ATMEL AT49BV1614A 16-megabit 1m x 16/2m x 8 3-volt only flash memory Datasheet

Features
• Single Voltage Read/Write Operation: 2.65V to 3.3V (BV), 3.0V to 3.6V (LV)
• Access Time – 70 ns
• Sector Erase Architecture
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•
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– Thirty-one 32K Word (64K Bytes) Sectors with Individual Write Lockout
– Eight 4K Word (8K Bytes) Sectors with Individual Write Lockout
Fast Word Program Time – 20 µs
Fast Sector Erase Time – 300 ms
Dual-plane Organization, Permitting Concurrent Read while Program/Erase
Memory Plane A: Eight 4K Word and Seven 32K Word Sectors
Memory Plane B: Twenty-four 32K Word Sectors
Erase Suspend Capability
– Supports Reading/Programming Data from Any Sector by Suspending Erase of
Any Different Sector
Low-power Operation
– 30 mA Active
– 10 µA Standby
Data Polling, Toggle Bit, Ready/Busy for End of Program Detection
VPP Pin for Accelerated Program/Erase Operations
RESET Input for Device Initialization
Sector Lockdown Support
TSOP and CBGA Package Options
Top or Bottom Boot Block Configuration Available
128-bit Protection Register
Description
The AT49BV/LV16X4A(T) is a 2.65- to 3.3-volt 16-megabit Flash memory organized
as 1,048,576 words of 16 bits each or 2,097,152 bytes of 8 bits each. The x16 data
appears on I/O0 - I/O15; the x8 data appears on I/O0 - I/O7. The memory is divided
into 39 sectors for erase operations. The device is offered in 48-lead TSOP and
48-ball CBGA packages. The device has CE and OE control signals to avoid any bus
contention. This device can be read or reprogrammed using a single 2.65V power
supply, making it ideally suited for in-system programming.
16-megabit
(1M x 16/2M x 8)
3-volt Only
Flash Memory
AT49BV1604A
AT49BV1604AT
AT49BV1614A
AT49LV1614A
AT49BV1614AT
AT49LV1614AT
Pin Configurations
Pin Name
Function
A0 - A19
Addresses
CE
Chip Enable
OE
Output Enable
WE
Write Enable
RESET
Reset
RDY/BUSY
READY/BUSY Output
VPP
Power Supply for Accelerated Program/Erase Operations
I/O0 - I/O14
Data Inputs/Outputs
I/O15 (A-1)
I/O15 (Data Input/Output, Word Mode) A-1 (LSB Address Input, Byte Mode)
BYTE
Selects Byte or Word Mode
NC
No Connect
VCCQ
Output Power Supply
Rev. 1411F–FLASH–03/02
1
TSOP Top View
CBGA Top View (Ball Down)
A15
A14
A13
A12
A11
A10
A9
A8
NC
NC
WE
RESET
VPP
NC
A19
A18
A17
A7
A6
A5
A4
A3
A2
A1
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
A16
VCCQ
GND
I/O15
I/O7
I/O14
I/O6
I/O13
I/O5
I/O12
I/O4
VCC
I/O11
I/O3
I/O10
I/O2
I/O9
I/O1
I/O8
I/O0
OE
GND
CE
A0
Note:
2
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
7
8
A19
A7
A4
A17
A5
A2
A6
A3
A1
I/O2
I/O8
CE
A0
I/O12
I/O3
I/O9
I/O0
GND
I/O4
VCC
I/O10
I/O1
OE
2
3
4
A13
A11
A8
VPP
A14
A10
WE
RST
A15
A12
A9
A16
I/O14
I/O5
I/O11
VCCQ I/O15
I/O6
I/O7
I/O13
5
A
AT49BV1604A(T)
B
A18
C
D
E
F
GND
TSOP Top View
Type 1
A15
A14
A13
A12
A11
A10
A9
A8
A19
NC
WE
RESET
VPP*
NC*
RDY/BUSY
A18
A17
A7
A6
A5
A4
A3
A2
A1
6
1
CBGA Top View
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
A16
BYTE
GND
I/O15/A-1
I/O7
I/O14
I/O6
I/O13
I/O5
I/O12
I/O4
VCC
I/O11
I/O3
I/O10
I/O2
I/O9
I/O1
I/O8
I/O0
OE
GND
CE
A0
1
2
A3
3
4
5
6
A7 RDY/BUSY WE
A9
A13
A4
A17
NC*
RESET
A8
A12
A2
A6
A18
VPP*
A10
A14
A1
A5
NC
A19
A11
A15
A0
I/O0
I/O2
I/O5
I/O7
A16
CE
I/O8
I/O10
I/O12
I/O14
BYTE
OE
I/O9
I/O11
VCC
I/O13 I/O15/A-1
VSS
I/O1
I/O3
I/O4
I/O6
A
B
C
AT49BV/LV1614A(T)
D
E
F
G
H
VSS
*For the AT49BV/LV1614A(T), either pin 13 or pin 14 (TSOP package) or ball B3 or ball C4 (CBGA package) can be connected
to VPP or both pins can be unconnected. Accelerated program/erase operations are only achieved if a voltage of 5V ± 0.5 V or
12V ± 0.5V is applied to pin 13 (TSOP package) or ball C4 (CBGA package).
AT49BV1604A(T)/1614A(T)
1411F–FLASH–03/02
AT49BV1604A(T)/1614A(T)
The device powers on in the read mode. Command sequences are used to place the device in
other operation modes such as program and erase. The device has the capability to protect
the data in any sector (see Sector Lockdown section).
The device is segmented into two memory planes. Reads from memory plane B may be performed even while program or erase functions are being executed in memory plane A and vice
versa. This operation allows improved system performance by not requiring the system to wait
for a program or erase operation to complete before a read is performed. To further increase
the flexibility of the device, it contains an Erase Suspend feature. This feature will put the
erase on hold for any amount of time and let the user read data from or program data to any of
the remaining sectors within the same memory plane. There is no reason to suspend the
erase operation if the data to be read is in the other memory plane. The end of a program or
an erase cycle is detected by the Ready/Busy pin, Data Polling or by the toggle bit.
The VPP pin provides faster program/erase times. With VPP at 5.0V or 12.0V, the program and
erase operations are accelerated.
