0 AR 0.102 Dia. 2.6 Dia. S 0.47 12.0 AS 0.089 Dia. 2.25 Dia. T 0.24 6.0 AT 0.05 1.2 U 0.31 8.0 AU 0.03 0.65 V 0.26 6.5 AV 0.05 1.15 15.64 AW 0.54 13.7 7.24±0.3 AX 0.52 13.0 AY 0.285 W X Y Z 10/12 Rev. 0 0.017±0.012 0.62 0.28±0.012 0.15 1.95±0.012 3.81 0.18 4.5 Description: Powerex IGBT Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a half-bridge configuration with each transistor having a reverseconnected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Features: £ Low Drive Power £ Low VCE(sat) £ Discrete Super-Fast Recovery Free-Wheel Diode £ Isolated Baseplate for Easy Heat Sinking Applications: £ AC Motor Control £ Motion/Servo Control £ Photovoltaic/Fuel Cell Ordering Information: Example: Select the complete module number you desire from the table below -i.e. CM150DX-34SA is a 1700V (VCES), 150 Ampere Dual IGBT Power Module. Type Current Rating Amperes VCES Volts (x 50) CM 150 34 7.25 49.53±0.3 1 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com CM150DX-34SA Dual IGBT NX-Series Module 150 Amperes/1700 Volts Absolute Maximum Ratings, Tj = 25°C unless otherwise specified Inverter Part IGBT/FWDi Characteristics Symbol Rating Units Collector-Emitter Voltage (VGE = 0V) VCES 1700 Volts Gate-Emitter Voltage (VCE = 0V) VGES ±20 Volts Collector Current (DC, TC = 125°C)*2,*4 IC 150 Amperes Collector Current (Pulse, Repetitive)*3 ICRM 300 Amperes Ptot 1500 Watts Total Power Dissipation (TC = 25°C)*2,*4 Emitter Current (TC = 25°C)*2,*4 *1 150 Amperes Emitter Current (Pulse, Repetitive)*3 IERM*1 IE 300 Amperes Maximum Junction Temperature Tj(max) 175 °C Characteristics Symbol Rating Units Maximum Case Temperature*2 TC(max) 125 °C Operating Junction Temperature Tj(op) -40 to +150 °C Storage Temperature Tstg -40 to +125 °C Isolation Voltage (Terminals to Baseplate, RMS, f = 60Hz, AC 1 minute) VISO 4000 Volts Module *1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling diode (FWDi). *2 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface (mounting side) of the baseplate and the heatsink side just under the chips. Refer to the figure to the right for chip location. The heatsink thermal resistance should be measured just under the chips. *3 Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed Tj(max) rating. *4 Junction temperature (Tj) should not increase beyond maximum junction temperature (Tj(max)) rating. Tr2 Di2 Tr1 Th 34.0 27.2 26.8 25.3 Di1 0 76.8 89.5 44.7 39.8 30.5 0 LABEL SIDE Tr1, Tr2: IGBT, Di1, Di2: FWDi, Th: NTC Thermistor Each mark points to the center position of each chip. 2 10/12 Rev. 0 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com CM150DX-34SA Dual IGBT NX-Series Module 150 Amperes/1700 Volts Electrical Characteristics, Tj = 25°C unless otherwise specified Inverter Part IGBT/FWDi Characteristics Symbol Test Conditions Min. Typ. Max. Units Collector-Emitter Cutoff Current ICES VCE = VCES, VGE = 0V — — 1 mA Gate-Emitter Leakage Current IGES VGE = VGES, VCE = 0V — — 0.5 µA Gate-Emitter Threshold Voltage VGE(th) IC = 15mA, VCE = 10V 5.4 6 6.6 Volts