CMXD6001 SURFACE MOUNT TRIPLE ISOLATED LOW LEAKAGE SILICON SWITCHING DIODES w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMXD6001 type contains three (3) Isolated Silicon Switching Diodes, manufactured by the epitaxial planar process, epoxy molded in a SUPERmini™ surface mount package, and designed for switching applications requiring extremely low leakage. MARKING CODE: X01 SOT-26 CASE MAXIMUM RATINGS: (TA=25°C) Continuous Reverse Voltage SYMBOL VR 75 V Peak Repetitive Reverse Voltage VRRM IF 100 V 250 mA IFRM IFSM 250 mA 4.0 A IFSM PD 1.0 A 350 mW Continuous Forward Current Peak Repetitive Forward Current Peak Forward Surge Current, tp=1.0μs Peak Forward Surge Current, tp=1.0s Power Dissipation Operating and Storage Junction Temperature Thermal Resistance TJ, Tstg ΘJA UNITS -65 to +150 °C 357 °C/W ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS IR VR=75V IR=100μA BVR VF MIN MAX UNITS 500 pA 100 V IF=1.0mA IF=10mA 0.85 V 0.95 V 1.1 V CT IF=100mA VR=0, f=1.0MHz 2.0 pF trr IR=IF=10mA, Irr=1.0mA, RL=100Ω 3.0 μs VF VF R3 (12-February 2010) CMXD6001 SURFACE MOUNT TRIPLE ISOLATED LOW LEAKAGE SILICON SWITCHING DIODES SOT-26 CASE - MECHANICAL OUTLINE PIN CONFIGURATION LEAD CODE: 1) Anode D1 2) Anode D2 3) Anode D3 4) Cathode D3 5) Cathode D2 6) Cathode D1 MARKING CODE: X01 R3 (12-February 2010) w w w. c e n t r a l s e m i . c o m