AO4423 30V P-Channel MOSFET General Description Product Summary The AO4423 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications. VDS (V) = -30V ID = -17A RDS(ON) < 6.2mΩ RDS(ON) < 7.2mΩ (VGS = -20V) (VGS = -20V) (VGS = -10V) ESD Protected 100% UIS tested 100% Rg tested (note *) SOIC-8 Top View D D D Bottom View D D G G S S S S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current AF Units V VGS ±25 V ID -14 IDM -182 TA=25°C TA=70°C Pulsed Drain Current B TA=25°C Power Dissipation A Maximum -30 TA=70°C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient AF Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Alpha & Omega Semiconductor, Ltd. -17 3.1 PD W 2 TJ, TSTG -55 to 150 Symbol t ≤ 10s Steady-State Steady-State A RθJA RθJL Typ 26 50 14 °C Max 40 75 24 Units °C/W °C/W °C/W www.aosmd,com AO4423 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=-250µA, VGS=0V -30 -1 Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VGS(th) Gate Threshold Voltage VDS=VGS ID=-250µA -1.5 ID(ON) On state drain current VGS=-10V, VDS=-5V -182 TJ=55°C -5 ±1 µA ±10 µA -2.6 V 6.2 9 VGS=-10V, ID=-15A 5.9 7.2 mΩ VGS=-6V, ID=-10A 7.5 9.5 mΩ Forward Transconductance Diode Forward Voltage IS=-1A,VGS=0V IS Maximum Body-Diode Continuous Current 48 -0.71 DYNAMIC PARAMETERS Input Capacitance Ciss Output Capacitance Rg Gate resistance A 5.1 VSD Reverse Transfer Capacitance -2.1 7.4 TJ=125°C gFS Crss µA VDS=0V, VGS=±25V VDS=-5V, ID=-15A Coss Units VDS=0V, VGS=±20V VGS=-20V, ID=-15A Static Drain-Source On-Resistance Max V VDS=-30V, VGS=0V IDSS RDS(ON) Typ 2527 VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Total Gate Charge Qg VGS=-10V, VDS=-15V, ID=-15A S -1 V -4.2 A 3033 pF 583 2.1 mΩ pF 397 556 pF 4.3 6.4 Ω 47 57 nC Qgs Gate Source Charge 8 nC Qgd tD(on) Gate Drain Charge 14 nC Turn-On DelayTime 12 tr Turn-On Rise Time ns 8 ns tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time 54 ns 87 ns IF=-15A, dI/dt=100A/µs 26.1 Qrr Body Diode Reverse Recovery Charge IF=-15A, dI/dt=100A/µs 12.3 Body Diode Reverse Recovery Time VGS=-10V, VDS=-15V, RL=1.0Ω, RGEN=3Ω 32 ns nC A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. F. The current rating is based on the t≤ 10s junction to ambient thermal resistance rating. Note *: This device is guaranteed RG 100% tested after date code 8V11 (Jan 1st 2008) Rev10: May. 2012 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE Alpha & Omega Semiconductor, Ltd. www.aosmd,com AO4423 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 50 50 -4.5V VDS=-5V -4V -10V 40 40 -6V 125°C 30 -ID(A) -ID (A) 30 20 25°C 20 -3.5V 10 10 VGS=-3V 0 0 0 1 2 3 4 5 2 3 3.5 4 4.5 5 1.7 Normalized On-Resistance RDS(ON) (mΩ Ω) 10 VGS=-6V 8 VGS=-10V 6 VGS=-20V 1.6 VGS=-20V ID = -15A 1.5 VGS=-10V ID = -15A 1.4 1.3 1.2 VGS=-6V ID = -10A 1.1 1.0 0.9 4 0 5 10 15 20 25 0 30 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage -15 1.0E+01 16 -12.8 ID=-15A 1.0E+00 14 1.0E-01 12 -IS (A) RDS(ON) (mΩ Ω) 2.5 -VGS(Volts) Figure 2: Transfer Characteristics -VDS (Volts) Fig 1: On-Region Characteristics 125°C 10 125°C 1.0E-02 1.0E-03 8 1.0E-04 6 25°C 1.0E-05 25°C 4 4 8 12 16 20 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 1.0E-06 0.0 0.2 0.4 0.6 0.8 1.0 -VSD (Volts) Figure 6: Body-Diode Characteristics www.aosmd,com AO4423 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 4000 10 3000 Capacitance (pF) -VGS (Volts) 3500 VDS=-15V ID=-15A 8 6 4 Ciss 2500 2000 1500 Coss 1000 2 500 0 10 20 30 40 -Qg (nC) Figure 7: Gate-Charge Characteristics RDS(ON) limited 30 TJ(Max)=150°C TA=25°C 10µs 1000 100µs 1.0 1ms 10ms 10s TJ(Max)=150°C TA=25°C Power (W) -ID (Amps) 20 10000 1s 100 10 0.1s DC 1 0.0 0.1 1 10 0.00001 100 -VDS (Volts) Figure 9: Maximum Forward Biased Safe 0.001 0.1 10 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) -15 10 Zθ JA Normalized Transient Thermal Resistance 10 -VDS (Volts) Figure 8: Capacitance Characteristics 10.0 0.1 0 50 1000.0 100.0 Crss 0 0 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=40°C/W -12.8 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton T Single Pulse 0.01 0.00001 0.0001 0.001 0.01 Pulse Width 0.1(s) 1 10 Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. 100 1000 www.aosmd,com