A six-byte command (Enter Single Pulse Program Mode) sequence to remove the requirement
of entering the three-byte program sequence is offered to further improve programming time.
After entering the six-byte code, only single pulses on the write control lines are required for
writing into the device. This mode (Single Pulse Byte/Word Program) is exited by powering
down the device, or by pulsing the RESET pin low for a minimum of 500 ns and then bringing
it back to VCC. Erase and Erase Suspend/Resume commands will not work while in this mode;
if entered they will result in data being programmed into the device. It is not recommended that
the six-byte code reside in the software of the final product but only exist in external programming code.
When using the AT49BV1604A(T) pinout configuration, the device always operates in the
word mode. In the AT49BV/LV1614A(T) configuration, the BYTE pin controls whether the
device data I/O pins operate in the byte or word configuration. If the BYTE pin is set at logic
“1”, the device is in word configuration, I/O0 - I/O15 are active and controlled by CE and OE.
If the BYTE pin is set at logic “0”, the device is in byte configuration, and only data I/O pins
I/O0 - I/O7 are active and controlled by CE and OE. The data I/O pins I/O8 - I/O14 are tristated, and the I/O15 pin is used as an input for the LSB (A-1) address function.
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1411F–FLASH–03/02
Block Diagram
I/O0 - I/O15/A-1
INPUT
BUFFER
INPUT
BUFFER
IDENTIFIER
REGISTER
STATUS
REGISTER
DATA
REGISTER
A0 - A19
OUTPUT
MULTIPLEXER
OUTPUT
BUFFER
CE
WE
OE
RESET
BYTE
COMMAND
REGISTER
ADDRESS
LATCH
DATA
COMPARATOR
Y-DECODER
Y-GATING
RDY/BUSY
WRITE STATE
MACHINE
PROGRAM/ERASE
VOLTAGE SWITCH
VPP
VCC
GND
X-DECODER
PLANE B
SECTORS
PLANE A SECTORS
4
AT49BV1604A(T)/1614A(T)
1411F–FLASH–03/02
AT49BV1604A(T)/1614A(T)
Device
Operation
READ: The AT49BV/LV16X4A(T) is accessed like an EPROM. When CE and OE are low and
WE is high, the data stored at the memory location determined by the address pins are
asserted on the outputs. The outputs are put in the high-impedance state whenever CE or OE
is high. This dual-line control gives designers flexibility in preventing bus contention.
COMMAND SEQUENCES: When the device is first powered on it will be reset to the read or
standby mode, depending upon the state of the control line inputs. In order to perform other
device functions, a series of command sequences are entered into the device. The command
sequences are shown in the Command Definitions table (I/O8 - I/O15 are don’t care inputs for
the command codes). The command sequences are written by applying a low pulse on the
WE or CE input with CE or WE low (respectively) and OE high. The address is latched on the
falling edge of CE or WE, whichever occurs last. The data is latched by the first rising edge of
CE or WE. Standard microprocessor write timings are used. The address locations used in the
command sequences are not affected by entering the command sequences.
RESET: A RESET input pin is provided to ease some system applications. When RESET is at
a logic high level, the device is in its standard operating mode. A low level on the RESET input
halts the present device operation and puts the outputs of the device in a high-impedance
state. When a high level is reasserted on the RESET pin, the device returns to the read or
standby mode, depending upon the state of the control inputs.
ERASURE: Before a byte/word can be reprogrammed, it must be erased. The erased state of
memory bits is a logical “1”. The entire device can be erased by using the Chip Erase command or individual sectors can be erased by using the Sector Erase command.
CHIP ERASE: The entire device can be erased at one time by using the six-byte chip erase
software code. After the chip erase has been initiated, the device will internally time the erase
operation so that no external clocks are required. The maximum time to erase the chip is tEC.
If the sector lockdown has been enabled, the chip erase will not erase the data in the sector
that has been locked out; it will erase only the unprotected sectors. After the chip erase, the
device will return to the read or standby mode.
SECTOR ERASE: As an alternative to a full chip erase, the device is organized into 39 sectors (SA0 - SA38) that can be individually erased. The Sector Erase command is a six-bus
cycle operation. The sector address is latched on the falling WE edge of the sixth cycle while
the 30H data input command is latched on the rising edge of WE. The sector erase starts after
the rising edge of WE of the sixth cycle. The erase operation is internally controlled; it will
automatically time to completion. The maximum time to erase a section is tSEC. When the sector programming lockdown feature is not enabled, the sector will erase (from the same Sector
Erase command). An attempt to erase a sector that has been protected will result in the operation terminating in 2 µs.
BYTE/WORD PROGRAMMING: Once a memory block is erased, it is programmed (to a logical “0”) on a byte-by-byte or on a word-by-word basis. Programming is accomplished via the
internal device command register and is a four-bus cycle operation. The device will automatically generate the required internal program pulses.
Any commands written to the chip during the embedded programming cycle will be ignored. If
a hardware reset happens during programming, the data at the location being programmed
will be corrupted. Please note that a data “0” cannot be programmed back to a “1”; only erase
operations can convert “0”s to “1”s. Programming is completed after the specified tBP cycle
time. The Data Polling feature or the Toggle Bit feature may be used to indicate the end of a
program cycle.
VPP PIN: The circuitry of the AT49BV/LV16X4A(T) is designed so that the device can be programmed or erased from the VCC power supply or from the VPP input pin. When VPP is less
than or equal to the VCC pin, the device selects the V CC supply for programming and erase
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1411F–FLASH–03/02
operations. When the VPP pin is greater than the V CC supply, the device will select the V PP
input as the power supply for programming and erase operations. The device will allow for
some variations between the VPP input and the VCC power supply in its selection of VCC or VPP
for program or erase operations. If the VPP pin is within 0.3V of VCC for 2.65V < VCC < 3.3V,
then the program or erase operations will use VCC and disregard the VPP input signal. When
the VPP signal is used to accelerate program and erase operations, the VPP must be in the 5V
± 0.5V or 12V ± 0.5V range to ensure proper operation. The Vpp pin can be left unconnected.
SECTOR LOCKDOWN: Each sector has a programming lockdown feature. This feature prevents programming of data in the designated sectors once the feature has been enabled.
