CA3086 General Purpose NPN Transistor Array November 1996 Applications Description • Three Isolated Transistors and One Differentially Connected Transistor Pair For Low-Power Applications from DC to 120MHz The CA3086 consists of five general-purpose silicon NPN transistors on a common monolithic substrate. Two of the transistors are internally connected to form a differentially connected pair. • General-Purpose Use in Signal Processing Systems Operating in the DC to 190MHz Range • Temperature Compensated Amplifiers • See Application Note, AN5296 “Application of the CA3018 Integrated-Circuit Transistor Array” for Suggested Applications Ordering Information PART NUMBER (BRAND) TEMP. RANGE (oC) PACKAGE The transistors of the CA3086 are well suited to a wide variety of applications in low-power systems at frequencies from DC to 120MHz. They may be used as discrete transistors in conventional circuits. However, they also provide the very significant inherent advantages unique to integrated circuits, such as compactness, ease of physical handling and thermal matching PKG. NO. CA3086 -55 to 125 14 Ld PDIP E14.3 CA3086M (3086) -55 to 125 14 Ld SOIC M14.15 CA3086M96 (3086) -55 to 125 14 Ld SOIC Tape and Reel M14.15 CA3086F -55 to 125 14 Ld CERDIP F14.3 Pinout CA3086 (PDIP, CERDIP, SOIC) TOP VIEW 1 14 Q5 2 13 SUBSTRATE Q1 3 12 Q2 4 11 Q4 5 10 6 9 Q3 7 8 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999 5-27 File Number 483.3 CA3086 Absolute Maximum Ratings Thermal Information The following ratings apply for each transistor in the device: Collector-to-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . 15V Collector-to-Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . 20V Collector-to-Substrate Voltage, VCIO (Note 1) . . . . . . . . . . . . 20V Emitter-to-Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . 5V Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA Thermal Resistance (Typical, Note 2) θJA (oC/W) θJC (oC/W) CERDIP Package . . . . . . . . . . . . . . . . 150 75 PDIP Package . . . . . . . . . . . . . . . . . . . 180 N/A SOIC Package . . . . . . . . . . . . . . . . . . . 220 N/A Maximum Power Dissipation (Any one transistor). . . . . . . . . 300mW Maximum Junction Temperature (Hermetic Packages) . . . . . . . 175oC Maximum Junction Temperature (Plastic Package) . . . . . . . . 150oC Maximum Storage Temperature Range . . . . . . . . . -65oC to 150oC Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . 300oC (SOIC - Lead Tips Only) Operating Conditions Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . -55oC to 125oC CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTES: 1. The collector of each transistor in the CA3086 is isolated from the substrate by an integral diode. The substrate (Terminal 13) must be connected to the most negative point in the external circuit to maintain isolation between transistors and to provide for normal transistor action. To avoid undesirable coupling between transistors, the substrate (Terminal 13) should be maintained at either DC or signal (AC) ground. A suitable bypass capacitor can be used to establish a signal ground. 2. θJA is measured with the component mounted on an evaluation PC board in free air. TA = 25oC, For Equipment Design Electrical Specifications PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Collector-to-Base Breakdown Voltage V(BR)CBO lC = 10µA, IE = 0 20 60 - V Collector-to-Emitter Breakdown Voltage V(BR)CEO IC = 1mA, IB = 0 15 24 - V Collector-to-Substrate Breakdown Voltage V(BR)ClO IC = 10µA, ICI = 0 20 60 - V Emitter-to-Base Breakdown Voltage V(BR)EBO IE = 10µA, IC = 0 5 7 - V Collector-Cutoff Current (Figure 1) ICBO VCB = 10V, IE = 0, - 0.002 100 nA Collector-Cutoff Current (Figure 2) ICEO VCE = 10V, IB = 0, - (Figure 2) 5 µA DC Forward-Current Transfer Ratio (Figure 