Am29DL400B Data Sheet RETIRED PRODUCT This product has been retired and is not recommended for designs. For new and current designs, S29AL004D supersedes Am29DL400B and is the factory-recommended migration path. Please refer to the S29AL004D datasheet for specifications and ordering information. Availability of this document is retained for reference and historical purposes only. April 2005 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and Fujitsu. Continuity of Specifications There is no change to this datasheet as a result of offering the device as a Spansion product. Any changes that have been made are the result of normal datasheet improvement and are noted in the document revision summary, where supported. Future routine revisions will occur when appropriate, and changes will be noted in a revision summary. For More Information Please contact your local AMD or Fujitsu sales office for additional information about Spansion memory solutions. Publication Number 21606 Revision E Amendment +4 Issue Date June 7, 2005 THIS PAGE LEFT INTENTIONALLY BLANK. Am29DL400B 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory This product has been retired and is not recommended for designs. For new and current designs, S29AL004D supersedes Am29DL400B and is the factory-recommended migration path. Please refer to the S29AL004D datasheet for specifications and ordering information. Availability of this document is retained for reference and historical purposes only. DISTINCTIVE CHARACTERISTICS ■ Simultaneous Read/Write operations — Host system can program or erase in one bank, then immediately and simultaneously read from the other bank — Zero latency between read and write operations — Read-while-erase — Read-while-program ■ Single power supply operation — 2.7 to 3.6 volt read and write operations for battery-powered applications ■ Manufactured on 0.32 µm process technology ■ High performance — Access times as fast as 70 ns ■ Low current consumption (typical values at 5 MHz) — 7 mA active read current — 21 mA active read-while-program or readwhile-erase current — 17 mA active program-while-erase-suspended current — 200 nA in standby mode — 200 nA in automatic sleep mode — Standard tCE chip enable access time applies to transition from automatic sleep mode to active mode ■ Flexible sector architecture — Two 16 Kword, two 8 Kword, four 4 Kword, and six 32 Kword sectors in word mode — Two 32 Kbyte, two 16 Kbyte, four 8 Kbyte, and six 64 Kbyte sectors in byte mode — Any combination of sectors can be erased — Supports full chip erase ■ Unlock Bypass Program Command — Reduces overall programming time when issuing multiple program command sequences ■ Sector protection — Hardware method of locking a sector to prevent any program or erase operation within that sector — Sectors can be locked in-system or via programming equipment — Temporary Sector Unprotect feature allows code changes in previously locked sectors ■ Top or bottom boot block configurations available ■ Embedded Algorithms — Embedded Erase algorithm automatically pre-programs and erases sectors or entire chip — Embedded Program algorithm automatically programs and verifies data at specified address ■ Minimum 1 million program/erase cycles guaranteed per sector ■ 20-year data retention at 125° C — Reliable operation for the life of the system ■ Package options — 44-pin SO — 48-pin TSOP ■ Compatible with JEDEC standards — Pinout and software compatible with single-power-supply flash standard — Superior inadvertent write protection ■ Data# Polling and Toggle Bits — Provides a software method of detecting program or erase cycle completion ■ Ready/Busy# output (RY/BY#) — Hardware method for detecting program or erase cycle completion ■ Erase Suspend/Erase Resume — Suspends or resumes erasing sectors to allow reading and programming in other sectors — No need to suspend if sector is in the other bank ■ Hardware reset pin (RESET#) — Hardware method of resetting the device to reading array data This Data Sheet states AMD’s current technical specifications regarding the Products described herein. This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. Publication# 21606 Rev: E Amendment/+4 Issue Date: June 7, 2005 GENERAL DESCRIPTION The Am29DL400B is an 4 Mbit, 3.0 volt-only flash memory device, organized as 262,144 words or 524,288 bytes. The device is offered in 44-pin SO and 48-pin TSOP packages. The word-wide (x16) data appears on DQ0–DQ15; the byte-wide (x8) data appears on DQ0–DQ7. This device requires only a single 3.0 volt VCC supply to perform read, program, and erase operations. A standard EPROM programmer can also be used to program and erase the device. The standard device offers access times of 70, 80, 90, and 120 ns, allowing high-speed microprocessors to operate without wait states. Standard control pins—chip enable (CE#), write enable (WE#), and output enable (OE#)—control read and write operations, and avoid bus contention