BC817, BC818 Small Signal Transistors (NPN) FEATURES SOT-23 ♦ NPN Silicon Epitaxial Planar Transistors .122 (3.1) .118 (3.0) .016 (0.4) ♦ Especially suited for automatic insertion .056 (1.43) .052 (1.33) 3 in thick- and thin-film circuits. ♦ These transistors are subdivided into three groups -16, 2 .016 (0.4) -25 and -40 according to their current gain. .045 (1.15) .037 (0.95) .007 (0.175) .005 (0.125) .037(0.95) .037(0.95) max. .004 (0.1) 1 for switching, AF driver and amplifier applications. Top View ♦ As complementary types, the PNP transistors BC807 and BC808 are recommended. MECHANICAL DATA .102 (2.6) .094 (2.4) .016 (0.4) Case: SOT-23 Plastic Package Weight: approx. 0.008 g Marking code Dimensions in inches and (millimeters) Pin configuration 1 = Base, 2 = Emitter, 3 = Collector. Type BC817-16 -25 -40 BC818-16 -25 -40 Marking 6A 6B 6C 6E 6F 6G MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 °C ambient temperature unless otherwise specified Symbol Value Unit Collector-Emitter Voltage BC817 BC818 VCES VCES 50 30 V V Collector-Emitter Voltage BC817 BC818 VCEO VCEO 45 25 V V Emitter-Base Voltage VEBO 5 V Collector Current IC 800 mA Peak Collector Current I CM 1000 mA Peak Base Current IBM 200 mA Peak Emitter Current –IEM 1000 mA Power Dissipation at TSB = 50 °C Ptot 3101) mW Junction Temperature Tj 150 °C Storage Temperature Range TS – 65 to +150 °C 1) 4/98 Device on fiberglass substrate, see layout BC817 THRU BC818 ELECTRICAL CHARACTERISTICS Ratings at 25 °C ambient temperature unless otherwise specified Symbol Min. Typ. Max. Unit hFE hFE hFE hFE hFE hFE 100 160 250 60 100 170 – – – – – – 250 400 600 – – – – – – – – – Thermal Resistance Junction Substrate Backside RthSB – – 3201) K/W Thermal Resistance Junction to Ambient Air RthJA – – 4501) K/W Collector Saturation Voltage at IC = 500 mA, IB = 50 mA VCEsat – – 0.7 V Base-Emitter Voltage at VCE = 1 V, IC = 300 mA VBE – – 1.2 V ICES ICES ICES – – – – – – 100 100 5 nA nA µA Emitter-Base Cutoff Current at VEB = 4 V IEBO – – 100 nA Gain-Bandwidth Product at VCE = 5 V, IC = 10 mA, f = 50 MHz fT – 100 – MHz Collector-Base Capacitance at VCB = 10 V, f = 1 MHz CCBO – 12 DC Current Gain at VCE = 1 V, IC = 100 mA Current Gain Group-16 -25 -40 -16 at VCE = 1 V, IC = 300 mA -25 -40 Collector-Emitter Cutoff Current at VCE = 45 V at VCE = 25 V at VCE = 25 V, Tj = 150 °C 1) BC817 BC818 Device on fiberglass substrate, see layout .30 (7.5) .12 (3) .04 (1) .08 (2) .04 (1) .08 (2) .59 (15) .03 (0.8) .47 (12) 0.2 (5) .06 (1.5) Dimensions in inches (millimeters) .20 (5.1) Layout for RthJA test Thickness: Fiberglass 0.059 in (1.5 mm) Copper leads 0.012 in (0.3 mm) pF RATINGS AND CHARACTERISTIC CURVES BC817, BC818 RATINGS AND CHARACTERISTIC CURVES BC817, BC818 RATINGS AND CHARACTERISTIC CURVES BC817, BC818