600V 15A
APT15D60K
APT15D60SA
APT15D60KG* APT15D60SAG*
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
ULTRAFAST SOFT RECOVERY RECTIFIER DIODE
PRODUCT APPLICATIONS
PRODUCT FEATURES
PRODUCT BENEFITS
• Anti-Parallel Diode
-Switchmode Power Supply
-Inverters
• Free Wheeling Diode
-Motor Controllers
-Converters
-Inverters
• Snubber Diode
• Ultrafast Recovery Times
• Low Losses
• Soft Recovery Characteristics
• Low Noise Switching
D2PAK
1
• Cooler Operation
• Popular TO-220 Package or
Surface Mount D2 PAK Package
• Higher Reliability Systems
• Low Forward Voltage
• Low Leakage Current
• PFC
2
2
1
• Increased System Power
Density
1 - Cathode
2 - Anode
Back of Case - Cathode
MAXIMUM RATINGS
Symbol
VR
All Ratings: TC = 25°C unless otherwise specified.
Characteristic / Test Conditions
APT15D60K(G)_SA(G)
UNIT
600
Volts
Maximum D.C. Reverse Voltage
VRRM
Maximum Peak Repetitive Reverse Voltage
VRWM
Maximum Working Peak Reverse Voltage
IF(AV)
Maximum Average Forward Current (TC = 133°C, Duty Cycle = 0.5)
15
RMS Forward Current (Square wave, 50% duty)
32
IF(RMS)
IFSM
TJ,TSTG
TL
Non-Repetitive Forward Surge Current (TJ = 45°C, 8.3ms)
Amps
110
-55 to 175
Operating and StorageTemperature Range
°C
300
Lead Temperature for 10 Sec.
STATIC ELECTRICAL CHARACTERISTICS
Forward Voltage
IRM
Maximum Reverse Leakage Current
CT
Junction Capacitance, VR = 200V
MIN
TYP
MAX
IF = 15A
1.6
1.8
IF = 30A
1.9
IF = 15A, TJ = 125°C
1.4
Volts
VR = VR Rated
250
VR = VR Rated, TJ = 125°C
500
Microsemi Website - http://www.microsemi.com
23
UNIT
µA
pF
11-2008
VF
Characteristic / Test Conditions
053-6010 Rev K
Symbol
DYNAMIC CHARACTERISTICS
Symbol
APT15D60K(G)_SA(G)
Characteristic
Test Conditions
trr
Reverse Recovery Time
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IRRM
trr
MIN
TYP
-
21
-
80
-
95
-
3
-
150
ns
-
520
nC
-
7
-
60
ns
-
810
nC
-
22
Amps
MIN
TYP
IF = 1A, diF/dt = -100A/µs, VR = 30V, TJ = 25°C
VR = 400V, TC = 25°C
Reverse Recovery Time
Qrr
IF = 15A, diF/dt = -200A/µs
Reverse Recovery Charge
IRRM
trr
VR = 400V, TC = 125°C
Maximum Reverse Recovery Current
Reverse Recovery Time
Qrr
IF = 15A, diF/dt = -1000A/µs
Reverse Recovery Charge
IRRM
VR = 400V, TC = 125°C
Maximum Reverse Recovery Current
UNIT
ns
IF = 15A, diF/dt = -200A/µs
Maximum Reverse Recovery Current
MAX
nC
-
-
Amps
Amps
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol
Characteristic / Test Conditions
RθJC
Junction-to-Case Thermal Resistance
RθJA
Junction-to-Ambient Thermal Resistance
WT
°C/W
80
0.07
oz
1.9
g
Maximum Mounting Torque
10
lb•in
1.1
N•m
Microsemi Reserves the right to change, without notice, the specifications and information contained herein.
