Rohm EMH2 Npn 100ma 50v complex digital transistors (bias resistor built-in transistors) Datasheet

EMH2 / UMH2N / IMH2A
Datasheet
NPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors)
lOutline
Parameter
VCC
IC(MAX.)
R1
R2
Tr1 and Tr2
EMT6
UMT6
(6)
50V
100mA
47kW
47kW
(1)
(2)
(6)
(5)
(4)
(1)
(3)
EMH2
(SC-107C)
(2)
(5)
(4)
(3)
UMH2N
SOT-353 (SC-88)
SMT6
(4)
lFeatures
1) Built-In Biasing Resistors, R1 = R2 = 47kW.
(3)
2) Two DTC144E chips in one package.
3) Built-in bias resistors enable the configuration of
an inverter circuit without connecting external
input resistors (see inner circuit).
4) The bias resistors consist of thin-film resistors
with complete isolation to allow negative biasing
of the input. They also have the advantage of
completely eliminating parasitic effects.
5) Only the on/off conditions need to be set for
operation, making the circuit design easy.
6) Lead Free/RoHS Compliant.
(2)
(5)
(6)
(1)
IMH2A
SOT-457 (SC-74)
lInner circuit
EMH2 / UMH2N
lApplication
Inverter circuit, Interface circuit, Driver circuit
IMH2A
OUT
(6)
IN
(5)
GND
(4)
OUT
(4)
IN
(5)
GND
(6)
(1)
GND
(2)
IN
(3)
OUT
(3)
GND
(2)
IN
(1)
OUT
lPackaging specifications
Package
Package
size
(mm)
Taping
code
EMH2
EMT6
1616
T2R
180
8
8,000
H2
UMH2N
UMT6
2021
TR
180
8
3,000
H2
IMH2A
SMT6
2928
T108
180
8
3,000
H2
Part No.
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© 2012 ROHM Co., Ltd. All rights reserved.
1/7
Basic
Reel size Tape width
ordering
(mm)
(mm)
unit (pcs)
Marking
2012.06 - Rev.C
Data Sheet
EMH2 / UMH2N / IMH2A
lAbsolute maximum ratings (Ta = 25°C)
<For Tr1 and Tr2 in common>
Parameter
Symbol
Values
Unit
Supply voltage
VCC
50
V
Input voltage
VIN
-10 to +40
V
Output current
IO
30
mA
IC(MAX.)*1
100
mA
150 (Total)*3
mW
300 (Total)*4
mW
Tj
150
°C
Tstg
-55 to +150
°C
Collector current
Power dissipation
EMH2 / UMH2N
PD
IMH2A
Junction temperature
Range of storage temperature
*2
lElectrical characteristics(Ta = 25°C)
<For Tr1 and Tr2 in common>
Parameter
Symbol
Conditions
Min.
Typ.
Max.
Unit
VI(off)
VCC = 5V, IO = 100mA
-
-
0.5
VI(on)
VO = 0.3V, IO = 2mA
3.0
-
-
VO(on)
IO / II = 10mA / 0.5mA
-
0.1
0.3
V
VI = 5V
-
-
0.18
mA
IO(off)
VCC = 50V, VI = 0V
-
-
0.5
mA
DC current gain
GI
VO = 5V, IO = 5mA
68
-
-
-
Input resistance
R1
-
32.9
47
61.1
kW
Resistance ratio
R2/R1
-
0.8
1
1.2
-
-
250
-
MHz
Input voltage
Output voltage
Input current
Output current
Transition frequency
II
fT *1
VCE = 10V, IE = -5mA,
f = 100MHz
V
*1 Characteristics of built-in transistor
*2 Each terminal mounted on a reference footprint
*3 120mW per element must not be exceeded.
*4 200mW per element must not be exceeded.
