APT30F50B
APT30F50S
500V, 30A, 0.19Ω Max, trr ≤230ns
N-Channel FREDFET
Power MOS 8™ is a high speed, high voltage N-channel switch-mode power MOSFET.
This 'FREDFET' version has a drain-source (body) diode that has been optimized for
high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft
recovery, and high recovery dv/dt capability. Low gate charge, high gain, and a greatly
reduced ratio of Crss/Ciss result in excellent noise immunity and low switching loss. The
intrinsic gate resistance and capacitance of the poly-silicon gate structure help control
di/dt during switching, resulting in low EMI and reliable paralleling, even when switching
at very high frequency.
TO
-2
47
D3PAK
APT30F50B
APT30F50S
Single die FREDFET
D
G
S
TYPICAL APPLICATIONS
FEATURES
• Fast switching with low EMI
• ZVS phase shifted and other full bridge
• Low trr for high reliability
• Half bridge
• Ultra low Crss for improved noise immunity
• PFC and other boost converter
• Low gate charge
• Buck converter
• Avalanche energy rated
• Single and two switch forward
• RoHS compliant
• Flyback
Absolute Maximum Ratings Symbol
ID
Parameter
Unit
Ratings
Continuous Drain Current @ TC = 25°C
30
Continuous Drain Current @ TC = 100°C
19
A
IDM
Pulsed Drain Current
VGS
Gate-Source Voltage
±30
V
EAS
Single Pulse Avalanche Energy 2
615
mJ
IAR
Avalanche Current, Repetitive or Non-Repetitive
14
A
1
90
Thermal and Mechanical Characteristics
Max
Unit
W
PD
Total Power Dissipation @ TC = 25°C
415
RθJC
Junction to Case Thermal Resistance
0.30
RθCS
Case to Sink Thermal Resistance, Flat, Greased Surface
TJ,TSTG
Operating and Storage Junction Temperature Range
TL
Soldering Temperature for 10 Seconds (1.6mm from case)
WT
Package Weight
Torque
Mounting Torque ( TO-247 Package), 6-32 or M3 screw
MicrosemiWebsite-http://www.microsemi.com
0.15
-55
150
300
°C/W
°C
0.22
oz
6.2
g
10
in·lbf
1.1
N·m
05-2009
Typ
Rev C
Min
Characteristic
050-8133
Symbol
Static Characteristics
TJ = 25°C unless otherwise specified
Symbol
Parameter
Test Conditions
VBR(DSS)
Drain-Source Breakdown Voltage
VGS = 0V, ID = 250µA
∆VBR(DSS)/∆TJ
Drain-Source On Resistance
VGS(th)
Gate-Source Threshold Voltage
∆VGS(th)/∆TJ
VGS = VDS, ID = 1mA
Threshold Voltage Temperature Coefficient
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate-Source Leakage Current
Dynamic Characteristics
Symbol
VGS = 10V, ID = 14A
3
Forward Transconductance
TJ = 25°C
VGS = 0V
TJ = 125°C
VGS = ±30V
Min
Test Conditions
VDS = 50V, ID = 14A
Typ
Output Capacitance
22
4525
60
485
280
142
115
26
50
20
23
50
17
Ciss
Input Capacitance
Crss
Reverse Transfer Capacitance
Coss
Max
0.19
5
Unit
V
V/°C
Ω
V
mV/°C
250
1000
±100
µA
nA
TJ = 25°C unless otherwise specified
Parameter
gfs
VDS = 500V
Typ
500
0.60
0.17
2.5
4
-10
Reference to 25°C, ID = 250µA
Breakdown Voltage Temperature Coefficient
RDS(on)
Min
AP30F50B_S
VGS = 0V, VDS = 25V
f = 1MHz
Co(cr)
4
Effective Output Capacitance, Charge Related
Co(er)
5
Effective Output Capacitance, Energy Related
Max
Unit
S
pF
VGS = 0V, VDS = 0V to 333V
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
td(on)
Turn-On Delay Time
tr
td(off)
tf
Current Rise Time
Turn-Off Delay Time
VGS = 0 to 10V, ID = 14A,
VDS = 250V
Resistive Switching
VDD = 333V, ID = 14A
RG = 4.7Ω 6 , VGG = 15V
Current Fall Time
nC
ns
Source-Drain Diode Characteristics
Symbol
IS
ISM
VSD
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 1
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Irrm
Reverse Recovery Current
dv/dt
Peak Recovery dv/dt
Test Conditions
Min
D
MOSFET symbol
showing the
integral reverse p-n
junction diode
(body diode)
Typ
Max
30
S
90
A
G
ISD = 14A, TJ = 25°C, VGS = 0V
TJ = 25°C
TJ = 125°C
ISD = 14A 3
TJ = 25°C
diSD/dt = 100A/µs
TJ = 125°C
VDD = 100V
TJ = 25°C
Unit
TJ = 125°C
0.77
1.88
7.7
10.7
ISD ≤ 14A, di/dt ≤1000A/µs, VDD = 333V, TJ = 125°C
1.0
230
420
V
ns
µC
A
20
V/ns
1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature.
2 Starting at TJ = 25°C, L = 6.28mH, RG = 25Ω, IAS = 14A.
050-8133
Rev C
05-2009
3 Pulse test: Pulse Width < 380µs, duty cycle < 2%.
4 Co(cr) is defined as a fixed capacitance with the same stored charge as COSS with VDS = 67% of V(BR)DSS.
5 Co(er) is defined as a fixed capacitance with the same stored energy as COSS with VDS = 67% of V(BR)DSS. To calculate Co(er) for any value of
VDS less than V(BR)DSS, use this equation: Co(er) = -1.05E-7/VDS^2 + 2.44E-8/VDS + 6.99E-11.
