Preliminary Datasheet BCR16LM-16LB Triac Medium Power Use R07DS0546EJ0100 Rev.1.00 Sep 22, 2011 Features The Product guaranteed maximum junction temperature 150C Insulated Type Planar Type UL Recognized : File No. E223904 IT (RMS) : 16 A VDRM : 800 V IFGTI, IRGTI, IRGT III : 30 mA Viso : 1800V Outline RENESAS Package code: PRSS0003AF-A) (Package name: TO-220FL) 2 3 1. T1 Terminal 2. T2 Terminal 3. Gate Terminal 1 1 2 3 Applications Switching mode power supply, washing machine, vacuum cleaner, copying machine, motor control, heater control, and other general purpose AC power control applications Maximum Ratings Parameter Voltage class 16 800 960 Symbol Note1 Repetitive peak off-state voltage Non-repetitive peak off-state voltageNote1 Notes: 1. Gate open. VDRM VDSM Parameter RMS on-state current Symbol IT (RMS) Ratings 16 Unit A Surge on-state current ITSM 160 A I2t 106.5 A2s PGM PG (AV) VGM IGM Tj Tstg — Viso 5 0.5 10 2 –40 to +150 –40 to +150 1.5 1800 W W V A C C g V I2t for fusion Peak gate power dissipation Average gate power dissipation Peak gate voltage Peak gate current Junction Temperature Storage temperature Mass Isolation voltage R07DS0546EJ0100 Rev.1.00 Sep 22, 2011 Unit V V Conditions Commercial frequency, sine full wave 360°conduction, Tc = 78C 60 Hz sinewave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60 Hz, surge on-state current Typical value Ta = 25C, AC 1 minute, T1 T2 G terminal to case Page 1 of 7 BCR16LM-16LB Preliminary Electrical Characteristics Parameter Repetitive peak off-state current On-state voltage Symbol IDRM VTM Min. — — Typ. — — Max. 2.0 1.5 Unit mA V Test conditions Tj = 150C, VDRM applied Tc = 25C, ITM = 25 A, instantaneous measurement Gate trigger voltageNote2 VFGT VRGT VRGT — — — — — — 1.5 1.5 1.5 V V V Tj = 25C, VD = 6 V, RL = 6 , RG = 330 Gate trigger curentNote2 IFGT IRGT IRGT — — — — — — 30 30 30 mA mA mA Tj = 25C, VD = 6 V, RL = 6 , RG = 330 VGD 0.2 0.1 — 10 1 — — — — — — — 4.0 — — V V C/W V/s V/s Gate non-trigger voltage Thermal resistance Critical-rate of rise of off-state commutation voltageNote4 Rth (j-c) (dv/dt)c Tj = 125C, VD = 1/2 VDRM Tj = 150C, VD = 1/2 VDRM Junction to caseNote3 Tj = 125C Tj = 150C Notes: 2. Measurement using the gate trigger characteristics measurement circuit. 3. The contact thermal resistance Rth (c-f) in case of greasing is 0.5C/W. 4. Test conditions of the critical-rate of rise of off-state commutation voltage is shown in the table below. Test conditions 1. Junction temperature Tj = 125C/150C 2. Rate of decay of on-state commutating current (di/dt)c = –8.0 A/ms 3. Peak off-state voltage VD = 400 V R07DS0546EJ0100 Rev.1.00 Sep 22, 2011 Commutating voltage and current waveforms (inductive load) Supply Voltage Time Main Current (di/dt)c Time Main Voltage (dv/dt)c Time VD Page 2 of 7 BCR16LM-16LB Preliminary Performance Curves Maximum On-State Characteristics Rated Surge On-State Current 102 200 Surge On-State Current (A) 101 100 10−1 0.5 1.0 1.5 2.0 2.5 3.0 3.5 80 40 101 102 Conduction Time (Cycles at 60Hz) Gate Characteristics (I, II and