These sectors can contain secure code that is used to bring up the system. Enabling the lockdown feature will allow the boot code to stay in the device while data in the rest of the device is
updated. This feature does not have to be activated; any sector’s usage as a write protected
region is optional to the user.
At power-up or reset all sectors are unlocked. To activate the lockdown for a specific sector,
the six-bus cycle Sector Lockdown command must be issued. Once a sector has been locked
down, the contents of the sector is read-only and cannot be erased or programmed.
SECTOR LOCKDOWN DETECTION: A software method is available to determine if programming of a sector is locked down. When the device is in the software product identification
mode (see Software Product Identification Entry and Exit sections) a read from address location 00002H within a sector will show if programming the sector is locked down. If the data on
I/O0 is low, the sector can be programmed; if the data on I/O0 is high, the program lockdown
feature has been enabled and the sector cannot be programmed. The software product identification exit code should be used to return to standard operation.
SECTOR LOCKDOWN OVERRIDE: The only way to unlock a sector that is locked down is
through reset or power-up cycles. After power-up or reset, the content of a sector that is
locked down can be erased and reprogrammed.
ERASE SUSPEND/ERASE RESUME: The Erase Suspend command allows the system to
interrupt a sector erase operation and then program or read data from a different sector within
the same plane. Since this device has a dual-plane architecture, there is no need to use the
Erase Suspend feature while erasing a sector when you want to read data from a sector in the
other plane. After the Erase Suspend command is given, the device requires a maximum time
of 15 µs to suspend the erase operation. After the erase operation has been suspended, the
plane that contains the suspended sector enters the erase-suspend-read mode. The system
can then read data or program data to any other sector within the device. An address is not
required during the Erase Suspend command. During a sector erase suspend, another sector
cannot be erased. To resume the sector erase operation, the system must write the Erase
Resume command. The Erase Resume command is a one-bus cycle command, which does
require the plane address (determined by A18 and A19). The device also supports an erase
suspend during a complete chip erase. While the chip erase is suspended, the user can read
from any sector within the memory that is protected. The command sequence for a chip erase
suspend and a sector erase suspend are the same.
PRODUCT IDENTIFICATION: The product identification mode identifies the device and manufacturer as Atmel. It may be accessed by hardware or software operation. The hardware
operation mode can be used by an external programmer to identify the correct programming
algorithm for the Atmel product.
For details, see “Operating Modes” on page 12 (for hardware operation) or “Software Product
Identification Entry/Exit” on page 20. The manufacturer and device codes are the same for
both modes.
6
AT49BV1604A(T)/1614A(T)
1411F–FLASH–03/02
AT49BV1604A(T)/1614A(T)
128-BIT PROTECTION REGISTER: The AT49BV/LV16X4A(T) contains a 128-bit register that
can be used for security purposes in system design. The protection register is divided into two
64-bit blocks. The two blocks are designated as block A and block B. The data in block A is
non-changeable and is programmed at the factory with a unique number. The data in block B
is programmed by the user and can be locked out such that data in the block cannot be reprogrammed. To program block B in the protection register, the four-bus cycle Program
Protection Register command must be used as shown in the Command Definition table on
page 8. To lock out block B, the four-bus cycle Lock Protection Register command must be
used as shown in the Command Definition table. Data bit D1 must be zero during the fourth
bus cycle. All other data bits during the fourth bus cycle are don’t cares. Please see the “Protection Register Addressing Table” on page 9 for the address locations in the protection
register. To read the protection register, the Product ID Entry command is given followed by a
normal read operation from an address within the protection register. After reading the protection register, the Product ID Exit command must be given prior to performing any other
operation.
DATA POLLING: The AT49BV/LV16X4A(T) features Data Polling to indicate the end of a program cycle. During a program cycle an attempted read of the last byte/word loaded will result
in the complement of the loaded data on I/O7. Once the program cycle has been completed,
true data is valid on all outputs and the next cycle may begin. During a chip or sector erase
operation, an attempt to read the device will give a “0” on I/O7. Once the program or erase
cycle has completed, true data will be read from the device. Data Polling may begin at any
time during the program cycle. Please see “Status Bit Table” on page 21 for more details.
TOGGLE BIT: In addition to Data Polling, the AT49BV/LV16X4A(T) provides another method
for determining the end of a program or erase cycle. During a program or erase operation,
successive attempts to read data from the same memory plane will result in I/O6 toggling
between one and zero. Once the program cycle has completed, I/O6 will stop toggling and
valid data will be read. Examining the toggle bit may begin at any time during a program cycle.
An additional toggle bit is available on I/O2, which can be used in conjunction with the toggle
bit that is available on I/O6. While a sector is erase suspended, a read or a program operation
from the suspended sector will result in the I/O2 bit toggling. Please see “Status Bit Table” on
page 21 for more details.
RDY/BUSY: For the AT49BV/LV1614A(T), an open-drain Ready/Busy output pin provides
another method of detecting the end of a program or erase operation. RDY/BUSY is actively
pulled low during the internal program and erase cycles and is released at the completion of
the cycle. The open-drain connection allows for OR-tying of several devices to the same
RDY/BUSY line.
HARDWARE DATA PROTECTION: The Hardware Data Protection feature protects against
inadvertent programs to the AT49BV/LV16X4A(T) in the following ways: (a) VCC sense: if VCC
is below 1.8V (typical), the program function is inhibited. (b) V CC power-on delay: once V CC
has reached the VCC sense level, the device will automatically time out 10 ms (typical) before
programming. (c) Program inhibit: holding any one of OE low, CE high or WE high inhibits program cycles. (d) Noise filter: pulses of less than 15 ns (typical) on the WE or CE inputs will not
initiate a program cycle.
INPUT LEVELS: While operating with a 2.65V to 3.3V power supply, the address inputs and
control inputs (OE, CE and WE) may be driven from 0 to 5.5V without adversely affecting the
operation of the device. The I/O lines can only be driven from 0 to VCC + 0.6V.
OUTPUT LEVELS: For the AT49BV1604A(T), output high levels (VOH) are equal to VCCQ 0.2V (not VCC). For 2.65V - 3.3V output levels, VCCQ must be tied to VCC. For 1.8V - 2.2V output levels, VCCQ must be regulated to 2.0V ± 10%, while VCC must be regulated to 2.65V - 3.0V
(for minimum power).
