FDMS86520L N-Channel PowerTrench® MOSFET 60 V, 22 A, 8.2 mΩ Features General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers.It has been optimized for low gate charge, low rDS(on), fast switching speed and body diode reverse recovery performance. Max rDS(on) = 8.2 mΩ at VGS = 10 V, ID = 13.5 A Max rDS(on) = 11.7 mΩ at VGS = 4.5 V, ID = 11.5 A Advanced package and silicon combination for low rDS(on) and high efficiency MSL1 robust package design 100% UIL tested Applications RoHS Compliant Primary Switch in isolated DC-DC Synchronous Rectifier Load Switch Bottom Top Pin 1 S D D D S S G D 5 4 G D 6 3 S D 7 2 S D 8 1 S D Power 56 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage Drain Current -Continuous (Package limited) ID TC = 25 °C -Continuous (Silicon limited) TC = 25 °C -Continuous TA = 25 °C PD TJ, TSTG Units V ±20 V 22 71 (Note 1a) -Pulsed 13.5 A 60 Single Pulse Avalanche Energy EAS Ratings 60 (Note 3) Power Dissipation TC = 25 °C Power Dissipation TA = 25 °C 91 69 (Note 1a) Operating and Storage Junction Temperature Range 2.5 -55 to +150 mJ W °C Thermal Characteristics RθJC Thermal Resistance, Junction to Case RθJA Thermal Resistance, Junction to Ambient 1.8 (Note 1a) 50 °C/W Package Marking and Ordering Information Device Marking FDMS86520L Device FDMS86520L ©2011 Fairchild Semiconductor Corporation FDMS86520L Rev.C Package Power 56 1 Reel Size 13 ’’ Tape Width 12 mm Quantity 3000 units www.fairchildsemi.com FDMS86520L N-Channel PowerTrench® MOSFET April 2011 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V ΔBVDSS ΔTJ Breakdown Voltage Temperature Coefficient ID = 250 μA, referenced to 25 °C IDSS Zero Gate Voltage Drain Current VDS = 48 V, VGS = 0 V 1 μA IGSS Gate to Source Leakage Current VGS = ±20 V, VDS = 0 V ±100 nA 3 V 60 V 29 mV/°C On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 μA ΔVGS(th) ΔTJ Gate to Source Threshold Voltage Temperature Coefficient ID = 250 μA, referenced to 25 °C rDS(on) gFS Static Drain to Source On Resistance Forward Transconductance 1 1.8 -7 mV/°C VGS = 10 V, ID = 13.5 A 6.7 8.2 VGS = 4.5 V, ID = 11.5 A 9.1 11.7 VGS = 10 V, ID = 13.5 A, TJ = 125 °C 9.6 11.8 VDS = 5 V, ID = 13.5 A 51 mΩ S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance VDS = 30 V, VGS = 0 V, f = 1 MHz 3470 4615 pF 625 835 pF 25 45 pF Ω 0.6 Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time VDD = 30 V, ID = 13.5 A, VGS = 10 V, RGEN = 6 Ω 15 27 5.6 11 ns ns 32 52 ns tf Fall Time 3.4 10 ns Qg Total Gate Charge VGS = 0 V to 10 V 45 63 nC VGS = 0 V to 4.5 V VDD = 30 V, ID = 13.5 A 21 30 9.5 nC 4.7 nC Qg Total Gate Charge Qgs Gate to Source Charge Qgd Gate to Drain “Miller” Charge nC Drain-Source Diode Characteristics VSD Source-Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, IS = 2.1 A (Note 2) 0.72 1.2 VGS = 0 V, IS = 13.5 A (Note 2) 0.83 1.3 IF = 13.5 A, di/dt = 100 A/μs IF = 13.5 A, di/dt = 300 A/μs V 37 60 ns 21 34 nC 30 48 ns 37 59 nC Notes: 1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by the user's board design. a. 50 °C/W when mounted on a 1 in2 pad of 2 oz copper. b. 125 °C/W when mounted on a minimum pad of 2 oz copper. 2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%. 