0.9
1.00
0.7
0.80
0.5
Note:
0.60
PDM
Z JC, THERMAL IMPEDANCE (°C/W)
θ
1.40
1.20
0.3
0.40
t
Duty Factor D = 1/t2
Peak TJ = PDM x ZθJC + TC
0.1
SINGLE PULSE
0.05
0
10
-5
10-3
10-2
10-1
1.0
RECTANGULAR PULSE DURATION (seconds)
FIGURE 1a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
10
-4
RC MODEL
11-2008
Junction
temp (°C)
053-6010 Rev K
t1
t2
0.20
UNIT
1.35
Package Weight
Torque
MAX
0.583 °C/W
0.00222 J/°C
0.767 °C/W
0.0598 J/°C
Power
(watts)
Case temperature (°C)
FIGURE 1b, TRANSIENT THERMAL IMPEDANCE MODEL
APT15D60K(G)_SA(G)
TYPICAL PERFORMANCE CURVES
180
50
40
30
TJ = 25°C
TJ = 125°C
20
TJ = 150°C
10
trr, REVERSE RECOVERY TIME
(ns)
IF, FORWARD CURRENT
(A)
60
TJ = -55°C
0
0.5
1
1.5
2
2.5
3
VF, ANODE-TO-CATHODE VOLTAGE (V)
Figure 2. Forward Current vs. Forward Voltage
Qrr, REVERSE RECOVERY CHARGE
(nC)
1200
T = 125°C
J
V = 400V
R
30A
1000
800
15A
600
400
7.5A
200
0
0
200
400
600
800 1000 1200
-diF /dt, CURRENT RATE OF CHANGE (A/µs)
Figure 4. Reverse Recovery Charge vs. Current Rate of Change
1.2
1.0
IRRM
0.8
120
15A
100
7.5A
80
60
40
0
200
400
600
800 1000 1200
-diF /dt, CURRENT RATE OF CHANGE(A/µs)
Figure 3. Reverse Recovery Time vs. Current Rate of Change
T = 125°C
J
V = 400V
R
30A
25
20
15
15A
10
7.5A
5
0
200
400
600
800 1000 1200
-diF /dt, CURRENT RATE OF CHANGE (A/µs)
Figure 5. Reverse Recovery Current vs. Current Rate of Change
40
Duty cycle = 0.5
T = 175°C
J
35
trr
Qrr
30
0
Qrr
0.6
0.4
140
0
30
IF(AV) (A)
Kf, DYNAMIC PARAMETERS
(Normalized to 1000A/µs)
trr
R
30A
20
IRRM, REVERSE RECOVERY CURRENT
(A)
0
T = 125°C
J
V = 400V
160
25
20
15
10
0.2
0.0
5
0
0
25
50
75
100
125
150
TJ, JUNCTION TEMPERATURE (°C)
Figure 6. Dynamic Parameters vs. Junction Temperature
25
50
75
100
125
150
175
Case Temperature (°C)
Figure 7. Maximum Average Forward Current vs. CaseTemperature
140
120
100
11-2008
80
60
40
20
0
1
10
100 200
VR, REVERSE VOLTAGE (V)
Figure 8. Junction Capacitance vs. Reverse Voltage
053-6010 Rev K
CJ, JUNCTION CAPACITANCE
(pF)
160
APT15D60K(G)_SA(G)
Vr
diF /dt Adjust
+18V
APT5018BLL
0V
D.U.T.
30μH
trr/Qrr
Waveform
PEARSON 2878
CURRENT
TRANSFORMER
Figure 9. Diode Test Circuit
1
IF - Forward Conduction Current
2
diF /dt - Rate of Diode Current Change Through Zero Crossing.
3
IRRM - Maximum Reverse Recovery Current.
4
trr - Reverse Recovery Time, measured from zero crossing where diode
current goes from positive to negative, to the point at which the straight
line through IRRM and 0.25 IRRM passes through zero.
5
1
4
Zero
5
0.25 IRRM
3
2
Qrr - Area Under the Curve Defined by IRRM and trr.
Figure 10, Diode Reverse Recovery Waveform and Definitions
TO-263 D2 (SA) Package Outline
TO-220 (K) Package Outline
e3 100% Sn
Cathode
(Heat Sink)
e3 100% Sn
4.45 (.175)
4.57 (.180)
1.27 (.050)
1.32 (.052)
0.050 (.002)
10.06 (.396)
10.31(.406)
1.40 (.055)
1.65 (.065)
8.51 (.335)
8.76(.345)
7.54 (.297)
7.68 (.303)
6.02 (.237)
6.17 (.243)
0.330 (.013)
0.432 (.017)
0.000 (.000)
0.254 (.010)
2.62 (.103)
2.72 (.107)
1.22 (.048)
1.32 (.052)
{3 Plcs.}
2.54 (.100) BSC
{2 Plcs.}
3.68 (.145)
6.27 (.247)
(Base of Lead)
Heat Sink (Cathode)
and Leads are Plated
Anode
Cathode
11-2008
053-6010 Rev K
0.762 (.030)
0.864 (.034)
{2 Plcs.}
Dimensions in Millimeters and (Inches)
Microsemi’s products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583
4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262
and foreign patents. US and Foreign patents pending. All Rights Reserved.