Vishay B40C1000G-E4 Glass passivated single-phase bridge rectifier Datasheet

B40C1000G, B80C1000G, B125C1000G, B250C1000G, B380C1000G
www.vishay.com
Vishay Semiconductors
Glass Passivated Single-Phase Bridge Rectifier
FEATURES
+
• Ideal for printed circuit boards
~
• High case dielectric strength
e4
• High surge current capability
~
~
+
−
~
• Typical IR less than 0.1 μA
−
• Solder dip 275 °C max. 10 s, per JESD 22-B106
Case Style WOG
• Material categorization: For definitions of
compliance please see www.vishay.com/doc?99912
PRIMARY CHARACTERISTICS
Package
TYPICAL APPLICATIONS
WOG
IF(AV)
1.0 A
VRRM
65 V, 125 V, 200 V, 400 V, 600 V
IFSM
45 A
IR
10 μA
VF at IF = 1.0 A
1.0 V
TJ max.
125 °C
Diode variations
Quad
General purpose use in AC/DC bridge full wave rectification
for power supply, adapter, charger, lighting ballaster on
consumers, and home appliances applications.
MECHANICAL DATA
Case: WOG
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E4 - RoHS-compliant, commercial grade
Terminals: Silver plated
J-STD-002 and JESD22-B102
leads,
solderable
per
Polarity: As marked on body
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
B40
C1000G
B80
C1000G
B125
C1000G
B250
C1000G
B380
C1000G
UNIT
Maximum repetitive peak reverse voltage
VRRM
65
125
200
400
600
V
Maximum RMS input voltage R- and C-load
VRMS
40
80
125
250
380
V
Maximum DC blocking voltage
VDC
65
125
200
400
600
V
Maximum peak working voltage
VRWM
90
180
300
600
800
V
Maximum non-repetitive peak voltage
VRSM
100
200
350
600
1000
V
Maximum repetitive peak forward surge current
Maximum average forward output current
for free air operation at TA = 45 °C
R- and L-load
C-load
Peak forward surge current single sine-wave on rated load
Rating for fusing at TJ = 125 °C (t < 8.3 ms)
Minimum series resistor C-load at VRMS = ± 10 %
+ 50 %
- 10 %
Maximum load capacitance
Operating junction temperature range
Storage temperature range
IFRM
10
A
1.2
IF(AV)
A
1.0
IFSM
45
A
I2t
10
A2s
RT
1.0
2.0
4.0
8.0
12

CL
5000
2500
1000
500
200
μF
TJ
- 40 to + 125
°C
TSTG
- 40 to + 150
°C
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
B80
C1000G
B125
C1000G
B250
C1000G
B380
C1000G
TEST CONDITIONS
Maximum instantaneous forward
voltage drop per diode
1.0 A
VF
1.0
V
Maximum reverse current at rated
repetitive peak voltage per diode
TA = 25 °C
IR
10
μA
Revision: 08-Jul-13
SYMBOL
B40
C1000G
PARAMETER
UNIT
Document Number: 88500
1
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
B40C1000G, B80C1000G, B125C1000G, B250C1000G, B380C1000G
www.vishay.com
Vishay Semiconductors
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Typical thermal resistance (1)
B40
C1000G
B80
C1000G
B125
C1000G
RJA
36
RJL
11
B250
C1000G
B380
C1000G
UNIT
°C/W
Note
(1) Thermal resistance from junction to ambient and from junction to lead mounted on PCB at 0.375" (9.5 mm) lead lengths with 0.22" x 0.22"
(5.5 mm x 5.5 mm) copper pads
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
1.12
51
100
Plastic bag
B380C1000G-E4/51
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
50
50 to 60 Hz
Resistive or Inductive Load
Instantaneous Reverse Current (µA)
Bridge Output Full Wave Rectified
Current Average (A)
1.2
1.0
Capacitive
Load
0.8
0 - 10 µF
10 - 100 µF
> 100 µF
0.6
0.4
P.C.B.
0.375"
(9.5 mm)
0.2
Copper Pads
0.22 x 0.22" (5.5 x 5.5 mm)
0
40
30
20
10
0
20
40
60
80
100
120
140
10
1
100
Ambient Temperature (°C)
Number of Cycles at 50 Hz
Fig. 1 - Derating Curves Output Rectified Current for
B40C1000G...B125C1000G
Fig. 3 - Maximum Non-Repetitive Peak Forward Surge
Current Per Diode
1.2
100
50 to 60 Hz
Resistive or Inductive Load
Instantaneous Forward Current (A)
Average Forward Output Current (A)
TJ = 125 °C
10 ms Single Half Sine-Wave
1.0
Capacitive
Load
0.8
0 - 10 µF
10 - 100 µF
> 100 µF
0.6
0.4
P.C.B.
0.375"
(9.5 mm)
0.2
Copper Pads
0.22 x 0.22" (5.5 x 5.5 mm)
0
20
40
60
80
100
120
140
TJ = 25 °C
Pulse Width = 300 µs
1 % Duty Cycle
10
1
0.1
0.01
0.4
0.6
0.8
1.0
1.2
1.4
Ambient Temperature (°C)
Instantaneous Forward Voltage (V)
Fig. 2 - Derating Curves Output Rectified Current for
B250C1000G...B380C1000G
Fig. 4 - Typical Forward Characteristics Per Diode
Revision: 08-Jul-13
Document Number: 88500
2
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
B40C1000G, B80C1000G, B125C1000G, B250C1000G, B380C1000G
www.vishay.com
Vishay Semiconductors
100
1
Junction Capacitance (pF)
Instantaneous Reverse Current (µA)
10
TJ = 100 °C
0.1
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
10
TJ = 25 °C
0.01
0
20
40
60
80
1
0.1
100
1
10
100
Percent of Rated Peak Reverse Voltage (%)
Reverse Voltage (V)
Fig. 5 - Typical Reverse Characteristics Per Diode
Fig. 6 - Typical Junction Capacitance Per Diode
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Case Style WOG
0.388 (9.86)
0.348 (8.84)
0.220 (5.6)
0.160 (4.1)
1.0 (25.4) MIN.
0.032 (0.81)
0.028 (0.71)
0.348 (8.84)
0.308 (7.82)
0.060 (1.52)
0.020 (0.51)
0.220 (5.6)
0.180 (4.6)
0.220 (5.6)
0.180 (4.6)
Revision: 08-Jul-13
Document Number: 88500
3
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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www.vishay.com
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Revision: 02-Oct-12
1
Document Number: 91000
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