3. Starting TJ = 25 °C, L = 1 mH, IAS = 13.5 A, VDD = 54 V, VGS = 10 V. ©2011 Fairchild Semiconductor Corporation FDMS86520L Rev.C 2 www.fairchildsemi.com FDMS86520L N-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25 °C unless otherwise noted 60 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 50 ID, DRAIN CURRENT (A) 5 VGS = 10 V VGS = 4.5 V VGS = 3.5 V VGS = 4 V 40 30 20 VGS = 3 V 10 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 0 0.0 0.5 1.0 1.5 2.0 VGS = 3 V 4 VGS = 3.5 V 3 VGS = 4 V 2 1 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 0 10 20 30 40 50 60 ID, DRAIN CURRENT (A) Figure 1. On Region Characteristics Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 1.8 40 ID = 13.5 A VGS = 10 V rDS(on), DRAIN TO 1.6 1.4 1.2 1.0 0.8 0.6 -75 -50 -25 0 25 50 75 SOURCE ON-RESISTANCE (mΩ) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE VGS = 10 V 0 2.5 VDS, DRAIN TO SOURCE VOLTAGE (V) ID = 13.5 A 20 TJ = 125 oC 10 TJ = 25 oC 0 100 125 150 2 IS, REVERSE DRAIN CURRENT (A) 40 TJ = 150 oC 30 TJ = 25 oC 20 TJ = -55 oC 10 0 2 3 8 10 100 VDS = 5 V 1 6 Figure 4. On-Resistance vs Gate to Source Voltage PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 50 4 VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. Normalized On Resistance vs Junction Temperature 60 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 30 TJ, JUNCTION TEMPERATURE (oC) ID, DRAIN CURRENT (A) VGS = 4.5 V 4 VGS = 0 V 10 1 TJ = 25 oC 0.1 TJ = -55 oC 0.01 0.001 0.0 5 TJ = 150 oC 0.2 0.4 0.6 0.8 1.0 VGS, GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current ©2011 Fairchild Semiconductor Corporation FDMS86520L Rev.C 3 1.2 www.fairchildsemi.com FDMS86520L N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted 10000 ID = 13.5 A Ciss 8 CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE (V) 10 VDD = 30 V 6 VDD = 20 V VDD = 40 V 4 1000 Coss 100 Crss 10 2 f = 1 MHz VGS = 0 V 0 0 5 10 15 20 25 30 35 40 1 0.1 45 1 Figure 7. Gate Charge Characteristics ID, DRAIN CURRENT (A) IAS, AVALANCHE CURRENT (A) 80 TJ = 25 oC 10 TJ = 100 oC TJ = 125 oC 60 VGS = 10 V 40 VGS = 4.5 V 20 o Limited by Package 1 0.001 0.01 0.1 1 10 0 25 100 50 100 125 150 Figure 10. Maximum Continuous Drain Current vs Case Temperature 1000 P(PK), PEAK TRANSIENT POWER (W) 100 100 μs 10 1 ms 10 ms THIS AREA IS LIMITED BY rDS(on) 100 ms SINGLE PULSE TJ = MAX RATED 1s o 0.01 0.01 75 o Figure 9. Unclamped Inductive Switching Capability 0.1 RθJC = 1.8 C/W TC, CASE TEMPERATURE ( C) tAV, TIME IN AVALANCHE (ms) 1 60 Figure 8. Capacitance vs Drain to Source Voltage 50 ID, DRAIN CURRENT (A) 10 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) RθJA = 125 C/W 10 s TA = 25 oC DC 0.1 1 10 100 300 100 10 SINGLE PULSE RθJA = 125 oC/W 1 TA = 25 oC 0.5 -4 10 10 -3 -2 10 -1 10 1 100 10 1000 t, PULSE WIDTH (sec) VDS, DRAIN to SOURCE VOLTAGE (V) Figure 11. Forward Bias Safe Operating Area ©2011 Fairchild Semiconductor Corporation FDMS86520L Rev.C VGS = 10 V Figure 12. Single Pulse Maximum Power Dissipation 4 www.fairchildsemi.com FDMS86520L N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted 2 NORMALIZED THERMAL IMPEDANCE, ZθJA 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 0.01 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA SINGLE PULSE o RθJA = 125 C/W 0.001 -4 10 -3 10 -2 10 -1 10 1 10 100 1000 t, RECTANGULAR PULSE DURATION (sec) Figure 13. Junction-to-Ambient Transient Thermal Response Curve ©2011 Fairchild Semiconductor Corporation FDMS86520L Rev.C 5 www.fairchildsemi.com FDMS86520L N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted FDMS86520L N-Channel PowerTrench® MOSFET Dimensional Outline and Pad Layout ©2011 Fairchild Semiconductor Corporation FDMS86520L Rev.C 6 www.fairchildsemi.com tm tm tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I53 ©2011 Fairchild Semiconductor Corporation FDMS86520L Rev.C 7 www.fairchildsemi.com FDMS86520L N-Channel PowerTrench® MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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