3) hFE VCE = 3V, IC = 1mA 40 100 - Electrical Specifications TA = 25oC, Typical Values Intended Only for Design Guidance PARAMETER DC Forward-Current Transfer Ratio (Figure 3) Base-to-Emitter Voltage (Figure 4) SYMBOL hFE VBE TEST CONDITIONS VCE = 3V VCE = 3V TYPICAL VALUES UNITS IC = 10mA 100 IC = 10µA 54 IE = 1 mA 0.715 V IE = 10mA 0.800 V VBE Temperature Coefficient (Figure 5) ∆VBE/∆T VCE = 3V, lC = 1 mA -1.9 mV/oC Collector-to-Emitter Saturation Voltage VCE SAT IB = 1mA, IC = 10mA 0.23 V f = 1kHz, VCE = 3V, IC = 100µA, RS = 1kΩ 3.25 dB Noise Figure (Low Frequency) NF 5-28 CA3086 Electrical Specifications TA = 25oC, Typical Values Intended Only for Design Guidance (Continued) PARAMETER SYMBOL Low-Frequency, Small-Signal EquivalentCircuit Characteristics: TEST CONDITIONS TYPICAL VALUES UNITS f = 1kHz,VCE = 3V, IC = 1mA Forward Current-Transfer Ratio (Figure 6) hFE 100 - Short-Circuit Input Impedance (Figure 6) hIE 3.5 kΩ Open-Circuit Output Impedance (Figure 6) hOE 15.6 µS Open-Circuit Reverse-Voltage Transfer Ratio (Figure 6) hRE 1.8 X 10-4 - Admittance Characteristics: f = 1MHz,VCE = 3V, lC = 1mA Forward Transfer Admittance (Figure 7) yFE 31 - j1.5 mS Input Admittance (Figure 8) yIE 0.3 + j0.04 mS Output Admittance (Figure 9) yOE 0.001 + j0.03 mS Reverse Transfer Admittance (Figure 10) yRE See Figure 10 - Gain-Bandwidth Product (Figure 11) fT VCE = 3V, IC = 3mA 550 MHz Emitter-to-Base Capacitance CEBO VEB = 3V, IE = 0 0.6 pF Collector-to-Base Capacitance CCBO VCB = 3V, IC = 0 0.58 pF Collector-to-Substrate Capacitance CClO VC l = 3V, IC = 0 2.8 pF Typical Performance Curves 103 IE = 0 COLLECTOR CUTOFF CURRENT (nA) COLLECTOR CUTOFF CURRENT (nA) 102 10 VCB = 15V VCB = 10V VCB = 5V 1 10-1 10-2 10-3 10-4 IB = 0 102 VCE = 10V 10 VCE = 5V 1 10-1 10-2 10-3 0 25 50 75 100 0 125 TEMPERATURE (oC) FIGURE 1. ICBO vs TEMPERATURE 25 50 75 TEMPERATURE (oC) 100 FIGURE 2. ICEO vs TEMPERATURE 5-29 125 CA3086 Typical Performance Curves (Continued) 0.8 VCE = 3V TA = 25oC 110 hFE BASE-TO-EMITTER VOLTAGE (V) STATIC FORWARD CURRENT TRANSFER RATIO (hFE) 120 100 90 80 70 60 0.1 1 0.7 VBE 0.6 0.5 0.4 0.01 50 0.01 VCE = 3V TA = 25oC 10 0.1 1.0 EMITTER CURRENT (mA) EMITTER CURRENT (mA) FIGURE 3. hFE vs IE FIGURE 4. VBE vs IE 100 NORMALIZED h PARAMETERS BASE-TO-EMITTER VOLTAGE (V) VCB = 3V 0.9 0.8 0.7 IE = 3mA 0.6 IE = 1mA IE = 0.5mA 0.5 VCE = 3V f = 1kHz TA = 25oC hFE = 100 hIE = 3.5kΩ hRE = 1.88 x 10-4 hOE = 15.6µS hIE 10 hOE AT 1mA hRE hFE 1.0 hRE hIE 0.4 -75 -50 -25 0 25 50 75 100 0.1 0.01 125 0.1 1.0 COLLECTOR CURRENT (mA) TEMPERATURE (oC) FIGURE 5. VBE vs TEMPERATURE 40 6 COMMON EMITTER CIRCUIT, BASE INPUT TA = 25oC, VCE = 3V, IC = 1mA 30 gFE 20 10 0 bFE -10 10 FIGURE 6. NORMALIZED hFE, hIE, hRE, hOE vs IC INPUT CONDUCTANCE (gIE) AND SUSCEPTANCE (bIE) (mS) FORWARD TRANSFER CONDUCTANCE (gFE) AND SUSCEPTANCE (bFE) (mS) 10 5 COMMON EMITTER CIRCUIT, BASE INPUT TA = 25oC, VCE = 3V, IC = 1mA 4 3 bIE 2 gIE 1 0 -20 0.1 1 10 FREQUENCY (MHz) 100 0.1 FIGURE 7. yFE vs FREQUENCY 1 10 FREQUENCY (MHz) FIGURE 8. yIE vs FREQUENCY 5-30 100 CA3086 Typical Performance Curves REVERSE TRANSFER CONDUCTANCE (gRE) AND SUSCEPTANCE (bRE) (mS) OUTPUT CONDUCTANCE (gOE) AND SUSCEPTANCE (bOE) (mS) 6 (Continued) COMMON EMITTER CIRCUIT, BASE INPUT TA = 25oC, VCE = 3V, IC = 1mA 5 4 bOE 3 2 1 gOE 0 0.1 1 10 FREQUENCY (MHz) COMMON EMITTER CIRCUIT, BASE INPUT TA = 25oC, VCE = 3V, IC = 1mA gRE IS SMALL AT FREQUENCIES LESS THAN 500MHz 0 bRE -0.5 -1.0 -1.5 -2.0 100 1 FIGURE 9. yOE vs FREQUENCY 10 FREQUENCY (MHz) 100 FIGURE 10. yRE vs FREQUENCY GAIN BANDWIDTH PRODUCT (MHz) VCE = 3V TA = 25oC 1000 900 800 700 600 500 400 300 200 100 0 0 1 2 3 4 5 6 7 8 9 10 COLLECTOR CURRENT (mA) FIGURE 11. fT vs IC All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. 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