7
1411F–FLASH–03/02
Command Definition in Hex(1)
Command
Sequence
1st Bus
Cycle
Bus
Cycles
Addr
Data
Read
1
Addr
DOUT
Chip Erase
6
555
Sector Erase
6
2nd Bus
Cycle
3rd Bus
Cycle
4th Bus
Cycle
5th Bus
Cycle
6th Bus
Cycle
Addr
Data
Addr
Data
Addr
Data
Addr
Data
Addr
Data
AA
AAA (2)
55
555
80
555
AA
AAA
555
AA
AAA
55
555
80
555
AA
AAA
55
555
10
55
SA(3)(4)
30
Byte/Word Program
4
555
AA
AAA
55
555
A0
Addr
DIN
Enter Single Pulse
Program Mode
6
555
AA
AAA
55
555
80
555
AA
AAA
55
555
A0
Single Pulse
Byte/Word Program
1
Addr
DIN
Sector Lockdown
6
555
AA
AAA
55
555
80
555
AA
AAA
55
SA(3)(4)
60
Erase Suspend
1
XXX
B0
Erase Resume
1
PA(5)
30
Product ID Entry
3
555
AA
AAA
55
555
90
Product ID Exit(6)
3
555
AA
AAA
55
555
F0
Product ID Exit(6)
1
XXX
F0
Program Protection
Register
4
555
AA
AAA
55
555
C0
Addr
DIN
Lock Protection
Register - Block B
4
555
AA
AAA
55
555
C0
080
X0
Status of Block B
Protection
4
555
AA
AAA
55
555
90
80
DOUT(7)
Notes:
1. The DATA FORMAT shown for each bus cycle is as follows; I/O7 - I/O0 (Hex). In word operation I/O15 - I/O8 are Don’t Care.
The ADDRESS FORMAT shown for each bus cycle is as follows: A11 - A0 (Hex). Address A19 through A11 are Don’t Care
in the word mode. Address A19 through A11 and A-1 are Don’t Care in the byte mode.
2. Since A11 is a Don’t Care, AAA can be replaced with 2AA.
3. SA = sector address. Any byte/word address within a sector can be used to designate the sector address (see pages 10 and
11 for details).
4. Once a sector is in the lockdown mode, data in the protected sector cannot be changed unless the chip is reset or power
cycled.
5. PA is the plane address (A19-A18).
6. Either one of the Product ID Exit commands can be used.
7. If data bit D1 is “0”, block B is locked. If data bit D1 is “1”, block B can be reprogrammed.
Absolute Maximum Ratings*
Temperature under Bias ................................ -55°C to +125°C
Storage Temperature ..................................... -65°C to +150°C
All Input Voltages
(including NC Pins)
with Respect to Ground ...................................-0.6V to +6.25V
All Output Voltages
with Respect to Ground .............................-0.6V to VCC + 0.6V
*NOTICE:
Stresses beyond those listed under “Absolute
Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and
functional operation of the device at these or any
other conditions beyond those indicated in the
operational sections of this specification is not
implied. Exposure to absolute maximum rating
conditions for extended periods may affect device
reliability.
Voltage on OE and VPP
with Respect to Ground ...................................-0.6V to +13.0V
8
AT49BV1604A(T)/1614A(T)
1411F–FLASH–03/02
AT49BV1604A(T)/1614A(T)
Protection Register Addressing Table
Word
Use
Block
A7
A6
A5
A4
A3
A2
A1
A0
0
Factory
A
1
0
0
0
0
0
0
1
1
Factory
A
1
0
0
0
0
0
1
0
2
Factory
A
1
0
0
0
0
0
1
1
3
Factory
A
1
0
0
0
0
1
0
0
4
User
B
1
0
0
0
0
1
0
1
5
User
B
1
0
0
0
0
1
1
0
6
User
B
1
0
0
0
0
1
1
1
User
B
1
0
0
0
1
0
0
0
7
Note:
1. All address lines not specified in the above table must be 0 when accessing the protection register, i.e., A19 - A8 = 0.
9
1411F–FLASH–03/02
AT49BV/LV1604A/1614A – Sector Address Table
Plane
10
Sector
x8
x16
Size (Bytes/Words)
Address Range (A19 - A-1)
Address Range (A19 - A0)
A
SA0
8K/4K
000000 - 001FFF
00000 - 00FFF
A
SA1
8K/4K
002000 - 003FFF
01000 - 01FFF
A
SA2
8K/4K
004000 - 005FFF
02000 - 02FFF
A
SA3
8K/4K
006000 - 007FFF
03000 - 03FFF
A
SA4
8K/4K
008000 - 009FFF
04000 - 04FFF
A
SA5
8K/4K
00A000 - 00BFFF
05000 - 05FFF
A
SA6
8K/4K
00C000 - 00DFFF
06000 - 06FFF
A
SA7
8K/4K
00E000 - 00FFFF
07000 - 07FFF
A
SA8
64K/32K
010000 - 01FFFF
08000 - 0FFFF
A
SA9
64K/32K
020000 - 02FFFF
10000 - 17FFF
A
SA10
64K/32K
030000 - 03FFFF
18000 - 1FFFF
A
SA11
64K/32K
040000 - 04FFFF
20000 - 27FFF
A
SA12
64K/32K
050000 - 05FFFF
28000 - 2FFFF
A
SA13
64K/32K
060000 - 06FFFF