6 RG is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452)
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
100
V
90
GS
= 10V
T = 125°C
TJ = -55°C
ID, DRIAN CURRENT (A)
= 7 &10V
6.5V
60
TJ = 25°C
50
40
30
20
TJ = 150°C
35
6V
30
25
20
5.5V
15
10
5V
5
TJ = 125°C
0
0
5
10
15
20
25
VDS(ON), DRAIN-TO-SOURCE VOLTAGE (V)
0
Figure 1, Output Characteristics
2.5
Figure 2, Output Characteristics
90
NORMALIZED TO
VDS> ID(ON) x RDS(ON) MAX.
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
80
VGS = 10V @ 14A
ID, DRAIN CURRENT (A)
2.0
1.5
1.0
0.5
5
10
15
20
25
30
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
70
60
TJ = -55°C
50
TJ = 25°C
40
TJ = 125°C
30
20
10
0
0
-55 -25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 3, RDS(ON) vs Junction Temperature
0
1
2
3
4
5
6
7
8
VGS, GATE-TO-SOURCE VOLTAGE (V)
Figure 4, Transfer Characteristics
7,000
35
TJ = -55°C
Ciss
TJ = 25°C
25
C, CAPACITANCE (pF)
TJ = 125°C
20
15
10
1,000
Coss
100
5
VGS, GATE-TO-SOURCE VOLTAGE (V)
16
5
10
15
20
25
ID, DRAIN CURRENT (A)
Figure 5, Gain vs Drain Current
100
200
300
400
500
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 6, Capacitance vs Drain-to-Source Voltage
12
VDS = 100V
10
VDS = 250V
8
6
VDS = 400V
4
2
0
0
90
ID = 14A
14
0
10
30
20
40 60 80 100 120 140 160
Qg, TOTAL GATE CHARGE (nC)
Figure 7, Gate Charge vs Gate-to-Source Voltage
80
70
60
50
TJ = 25°C
40
TJ = 150°C
30
20
10
0
0
0.3
0.6
0.9
1.2
1.5
VSD, SOURCE-TO-DRAIN VOLTAGE (V)
Figure 8, Drain Current vs Source-to-Drain Voltage
05-2009
0
ISD, REVERSE DRAIN CURRENT(A)
0
Crss
Rev C
gfs, TRANSCONDUCTANCE
30
050-8133
ID, DRAIN CURRENT (A)
GS
40
70
10
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
V
J
45
80
0
APT30F50B_S
50
APT30F50B_S
100
100
IDM
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
IDM
10
13µs
100µs
1ms
10ms
Rds(on)
1
100ms
10
Rds(on)
0.1
1
Scaling for Different Case & Junction
Temperatures:
ID = ID(T = 25°C)*(TJ - TC)/125
0.1
10
100
800
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 9, Forward Safe Operating Area
100ms
DC line
TJ = 150°C
TC = 25°C
1
DC line
TJ = 125°C
TC = 75°C
13µs
100µs
1ms
10ms
C
1
10
100
800
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 10, Maximum Forward Safe Operating Area
0.30
D = 0.9
0.25
0.7
0.20
0.5
0.15
0.3
0.10
0.05
0
Note:
PDM
ZθJC, THERMAL IMPEDANCE (°C/W)
0.35
t2
t1 = Pulse Duration
SINGLE PULSE
0.1
t
Duty Factor D = 1/t2
Peak TJ = PDM x ZθJC + TC
0.05
10
t1
10-4
10-3
10-2
10-1
RECTANGULAR PULSE DURATION (seconds)
Figure 11. Maximum Effective Transient Thermal Impedance Junction-to-Case vs Pulse Duration
-5
1.0
D3PAK Package Outline
TO-247 (B) Package Outline
15.49 (.610)
16.26 (.640)
6.15 (.242) BSC
5.38 (.212)
6.20 (.244)
Drain
(Heat Sink)
e3 100% Sn Plated
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
4.98 (.196)
5.08 (.200)
1.47 (.058)
1.57 (.062)
15.95 (.628)
16.05(.632)
Drain
13.79 (.543)
13.99(.551)
Revised
4/18/95
20.80 (.819)
21.46 (.845)
1.04 (.041)
1.15(.045)
05-2009
4.50 (.177) Max.
Rev C
Revised
8/29/97
11.51 (.453)
11.61 (.457)
3.50 (.138)
3.81 (.150)
0.46 (.018)
0.56 (.022) {3 Plcs}
050-8133
13.41 (.528)
13.51(.532)
0.40 (.016)
0.79 (.031)
2.21 (.087)
2.59 (.102)
19.81 (.780)
20.32 (.800)
2.87 (.113)
3.12 (.123)
1.65 (.065)
2.13 (.084)
1.01 (.040)
1.40 (.055)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
Gate
Drain
Source
0.020 (.001)
0.178 (.007)
2.67 (.105)
2.84 (.112)
1.27 (.050)
1.40 (.055)
1.22 (.048)
1.32 (.052)
1.98 (.078)
2.08 (.082)
5.45 (.215) BSC
{2 Plcs.}
Source
Drain
Gate
Dimensions in Millimeters (Inches)
Microsemi's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786
5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
3.81 (.150)
4.06 (.160)
(Base of Lead)
Heat Sink (Drain)
and Leads
are Plated