issues. The device requires only a single 3.0 volt power supply for both read and write functions. Internally generated and regulated voltages are provided for the program and erase operations. Simultaneous Read/Write Operations with Zero Latency The Simultaneous Read/Write architecture provides simultaneous operation by dividing the memory space into two banks. Bank 1 contains boot/parameter sectors, and Bank 2 consists of larger, code sectors of uniform size. The device can improve overall system performance by allowing a host system to program or erase in one bank, then immediately and simultaneously read from the other bank, with zero latency. This releases the system from waiting for the completion of program or erase operations. Am29DL400B Features The device offers complete compatibility with the JEDEC single-power-supply Flash command set standard. Commands are written to the command register using standard microprocessor write timings. Register contents serve as input to an internal state machine that controls the erase and programming circuitry. Write cycles also internally latch addresses and data needed for the programming and erase operations. Reading data out of the device is similar to reading from other Flash or EPROM devices. Device programming occurs by executing the prog ra m c o m m a n d s e q u e n c e . T h i s i n i t i a t e s t h e Embedded Program algorithm—an internal algorithm that automatically times the program pulse widths and verifies proper cell margin. The Unlock Bypass mode facilitates faster programming times 2 by requiring only two write cycles to program data instead of four. Device erasure occurs by executing the erase command sequence. This initiates the Embedded Erase algorithm—an internal algorithm that automatically preprograms the array (if it is not already programmed) before executing the erase operation. During erase, the device automatically times the erase pulse widths and verifies proper cell margin. The host system can detect whether a program or erase operation is complete by observing the RY/BY# pin, or by reading the DQ7 (Data# Polling) and DQ6 (toggle) status bits. After a program or erase cycle has been completed, the device automatically returns to reading array data. The sector erase architecture allows memory sectors to be erased and reprogrammed wi thout affecting the data contents of other sectors. The device is fully erased when shipped from the factory. Hardware data protection measures include a low VCC detector that automatically inhibits write operations during power transitions. The hardware sector protection feature disables both program and erase operations in any combination of the sectors of memory. This can be achieved in-system or via programming equipment. The Erase Suspend feature enables the user to put erase on hold for any period of time to read data from, or program data to, any sector within that bank that is not selected for erasure. True background erase can thus be achieved. There is no need to suspend the erase operation if the read data is in the other bank. The hardware RESET# pin terminates any operation in progress and resets the internal state machine to reading array data. The RESET# pin may be tied to the system reset circuitry. A system reset would thus also reset the device to reading array data, enabling the system microprocessor to read the boot-up firmware from the Flash memory. The device offers two power-saving features. When addresses have been stable for a specified amount of time, the device enters the automatic sleep mode. The system can also place the device into the standby mode. Power consumption is greatly reduced in both these modes. AMD’s Flash technology combines years of Flash memory manufacturing experience to produce the hi ghe st l evels of qua lity, rel iabi lity, and cost effectiveness. The device electrically erases all bits within a sector simultaneously via Fowler-Nordheim tunneling. The bytes are programmed one byte or word at a time using hot electron injection. Am29DL400B TABLE OF CONTENTS Product Selector Guide .......................................... Block Diagram......................................................... Connection Diagrams ............................................. Connection diagramS ............................................. Pin Description........................................................ Logic Symbol .......................................................... Ordering Information .............................................. Device Bus Operations........................................... 4 4 5 6 7 7 8 9 RY/BY#: Ready/Busy# ............................................................ 21 DQ6: Toggle Bit I .................................................................... 22 DQ2: Toggle Bit II ................................................................... 22 Reading Toggle Bits DQ6/DQ2 ............................................... 