30000 - 37FFF
A
SA14
64K/32K
070000 - 07FFFF
38000 - 3FFFF
B
SA15
64K/32K
080000 - 08FFFF
40000 - 47FFF
B
SA16
64K/32K
090000 - 09FFFF
48000 - 4FFFF
B
SA17
64K/32K
0A0000 - 0AFFFF
50000 - 57FFF
B
SA18
64K/32K
0B0000 - 0BFFFF
58000 - 5FFFF
B
SA19
64K/32K
0C0000 - 0CFFFF
60000 - 67FFF
B
SA20
64K/32K
0D0000 - 0DFFFF
68000 - 6FFFF
B
SA21
64K/32K
0E0000 - 0EFFFF
70000 - 77FFF
B
SA22
64K/32K
0F0000 - 0FFFFF
78000 - 7FFFF
B
SA23
64K/32K
100000 - 10FFFF
80000 - 87FFF
B
SA24
64K/32K
110000 - 11FFFF
88000 - 8FFFF
B
SA25
64K/32K
120000 - 12FFFF
90000 - 97FFF
B
SA26
64K/32K
130000 - 13FFFF
98000 - 9FFFF
B
SA27
64K/32K
140000 - 14FFFF
A0000 - A7FFF
B
SA28
64K/32K
150000 - 15FFFF
A8000 - AFFFF
B
SA29
64K/32K
160000 - 16FFFF
B0000 - B7FFF
B
SA30
64K/32K
170000 - 1EFFFF
B8000 - F7FFF
B
SA31
64K/32K
180000 - 18FFFF
C0000 - C7FFF
B
SA32
64K/32K
190000 - 19FFFF
C8000 - CFFFF
B
SA33
64K/32K
1A0000 - 1AFFFF
D0000 - D7FFF
B
SA34
64K/32K
1B0000 - 1BFFFF
D8000 - DFFFF
B
SA35
64K/32K
1C0000 - 1CFFFF
E0000 - E7FFF
B
SA36
64K/32K
1D0000 - 1DFFFF
E8000 - EFFFF
B
SA37
64K/32K
1E0000 - 1EFFFF
F0000 - F7FFF
B
SA38
64K/32K
1F0000 - 1FFFFF
F8000 - FFFFF
AT49BV1604A(T)/1614A(T)
1411F–FLASH–03/02
AT49BV1604A(T)/1614A(T)
AT49BV/LV1604AT/1614AT – Sector Address Table
Plane
Sector
x8
x16
Size (Bytes/Words)
Address Range (A19 - A-1)
Address Range (A19 - A0)
B
SA0
64K/32K
000000 - 00FFFF
00000 - 07FFF
B
SA1
64K/32K
010000 - 01FFFF
08000 - 0FFFF
B
SA2
64K/32K
020000 - 02FFFF
10000 - 17FFF
B
SA3
64K/32K
030000 - 03FFFF
18000 - 1FFFF
B
SA4
64K/32K
040000 - 04FFFF
20000 - 27FFF
B
SA5
64K/32K
050000 - 05FFFF
28000 - 2FFFF
B
SA6
64K/32K
060000 - 06FFFF
30000 - 37FFF
B
SA7
64K/32K
070000 - 07FFFF
38000 - 3FFFF
B
SA8
64K/32K
080000 - 08FFFF
40000 - 47FFF
B
SA9
64K/32K
090000 - 09FFFF
48000 - 4FFFF
B
SA10
64K/32K
0A0000 - 0AFFFF
50000 - 57FFF
B
SA11
64K/32K
0B0000 - 0BFFFF
58000 - 5FFFF
B
SA12
64K/32K
0C0000 - 0CFFFF
60000 - 67FFF
B
SA13
64K/32K
0D0000 - 0DFFFF
68000 - 6FFFF
B
SA14
64K/32K
0E0000 - 0EFFFF
70000 - 77FFF
B
SA15
64K/32K
0F0000 - 0FFFFF
78000 - 7FFFF
B
SA16
64K/32K
100000 - 10FFFF
80000 - 87FFF
B
SA17
64K/32K
110000 - 11FFFF
88000 - 8FFFF
B
SA18
64K/32K
120000 - 12FFFF
90000 - 97FFF
B
SA19
64K/32K
130000 - 13FFFF
98000 - 9FFFF
B
SA20
64K/32K
140000 - 14FFFF
A0000 - A7FFF
B
SA21
64K/32K
150000 - 15FFFF
A8000 - AFFFF
B
SA22
64K/32K
160000 - 16FFFF
B0000 - B7FFF
B
SA23
64K/32K
170000 - 17FFFF
B8000 - BFFFF
A
SA24
64K/32K
180000 - 18FFFF
C0000 - C7FFF
A
SA25
64K/32K
190000 - 19FFFF
C8000 - CFFFF
A
SA26
64K/32K
1A0000 - 1AFFFF
D0000 - D7FFF
A
SA27
64K/32K
1B0000 - 1BFFFF
D8000 - DFFFF
A
SA28
64K/32K
1C0000 - 1CFFFF
E0000 - E7FFF
A
SA29
64K/32K
1D0000 - 1DFFFF
E8000 - EFFFF
A
SA30
64K/32K
1E0000 - 1EFFFF
F0000 - F7FFF
A
SA31
8K/4K
1F0000 - 1F1FFF
F8000 - F8FFF
A
SA32
8K/4K
1F2000 - 1F3FFF
F9000 - F9FFF
A
SA33
8K/4K
1F4000 - 1F5FFF
FA000 - FAFFF
A
SA34
8K/4K
1F6000 - 1F7FFF
FB000 - FBFFF
A
SA35
8K/4K
1F8000 - 1F9FFF
FC000 - FCFFF
A
SA36
8K/4K
1FA000 - 1FBFFF
FD000 - FDFFF
A
SA37
8K/4K
1FC000 - 1FDFFF
FE000 - FEFFF
A
SA38
8K/4K
1FE000 - 1FFFFF
FF000 - FFFFF
11
1411F–FLASH–03/02
DC and AC Operating Range
Operating Temperature (Case)
Ind.
VCC Power Supply
AT49BV/LV16X4A(T)-70
AT49BV/LV16X4A(T)-90
-40°C - 85°C
-40°C - 85°C
2.65V to 3.3V/3.0V to 3.6V
2.65V to 3.3V/3.0V to 3.6V
Operating Modes
Mode
CE
OE
WE
RESET
VPP
Ai
I/O
Read
VIL
VIL
VIH
VIH
X
Ai
DOUT
Program/Erase(2)
VIL
VIH
VIL
VIH
VPP(6)
Ai
DIN
Standby/Program Inhibit
VIH
X(1)
X
VIH
X
X
High-Z
X
X
VIH
VIH
X
X
VIL
X
VIH
X
Output Disable
X
VIH
X
VIH
X
Reset
X
X
X
VIL
X
VIL
VIL
VIH
VIH
Program Inhibit
High-Z
X
High-Z
Product Identification
Hardware
Software(5)
Notes:
12
VIH
A1 - A19 = V IL, A9 = V H(3), A0 = V IL
Manufacturer Code(4)
A1 - A19 = VIL, A9 = V H(3), A0 = V IH
Device Code(4)
A0 = VIL, A1 - A19 = VIL
Manufacturer Code(4)
A0 = VIH, A1 - A19 = VIL
Device Code(4)
1.