III) Gate Trigger Current vs. Junction Temperature VGM = 10V PG(AV) = 0.5W 101 PGM = 5W IGM = 2A VGT = 1.5V 100 IGT = 30mA VGD = 0.1V 10−1 1 10 102 103 104 103 Typical Example 102 IFGT I IRGT III IRGT I VD = 6V RL = 6Ω 101 –40 0 40 80 120 160 Gate Current (mA) Junction Temperature (°C) Gate Trigger Voltage vs. Junction Temperature Maximum Transient Thermal Impedance Characteristics (Junction to case) 103 Typical Example 102 VD = 6V RL = 6Ω 1 10 –40 Gate Trigger Current (Tj = t°C) × 100 (%) Gate Trigger Current (Tj = 25°C) Gate Voltage (V) 120 On-State Voltage (V) 102 Gate Trigger Voltage (Tj = t°C) × 100 (%) Gate Trigger Voltage (Tj = 25°C) 160 0 100 4.0 0 40 80 120 Junction Temperature (°C) R07DS0546EJ0100 Rev.1.00 Sep 22, 2011 160 Transient Thermal Impedance (°C/W) On-State Current (A) Tj = 25°C 102 4.5 103 104 100 101 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 10–1 102 Conduction Time (Cycles at 60Hz) Page 3 of 7 BCR16LM-16LB Preliminary Maximum On-State Power Dissipation 103 20 No Fins 102 101 100 10−1 101 102 103 104 On-State Power Dissipation (W) Transient Thermal Impedance (°C/W) Maximum Transient Thermal Impedance Characteristics (Junction to ambient) 4 360° Conduction Resistive, inductive loads 0 4 8 12 16 20 RMS On-State Current (A) Allowable Case Temperature vs. RMS On-State Current Allowable Ambient Temperature vs. RMS On-State Current 160 Ambient Temperature (°C) 120 100 80 60 40 360° Conduction 20 Resistive, inductive loads 0 0 4 8 12 16 20 All fins are black painted aluminum and greased 140 120 120 t2.3 120 100 100 t2.3 100 60 60 t2.3 80 60 Curves apply regardless of 40 conduction angle Resistive, 20 inductive loads Natural convection 0 0 4 8 12 16 20 RMS On-State Current (A) RMS On-State Current (A) Allowable Ambient Temperature vs. RMS On-State Current Repetitive Peak Off-State Current vs. Junction Temperature 160 Natural convection No Fins Curves apply regardless of conduction angle Resistive, inductive loads 140 120 100 80 60 40 20 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 RMS On-State Current (A) R07DS0546EJ0100 Rev.1.00 Sep 22, 2011 Repetitive Peak Off-State Current (Tj = t°C) × 100 (%) Repetitive Peak Off-State Current (Tj = 25°C) Case Temperature (°C) 8 Conduction Time (Cycles at 60Hz) Curves apply regardless of conduction angle 140 Ambient Temperature (°C) 12 0 105 160 0 16 106 Typical Example 105 104 103 102 –40 0 40 80 120 160 Junction Temperature (°C) Page 4 of 7 BCR16LM-16LB Preliminary Latching Current vs. Junction Temperature 103 103 Typical Example Latching Current (mA) 102 0 40 80 120 101 T2–, G– Typical Example T2+, G+ Typical Example 0 40 80 120 160 Junction Temperature (°C) Junction Temperature (°C) Breakover Voltage vs. Junction Temperature Breakover Voltage vs. Rate of Rise of Off-State Voltage (Tj=125°C) 160 Typical Example 140 120 100 80 60 40 20 0 –40 T2+, G– Typical Example 102 100 –40 160 0 40 80 120 160 Breakover Voltage (dv/dt = xV/μs) × 100 (%) Breakover Voltage (dv/dt = 1V/μs) 101 –40 Distribution 160 140 Typical Example Tj = 125°C 120 III Quadrant 100 80 