22 Table 1. Am29DL400B Device Bus Operations ................................9 Absolute Maximum Ratings................................. 25 Word/Byte Configuration .......................................................... 9 Requirements for Reading Array Data ..................................... 9 Writing Commands/Command Sequences .............................. 9 Simultaneous Read/Write Operations with Zero Latency ................................................................................... 10 Standby Mode ........................................................................ 10 Automatic Sleep Mode ........................................................... 10 RESET#: Hardware Reset Pin ............................................... 10 Output Disable Mode .............................................................. 11 Figure 7. Maximum Negative Overshoot Waveform ..................... 25 Figure 8. Maximum Positive Overshoot Waveform....................... 25 Table 2. Am29DL400BT Top Boot Sector Architecture .....................................................................................11 Table 3. Am29DL400BB Bottom Boot Sector Architecture .....................................................................................12 Autoselect Mode ..................................................................... 12 Table 4. Am29DL400B Autoselect Codes (High Voltage Method) ..13 Sector Protection/Unprotection ............................................... 13 Temporary Sector Unprotect .................................................. 13 Figure 1. Temporary Sector Unprotect Operation........................... 13 Figure 2. In-System Sector Protect/Unprotect Algorithms ....................................................................................... 14 Hardware Data Protection ...................................................... 15 Low VCC Write Inhibit ............................................................ 15 Write Pulse “Glitch” Protection ............................................... 15 Logical Inhibit .......................................................................... 15 Power-Up Write Inhibit ............................................................ 15 Command Definitions ........................................... 15 Reading Array Data ................................................................ 15 Reset Command ..................................................................... 15 Autoselect Command Sequence ............................................ 15 Byte/Word Program Command Sequence ............................. 16 Unlock Bypass Command Sequence ..................................... 16 Figure 3. Program Operation .......................................................... 17 Chip Erase Command Sequence ........................................... 17 Sector Erase Command Sequence ........................................ 17 Erase Suspend/Erase Resume Commands ........................... 18 Figure 4. Erase Operation............................................................... 19 Command Definitions ........................................... 20 Table 5. Am29DL400B Command Definitions ................................20 Write Operation Status ......................................... 21 DQ7: Data# Polling ................................................................. 21 Figure 5. Data# Polling Algorithm ................................................... 21 Figure 6. Toggle Bit Algorithm........................................................ 23 DQ5: Exceeded Timing Limits ................................................ 23 DQ3: Sector Erase Timer ....................................................... 23 Table 6. Write Operation Status ..................................................... 24 Operating Ranges ................................................. 26 DC Characteristics................................................ 27 CMOS Compatible .................................................................. 27 Figure 9. ICC1 Current vs. Time (Showing Active and Automatic Sleep Currents) ...................................................... 28 Figure 10. Typical ICC1 vs. Frequency ........................................... 28 Test Conditions..................................................... 29 Figure 11. Test Setup.................................................................... 29 Table 7. Test Specifications ........................................................... 29 Key to Switching Waveforms .................................................. 29 Figure 12. Input Waveforms and Measurement Levels............................................................................................. 29 AC Characteristics................................................ 30 Read-Only Operations ........................................................... 