Pan Jit ES1C Surface mount superfast rectifier Datasheet

ES1A THRU ES1J
SURFACE MOUNT SUPERFAST RECTIFIER
VOLTAGE - 50 to 600 Volts CURRENT - 1.0 Ampere
FEATURES
l For surface mounted applications
l Low profile package
l
l
Built-in strain relief
Easy pick and place
l
l
Superfast recovery times for high efficiency
Plastic package has Underwriters Laboratory
l
Flammability Classification 94V-O
Glass passivated junction
l
SMA/DO-214AC
High temperature soldering:
260 ¢J /10 seconds at terminals
MECHANICAL DATA
Case: JEDEC DO-214AC molded plastic
Terminals: Solder plated, solderable per
MIL-STD-750, Method 2026
Polarity: Indicated by cathode band
Standard packaging: 12mm tape (EIA-481)
Weight: 0.002 ounce, 0.064 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ¢J ambient temperature unless otherwise specified.
Single phase, half wave 60Hz resistive or inductive load.
For capacitive load, derate current by 20%.
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current,
at TL=120 ¢J
Peak Forward Surge Current 8.3ms single half sinewave superimposed on rated load(JEDEC method)
Maximum Instantaneous Forward Voltage at 1.0A
Maximum DC Reverse Current TA=25 ¢J
At Rated DC Blocking Voltage TA=100 ¢J
Maximum Reverse Recovery Time (Note 1)
Typical Junction capacitance (Note 2)
Typical Thermal Resistance (Note 3)
Operating and Storage Temperature Range
SYMBOLS ES1A ES1B ES1C ES1D ES1E ES1G ES1J UNITS
50
100
150
200
300
400
600
Volts
VRRM
35
70
105
140
210
280
420
Volts
VRMS
50
100
150
200
300
400
600
Volts
VDC
I(AV)
1.0
Amps
IFSM
30.0
Amps
VF
IR
TRR
CJ
R £KJL
TJ ,TSTG
NOTES:
1. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, Irr=0.25A
2. Measured at 1 MHz and Applied reverse voltage of 4.0 volts
2
3. 8.0mm (.013mm thick) land areas
0.95
1.25
5.0
100
35.0
10.0
35
-50 to +150
1.7
Volts
£g A
nS
PF
¢J /W
¢J
RATING AND CHARACTERISTIC CURVES
ES1A THRU ES1J
trr
AVERAGE FORWARD
CURRENT AMPERES
+0.5A
0
-0.25
NOTE:1.Rise Time = 7ns max.
Input Impedance = 1 megohm. 22pF
2.Rise Time = 10ns max.
2.0
SINGLE PHASE HALF WAVE
RESISTIVE OR INDUCTIVE
P.C.B MOUNTED ON
0.315×0.315"(8.0×8.0mm)
PAD AREAS
1.0
-1.0
SET TIME
BASE FOR
Source Impedance = 50 Ohms
25
1cm
50
75
100 125 150 175
LEAD TEMPERATURE, ¢J
50 ns/cm
1000
100
TJ = 125 ¢J
10
TJ = 75¢J
1
TJ = 25¢J
0.1
20
40
60
Fig. 2-MAXIMUM AVERAGE FORWARD
CURRENT RATING
10
INSTANTANEOUS FORWARD CURRENT AMPERES
IR-REVERSE LEAKAGE CURRENT, MICROAMPERES
Fig. 1-REVERSE RECOVERY TIME CHARACTERISTIC AND
TEST CIRCUIT DIAGRAM
80
100
ES1A
1
ES1E
ES1J
0.1
T J = 25 ¢J
0.01
0.001
120
0.2
0.4
0.6
0.8
1.0
1.2
1.4
INSTANTANEOUS FORWARD VOLTAGE VOLTS
Fig. 3-TYPICAL REVERSE CHARACTERISTICS
Fig. 4-TYPICAL FORWARD CHARACTERISTICS
14
30
JUNCTION CAPACITANCE, pF
PEAK FORWARD SURGE CURRENT, AMPERES
% OF PIV. VOLTS
25
8.3ms SINGLE HALF SINE WAVE
JEDEC METHOD
20
15
10
5
1
2
5
10
20
50
NUMBER OF CYCLES AT 60Hz
Fig. 5-MAXIMUM NON-REPETITIVE SURGE
CURRENT
100
12
10
TJ = 25¢J
f = 1.0MHz
Vsig = 50mVp-p
8.0
6.0
4.0
2.0
.1
1
10
100
REVERSE VOLTAGE, VOLTS
Fig. 6-TYPICAL JUNCTION CAPACITANCE
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