I Quadrant 60 40 20 0 101 102 103 104 Junction Temperature (°C) Rate of Rise of Off-State Voltage (V/μs) Breakover Voltage vs. Rate of Rise of Off-State Voltage (Tj=150°C) Commutation Characteristics (Tj=125°C) 102 160 Typical Example Tj = 150°C 140 120 III Quadrant 100 80 I Quadrant 60 40 20 0 101 102 103 104 Rate of Rise of Off-State Voltage (V/μs) R07DS0546EJ0100 Rev.1.00 Sep 22, 2011 Critical Rate of Rise of Off-State Commutating Voltage (V/μs) Breakover Voltage (dv/dt = xV/μs) × 100 (%) Breakover Voltage (dv/dt = 1V/μs) Breakover Voltage (Tj = t°C) × 100 (%) Breakover Voltage (Tj = 25°C) Holding Current (Tj = t°C) × 100 (%) Holding Current (Tj = 25°C) Holding Current vs. Junction Temperature Time Main Voltage (dv/dt)c VD Main Current (di/dt)c IT τ Time I Quadrant Minimum Value 101 III Quadrant Typical Example Tj = 125°C, IT = 4A τ = 500μs, VD = 200V, f = 3Hz 100 100 101 102 Rate of Decay of On-State Commutating Current (A/ms) Page 5 of 7 BCR16LM-16LB Preliminary Gate Trigger Current vs. Gate Current Pulse Width Critical Rate of Rise of Off-State Commutating Voltage (V/μs) 102 Time Main Voltage (dv/dt)c VD Main Current (di/dt)c IT τ Time Gate Trigger Current (tw) × 100 (%) Gate Trigger Current (DC) Commutation Characteristics (Tj=150°C) I Quadrant 101 Typical Example Tj = 150°C III Quadrant IT = 4A τ = 500μs VD = 200V Minimum f = 3Hz Value 100 100 101 102 Rate of Decay of On-State Commutating Current (A/ms) Typical Example IFGT I IRGT I IRGT III 102 101 100 101 102 Gate Current Pulse Width (μs) Gate Trigger Characteristics Test Circuits 6Ω 103 6Ω Recommended Circuit Values Around The Triac Load C1 A 6V R1 A 6V 330Ω V V 330Ω Test Procedure II Test Procedure I C0 R0 C1 = 0.1 to 0.47μF C0 = 0.1μF R1 = 47 to 100Ω R0 = 100Ω 6Ω A 6V V 330Ω Test Procedure III R07DS0546EJ0100 Rev.1.00 Sep 22, 2011 Page 6 of 7 BCR16LM-16LB Preliminary Package Dimensions Package Name TO-220FL JEITA Package Code ⎯ Previous Code TO-220FL RENESAS Code PRSS0003AF-A Unit: mm 6.5 ± 0.3 3.0 ± 0.3 2.8 ± 0.2 φ 3.2 ± 0.2 3.6 ± 0.3 12.5 ± 0.5 15.0 ± 0.3 10.0 ± 0.3 MASS[Typ.] 1.5g 1.15 ± 0.2 1.15 ± 0.2 0.75 ± 0.15 0.40 ± 0.15 4.5 ± 0.2 2.54 ± 0.25 2.6 ± 0.2 2.54 ± 0.25 Ordering Information Orderable Part Number Packing Quantity BCR16LM-16LB#B00 Tube 50 pcs. BCR16LM-16LB-A8#B00 Tube 50 pcs. Note : Please confirm the specification about the shipping in detail. R07DS0546EJ0100 Rev.1.00 Sep 22, 2011 Remark Straight type A8 Lead form Page 7 of 7 Notice 1. All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm the latest product information with a Renesas Electronics sales office. Also, please pay regular and careful attention to additional and different information to be disclosed by Renesas Electronics such as that disclosed through our website. 2. Renesas Electronics does not assume any liability for infringement of patents, copyrights, or other intellectual property rights of third parties by or arising from the use of Renesas Electronics products or technical information described in this document. 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