30 Figure 13. Read Operation Timings ............................................... Figure 14. Reset Timings ............................................................... Figure 15. BYTE# Timings for Read Operations............................ Figure 16. BYTE# Timings for Write Operations............................ Figure 17. Program Operation Timings.......................................... Figure 18. Chip/Sector Erase Operation Timings .......................... Figure 19. Back-to-Back Read/Write Cycle Timings ...................... Figure 20. Data# Polling Timings (During Embedded Algorithms). Figure 21. Toggle Bit Timings (During Embedded Algorithms)...... Figure 22. DQ2 vs. DQ6................................................................. Figure 23. Temporary Sector Unprotect Timing Diagram.......................................................................................... Figure 24. Sector Protect/Unprotect Timing Diagram.......................................................................................... 30 31 32 32 34 34 35 35 36 36 37 38 Alternate CE# Controlled Erase/Program Operations .............................................................................. 39 Figure 25. Alternate CE# Controlled Erase/Program Operation Timings.......................................................................... 40 Erase and Programming Performance ............... 41 Latchup Characteristics ....................................... 42 TSOP and SO Pin Capacitance............................ 42 Data Retention....................................................... 42 Physical Dimensions*........................................... 43 TS 048—48-Pin Standard TSOP ............................................ 43 TSR048—48-Pin Reverse TSOP ........................................... 44 SO 044—44-Pin Small Outline ............................................... 45 Revision Summary . . . . . . . . . . . . . . . . . . . . . . . . 46 Am29DL400B 3 PRODUCT SELECTOR GUIDE Family Part Number Am29DL400B Speed Options (Full Voltage Range: VCC = 2.7 – 3.6 V) -70 -80 -90 -120 Max Access Time (ns) 70 80 90 120 CE# Access (ns) 70 80 90 120 OE# Access (ns) 30 30 35 50 Note: See “AC Characteristics” for full specifications. BLOCK DIAGRAM RY/BY# X-Decoder A0–A17 RESET# WE# CE# BYTE# Upper Bank DQ0–DQ15 A0–A17 Y-Decoder Upper Bank Address A0–A17 Latches and Control Logic OE# BYTE# VCC VSS STATE CONTROL & COMMAND REGISTER Status DQ0–DQ15 Control Lower Bank Address Lower Bank Latches and Control Logic A0–A17 Y-Decoder A0–A17 X-Decoder OE# BYTE# 4 Am29DL400B DQ0–DQ15 DQ0–DQ15 CONNECTION DIAGRAMS A15 A14 A13 A12 A11 A10 A9 A8 NC NC WE# RESET# NC NC RY/BY# NC A17 A7 A6 A5 A4 A3 A2 A1 A16 BYTE# VSS DQ15/A-1 DQ7 DQ14 DQ6 DQ13 DQ5 DQ12 DQ4 VCC DQ11 DQ3 DQ10 DQ2 DQ9 DQ1 DQ8 DQ0 OE# VSS CE# A0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 Standard TSOP Reverse TSOP Am29DL400B 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 A16 BYTE# VSS DQ15/A-1 DQ7 DQ14 DQ6 DQ13 DQ5 DQ12 DQ4 VCC DQ11 DQ3 DQ10 DQ2 DQ9 DQ1 DQ8 DQ0 OE# VSS CE# A0 A15 A14 A13 A12 A11 A10 A9 A8 NC NC WE# RESET# NC NC RY/BY# NC A17 A7 A6 A5 A4 A3 A2 A1 5 CONNECTION DIAGRAMSPIN DESCRIPTION RY/BY# NC A17 A7 A6 A5 A4 A3 A2 A1 A0 CE# VSS OE# DQ0 DQ8 DQ1 DQ9 DQ2 DQ10 DQ3 DQ11 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 SO RESET# WE# A8 A9 A10 A11 A12 A13 A14 A15 A16 BYTE# VSS DQ15/A-1 DQ7 DQ14 DQ6 DQ13 DQ5 DQ12 DQ4 VCC PIN DESCRIPTION A0-A17 = 18 Addresses DQ0-DQ14 = 15 Data Inputs/Outputs DQ15/A-1 = DQ15 (Data Input/Output, word mode), A-1 (LSB Address Input, byte mode) CE# = Chip Enable OE# = Output Enable WE# = Write Enable BYTE# = Selects 8-bit or 16-bit mode RESET# = Hardware Reset Pin, Active Low RY/BY# = Ready/Busy Output VCC = 3.0 volt-only single power supply (see Product Selector Guide for speed options and voltage supply tolerances) VSS NC 6 LOGIC SYMBOL 18 = Device Ground = Pin Not Connected Internally Am29DL400B A0–A17 16 or 8 DQ0–DQ15 (A-1) CE# OE# WE# RESET# BYTE# RY/BY# ORDERING INFORMATION Standard Products AMD standard products are available in several packages and operating ranges. The order number (Valid Combination) is formed by a combination of the following: Am29DL400B T 70 E I TEMPERATURE RANGE C = Commercial (0°C to +70°C) I = Industrial (–40°C to +85°C) E = Extended (–55°C to +125°C) D = Commercial (0°C to +70°C) for Pb-free Package F = Industrial (-40°C to +85°C) for Pb-free Package K = Extended (-55°C to +125°C) for Pb-free Package PACKAGE TYPE E = 48-Pin Thin Small Outline Package (TSOP) Standard Pinout (TS 048) F = 48-Pin Thin Small Outline Package (TSOP) Reverse Pinout (TSR048) S = 44-Pin Small Outline Package (SO 044) SPEED OPTION See Product Selector Guide and Valid Combinations BOOT CODE SECTOR ARCHITECTURE T = Top sector B = Bottom sector DEVICE NUMBER/DESCRIPTION Am29DL400B 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS Flash Memory 3.0 Volt-only Read, Program, and Erase Valid Combinations Valid Combinations AM29DL400BT-70 AM29DL400BB-70 EC, EI, FC, FI, ED, EF