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2/7
2012.06 - Rev.C
Data Sheet
EMH2 / UMH2N / IMH2A
lElectrical characteristic curves(Ta = 25°C)
Fig.2 Output current vs. input voltage
(OFF characteristics)
INPUT VOLTAGE : VI(on) [V]
OUTPUT CURRENT : IO [A]
Fig.1 Input voltage vs. output current
(ON characteristics)
OUTPUT CURRENT : IO [A]
INPUT VOLTAGE : VI(off)[V]
Fig.4 DC current gain vs. output current
Fig.3 Output current vs. output voltage
II=
30
Ta=25ºC
120μA
90μA
20
80μA
70μA
60μA
10
50μA
40μA
30μA
0
DC CURRENT GAIN : GI
OUTPUT CURRENT : IO [mA]
110μA
100μA
0A
0
5
10
OUTPUT CURRENT : IO [A]
OUTPUT VOLTAGE : VO [V]
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3/7
2012.06 - Rev.C
Data Sheet
EMH2 / UMH2N / IMH2A
lElectrical characteristic curves(Ta = 25°C)
OUTPUT VOLTAGE : VO(on) [V]
Fig.5 Output voltage vs. output current
OUTPUT CURRENT : IO [A]
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© 2012 ROHM Co., Ltd. All rights reserved.
4/7
2012.06 - Rev.C
Data Sheet
EMH2 / UMH2N / IMH2A
lDimensions (Unit : mm)
D
EMT6
A
x
c
S A
Lp
Lp
HE
L
E
L
b
A1
y S
l1
A
e1
e
S
e
b2
Patterm of terminal position areas
DIM
A1
A
b
c
D
E
e
HE
L
Lp
x
y
DIM
e1
b2
l1
MILIMETERS
MIN
MAX
0.00
0.10
0.45
0.55
0.17
0.27
0.08
0.18
1.50
1.70
1.10
1.30
0.50
1.50
1.70
0.10
0.30
0.35
0.10
0.10
MILIMETERS
MIN
MAX
1.25
0.37
0.45
INCHES
MIN
0
0.018
0.007
0.003
0.059
0.043
MAX
0.004
0.022
0.011
0.007
0.067
0.051
0.02
0.059
0.004
-
0.067
0.012
0.014
0.004
0.004
INCHES
MIN
MAX
0.049
-
0.015
0.018
Dimension in mm/inches
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© 2012 ROHM Co., Ltd. All rights reserved.
5/7
2012.06 - Rev.C
Data Sheet
EMH2 / UMH2N / IMH2A
lDimensions (Unit : mm)
D
A
e
c
x
Lp
A3
S A
e
l1
A1
y S
e1
A
b
HE
E
Q
L1
UMT6
S
b2
Patterm of terminal position areas
DIM
A
A1
A3
b
c
D
E
e
HE
L1
Lp
Q
x
y
DIM
e1
b2
l1
MILIMETERS
MIN
MAX
0.80
1.00
0.00
0.10
0.25
0.15
0.30
0.10
0.20
1.90
2.10
1.15
1.35
0.65
2.00
2.20
0.20
0.50
0.25
0.55
0.10
0.30
0.10
0.10
MILIMETERS
MIN
MAX
1.55
0.40
0.65
Dimension in mm/inches
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6/7
INCHES
MIN
0
MAX
0.039
0.004
0.01
0.006
0.004
0.075
0.045
0.012
0.008
0.083
0.053
0.03
0.079
0.008
0.01
0.004
-
0.087
0.02
0.022
0.012
0.004
0.004
INCHES
MIN
MAX
0.06
-
0.016
0.026
2012.06 - Rev.C
Data Sheet
EMH2 / UMH2N / IMH2A
lDimensions (Unit : mm)
SMT6
D
A
e
c
L1
Lp
HE
E
Q
b
A3
x
S A
y S
A1
l1
A
e1
e
S
b2
Patterm of terminal position areas
DIM
A
A1
A3
b
c
D
E
e
HE
L1
Lp
Q
x
y
DIM
e1
b2
l1
MILIMETERS
MIN
MAX
1.00
1.30
0.00
0.10
0.25
0.25
0.40
0.09
0.25
2.80
3.00
1.50
1.80
0.95
2.60
3.00
0.30
0.60
0.40
0.70
0.20
0.30
0.20
0.10
MILIMETERS
MIN
MAX
2.10
0.60
0.90
Dimension in mm/inches
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7/7
INCHES
MIN
0.039
0
MAX
0.051
0.004
0.01
0.01
0.004
0.11
0.059
0.016
0.01
0.118
0.071
0.04
0.102
0.012
0.016
0.008
-
0.118
0.024
0.028
0.012
0.008
0.004
INCHES
MIN
MAX
0.08
-
0.024
0.035
2012.06 - Rev.C
Notice
Notes
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illustrate the standard usage and operations of the Products. The peripheral conditions must
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However, should you incur any damage arising from any inaccuracy or misprint of such
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R1120A
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