DMT10H015LFG Green 100V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS(ON) max ID TC = +25°C Low RDS(ON) – Ensures On State Losses Are Minimized Excellent Qgd x RDS (ON) Product (FOM) 13.5mΩ @ VGS = 10V 42A 18mΩ @ VGS = 6.0V 36A Advanced Technology for DC/DC Converters Small Form Factor Thermally Efficient Package Enables Higher Density End Products Occupies Just 33% of The Board Area Occupied by SO-8 Enabling Smaller End Product 100% UIS (Avalanche) Rated Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability 100V Description and Applications This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Mechanical Data Applications Synchronous Rectifier Backlighting Power Management Functions DC-DC Converters Case: POWERDI®3333-8 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections Indicator: See Diagram Terminals: Finish Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 e3 Weight: 0.008 grams (Approximate) D Pin 1 S S S G G D D S D D Top View Bottom View Equivalent Circuit Ordering Information (Note 4) Part Number DMT10H015LFG-7 DMT10H015LFG-13 Notes: Case POWERDI®3333-8 POWERDI®3333-8 Packaging 2,000/Tape & Reel 3,000/Tape & Reel 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information YYWW NEW PRODUCT V(BR)DSS Features and Benefits S1H = Product Type Marking Code YYWW = Date Code Marking YY = Last Two Digits of Year (ex: 15 = 2015) WW = Week Code (01 to 53) S1H DMT10H015LFG Document number: DS38222 Rev. 3 - 2 1 of 7 www.diodes.com November 2015 © Diodes Incorporated DMT10H015LFG Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic NEW PRODUCT Symbol Value Unit Drain-Source Voltage VDSS 100 V Gate-Source Voltage VGSS ±20 V TA = +25°C TA = +70°C ID 10 8.0 A TC = +25°C TC = +100°C ID 42 26 A Continuous Drain Current (Note 5) VGS = 10V Maximum Continuous Body Diode Forward Current (Note 5) IS 1.5 A IDM 75 A IAS EAS 7.5 85 A mJ Symbol PD RJA PD RJC TJ, TSTG Value 2.0 61 Unit W °C/W W °C/W °C Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%) Avalanche Current (L = 3mH) Avalanche Energy (L = 3mH) Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Total Power Dissipation Thermal Resistance, Junction to Case Operating and Storage Temperature Range TA = +25°C TC = +25°C 35 3.5 -55 to +150 Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 6) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 6) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS 100 — — — — — — 1 ±100 V µA nA VGS = 0V, ID = 1mA VDS = 80V, VGS = 0V VGS = 20V, VDS = 0V VGS(TH) RDS(ON) VSD 2.0 10.8 13.3 0.9 3.5 13.5 18 1.3 V Static Drain-Source On-Resistance 1.4 — — — VDS = VGS, ID = 250µA VGS = 10V, ID = 20A VGS = 6.0V, ID = 20A VGS = 0V, IS = 20A Ciss Coss Crss RG Qg Qgs Qgd tD(ON) tR tD(OFF) tF tRR QRR — — — — — — — — — — — — — 1,871 261 6.9 0.75 33.3 6.9 5.1 6.5 7.0 19.7 8.1 37.9 51.9 — — — — — — — — — — — — — Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 7) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Reverse Recovery Time Reverse Recovery Charge Notes: mΩ V Test Condition pF VDS = 50V, VGS = 0V f = 1MHz VDS = 0V, VGS = 0V, f = 1MHz nC VDD = 50V, ID = 10A, VGS = 10V ns VDD = 50V, VGS = 10V, ID = 10A, RG = 6Ω ns nC IF = 10A, di/dt = 100A/µs 5. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate. 6. Short duration pulse test used to minimize self-heating effect. 