2.
3.
4.
X can be VIL or VIH.
Refer to AC programming waveforms on page 19.
VH = 12.0V ± 0.5V.
Manufacturer Code: 1FH (x8); 001FH (x16), Device Code: C0H (x8)-AT49BV/LV16X4A; 00C0H (x16)-AT49BV/LV16X4A;
C2H (x8)-AT49BV/LV16X4AT; 00C2H (x16)-AT49BV/LV16X4T.
5. See details under “Software Product Identification Entry/Exit” on page 20.
6. VPP can be left unconnected or 0V ≤ VPP ≤ 3.3V. For faster erase/program operations, VPP can be set to 5.0V ± 0.5V or
12V ± 0.5V.
AT49BV1604A(T)/1614A(T)
1411F–FLASH–03/02
AT49BV1604A(T)/1614A(T)
DC Characteristics
Symbol
Parameter
Condition
ILI
Input Load Current
ILO
Min
Max
Units
VIN = 0V to VCC
10
µA
Output Leakage Current
VI/O = 0V to VCC
10
µA
ISB1
VCC Standby Current CMOS
CE = VCC - 0.3V to V CC
10
µA
ISB2
VCC Standby Current TTL
CE = 2.0V to VCC
1
mA
ISB3
VCC Standby Current TTL
CE = 2.0V to VCC, VCC = 2.85V
10
µA
ICC (1)(2)
VCC Active Read Current
f = 5 MHz; IOUT = 0 mA, 3.3V ≤ V CC
30
mA
ICC1
VCC Programming Current (VPP = VCC )
45
mA
µA
VPP Input Load Current
VPP = 0V, VCC = 3.0V
10
IPP1
VPP = VCC = 3.0V
10
µA
ICC2
VCC Programming Current (VPP = 5.0V ± 0.5V)
40
mA
IPP2
VPP Programming Current (VPP = 5.0V ± 0.5V)
5
mA
ICC3
VCC Programming Current (VPP = 12.0V ± 0.5V)
40
mA
IPP3
VPP Programming Current (VPP = 12.0V ± 0.5V)
6
mA
VIL
Input Low Voltage
0.6
V
VIH
Input High Voltage
VOL1
Output Low Voltage
IOL = 2.1 mA
0.45
V
VOL2
Output Low Voltage
IOL = 1.0 mA
0.20
V
VOH1
Output High Voltage
2.0
IOH = -400 µA
VCCQ < 2.6V
VCCQ - 0.2 [AT49BV1604A(T)]
V
IOH = -400 µA
VCCQ ≥ 2.6V
2.4 [AT49BV1604A(T)]
V
2.4 [AT49BV/LV1614A(T)]
V
IOH = -400 µA
VOH2
Output High Voltage
IOH = -100 µA
VCCQ < 2.6V
VCCQ - 0.1 [AT49BV1604A(T)]
V
IOH = -100 µA
VCCQ ≥ 2.6V
2.5 [AT49BV1604A(T)]
V
2.5 [AT49BV/LV1614A(T)]
V
IOH = -100 µA
Note:
V
1. In the erase mode, ICC is 50 mA.
2. For 3.3V < VCC < 3.6V, ICC (max) = 35 mA.
13
1411F–FLASH–03/02
AC Read Characteristics
AT49BV/LV16X4A(T)-70
Symbol
Parameter
Min
Max
tACC
Address to Output Delay
tCE(1)
CE to Output Delay
tOE(2)
OE to Output Delay
0
35
tDF(3)(4)
CE or OE to Output Float
0
25
tOH
Output Hold from OE, CE or Address, whichever occurred first
0
tRO
RESET to Output Delay
AT49BV/LV16X4A(T)-90
Min
Max
Units
70
90
ns
70
90
ns
0
40
ns
0
25
ns
0
100
ns
100
ns
AC Read Waveforms(1)(2)(3)(4)
ADDRESS
ADDRESS VALID
CE
tCE
tOE
OE
tDF
tOH
tACC
tRO
RESET
OUTPUT
HIGH Z
OUTPUT
VALID
1. CE may be delayed up to tACC - tCE after the address transition without impact on tACC.
2. OE may be delayed up to tCE - tOE after the falling edge of CE without impact on tCE or by tACC - tOE after an address change
without impact on tACC.
3. tDF is specified from OE or CE, whichever occurs first (CL = 5 pF).
4. This parameter is characterized and is not 100% tested.
14
AT49BV1604A(T)/1614A(T)
1411F–FLASH–03/02
AT49BV1604A(T)/1614A(T)
Input Test Waveforms and Measurement Level
tR, tF < 5 ns
Output Test Load
Pin Capacitance
f = 1 MHz, T = 25°C(1)
Symbol
Typ
Max
Units
Conditions
CIN
4
6
pF
VIN = 0V
COUT
8
12
pF
VOUT = 0V
Note:
1. This parameter is characterized and is not 100% tested.
15
1411F–FLASH–03/02
AC Byte/Word Load Characteristics
Symbol
Parameter
Min
Max
Units
tAS, tOES
Address, OE Setup Time
0
ns
tAH
Address Hold Time
40
ns
tCS
Chip Select Setup Time
0
ns
tCH
Chip Select Hold Time
0
ns
tWP
Write Pulse Width (WE or CE)
40
ns
tDS
Data Setup Time
30
ns
tDH, tOEH
Data, OE Hold Time
0
ns
tWPH
Write Pulse Width High
30
ns
AC Byte/Word Load Waveforms
WE Controlled
CE Controlled
16
AT49BV1604A(T)/1614A(T)
1411F–FLASH–03/02
AT49BV1604A(T)/1614A(T)
Program Cycle Characteristics
Symbol
Parameter
Min
tBP
Byte/Word Programming Time (0V < VPP < 4.5V)
tBPVPP
Byte/Word Programming Time (VPP > 4.5V)
tAS
Address Setup Time
0
ns
tAH
Address Hold Time
40
ns
tDS
Data Setup Time
30
ns
tDH
Data Hold Time
0
ns
tWP
Write Pulse Width
40
ns
tWPH
Write Pulse Width High
30
ns
tWC
Write Cycle Time
70
ns
tSR/W
Latency between Read and Write Operations
tRP
Reset Pulse Width
tRH
Reset High Time before Read
tEC
Chip Erase Cycle Time (VPP < 4.5V)
tECVPP
Chip Erase Cycle Time (VPP > 4.5V)
tSEC
Sector Erase Cycle Time (VPP < 4.5V)
tEPS
Erase or Program Suspend Time
Typ
Max
Units
20
50
µs
10
25
µs
50
ns
500
ns
50
ns
300
12
seconds
6
seconds
400
ms
15
µs
Program Cycle Waveforms
PROGRAM CYCLE
OE
CE
tWP
tBP
tWPH
WE
t
tAS
A0 - A20
tAH
tDH
555
555
AAA
tWC
ADDRESS
SR/W
VALID
READ ADDRESS
tDS
tACC
DATA
AA
55
A0
INPUT DATA
OUTPUT
DATA
17
1411F–FLASH–03/02
Sector or Chip Erase Cycle Waveforms
OE (1)
CE
tWP
t EC
tWPH
WE
tSR/W
tAS
A0 - A20
tAH
555
Notes:
18
555
AAA
tWC
DATA
tDH
555
Note 2
AAA
ADDRESS
VALID
tDS
AA
55
80
AA
55
Note 3
WORD 0
WORD 1
WORD 2
WORD 3
WORD 4
WORD 5
OUTPUT
VALID
t ACC
1. OE must be high only when WE and CE are both low.
2. For chip erase, the address should be 555. For sector erase, the address depends on what sector is to be erased.
(See note 3 under Command Definitions.)
3. For chip erase, the data should be 10H, and for sector erase, the data should be 30H.
AT49BV1604A(T)/1614A(T)
1411F–FLASH–03/02
AT49BV1604A(T)/1614A(T)
Data Polling Characteristics(1)
Symbol
Parameter
tDH
Data Hold Time
tOEH
OE Hold Time
tOE
tWR
Notes:
OE to Output Delay
Min
Typ
Max
10
ns
10
ns
(2)
Write Recovery Time
1. These parameters are characterized and not 100% tested.
2. See tOE spec in “AC Read Characteristics” on page 14.
Units
ns
0
ns
Data Polling Waveforms
Toggle Bit Characteristics(1)
Symbol
Parameter
tDH
Data Hold Time
tOEH
OE Hold Time
tOE
OE to Output Delay
tOEHP
OE High Pulse
tWR
Notes:
Min
Max
Units
10
ns
10
ns
(2)
Write Recovery Time
1. These parameters are characterized and not 100% tested.
2. See tOE spec in “AC Read Characteristics” on page 14.
Typ
ns
50
ns
0
ns
Toggle Bit Waveforms(1)(2)(3)
Notes:
1. Toggling either OE or CE or both OE and CE will operate toggle bit.
The tOEHP specification must be met by the toggling input(s).
2. Beginning and ending state of I/O6 will vary.
3. Any address location may be used but the address should not vary.
19
1411F–FLASH–03/02
Software Product Identification Entry(1)
Sector Lockdown Enable Algorithm(1)
LOAD DATA AA
TO
ADDRESS 555
LOAD DATA AA
TO
ADDRESS 555
LOAD DATA 55
TO
ADDRESS AAA
LOAD DATA 55
TO
ADDRESS AAA
LOAD DATA 80
TO
ADDRESS 555
LOAD DATA 90
TO
ADDRESS 555
LOAD DATA AA
TO
ADDRESS 555
ENTER PRODUCT
IDENTIFICATION
MODE(2)(3)(5)
LOAD DATA 55
TO
ADDRESS AAA
Software Product Identification Exit(1)(6)
LOAD DATA AA
TO
ADDRESS 555
LOAD DATA 55
TO
ADDRESS AAA
OR
LOAD DATA F0
TO
ANY ADDRESS
LOAD DATA 60
TO
SECTOR ADDRESS
EXIT PRODUCT
IDENTIFICATION
MODE(4)
PAUSE 200 µs(2)
LOAD DATA F0
TO
ADDRESS 555
EXIT PRODUCT
IDENTIFICATION
MODE(4)
Notes:
1. Data Format: I/O15 - I/O8 (Don’t Care); I/O7 - I/O0 (Hex)
Address Format: A11 - A0 (Hex), A-1, and A11 - A19 (Don’t
Care).
2. Sector Lockdown feature enabled.
1. Data Format: I/O15 - I/O8 (Don’t Care); I/O7 - I/O0 (Hex)
2.
3.
4.
5.
6.
20
Notes:
Address Format: A11 - A0 (Hex), A-1, and A11 - A19 (Don’t
Care).
A1 - A19 = VIL. Manufacturer Code is read for A0 = VIL; Device
Code is read for A0 = VIH.
Additional Device Code is read for address 0003H
The device does not remain in identification mode if
powered down.
The device returns to standard operation mode.
Manufacturer Code: 1FH(x8); 001FH(x16)
Device Code: C0H (x8) - AT49BV/LV16X4A;
00C0H (x16) - AT49BV/LV16X4A;
C2H (x8) - AT49BV/LV16X4AT;
00C2H (x16) - AT49BV/LV16X4AT.
Additional Device Code: C8H (x8) - AT49BV/LV16X4A(T)
00C8H (x16) - AT49BV/LV16X4A(T)
Either one of the Product ID Exit commands can be used.
