Chenmko CHT4124WPT General purpose transistor Datasheet

CHENMKO ENTERPRISE CO.,LTD
CHT4124WPT
SURFACE MOUNT
General Purpose Transistor
VOLTAGE 25 Volts
CURRENT 200 mAmpere
APPLICATION
* AF input stages and driver applicationon equipment.
* Other general purpose applications.
FEATURE
SC-70/SOT-323
* Small surface mounting type. (SC-70/SOT-323)
* High current gain.
* Suitable for high packing density.
(2)
* Low colloector-emitter saturation.
* High saturation current capability.
(3)
(1)
1.3±0.1
0.65
2.0±0.2
0.65
CONSTRUCTION
0.3±0.1
* NPN Switching Transistor
1.25±0.1
MARKING
* XW
0.8~1.1
0.05~0.2
0~0.1
0.1Min.
3
CIRCUIT
2.0~2.45
1
2
SC-70/SOT-323
Dimensions in millimeters
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
30
V
VCEO
collector-emitter voltage
open base
−
25
V
VEBO
emitter-base voltage
open collector
−
5
V
IC
collector current (DC)
−
200
mA
Ptot
total power dissipation
−
300
mW
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
150
°C
Tamb
operating ambient temperature
−65
+150
°C
Note
1. Transistor mounted on an FR4 printed-circuit board.
Tamb ≤ 25 °C; note 1
2004-11
RATING CHARACTERISTIC CURVES ( CHT4124WPT )
CHARACTERISTICS
Tamb = 25 °C unless otherwise speciÞed.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
30
25
−
V
collector-emitter breakdown voltage
IC = 10uA ; IE = 0A
IC = 1mA ; IB = 0A
−
V
emitter-base breakdown voltage
IE = 10uA ; IC = 0A
5
−
V
ICBO
collector cut-off current
IE = 0; VCB = 20 V
−
50
nA
IEBO
emitter cut-off current
IC = 0; VEB = 3 V
−
50
nA
hFE
hFE
VCEsat
DC current gain
DC current gain
collector-emitter saturation
IC = 50 mA; VCE =I 1V; note 3
60
−
IC = 2 mA; VCE = 1V
IC = 50 mA; IB = 5 mA
120
−
360
300
mV
VBEsat
base-emitter saturation voltage
IC = 50 mA; IB = 5 mA
−
950
mV
Cobo
IE = ie = 0; VCB = 5 V; f = 1 MHz
−
IE = ie = 0; VCB = 5 V; f = 1 MHz
−
4
8
pF
Cibo
output capacitance
input capacitance
fT
transition frequency
IC = 10 mA; VCE = 20 V;
f = 100 MHz
300
−
MHz
V(BR)CBO
collector-base breakdown voltage
V(BR)CEO
V(BR)EBO
Note
3. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
pF
RATING CHARACTERISTIC CURVES ( CHT4124WPT )
V CE = 5V
400
125 °C
300
25 °C
200
- 40 °C
100
0
0.1
1
10
I C - COLLECTOR CURRENT (mA)
100
Base-Emitter Saturation
Voltage vs Collector Current
1
0.8
β = 10
- 40 °C
25 °C
0.6
125 °C
0.4
0.1
IC
1
10
- COLLECTOR CURRENT (mA)
100
VCESAT- COLLECTOR-EMITTER VOLTAGE (V)
500
VBE(ON)- BASE-EMITTER ON VOLTAGE (V)
Typical Pulsed Current Gain
vs Collector Current
VBESAT- BASE-EMITTER VOLTAGE (V)
h FE - TYP ICAL PULSED CURRE NT GAIN
Typical Characteristics
Collector-Emitter Saturation
Voltage vs Collector Current
0.15
125 °C
0.1
25 °C
0.05
- 40 °C
0.1
1
VCE = 5V
0.8
- 40 °C
25 °C
0.6
125 °C
0.4
0.2
0.1
1
10
I C - COLLECTOR CURRENT (mA)
100
10
f = 1.0 MHz
VCB = 30V
CAPACITANCE (pF)
ICBO- COLLECTOR CURRENT (nA)
100
Capacitance vs
Reverse Bias Voltage
500
10
1
0.1
25
1
10
I C - COLLECTOR CURRENT (mA)
Base-Emitter ON Voltage vs
Collector Current
Collector-Cutoff Current
vs Ambient Temperature
100
β = 10
50
75
100
125
TA - AMBIENT TEMPERATURE ( °C)
150
5
4
3
C ibo
2
C obo
1
0.1
1
10
REVERSE BIAS VOLTAGE (V)
100
RATING CHARACTERISTIC CURVES ( CHT4124WPT )
Typical Characteristics
Noise Figure vs Source Resistance
Noise Figure vs Frequency
12
I C = 1.0 mA
R S = 200Ω
10
V CE = 5.0V
I C = 1.0 mA
NF - NOISE FIGURE (dB)
NF - NOISE FIGURE (dB)
12
I C = 50 µA
R S = 1.0 kΩ
8
I C = 0.5 mA
R S = 200Ω
6
4
2
I C = 100 µA, R S = 500 Ω
0
0.1
1
10
f - FREQUENCY (kHz)
10
I C = 5.0 mA
I C = 50 µA
8
6
I C = 100 µA
4
2
0
0.1
100
V CE = 40V
I C = 10 mA
10
100
f - FREQUENCY (MHz)
PD - POWER DISSIPATION (W)
- CURRENT GAIN (dB)
fe
h
θ
1
θ - DEGREES
0
20
40
60
80
100
120
140
160
180
h fe
1
1000
0.75
0.5
0.25
0
0
Turn-On Time vs Collector Current
I B1 = I B2 =
Ic
VCC = 40V
10
TIME (nS)
15V
t r @ V CC = 3.0V
2.0V
10
1
10
I C - COLLECTOR CURRENT (mA)
125
150
100
I B1 = I B2 =
Ic
10
T J = 25°C
T J = 125°C
10
t d @ VCB = 0V
5
50
75
100
TEMPERATURE (o C)
Rise Time vs Collector Current
40V
100
25
500
t r - RISE TIME (ns)
500
100
Power Dissipation vs
Ambient Temperature
Current Gain and Phase Angle
vs Frequency
50
45
40
35
30
25
20
15
10
5
0
1
10
R S - SOURCE RESISTANCE ( kΩ )
100
5
1
10
I C - COLLECTOR CURRENT (mA)
100
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