AOSMD AO4423 30v p-channel mosfet Datasheet

AO4423
30V P-Channel MOSFET
General Description
Product Summary
The AO4423 uses advanced trench technology to provide
excellent RDS(ON), and ultra-low low gate charge with a
25V gate rating. This device is suitable for use as a load
switch or in PWM applications.
VDS (V) = -30V
ID = -17A
RDS(ON) < 6.2mΩ
RDS(ON) < 7.2mΩ
(VGS = -20V)
(VGS = -20V)
(VGS = -10V)
ESD Protected
100% UIS tested
100% Rg tested (note *)
SOIC-8
Top View
D
D
D
Bottom View
D
D
G
G
S
S
S
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current AF
Units
V
VGS
±25
V
ID
-14
IDM
-182
TA=25°C
TA=70°C
Pulsed Drain Current B
TA=25°C
Power Dissipation A
Maximum
-30
TA=70°C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient AF
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
Alpha & Omega Semiconductor, Ltd.
-17
3.1
PD
W
2
TJ, TSTG
-55 to 150
Symbol
t ≤ 10s
Steady-State
Steady-State
A
RθJA
RθJL
Typ
26
50
14
°C
Max
40
75
24
Units
°C/W
°C/W
°C/W
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AO4423
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Conditions
Min
ID=-250µA, VGS=0V
-30
-1
Zero Gate Voltage Drain Current
IGSS
Gate-Body leakage current
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=-250µA
-1.5
ID(ON)
On state drain current
VGS=-10V, VDS=-5V
-182
TJ=55°C
-5
±1
µA
±10
µA
-2.6
V
6.2
9
VGS=-10V, ID=-15A
5.9
7.2
mΩ
VGS=-6V, ID=-10A
7.5
9.5
mΩ
Forward Transconductance
Diode Forward Voltage
IS=-1A,VGS=0V
IS
Maximum Body-Diode Continuous Current
48
-0.71
DYNAMIC PARAMETERS
Input Capacitance
Ciss
Output Capacitance
Rg
Gate resistance
A
5.1
VSD
Reverse Transfer Capacitance
-2.1
7.4
TJ=125°C
gFS
Crss
µA
VDS=0V, VGS=±25V
VDS=-5V, ID=-15A
Coss
Units
VDS=0V, VGS=±20V
VGS=-20V, ID=-15A
Static Drain-Source On-Resistance
Max
V
VDS=-30V, VGS=0V
IDSS
RDS(ON)
Typ
2527
VGS=0V, VDS=-15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Total Gate Charge
Qg
VGS=-10V, VDS=-15V, ID=-15A
S
-1
V
-4.2
A
3033
pF
583
2.1
mΩ
pF
397
556
pF
4.3
6.4
Ω
47
57
nC
Qgs
Gate Source Charge
8
nC
Qgd
tD(on)
Gate Drain Charge
14
nC
Turn-On DelayTime
12
tr
Turn-On Rise Time
ns
8
ns
tD(off)
Turn-Off DelayTime
tf
trr
Turn-Off Fall Time
54
ns
87
ns
IF=-15A, dI/dt=100A/µs
26.1
Qrr
Body Diode Reverse Recovery Charge IF=-15A, dI/dt=100A/µs
12.3
Body Diode Reverse Recovery Time
VGS=-10V, VDS=-15V, RL=1.0Ω,
RGEN=3Ω
32
ns
nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with
T A=25°C. The value in any given application depends on the user's specific board design.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating.
F. The current rating is based on the t≤ 10s junction to ambient thermal resistance rating.
Note *: This device is guaranteed RG 100% tested after date code 8V11 (Jan 1st 2008)
Rev10: May. 2012
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE
Alpha & Omega Semiconductor, Ltd.
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AO4423
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
50
50
-4.5V
VDS=-5V
-4V
-10V
40
40
-6V
125°C
30
-ID(A)
-ID (A)
30
20
25°C
20
-3.5V
10
10
VGS=-3V
0
0
0
1
2
3
4
5
2
3
3.5
4
4.5
5
1.7
Normalized On-Resistance
RDS(ON) (mΩ
Ω)
10
VGS=-6V
8
VGS=-10V
6
VGS=-20V
1.6
VGS=-20V
ID = -15A
1.5
VGS=-10V
ID = -15A
1.4
1.3
1.2
VGS=-6V
ID = -10A
1.1
1.0
0.9
4
0
5
10
15
20
25
0
30
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
-ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
-15
1.0E+01
16
-12.8
ID=-15A
1.0E+00
14
1.0E-01
12
-IS (A)
RDS(ON) (mΩ
Ω)
2.5
-VGS(Volts)
Figure 2: Transfer Characteristics
-VDS (Volts)
Fig 1: On-Region Characteristics
125°C
10
125°C
1.0E-02
1.0E-03
8
1.0E-04
6
25°C
1.0E-05
25°C
4
4
8
12
16
20
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
1.0E-06
0.0
0.2
0.4
0.6
0.8
1.0
-VSD (Volts)
Figure 6: Body-Diode Characteristics
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AO4423
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
4000
10
3000
Capacitance (pF)
-VGS (Volts)
3500
VDS=-15V
ID=-15A
8
6
4
Ciss
2500
2000
1500
Coss
1000
2
500
0
10
20
30
40
-Qg (nC)
Figure 7: Gate-Charge Characteristics
RDS(ON)
limited
30
TJ(Max)=150°C
TA=25°C
10µs
1000
100µs
1.0
1ms
10ms
10s
TJ(Max)=150°C
TA=25°C
Power (W)
-ID (Amps)
20
10000
1s
100
10
0.1s
DC
1
0.0
0.1
1
10
0.00001
100
-VDS (Volts)
Figure 9: Maximum Forward Biased Safe
0.001
0.1
10
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
-15
10
Zθ JA Normalized Transient
Thermal Resistance
10
-VDS (Volts)
Figure 8: Capacitance Characteristics
10.0
0.1
0
50
1000.0
100.0
Crss
0
0
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=40°C/W
-12.8
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
PD
0.1
Ton
T
Single Pulse
0.01
0.00001
0.0001
0.001
0.01 Pulse Width
0.1(s)
1
10
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
100
1000
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