AT49BV1604A(T)/1614A(T)
1411F–FLASH–03/02
AT49BV1604A(T)/1614A(T)
Status Bit Table
Status Bit
I/O7
Read Address In
I/O6
I/O2
Plane A
Plane B
Plane A
Plane B
Plane A
Plane B
Programming in Plane A
I/O7
DATA
TOGGLE
DATA
1
DATA
Programming in Plane B
DATA
I/O7
DATA
TOGGLE
DATA
1
Erasing in Plane A
0
DATA
TOGGLE
DATA
TOGGLE
DATA
Erasing in Plane B
DATA
0
DATA
TOGGLE
DATA
TOGGLE
Erase Suspended & Read
Erasing Sector
1
1
1
1
TOGGLE
TOGGLE
Erase Suspended & Read
Non-erasing Sector
DATA
DATA
DATA
DATA
DATA
DATA
Erase Suspended &
Program Non-erasing Sector
in Plane A
I/O7
DATA
TOGGLE
DATA
TOGGLE
DATA
Erase Suspended &
Program Non-erasing Sector
in Plane B
DATA
I/O7
DATA
TOGGLE
DATA
TOGGLE
While
21
1411F–FLASH–03/02
AT49BV1604A(T)/1614A(T) Ordering Information
ICC (mA)
tACC
(ns)
Active
Standby
Ordering Code
Package
Operation Range
70
25
0.01
AT49BV1604A-70CI
AT49BV1604A-70TI
45C1
48T
Industrial
(-40° to 85°C)
90
25
0.01
AT49BV1604A-90CI
AT49BV1604A-90TI
45C1
48T
Industrial
(-40° to 85°C)
70
25
0.01
AT49BV1604AT-70CI
AT49BV1604AT-70TI
45C1
48T
Industrial
(-40° to 85°C)
90
25
0.01
AT49BV1604AT-90CI
AT49BV1604AT-90TI
45C1
48T
Industrial
(-40° to 85°C)
70
25
0.01
AT49BV1614A-70CI
AT49BV1614A-70TI
48C5
48T
Industrial
(-40° to 85°C)
90
25
0.01
AT49BV1614A-90CI
AT49BV1614A-90TI
48C5
48T
Industrial
(-40° to 85°C)
70
25
0.01
AT49BV1614AT-70CI
AT49BV1614AT-70TI
48C5
48T
Industrial
(-40° to 85°C)
90
25
0.01
AT49BV1614AT-90CI
AT49BV1614AT-90TI
48C5
48T
Industrial
(-40° to 85°C)
AT49LV1614A(T) Ordering Information
ICC (mA)
tACC
(ns)
Active
Standby
Ordering Code
Package
Operation Range
70
25
0.01
AT49LV1614A-70CI
AT49LV1614A-70TI
48C5
48T
Industrial
(-40° to 85°C)
70
25
0.01
AT49LV1614AT-70CI
AT49LV1614AT-70TI
48C5
48T
Industrial
(-40° to 85°C)
Package Type
45C1
45-ball, Plastic Chip-size Ball Grid Array Package (CBGA)
48C5
48-ball, Plastic Chip-size Ball Grid Array Package (CBGA)
48T
48-lead, Plastic Thin Small Outline Package (TSOP)
22
AT49BV1604A(T)/1614A(T)
1411F–FLASH–03/02
AT49BV1604A(T)/1614A(T)
Packaging Information
45C1 – CBGA
Dimensions in Millimeters and (Inches).
Controlling dimension: millimeters.
6.60 (0.260)
6.40 (0.252)
A1 ID
7.60 (0.299)
7.40 (0.291)
0.15 (0.006)MIN
1.20 (0.047) MAX
5.25 (0.207)
0.625 (0.025) REF
8
7
6
5
4
3
2
1
1.875(0.074) REF
A
B
C
3.75 (0.148)
D
0.75 (0.0295) BSC
NON-ACCUMULATIVE
E
F
0.30 (0.014)
DIA BALL TYP
0.75 (0.0295) BSC
NON-ACCUMULATIVE
4/11/01
R
2325 Orchard Parkway
San Jose, CA 95131
TITLE
45C1, 45-ball (8 x 6 Array), 0.75 mm Pitch, 6.5 x 7.5 x 1.2 mm
Chip-scale Ball Grid Array Package (CBGA)
DRAWING NO.
45C1
REV.
A
23
1411F–FLASH–03/02
48C5 – CBGA
Dimensions in Millimeters and (Inches).
Controlling dimension: millimeters.
6.10 (0.240)
5.90 (0.232)
A1 ID
8.10 (0.319)
7.90 (0.311)
0.25 (0.010)MIN
1.20 (0.047) MAX
TOP VIEW
SIDE VIEW
1.00(0.039) REF
4.00(0.157)
6
5
4
3
2
1
1.20 (0.047) REF
A
B
C
0.80 (0.0315) BSC
NON-ACCUMULATIVE
D
5.60 (0.220)
E
F
G
H
0.40 (0.016)
DIA BALL TYP
0.80 (0.0315) BSC
NON-ACCUMULATIVE
BOTTOM VIEW
10/18/01
R
24
2325 Orchard Parkway
San Jose, CA 95131
TITLE
48C5, 48-ball (6 x 8 Array), 0.80 mm Pitch, 6 x 8 x 1.2 mm
Chip-scale Ball Grid Array Package (CBGA)
DRAWING NO.
48C5
REV.
A
AT49BV1604A(T)/1614A(T)
1411F–FLASH–03/02
AT49BV1604A(T)/1614A(T)
48T – TSOP
PIN 1
0º ~ 8º
c
Pin 1 Identifier
D1 D
L
b
e
L1
A2
E
A
GAGE PLANE
SEATING PLANE
COMMON DIMENSIONS
(Unit of Measure = mm)
A1
MIN
NOM
MAX
A
–
–
1.20
A1
0.05
–
0.15
A2
0.95
1.00
1.05
D
19.80
20.00
20.20
D1
18.30
18.40
18.50
Note 2
E
11.90
12.00
12.10
Note 2
L
0.50
0.60
0.70
SYMBOL
Notes:
1. This package conforms to JEDEC reference MO-142, Variation DD.
2. Dimensions D1 and E do not include mold protrusion. Allowable
protrusion on E is 0.15 mm per side and on D1 is 0.25 mm per side.
3. Lead coplanarity is 0.10 mm maximum.
L1
0.25 BASIC
b
0.17
0.22
0.27
c
0.10
–
0.21
e
NOTE
0.50 BASIC
10/18/01
R
2325 Orchard Parkway
San Jose, CA 95131
TITLE
48T, 48-lead (12 x 20 mm Package) Plastic Thin Small Outline
Package, Type I (TSOP)
DRAWING NO.
REV.
48T
B
25
1411F–FLASH–03/02
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Printed on recycled paper.
1411F–FLASH–03/02
/xM