SeCoS BC847S Multi-chip transistor Datasheet

BC847S
NPN Silicon
Multi-Chip Transistor
Elektronische Bauelemente
RoHS Compliant Product
SOT-363
.055(1.40)
.047(1.20)
o
8
o
0
.026TYP
(0.65TYP)
.021REF
(0.525)REF
* Features
.053(1.35)
.045(1.15)
.096(2.45)
.085(2.15)
Power dissipation
PCM : 0.3 W (Tamp.= 25 C)
O
Collector current
ICM
.018(0.46)
.010(0.26)
: 0.2 A
.014(0.35)
.006(0.15)
Collector-base voltage
.006(0.15)
.003(0.08)
.087(2.20)
.079(2.00)
V(BR)CBO : 50 V
.004(0.10)
.000(0.00)
Operating & Storage junction Temperature
O
O
Tj, Tstg : -55 C~ +150 C
.043(1.10)
.035(0.90)
C1
B2
E2
E1
B1
C2
.039(1.00)
.035(0.90)
Dimensions in inches and (millimeters)
O
Electrical Characteristics( Tamb=25 C unless otherwise specified)
Parameter
Symbol
Test
conditions
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
V(BR)CBO
Ic=10µA, IE=0
50
V
Collector-emitter breakdown voltage
V(BR)CEO
Ic=10mA, IB=0
45
V
Emitter-base breakdown voltage
V(BR)EBO
IE=10µA, IC=0
6
V
Collector cut-off current
ICBO
VCB=30V, IE=0
DC current gain
hFE(1)
VCE=5V, IC=2mA
VCE(sat)
IC=10mA, IB=0.5mA
0.25
V
VCE(sat)(2)
IC=100mA, IB=5mA
0.65
V
VBE
VCE=5V, IC=2mA
0.7
V
VBE(2)
VCE=5V, IC=10mA
0.77
V
fT
VCE=5V, IC=20mA , f=100MHz
200
MHz
Cob
VCB=10V, IE=0, f=1MHz
2
pF
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
http://www.SeCoSGmbH.com
01-Jan-2006 Rev. B
15
110
nA
630
Any changing of specification will not be informed individual
Page 1 of 3
BC847S
NPN Silicon
Multi-Chip Transistor
Elektronische Bauelemente
1000
800
600
25 °C
400
- 40 °C
200
0
0.01 0.03
0.1 0.3
1
3
10
30
I C - COLLECTOR CURRENT (mA)
100
Base-Emitter Saturation
Voltage vs Collector Current
1
- 40 °C
0.8
0.6
25 °C
125 °C
0.4
β = 10
0.2
0.1
1
10
I C - COLLECTOR CURRENT (mA)
100
V CE - COLLECTOR VOLTAGE (V)
http://www.SeCoSGmbH.com
01-Jan-2006 Rev. B
10
7
175 MHz
5
3
2
1
0.1
150 MHz
125 MHz
100 MHz
75 MHz
1
10
I C - COLLECTOR CURRENT (mA)
0.3
0.25
100
β = 10
0.2
125 °C
0.15
25 °C
0.1
- 40 °C
0.05
0.1
1
10
I C - COLLECTOR CURRENT (mA)
100
Base-Emitter ON Voltage vs
Collector Current
1
- 40 °C
0.8
25 °C
0.6
125 °C
0.4
V CE = 5.0 V
0.2
0.1
°
Contours of Constant Gain
Bandwidth Product (f T )
VCESAT - COLLECTOR-EMITTER VOLTAGE (V)
V CE = 5.0 V
125 °C
VBEON- BASE-EMITTER ON VOLTAGE (V)
1200
Collector-Emitter Saturation
Voltage vs Collector Current
CHARAC TERIS TICS R ELATI VE TO VALUE AT T A = 25 C
Typical Pulsed Current Gain
vs Collector Current
VBESAT - COLLECTOR-EMITTER VOLTAGE (V)
h FE - TYPICAL PULSED CURRENT GAIN
Typical Characteristics
1
10
I C - COLLECTOR CURRENT (mA)
40
Normalized Collect or-Cutoff Current
vs Ambient Temperature
1000
100
10
1
25
50
75
100
125
T A - AMBIE NT TEMP ERATURE ( °C)
150
Any changing of specification will not be informed individual
Page 2 of 3
BC847S
NPN Silicon
Multi-chip Transistor
V CE - COLLECTOR VOLTAGE (V)
°
Contours of Constant Gain
Bandwidth Product (f T )
10
175 MHz
7
5
150 MHz
3
2
1
0.1
125 MHz
100 MHz
75 MHz
1
10
I C - COLLECTOR CURRENT (mA)
CHARAC TERIS TICS R ELATI VE TO VALUE AT T A = 25 C
Elektronische Bauelemente
100
Normalized Collect or-Cutoff Current
vs Ambient Temperature
1000
100
10
1
25
Noise Figure vs Frequency
5
V CE = 5.0 V
NF - NOISE FIGURE (dB)
NF - NOISE FIGURE (dB)
I C = 200 µA,
R S = 10 kΩ
I C = 100 µA,
R S = 10 kΩ
6
I C = 1.0 mA,
R S = 500 Ω
4
I C = 1.0 mA,
R S = 5.0 kΩ
2
V CE = 5.0V
0
0.0001
0.001
0.01
0.1
1
f - FREQUENCY (MHz)
150
Wideband Noise Frequency
vs Source Resistance
10
8
50
75
100
125
T A - AMBIE NT TEMP ERATURE ( °C)
10
100
4
BANDWIDTH = 15.7 kHz
I C = 100 µA
3
I C = 30 µA
2
1
0
1,000
I C = 10 µA
2,000
5,000
10,000
20,000
50,000
100,000
R S - SOURCE RESISTANCE (Ω )
P D - POWER DISSIPATION (mW)
Power Dissipation vs
Ambient Temperature
http://www.SeCoSGmbH.com
01-Jan-2006 Rev. B
500
400
SC70-6
300
200
100
0
0
25
50
75
100
TEMPERATURE (º C)
125
150
Any changing of specification will not be informed individual
Page 3 of 3
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