Diodes SMD Type PIN Diodes BAP64-04/05/06-HF (KAP64-04/05/06-HF) SOT-23-3 Unit: mm ■ Features 0.4 +0.2 2.9 -0.1 +0.1 0.4 -0.1 3 1 0.55 ● Low diode capacitance +0.2 1.6 -0.1 +0.2 2.8 -0.1 ● High voltage, current controlled ● RF resistor for RF attenuators and switches 2 +0.02 0.15 -0.02 +0.1 0.95 -0.1 +0.1 1.9 -0.2 ● Low diode forward resistance +0.2 -0.1 ● Low series inductance 0-0.1 ● Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish +0.1 0.68 -0.1 1.1 ● For applications up to 3 GHz. BAP64-05-HF BAP64-04-HF BAP64-06-HF ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit VR 175 V Continuous Forward Current IF 100 mA Power Dissipation @ Ts = 90 °C PD 250 mW RθJA 500 ℃/W Continuous Reverse Voltage Thermal Resistance from Junction to Ambient Junction Temperature Storage Temperature range TJ 150 Tstg -65 to 150 ℃ www.kexin.com.cn 1 Diodes SMD Type PIN Diodes BAP64-04/05/06-HF (KAP64-04/05/06-HF) ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Forward voltage VF Reverse voltage leakage current IR Diode forward resistance (Note.1) rD Test Conditions Max Unit IF= 50 mA 1.1 V VR=175V 10 VR=20 V 1 Cd Series inductance LS Charge carrier life time TL Typ IF = 0.5 mA , f = 100 MHz 40 IF = 1 mA , f = 100 MHz 20 IF = 10 mA , f = 100 MHz 3.8 IF = 100 mA , f = 100 MHz 1.35 VR= 0 V, f= 1 MHz Diode capacitance Min VR= 1 V, f= 1 MHz 0.5 nH when switched from IF = 10 mA to IR = 6mA; RL = 100 Ω; measured at IR = 3 mA 1.55 us 2 BAP64-04-HF BAP64-05-HF BAP64-06-HF www.kexin.com.cn 5K F 6K F 0.35 IF=10mA, f=100MHz ■ Marking 4K F pF 1.4 Note.1: Guaranteed on AQL basis: inspection level S4, AQL 1.0. Marking Ω 0.52 VR= 20 V, f= 1 MHz NO uA Diodes SMD Type PIN Diodes BAP64-04/05/06-HF (KAP64-04/05/06-HF) ■ Typical Characterisitics Forward Characteristics (nA) REVERSE CURRENT IR T= a 2 5℃ T= a 1 00 ℃ IF FORWARD CURRENT 10 1 0.1 0.2 0.4 0.6 0.8 FORWARD VOLTAGE 1.0 VF 100 Characteristics Ta=100℃ 10 Ta=25℃ 1 0.1 1.2 0 35 (V) 70 105 REVERSE VOLTAGE Capacitance Characteristics Per Diode 0.5 Reverse 1000 (mA) 100 140 VR 175 (V) Power Derating Curve 300 Ta=25℃ f=1MHz 250 PD 0.3 POWER DISSIPATION JUNCTION CAPACITANCE CJ (pF) (W) 0.4 0.2 0.1 0.0 200 150 100 50 0 2 4 6 8 10 12 REVERSE VOLTAGE 14 VR (V) 16 18 20 0 0 25 50 75 100 AMBIENT TEMPERATURE Ta 125 150 (℃) www.kexin.com.cn 3