SC, SI, SD, SF AM29DL400BT-80 AM29DL400BB-80 AM29DL400BT-90 AM29DL400BB-90 Valid Combinations list configurations planned to be supported in volume for this device. Consult the local AMD sales office to confirm availability of specific valid combinations to check on newly released combinations. EC, EI, EE, ED, EF, EK FC, FI, FE, SC, SI, SE, SD, SF, SK AM29DL400BT-120 AM29DL400BB-120 Am29DL400B 7 DEVICE BUS OPERATIONS This section describes the requirements and use of the device bus operations, which are initiated through the internal command register. The command register itself does not occupy any addressable memory location. The register is a latch used to store the commands, along with the address and data information needed to execute the command. Table 1. The contents of the register serve as inputs to the internal state machine. The state machine outputs dictate the function of the device. Table 1 lists the device bus operations, the inputs and control levels they require, and the resulting output. The following subsections describe each of these operations in further detail. Am29DL400B Device Bus Operations DQ8–DQ15 Operation CE# OE# WE # RESET# Addresses (Note 1) DQ0– DQ7 BYTE# = VIH BYTE# = VIL Read L L H H AIN DOUT DOUT Write L H L H AIN DIN DIN DQ8–DQ14 = High-Z, DQ15 = A-1 VCC ± 0.3 V X X VCC ± 0.3 V X High-Z High-Z High-Z Output Disable L H H H X High-Z High-Z High-Z Reset X X X L X High-Z High-Z High-Z Sector Protect (Note 2) L H L VID Sector Address, A6 = L, A1 = H, A0 = L DIN X X Sector Unprotect (Note 2) L H L VID Sector Address, A6 = H, A1 = H, A0 = L DIN X X Temporary Sector Unprotect X X X VID AIN DIN DIN High-Z Standby Legend: L = Logic Low = VIL, H = Logic High = VIH, VID = 12.0 ± 0.5 V, X = Don’t Care, AIN = Address In, DIN = Data In, DOUT = Data Out Notes: 1. Addresses are A17:A0 in word mode (BYTE# = VIH), A17:A-1 in byte mode (BYTE# = VIL). 2. The sector protect and sector unprotect functions may also be implemented via programming equipment. See the “Sector Protection/Unprotection” section. Word/Byte Configuration The BYTE# pin controls whether the device data I/O pins operate in the byte or word configuration. If the BYTE# pin is set at logic ‘1’, the device is in word configuration, DQ0-15 are active and controlled by CE# and OE# . If the BYTE# pin is set at logic ‘0’, the device is in byte configuration, and only data I/O pins DQ0–DQ7 are active and controlled by CE# and OE#. The data I/O pins DQ8–DQ14 are tri-stated, and the DQ15 pin is used as an input for the LSB (A-1) address function. Requirements for Reading Array Data To read array data from the outputs, the system must drive the CE# and OE# pins to VIL. CE# is the power control and selects the device. OE# is the output control and gates array data to the output pins. WE# should remain at VIH . The BYTE# pin determines whether the device outputs array data in words or bytes. The internal state machine is set for reading array data upon device power-up, or after a hardware reset. This ensures that no spurious alteration of the 8 memory content occurs during the power transition. No command is necessary in this mode to obtain array data. Standard microprocessor read cycles that assert valid addresses on the device address inputs produce valid data on the device data outputs. Each bank remains enabled for read access until the command register contents are altered. See “Reading Array Data” for more information. Refer to the AC Read-Only Operations table for timing specifications and to Figure 13 for the timing diagram. ICC1 in the DC Characteristics table represents the active current specification for reading array data. Writing Commands/Command Sequences To write a command or command sequence (which includes programming data to the device and erasing sectors of memory), the system must drive WE# and CE# to VIL, and OE# to VIH. For program operations, the BYTE# pin determines whether the device accepts program data in bytes or words. Refer to “Word/Byte Configuration” for more information. Am29DL400B The device features an Unlock Bypass mode to facilitate faster programming. Once a bank enters the Unlock Bypass mode, only two write cycles are required to program a word or byte, instead of four. The “Byte/Word Program Command Sequence” section has details on programming data to the device using both standard and Unlock Bypass command sequences. An erase operation can erase one sector, multiple sectors, or the entire device. Tables 2 and 3 indicate the address space that each sector occupies. The device address space is divided into two banks: Bank 1 contains the boot/parameter sectors, and Bank 2 contains the larger, code sectors of uniform size. A “bank address” is the address bits required to uniquely select a bank. Similarly, a “sector address” is the address bits required to uniquely select a sector. If the system writes the autoselect command sequence, the device enters the autoselect mode. The system can