FDMS8670S N-Channel PowerTrench® SyncFETTM 30V, 42A, 3.5mΩ Features tm General Description Max rDS(on) = 3.5mΩ at VGS = 10V, ID = 20A The FDMS8670S has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic Schottky body diode. Max rDS(on) = 5.0mΩ at VGS = 4.5V, ID = 17A Advanced Package and Silicon combination for low rDS(on) and high efficiency SyncFET Schottky Body Diode MSL1 robust package design Application RoHS Compliant Synchronous Rectifier for DC/DC Converters Notebook Vcore/ GPU low side switch Networking Point of Load low side switch Telecom secondary side rectification Pin 1 S D D D S S G D D 5 4 G D 6 3 S D 7 2 S D 8 1 S Power 56 (Bottom view) MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage Drain Current -Continuous (Package limited) -Continuous (Silicon limited) ID ±20 V 42 TC = 25°C 116 TA = 25°C 20 -Pulsed TJ, TSTG Units V TC = 25°C -Continuous PD Ratings 30 A 200 Power Dissipation TC = 25°C Power Dissipation TA = 25°C 78 (Note 1a) Operating and Storage Junction Temperature Range 2.5 -55 to +150 W °C Thermal Characteristics RθJC Thermal Resistance, Junction to Case 1.6 RθJA Thermal Resistance, Junction to Ambient (Note 1a) 50 °C/W Package Marking and Ordering Information Device Marking FDMS8670S Device FDMS8670S ©2007 Fairchild Semiconductor Corporation FDMS8670S Rev.C3 Package Power 56 1 Reel Size 13’’ Tape Width 12mm Quantity 3000 units www.fairchildsemi.com FDMS8670S N-Channel PowerTrench® SyncFETTM February 2007 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 1mA, VGS = 0V ∆BVDSS ∆TJ Breakdown Voltage Temperature Coefficient 30 V ID = 50mA, referenced to 25°C IDSS Zero Gate Voltage Drain Current VDS = 24V, VGS = 0V 500 µA IGSS Gate to Source Leakage Current VGS = ±20V, VDS = 0V ±100 nA 3 V 17 mV/°C On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 1mA ∆VGS(th) ∆TJ Gate to Source Threshold Voltage Temperature Coefficient ID = 50mA, referenced to 25°C -2.8 VGS = 10V, ID = 20A 2.8 3.5 rDS(on) Drain to Source On Resistance VGS = 4.5V, ID = 17A 3.6 5.0 VGS = 10V, ID = 20A ,TJ = 125°C 3.9 6.0 VDS = 10V, ID = 20A 98 gFS Forward Transconductance 1 1.5 mV/°C mΩ S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance VDS = 15V, VGS = 0V f = 1MHz f = 1MHz 3005 4000 pF 865 1150 pF 320 480 pF 1.4 5.0 Ω 14 26 ns 19 35 ns 37 60 ns 10 20 ns Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Qg(TOT) Total Gate Charge at 10V VGS = 0V to 10V 52 73 nC Qg(4.5V) Total Gate Charge at 4.5V 34 nC Gate to Source Gate Charge VGS = 0V to 4.5V VDS = 15V ID = 20A 24 Qgs Qgd Gate to Drain “Miller” Charge VDD = 15V, ID = 20A VGS = 10V, RGEN = 5Ω 8 nC 10 nC Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0V, IS = 2A IF = 20A, di/dt = 300A/µs 0.4 0.7 V 26 42 ns 24 39 nC Notes: 1: RθJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by the user's board design. b. 125°C/W when mounted on a minimum pad of 2 oz copper a. 50°C/W when mounted on a 1 in2 pad of 2 oz copper 2: Pulse time < 300µs, Duty cycle < 2%. FDMS8670S Rev.C3 2 www.fairchildsemi.com FDMS8670S N-Channel PowerTrench® SyncFETTM Electrical Characteristics TJ = 25°C unless otherwise noted PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX VGS = 10V 150 VGS = 3.5V VGS = 4.5V 120 VGS = 4V 90 60 VGS = 3V 30 0 0 1 2 3 4.0 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE ID, DRAIN CURRENT (A) 180 4 PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX 3.5 VGS = 3V 3.0 VGS = 3.5V 2.5 VGS = 4V 2.0 VGS = 4.5V 1.5 1.0 VGS = 10V 0.5 0 30 60 150 180 Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 10 1.8 ID = 20A VGS = 10V 1.6 rDS(on), DRAIN TO SOURCE ON-RESISTANCE (mΩ) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 120 ID, DRAIN CURRENT(A) VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 1. On Region Characteristics 1.4 1.2 1.0 0.8 0.6 -75 -50 IS, REVERSE DRAIN CURRENT (A) 120 90 60 TJ = 25oC 30 TJ = -55oC 0 2 3 VGS, GATE TO SOURCE VOLTAGE (V) 4 Figure 5. Transfer Characteristics FDMS8670S Rev.C3 6 TJ = 125oC 4 TJ = 25oC 2 4 5 6 7 8 9 VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 4. On-Resistance vs Gate to Source Voltage PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX TJ = 125oC PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX 8 3 150 1 ID = 20A -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) Figure 3. Normalized On Resistance vs Junction Temperature ID, DRAIN CURRENT (A) 90 20 10 VGS = 0V 1 TJ = 125oC TJ = 25oC 0.1 TJ = -55oC 0.01 1E-3 0.0 0.1 0.2 0.3 0.4 0.5 0.6 VSD, BODY DIODE FORWARD VOLTAGE (V) 0.7 Figure 6. Source to Drain Diode Forward Voltage vs Source Current 3 www.fairchildsemi.com FDMS8670S N-Channel PowerTrench® SyncFETTM Typical Characteristics TJ = 25°C unless otherwise noted VGS, GATE TO SOURCE VOLTAGE(V) 10 5000 8 CAPACITANCE (pF) Ciss VDD = 10V 6 VDD = 15V VDD = 20V 4 2 0 0 10 20 30 40 Qg, GATE CHARGE(nC) 50 1000 Coss 100 0.1 60 Figure 7. Gate Charge Characteristics 30 120 ID, DRAIN CURRENT (A) IAS, AVALANCHE CURRENT(A) 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 8. Capacitance vs Drain to Source Voltage 40 10 TJ = 25oC TJ = 125oC 100 VGS = 10V 80 60 VGS = 4.5V 40 Limited by Package 20 o RθJC = 1.6 C/W 1 0.01 0.1 1 10 100 tAV, TIME IN AVALANCHE(ms) 0 1000 25 P(PK), PEAK TRANSIENT POWER (W) 1ms 10ms 1 0.1 100ms OPERATION IN THIS AREA MAY BE LIMITED BY rDS(on) 1s 10s SINGLE PULSE TJ = MAX RATED TA = 25OC 0.01 1E-3 0.1 1 10 DC 80 VDS, DRAIN to SOURCE VOLTAGE (V) Figure 11. Forward Bias Safe Operating Area FDMS8670S Rev.C3 100 125 150 Figure 10. Maximum Continuous Drain Current vs Case Temperature 100us 10 75 o 300 100 50 TC, CASE TEMPERATURE ( C) Figure 9. Unclamped Inductive Switching Capability ID, DRAIN CURRENT (A) Crss f = 1MHz VGS = 0V 500 FOR TEMPERATURES VGS = 10V 100 ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: 150 – T A ----------------------125 I = I25 TA = 25oC 10 SINGLE PULSE 1 0.6 -3 10 -2 10 -1 0 1 10 10 10 t, PULSE WIDTH (s) 2 10 3 10 Figure 12. Single Pulse Maximum Power Dissipation 4 www.fairchildsemi.com FDMS8670S N-Channel PowerTrench® SyncFETTM Typical Characteristics TJ = 25°C unless otherwise noted NORMALIZED THERMAL IMPEDANCE, ZθJA 2 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 0.01 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA SINGLE PULSE 1E-3 -3 10 -2 10 -1 0 10 10 1 10 2 10 3 10 t, RECTANGULAR PULSE DURATION (s) Figure 13. Transient Thermal Response Curve FDMS8670S Rev.C3 5 www.fairchildsemi.com FDMS8670S N-Channel PowerTrench® SyncFETTM Typical Characteristics TJ = 25°C unless otherwise noted SyncFET Schottky body diode Characteristics Schottky barrier diodes exhibit significant leakage at high temperature and high reverse voltage. This will increase the power in the device. IDSS, REVERSE LEAKAGE CURRENT (A) IDSS , REVERSE IDSS , REVERSELEAKAGE LEAKAGECURRENT CURRENT(A) (A) Fairchild’s SyncFET process embeds a Schottky diode in parallel with PowerTrench MoSFET. This diode exhibits similar characteristics to a discrete external Schottky diode in parallel with a MOSFET. Figure 14 shows the reverses recovery characteristic of the FDMS8670S. 0.1 0.1 0.1 o TA = 125 T =C125oC TJ =J 125oC CURRENT: 0.8A/Div 0.01 0.01 0.01 o o oC T=J = 100 TA =TJ100 100 CC 1E-3 1E-3 1E-3 1E-4 1E-4 1E-4 o TJT= =2525 CoC J TA = 25oC 1E-5 1E-5 1E-50 0 55 5 1010 10 1515 15 20 20 20 25 25 30 30 25 30 TIME: 12.5nS/Div VDS, REVERSE VOLTAGE VDS, REVERSE VOLTAGE(V) (V) VDS, REVERSE VOLTAGE (V) Figure 14. FDMS8670S SyncFET Body Diode reverse recovery characteristics Figure 15. SyncFET Body Diode reverse leakage vs drain to source voltage FDMS8670S Rev.C3 6 www.fairchildsemi.com FDMS8670S N-Channel PowerTrench® SyncFETTM Typical Characteristics (continued) FDMS8670S N-Channel PowerTrench® SyncFETTM www.fairchildsemi.com 7 FDMS8670S Rev.C3 The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 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FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I22 FDMS8670S Rev. C3 8 www.fairchildsemi.com FDMS8670S N-Channel PowerTrench® SyncFETTM TRADEMARKS