Collector-Emitter Saturation Voltage VCE(sat) IC = 150A, VGE = 15V, Tj = 25°C*6 — 2.0 2.5 Volts (Terminal) IC = 150A, VGE = 15V, Tj = 125°C*6 — 2.2 — Volts IC = 150A, VGE = 15V, Tj = 150°C*6 — 2.25 — Volts VCE(sat) IC = 150A, VGE = 15V, Tj = 25°C*6 — 1.9 2.4 Volts (Chip) IC = 150A, VGE = 15V, Tj = 125°C*6 — 2.1 — Volts 150°C*6 — 2.15 — Volts — — 26 nF — — 1.1 nF — — 0.26 nF — 828 — nC — — 400 ns Collector-Emitter Saturation Voltage IC = 150A, VGE = 15V, Tj = Input Capacitance Cies Output Capacitance Coes Reverse Transfer Capacitance Cres Gate Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Emitter-Collector Voltage Emitter-Collector Voltage QG VCE = 10V, VGE = 0V VCC = 1000V, IC = 150A, VGE = 15V td(on) tr VCC = 1000V, IC = 150A, VGE = ±15V, — — 100 ns td(off) RG = 0Ω, Inductive Load — — 700 ns — — 600 ns — 4.1 5.3 Volts tf VEC*1 IE = 150A, VGE = 0V, Tj = 25°C*6 (Terminal) IE = 150A, VGE = 0V, Tj = 125°C*6 — 2.9 — Volts IE = 150A, VGE = 0V, Tj = 150°C*6 — 2.7 — Volts VEC*1 IE = 150A, VGE = 0V, Tj = 25°C*6 — 4.0 5.2 Volts (Chip) IE = 150A, VGE = 0V, Tj = 125°C*6 — 2.8 — Volts 150°C*6 IE = 150A, VGE = 0V, Tj = Reverse Recovery Time trr*1 — 2.6 — Volts VCC = 1000V, IE = 150A, VGE = ±15V — — 300 ns *1 Reverse Recovery Charge Qrr Turn-on Switching Energy per Pulse Eon RG = 1.6Ω, Inductive Load — 5.0 — µC VCC = 1000V, IC = IE = 150A, — 26 — mJ Turn-off Switching Energy per Pulse Eoff VGE = ±15V, RG = 1.6Ω, — 46 — mJ Reverse Recovery Energy per Pulse Err*1 Tj = 150°C, Inductive Load — 32 — mJ Main Terminals-Chip, — — 2.0 mΩ — 3.4 — Ω Internal Lead Resistance RCC' + EE' Per Switch,TC = 25°C*2 Internal Gate Resistance rg Per Switch *1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling diode (FWDi). *2 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface (mounting side) of the baseplate and the heatsink side just under the chips. Refer to the figure to the right for chip location. The heatsink thermal resistance should be measured just under the chips. *6 Pulse width and repetition rate should be such as to cause negligible temperature rise. Tr2 Di2 Tr1 Th 34.0 27.2 26.8 25.3 Di1 0 76.8 89.5 44.7 39.8 30.5 0 LABEL SIDE Tr1, Tr2: IGBT, Di1, Di2: FWDi, Th: NTC Thermistor Each mark points to the center position of each chip. 10/12 Rev. 0 3 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com CM150DX-34SA Dual IGBT NX-Series Module 150 Amperes/1700 Volts Electrical Characteristics, Tj = 25°C unless otherwise specified (continued) NTC Thermistor Part Characteristics Symbol Zero Power Resistance R25 Deviation of Resistance ∆R/R B Constant Test Conditions TC = 25°C*2 TC = 100°C, R100 = 493Ω B(25/50) Typ. Max. Units 4.85 5.00 5.15 kΩ -7.3 — +7.8 % — 3375 — K P25 TC = 25°C*2 — — 10 mW Thermal Resistance, Junction to Case*2 Rth(j-c)Q Per Inverter IGBT — — 0.10 K/W Case*2 Rth(j-c)D Per Inverter FWDi — — 0.16 K/W Rth(c-f) Thermal Grease Applied — 15 — K/kW 22 27 31 in-lb Power Dissipation Approximate by Equation*7 Min. Thermal Resistance Characteristics Thermal Resistance, Junction to Contact Thermal