7. Guaranteed by design. Not subject to product testing. DMT10H015LFG Document number: DS38222 Rev. 3 - 2 2 of 7 www.diodes.com November 2015 © Diodes Incorporated DMT10H015LFG 30.0 30 VGS = 10.0V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) VDS = 5V 25 VGS = 6.0V VGS = 5.0V 20.0 VGS = 4.5V 15.0 VGS = 3.5V VGS = 4.0V 10.0 5.0 20 15 10 125oC 85oC 150oC 25oC 5 VGS = 3.0V -55oC 0.0 0 0.5 1 1.5 2 2.5 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1. Typical Output Characteristic 3 0.025 0.02 VGS = 6V 0.015 0.01 VGS = 10V 0.005 0 5 10 15 20 25 ID, DRAIN-SOURCE CURRENT (A) 30 1.5 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0 2 2.5 3 3.5 4 VGS, GATE-SOURCE VOLTAGE (V) Figure 2. Typical Transfer Characteristic 0.08 0.06 ID = 20A 0.04 0.02 0 0 2 150oC 125oC 85oC 0.015 25oC 0.01 -55oC 0.005 0 0 5 10 15 20 25 30 ID, DRAIN CURRENT (A) Figure 5. Typical On-Resistance vs. Drain Current and Junction Temperature DMT10H015LFG Document number: DS38222 Rev. 3 - 2 6 8 10 12 14 16 18 20 Figure 4. Typical Transfer Characteristic RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) VGS = 10V 0.02 4 VGS, GATE-SOURCE VOLTAGE (V) 0.03 0.025 4.5 0.1 Figure 3. Typical On-Resistance vs. Drain Current and Gate Voltage RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) NEW PRODUCT 25.0 3 of 7 www.diodes.com 1.8 1.6 1.4 1.2 VGS = 10V, ID = 20A 1 0.8 VGS = 6V, ID = 20A 0.6 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (℃) Figure 6. On-Resistance Variation with Junction Temperature November 2015 © Diodes Incorporated VGS(TH), GATE THRESHOLD VOLTAGE (V) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0.04 0.03 VGS = 6V, ID = 20A 0.02 VGS = 10V, ID = 20A 0.01 0 -50 -25 0 25 50 75 100 125 2.6 2.4 2.2 ID = 1mA 2 1.8 ID = 250µA 1.6 1.4 1.2 1 -50 150 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (℃) TJ, JUNCTION TEMPERATURE (℃) Figure 7. On-Resistance Variation with Junction Temperature Figure 8. Gate Threshold Variation vs. Junction Temperature 10000 30 f=1MHz CT, JUNCTION CAPACITANCE (pF) VGS = 0V 25 IS, SOURCE CURRENT (A) 20 15 TJ = 85oC 10 TJ = 25oC TJ = 125oC 5 TJ = 150oC TJ = -55oC 1000 Ciss Coss 100 10 Crss 1 0 0 0.3 0.6 0.9 1.2 VSD, SOURCE-DRAIN VOLTAGE (V) 0 1.5 10 20 30 40 VDS, DRAIN-SOURCE VOLTAGE (V) 50 Figure 10. Typical Junction Capacitance Figure 9. Diode Forward Voltage vs. Current 1000 10 RDS(ON) Limited PW =1ms 100 8 4 VDS = 50V, ID = 10A 2 PW =100µs ID, DRAIN CURRENT (A) 6 VGS (V) NEW PRODUCT DMT10H015LFG 10 1 0.1 0.01 0.001 0 0 5 10 15 20 25 30 35 Document number: DS38222 Rev. 3 - 2 PW =100ms TJ(Max) = 150℃ PW =1s TC = 25℃ PW =10s Single Pulse DUT on 1*MRP Board VGS= 10V 0.01 0.1 1 DC 10 100 1000 VDS, DRAIN-SOURCE VOLTAGE (V) Qg (nC) Figure 11. Gate Charge DMT10H015LFG PW =10ms Figure 12. SOA, Safe Operation Area 4 of 7 www.diodes.com November 2015 © Diodes Incorporated DMT10H015LFG r(t), TRANSIENT THERMAL RESISTANCE NEW PRODUCT 1 D=0.5 D=0.3 0.1 D=0.9 D=0.7 D=0.1 D=0.05 D=0.02 0.01 D=0.01 D=0.005 RθJA(t) = r(t) * RθJA RθJA = 119℃/W Duty Cycle, D = t1 / t2 D=Single Pulse 0.001 0.0001 DMT10H015LFG Document number: DS38222 Rev. 3 - 2 0.001 0.01 0.1 1 10 t1, PULSE DURATION TIME (sec) Figure 13. Transient Thermal Resistance 5 of 7 www.diodes.com 100 1000 November 2015 © Diodes Incorporated DMT10H015LFG Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. A3 A1 NEW PRODUCT A Seating Plane D L(4x) D2 1 Pin #1 ID b2(4x) E E2 e1 8 z(4x) b e L1(3x) POWERDI®3333-8 Dim Min Max Typ A 0.75 0.85 0.80 A1 0.00 0.05 0.02 A3 0.203 b 0.27 0.37 0.32 b2 0.20 D 3.25 3.35 3.30 D2 2.22 2.32 2.27 E 3.25 3.35 3.30 E2 1.56 1.66 1.61 e 0.65 e1 0.79 0.89 0.84 L 0.35 0.45 0.40 L1 0.39 z 0.515 All Dimensions in mm Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. X3 X2 8 Y2 X1 Y1 Y3 Y Dimensions Value (in mm) C 0.650 X 0.420 X1 0.420 X2 0.230 X3 2.370 Y 0.700 Y1 1.850 Y2 2.250 Y3 3.700 1 X DMT10H015LFG Document number: DS38222 Rev. 3 - 2 C 6 of 7 www.diodes.com November 2015 © Diodes Incorporated DMT10H015LFG IMPORTANT NOTICE NEW PRODUCT DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. 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