Spec. No. : C650N3 Issued Date : 2011.01.06 Revised Date : 2011.10.04 Page No. : 1/6 CYStech Electronics Corp. NPN Digital Transistors (Built-in Resistors) DTC623TN3 Features • Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). • The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input. They also have the advantage of almost completely eliminating parasitic effects. • Only the on/off conditions need to be set for operation, making device design easy. • Complements the DTA623TN3. • Pb-free lead plating & halogen-free package. Equivalent Circuit Outline DTC623TN3 SOT-23 C B C R1 E R1=2.2 kΩ B：Base C：Collector E：Emitter B E Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature DTC623TN3 Symbol Limits Unit VCBO VCEO VEBO IC Pd Tj Tstg 20 20 12 600 200 150 -55~+150 V V V mA mW °C °C CYStek Product Specification Spec. No. : C650N3 Issued Date : 2011.01.06 Revised Date : 2011.10.04 Page No. : 2/6 CYStech Electronics Corp. Electrical Characteristics (Ta=25°C) Parameter Symbol Min. Typ. Max. Unit Test Conditions Collector-Base Breakdown Voltage VCBO 20 - - V IC=50μA Collector-Emitter Breakdown Voltage VCEO 20 - - V IC=1mA Emitter-Base Breakdown Voltage VEBO 12 - - V IE=50μA Collector-Base Cutoff Current ICBO - - 0.5 μA VCB=20V Emitter-Base Cutoff Current IEBO - - 0.5 μA VEB=12V VCE(sat) - 40 150 mV IC=50mA, IB=2.5mA DC Current Gain hFE 820 - 2700 - Input Resistance R 1.54 2.2 2.86 kΩ Transition Frequency fT - 150 - Ron - 0.23 - Collector-Emitter Saturation Voltage Output “ON” Resistance VCE=5V, IC=50mA - MHz VCE=10V, IC=50mA, f=100MHz * Ω VI=5V, RL=1kΩ, f=1kHz * Transition frequency of the device Ordering Information Device DTC623TN3 DTC623TN3 Package SOT-23 (Pb-free lead plating & halogen-free package ) Shipping Marking 3000 pcs / Tape & Reel R02 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C650N3 Issued Date : 2011.01.06 Revised Date : 2011.10.04 Page No. : 3/6 Typical Characteristics Current Gain vs Collector Current Saturation Voltage vs Collector Current 10000 1000 VCE=5V IC=20IB Saturation Voltage---(mV) Current Gain---HFE 125℃ 1000 75℃ 25℃ 100 100 125℃ 75°C 25°C 10 1 0.1 1 10 100 Collector Current---IC(mA) 1000 0.1 10 100 Collector Current---IC(mA) 1000 Saturation Voltage vs Collector Current Saturation Voltage vs Collector Current 10000 1000 IC=500IB Saturation Voltage---(mV) IC=100IB Saturation Voltage---(mV) 1 125°C 75℃ 25°C 100 10 125℃ 75°C 25°C 1000 100 10 0.1 1 10 100 Collector Current---IC(mA) 0.1 1000 1 10 100 Collector Current---IC(mA) 1000 Saturation Voltage vs Collector Current •Ron measurement circuit On Resistance---Ron(Ω) 1000 Ta=25°C f=1kHz RL =1kΩ 100 10 1 0.1 0.01 0.1 DTC623TN3 1 10 Input Voltage---VI(V) 100 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C650N3 Issued Date : 2011.01.06 Revised Date : 2011.10.04 Page No. : 4/6 Reel Dimension Carrier Tape Dimension DTC623TN3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C650N3 Issued Date : 2011.01.06 Revised Date : 2011.10.04 Page No. : 5/6 Recommended wave soldering condition Product Pb-free devices Peak Temperature 260 +0/-5 °C Soldering Time 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5°C of actual peak temperature(tp) Ramp down rate Time 25 °C to peak temperature Sn-Pb eutectic Assembly Pb-free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 240 +0/-5 °C 217°C 60-150 seconds 260 +0/-5 °C 10-30 seconds 20-40 seconds 6°C/second max. 6 minutes max. 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. DTC623TN3 CYStek Product Specification Spec. No. : C650N3 Issued Date : 2011.01.06 Revised Date : 2011.10.04 Page No. : 6/6 CYStech Electronics Corp. SOT-23 Dimension Marking: A L 3 B S 2 1 G V 3-Lead SOT-23 Plastic Surface Mounted Package CYStek Package Code: N3 C D K H Style : Pin 1.Base 2.Emitter 3.Collector J *:Typical Inches Min. Max. 0.1102 0.1204 0.0472 0.0630 0.0335 0.0512 0.0118 0.0197 0.0669 0.0910 0.0005 0.0040 DIM A B C D G H Millimeters Min. Max. 2.80 3.04 1.20 1.60 0.89 1.30 0.30 0.50 1.70 2.30 0.013 0.10 DIM J K L S V Inches Min. Max. 0.0034 0.0070 0.0128 0.0266 0.0335 0.0453 0.0830 0.1083 0.0098 0.0256 Millimeters Min. Max. 0.085 0.177 0.32 0.67 0.85 1.15 2.10 2.75 0.25 0.65 Notes : 1.Controlling dimension : millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material : • Lead : Pure tin plated. • Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0. Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYSrek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. DTC623TN3 CYStek Product Specification