Resistance, Case to Heatsink*2 (Per 1 Module)*8 Mechanical Characteristics Mounting Torque Mt Mounting to Heatsink, M5 Screw Ms Mounting to Heatsink, M5 Screw 22 27 31 in-lb Creepage Distance ds Terminal to Terminal 17.0 — — mm Terminal to Baseplate 16.8 — — mm Clearance da Terminal to Terminal 10.0 — — mm Terminal to Baseplate 10.0 — — mm Weight m — 350 — Grams Flatness of Baseplate ec On Centerline X, Y*5 ±0 — +100 µm VCC Applied Across C1-E2 — 1000 1200 Volts VGE(on) Applied Across G1-Es1 / G2-Es2 13.5 15.0 16.5 Volts RG Per Switch 0 — 47 Ω Recommended Operating Conditons, Ta = 25°C *2 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface (mounting side) of the baseplate and the heatsink side just under the chips. Refer to the figure to the right for chip location. The heatsink thermal resistance should be measured just under the chips. *5 Baseplate (mounting side) flatness measurement points (X, Y) are shown in the figure below. R25 1 1 *7 B(25/50) = In( )/( – ) R50 T25 T50 R25; Resistance at Absolute Temperature T25 [K]; T25 = 25 [°C] + 273.15 = 298.15 [K] R50; Resistance at Absolute Temperature T50 [K]; T50 = 50 [°C] + 273.15 = 323.15 [K] *8 Typical value is measured by using thermally conductive grease of λ = 0.9 [W/(m • K)]. MOUNTING SIDE 4 Tr1 Th 34.0 27.2 26.8 25.3 Di1 0 76.8 89.5 LABEL SIDE 0 – : CONCAVE + : CONVEX MOUNTING SIDE Y MOUNTING SIDE X Tr2 Di2 44.7 External Gate Resistance 39.8 Gate (-Emitter Drive) Voltage 30.5 (DC) Supply Voltage Tr1, Tr2: IGBT, Di1, Di2: FWDi, Th: NTC Thermistor Each mark points to the center position of each chip. – : CONCAVE + : CONVEX 10/12 Rev. 0 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com CM150DX-34SA Dual IGBT NX-Series Module 150 Amperes/1700 Volts COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (CHIP - TYPICAL) OUTPUT CHARACTERISTICS (CHIP - TYPICAL) 4.5 Tj = 25°C 15 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) 250 VGE = 20V 11 200 150 10 100 9 50 0 8 0 2 4 6 8 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 50 100 150 200 250 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) COLLECTOR CURRENT, IC, (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (CHIP - TYPICAL) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (CHIP - TYPICAL) Tj = 25°C 8 IC = 300A 6 IC = 150A 4 IC = 90A 2 0 6 8 10 12 14 16 18 GATE-EMITTER VOLTAGE, VGE, (VOLTS) 10/12 Rev. 0 300 103 10 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) VGE = 15V Tj = 25°C Tj = 125°C Tj = 150°C 4.0 0 10 EMITTER CURRENT, IE, (AMPERES) COLLECTOR CURRENT, IC, (AMPERES) 300 20 Tj = 25°C Tj = 125°C Tj = 150°C 102 101 0 1 2 3 4 5 6 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) 5 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com CM150DX-34SA Dual IGBT NX-Series Module 150 Amperes/1700 Volts HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) CAPACITANCE VS. VCE (TYPICAL) 104 102 101 SWITCHING TIME, (ns) CAPACITANCE, Cies, Coes, Cres, (nF) Cies Coes 100 Cres 10-1 VGE = 0V 10-2 10-1 100 101 td(on) 102 tr VCC = 1000V VGE = ±15V RG = 0Ω Tj = 125°C Inductive Load 101 102 103 COLLECTOR CURRENT, IC, (AMPERES) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) SWITCHING TIME VS. GATE RESISTANCE (TYPICAL) 104 td(off) td(off) tf td(on) 102 tr VCC = 1000V VGE = ±15V RG = 0Ω Tj = 150°C Inductive Load 101 102 COLLECTOR CURRENT, IC, (AMPERES) 103 SWITCHING TIME, (ns) SWITCHING TIME, (ns) tf COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) 100 101 6 td(off) 100 101 102 104 103 103 103 td(on) tf tr 102 101 10-1 VCC = 1000V VGE = ±15V IC = 150A Tj = 125°C Inductive Load 100 101 102 EXTERNAL GATE RESISTANCE, RG, (Ω) 10/12 Rev. 0 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com CM150DX-34SA Dual IGBT NX-Series Module 150 Amperes/1700 Volts SWITCHING TIME VS. GATE RESISTANCE (TYPICAL) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 103 SWITCHING TIME, (ns) td(off) 103 tf td(on) tr 102 101 10-1 VCC = 1000V VGE = ±15V IC = 150A Tj = 150°C Inductive Load 100 101 102 REVERSE RECOVERY, Irr (A), trr (ns) 104 102 VCC = 1000V VGE = ±15V RG = 0Ω Tj = 125°C Inductive Load Irr trr 101 101 102 EMITTER CURRENT, IE, (AMPERES) EXTERNAL GATE RESISTANCE, RG, (Ω) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) GATE CHARGE VS. VGE 20 101 101 VCC = 1000V VGE = ±15V RG = 0Ω Tj = 150°C Inductive Load Irr trr 102 EMITTER CURRENT, IE, (AMPERES) 10/12 Rev. 0 103 GATE-EMITTER VOLTAGE, VGE, (VOLTS) REVERSE RECOVERY, Irr (A), trr (ns) 103 102 103 IC = 150A VCC = 1000V 15 10 5 0 0 200 400 600 800 1000 1200 GATE CHARGE, QG, (nC) 7 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com CM150DX-34SA Dual IGBT NX-Series Module 150 Amperes/1700 Volts 101 100 Eon Eoff Err 103 10-1 103 102 102 101 101 100 Eon Eoff Err 100 101 10-1 103 102 COLLECTOR CURRENT, IC, (AMPERES) EMITTER CURRENT, IE, (AMPERES) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) 103 102 101 Eon Eoff Err 100 101 GATE RESISTANCE, RG, (Ω) 8 102 VCC = 1000V VGE = ±15V RG = 0Ω Tj = 150°C COLLECTOR CURRENT, IC, (AMPERES) EMITTER CURRENT, IE, (AMPERES) VCC = 1000V VGE = ±15V IC = 150A Tj = 125°C 100 10-1 SWITCHING ENERGY, Eon, Eoff, (mJ) 101 103 REVERSE RECIVERY ENERGY, Err, (mJ) 102 100 101 SWITCHING ENERGY, Eon, Eoff, (mJ) REVERSE RECIVERY ENERGY, Err, (mJ) 102 VCC = 1000V VGE = ±15V RG = 0Ω Tj = 125°C 102 SWITCHING ENERGY, Eon, Eoff, (mJ) REVERSE RECIVERY ENERGY, Err, (mJ) SWITCHING ENERGY, Eon, Eoff, (mJ) 103 HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) REVERSE RECIVERY ENERGY, Err, (mJ) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) 102 101 VCC = 1000V VGE = ±15V IC = 150A Tj = 150°C 100 10-1 100 Eon Eoff Err 101 102 GATE RESISTANCE, RG, (Ω) 10/12 Rev. 0 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c') Zth = Rth • (NORMALIZED VALUE) CM150DX-34SA Dual IGBT NX-Series Module 150 Amperes/1700 Volts 100 10-3 10-1 10-2 10-3 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (MAXIMUM) 10-2 10-1 100 101 10-1 Single Pulse TC = 25°C Per Unit Base = Rth(j-c) = 0.10 K/W (IGBT) Rth(j-c) = 0.16 K/W (FWDi) 10-2 10-5 10-4 10-3 10-3 TIME, (s) 10/12 Rev. 0 9