Transmissive Photosensors (Photo lnterrupters) CNZ1021 (ON1021), CNZ1023 (ON1023), CNA1009H (ON1024) Photo lnterrupter For contactless SW, object detection ■ Overview ■ Features CNZ1021, CNZ1023 and CNA1009H are a transmissive photosensor in which a high efficiency GaAs infrared light emitting diode is used as the light emitting element, and a high sensitivity phototransistor is used as the light detecting element. The two elements are arranged so as to face each other, and objects passing between them are detected. • Highly precise position detection: 0.25 mm • Gap width: 3 mm (CNZ1021, CNZ1023) 5 mm (CNA1009H) • The type directly attached to PCB ....... CNZ1021 Screw-fastened type (one side) ............ CNZ1023 The type directly attached to PCB ....... CNA1009H (with a positioning pins) CNZ1021 Unit: mm CNZ1023 Unit: mm Σ Σ 18.0 (2-0.45) (4-R2) (2-0.45) (2-0.45) (7.6) (2.54) 1 4 6.0 3.5 (2-0.45) (2.54) SEC. A-A' 1: Anode 2: Cathode 3: Collector 4: Emitter PISTR104-001 Package 3 0.5 +0.15 φ3.0-0 +0.15 A' SEC. A-A' 2 2-R1.5 Device center 3.0 -0 (2.5) A' (C1.2) 0.4±0.1 A 10.0 10.0 min. 2.1±0.15 10.0 Device center 5.0 3.0±0.15 2.5 (2.5) (C1.2) (7.6) 12.0±0.15 12.0 0.4±0.1 A 2.5 10.0 min. 2.0 5.0 2.1±0.15 12.0 3.0±0.15 CNA1009H 2 3 1 4 1: Anode 2: Cathode 3: Collector 4: Emitter PISTR104-003 Package Unit: mm Σ 14.0 6.0 5.0 (2.5) 5.0±0.15 0.5±0.1 A 2.2±0.15 10.0 A' 2-0.7 2.5 10.0 min. (C1) Device center 2-φ0.7±0.1 5.2±0.1 (2-0.45) (2-0.45) (2.54) (10.0) SEC. A-A' 2 3 1 2.35±0.1 4 6.6±0.1 1: Anode 2: Cathode 3: Collector 4: Emitter PISTR104-004 Package (Note) 1. Tolerance unless otherwise specified is ±0.3 2. ( ) Dimension is reference Note) The part numbers in the parenthesis show conventional part number. Publication date: April 2004 SHG00017BED 1 CNZ1021, CNZ1023, CNA1009H ■ Absolute Maximum Ratings Ta = 25°C Parameter Input (Light Reverse emitting diode) voltage Symbol Rating Unit VR 3 V CNZ1021 CNZ1023 3 CNA1009H 5 Forward current IF 50 mA Power dissipation *1 PD 75 mW Output (Photo Collector-emitter voltage transistor) (Base open) VCEO 30 V Emitter-collector voltage (Base open) VECO 5 V Temperature Collector current IC 20 mA Collector power dissipation *2 PC 100 mW Operating ambient temperature Topr −25 to +85 °C Storage temperature Tstg −40 to +100 °C Note) *1: Input power derating ratio is 1.0 mW/°C at Ta ≥ 25°C. *2: Output power derating ratio is 1.33 mW/°C at Ta ≥ 25°C. ■ Electrical-Optical Characteristics Ta = 25°C ± 3°C Parameter Symbol Forward voltage Input characteristics Reverse current Output Collector-emitter cutoff current characteristics (Base open) VF IF = 20 mA IR VR = 3 V ICEO Collector current IC Transfer characteristics Collector-emitter saturation voltage VCE(sat) Rise time * Fall time * Conditions Min VCE = 10 V 50 Ω 2 VCC VCC = 5 V, IF = 20 mA, RL = 100 Ω 1.25 1.40 V 10 µA 200 nA 15.0 mA 0.4 V 0.5 IF = 40 mA, IC = 1 mA Unit tr VCC = 5 V, IC = 1 mA 5 µs tf RL = 100 Ω 5 µs (Input pulse) Sig. out RL Max 10 Note) 1. Input and output are practiced by electricity. 2. This device is designed be disregarded radiation. 3. *: Switching time measurement circuit Sig. in Typ 90% 10% (Output pulse) tr SHG00017BED tf tr : Rise time tf : Fall time CNZ1021, CNZ1023, CNA1009H IF , I C T a IF V F Ta = 25°C 50 IF = 50 mA 40 30 IC 20 10 Forward voltage VF (V) 50 40 30 20 40 60 80 0 100 0 0.4 10 mA 1 mA 0.8 0.4 IC I F 2.0 Collector current IC (mA) 10 −1 40 20 mA 10 mA 1 10 −1 1 VCE = 5 V IF = 20 mA 80 40 0 −40 102 10 120 0 40 tr I C RL = 1 kΩ 500 Ω 10 Rise time tr (µs) 100 VCC = 5 V Ta = 25°C 102 1 ∆IC d 102 VCE = 10 V 100 Ω 1 10 −1 10 −1 80 Ambient temperature Ta (°C ) 10 −2 10 −1 1 10 Collector current IC (mA) SHG00017BED 80 Ambient temperature Ta (°C ) Collector-emitter voltage VCE (V) ICEO Ta 10 80 ∆IC Ta IF = 30 mA 10 −2 10 −1 102 10 40 0 Ambient temperature Ta (°C ) 160 10 Forward current IF (mA) 0 0 −40 2.4 Ta = 25°C 1 103 1.6 IC VCE 10 1 1.2 102 VCE = 5 V Ta = 25°C 10 −2 10 −1 0.8 Forward voltage VF (V) Relative collector current ∆IC (%) 20 Relative collector current ∆IC (%) 0 102 10 −2 −40 1.2 10 Ambient temperature Ta (°C ) Collector current IC (mA) 1.6 IF 0 −25 Collector-emitter cutoff current (Base open) ICEO (µA) VF T a 60 Forward current IF (mA) Forward current IF , collector current IC (mA) 60 102 VCE = 5 V Ta = 25°C IF = 20 mA 80 Criterion 0 d 60 40 20 0 0 1 2 3 4 5 6 Distance d (mm) 3 Caution for Safety ■ This product contains Gallium Arsenide (GaAs). DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the product. Follow related laws and ordinances for disposal. The product should be excluded form general industrial waste or household garbage. Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technical information described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. 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