CHENMKO ENTERPRISE CO.,LTD CHT4124WPT SURFACE MOUNT General Purpose Transistor VOLTAGE 25 Volts CURRENT 200 mAmpere APPLICATION * AF input stages and driver applicationon equipment. * Other general purpose applications. FEATURE SC-70/SOT-323 * Small surface mounting type. (SC-70/SOT-323) * High current gain. * Suitable for high packing density. (2) * Low colloector-emitter saturation. * High saturation current capability. (3) (1) 1.3±0.1 0.65 2.0±0.2 0.65 CONSTRUCTION 0.3±0.1 * NPN Switching Transistor 1.25±0.1 MARKING * XW 0.8~1.1 0.05~0.2 0~0.1 0.1Min. 3 CIRCUIT 2.0~2.45 1 2 SC-70/SOT-323 Dimensions in millimeters LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 30 V VCEO collector-emitter voltage open base − 25 V VEBO emitter-base voltage open collector − 5 V IC collector current (DC) − 200 mA Ptot total power dissipation − 300 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C Note 1. Transistor mounted on an FR4 printed-circuit board. Tamb ≤ 25 °C; note 1 2004-11 RATING CHARACTERISTIC CURVES ( CHT4124WPT ) CHARACTERISTICS Tamb = 25 °C unless otherwise speciÞed. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT 30 25 − V collector-emitter breakdown voltage IC = 10uA ; IE = 0A IC = 1mA ; IB = 0A − V emitter-base breakdown voltage IE = 10uA ; IC = 0A 5 − V ICBO collector cut-off current IE = 0; VCB = 20 V − 50 nA IEBO emitter cut-off current IC = 0; VEB = 3 V − 50 nA hFE hFE VCEsat DC current gain DC current gain collector-emitter saturation IC = 50 mA; VCE =I 1V; note 3 60 − IC = 2 mA; VCE = 1V IC = 50 mA; IB = 5 mA 120 − 360 300 mV VBEsat base-emitter saturation voltage IC = 50 mA; IB = 5 mA − 950 mV Cobo IE = ie = 0; VCB = 5 V; f = 1 MHz − IE = ie = 0; VCB = 5 V; f = 1 MHz − 4 8 pF Cibo output capacitance input capacitance fT transition frequency IC = 10 mA; VCE = 20 V; f = 100 MHz 300 − MHz V(BR)CBO collector-base breakdown voltage V(BR)CEO V(BR)EBO Note 3. Pulse test: tp ≤ 300 µs; δ ≤ 0.02. pF RATING CHARACTERISTIC CURVES ( CHT4124WPT ) V CE = 5V 400 125 °C 300 25 °C 200 - 40 °C 100 0 0.1 1 10 I C - COLLECTOR CURRENT (mA) 100 Base-Emitter Saturation Voltage vs Collector Current 1 0.8 β = 10 - 40 °C 25 °C 0.6 125 °C 0.4 0.1 IC 1 10 - COLLECTOR CURRENT (mA) 100 VCESAT- COLLECTOR-EMITTER VOLTAGE (V) 500 VBE(ON)- BASE-EMITTER ON VOLTAGE (V) Typical Pulsed Current Gain vs Collector Current VBESAT- BASE-EMITTER VOLTAGE (V) h FE - TYP ICAL PULSED CURRE NT GAIN Typical Characteristics Collector-Emitter Saturation Voltage vs Collector Current 0.15 125 °C 0.1 25 °C 0.05 - 40 °C 0.1 1 VCE = 5V 0.8 - 40 °C 25 °C 0.6 125 °C 0.4 0.2 0.1 1 10 I C - COLLECTOR CURRENT (mA) 100 10 f = 1.0 MHz VCB = 30V CAPACITANCE (pF) ICBO- COLLECTOR CURRENT (nA) 100 Capacitance vs Reverse Bias Voltage 500 10 1 0.1 25 1 10 I C - COLLECTOR CURRENT (mA) Base-Emitter ON Voltage vs Collector Current Collector-Cutoff Current vs Ambient Temperature 100 β = 10 50 75 100 125 TA - AMBIENT TEMPERATURE ( °C) 150 5 4 3 C ibo 2 C obo 1 0.1 1 10 REVERSE BIAS VOLTAGE (V) 100 RATING CHARACTERISTIC CURVES ( CHT4124WPT ) Typical Characteristics Noise Figure vs Source Resistance Noise Figure vs Frequency 12 I C = 1.0 mA R S = 200Ω 10 V CE = 5.0V I C = 1.0 mA NF - NOISE FIGURE (dB) NF - NOISE FIGURE (dB) 12 I C = 50 µA R S = 1.0 kΩ 8 I C = 0.5 mA R S = 200Ω 6 4 2 I C = 100 µA, R S = 500 Ω 0 0.1 1 10 f - FREQUENCY (kHz) 10 I C = 5.0 mA I C = 50 µA 8 6 I C = 100 µA 4 2 0 0.1 100 V CE = 40V I C = 10 mA 10 100 f - FREQUENCY (MHz) PD - POWER DISSIPATION (W) - CURRENT GAIN (dB) fe h θ 1 θ - DEGREES 0 20 40 60 80 100 120 140 160 180 h fe 1 1000 0.75 0.5 0.25 0 0 Turn-On Time vs Collector Current I B1 = I B2 = Ic VCC = 40V 10 TIME (nS) 15V t r @ V CC = 3.0V 2.0V 10 1 10 I C - COLLECTOR CURRENT (mA) 125 150 100 I B1 = I B2 = Ic 10 T J = 25°C T J = 125°C 10 t d @ VCB = 0V 5 50 75 100 TEMPERATURE (o C) Rise Time vs Collector Current 40V 100 25 500 t r - RISE TIME (ns) 500 100 Power Dissipation vs Ambient Temperature Current Gain and Phase Angle vs Frequency 50 45 40 35 30 25 20 15 10 5 0 1 10 R S - SOURCE RESISTANCE ( kΩ ) 100 5 1 10 I C - COLLECTOR CURRENT (mA) 100