then read autoselect codes from the internal register (which is separate from the memory array) on DQ7–DQ0. Standard read cycle timings apply in this mode. Refer to the Autoselect Mode and Autoselect Command Sequence sections for more information. ICC2 in the DC Characteristics table represents the active current specification for the write mode. The AC Characteristics section contains timing specification tables and timing diagrams for write operations. Simultaneous Read/Write Operations with Zero Latency This device is capable of reading data from one bank of memory while programming or erasing in the other bank of memory. An erase operation may also be suspended to read from or program to another location within the same bank (except the sector being erased). Figure 19 shows how read and write cycles may be initiated for simultaneous operation with zero latency. ICC6 and ICC7 in the DC Characteristics table represent the current specifications for readwhile-program and read-while-erase, respectively. Standby Mode When the system is not reading or writing to the device, it can place the device in the standby mode. In this mode, current consumption is greatly reduced, and the outputs are placed in the high impedance state, independent of the OE# input. The device enters the CMOS standby mode when the CE# and RESET# pins are both held at VCC ± 0.3 V. (Note that this is a more restricted voltage range than VIH.) If CE# and RESET# are held at VIH, but not within V CC ± 0.3 V, the device will be in the standby mode, but the standby current will be greater. The device requires standard access time (tCE) for read access when the device is in either of these standby modes, before it is ready to read data. The device also enters the standby mode when the RESET# pin is driven low. Refer to the next section, “RESET#: Hardware Reset Pin”. If the device is deselected during erasure or programming, the device draws active current until the operation is completed. ICC3 in the DC Characteristics table represents the standby current specification. Automatic Sleep Mode The automatic sleep mode minimizes Flash device energy consumption. The device automatically enables this mode when addresses remain stable for tACC + 30 ns. The automatic sleep mode is independent of the CE#, WE#, and OE# control signals. Standard address access timings provide new data when addresses are changed. While in sleep mode, output data is latched and always available to the system. ICC4 in the DC Characteristics table represents the automatic sleep mode current specification. RESET#: Hardware Reset Pin The RESET# pin provides a hardware method of resetting the device to reading array data. When the RESET# pin is driven low for at least a period of tRP, the device immediately terminates any operation in progress, tristates all output pins, and ignores all read/write commands for the duration of the RESET# pulse. The device also resets the internal state machine to reading array data. The operation that was interrupted should be reinitiated once the device is ready to accept another command sequence, to ensure data integrity. Current is reduced for the duration of the RESET# pulse. When RESET# is held at VSS±0.3 V, the device draws CMOS standby current (ICC4 ). If RESET# is held at V IL but not within VSS ±0.3 V, the standby current will be greater. The RESET# pin may be tied to the system reset circuitry. A system reset would thus also reset the Flash memory, enabling the system to read the boot-up firmware from the Flash memory. If RESET# is asserted during a program or erase operation, the RY/BY# pin remains a “0” (busy) until the internal reset operation is complete, which requires a time of tREADY (during Embedded Algorithms). The system can thus monitor RY/BY# to determine whether the reset operation is complete. If RESET# is asserted when a program or erase operation is not executing (RY/BY# pin is “1”), the reset operation is completed within a time of tREADY (not during Embedded Algorithms). The system can read data tRH after the RESET# pin returns to VIH. Refer to the AC Characteristics tables for RESET# parameters and to Figure 14 for the timing diagram. Am29DL400B 9 Output Disable Mode When the OE# input is at VIH, output from the device is disabled. The output pins are placed in the high impedance state. Table 2. Am29DL400BT Top Boot Sector Architecture Sector Address Bank Address Bank Bank 2 Bank 1 Sector A17 A16 A15 A14 A13 A12 Sector Size (Kbytes/ Kwords) SA0 0 0 0 X X X 64/32 00000h–0FFFFh 00000h–07FFFh SA1 0 0 1 X X X 64/32 10000h–1FFFFh 08000h–0FFFFh SA2 0 1 0 X X X 64/32 20000h–2FFFFh 10000h–17FFFh SA3 0 1 1 X X X 64/32 30000h–3FFFFh 18000h–1FFFFh SA4 1 0 0 X X X 64/32 40000h–4FFFFh 20000h–27FFFh SA5 1 0 1 X X X 64/32 50000h–5FFFFh 28000h–2FFFFh SA6 1 1 0 0 0 X 16/8 60000h–63FFFh 30000h–31FFFh SA7 1 1 0 0 1 X 1 0 X 32/16 64000h–6BFFFh 32000h–35FFFh SA8 1 1 0 1 1 0 8/4 6C000h–6DFFFh 36000h–36FFFh SA9 1 1 0 1 1 1 8/4 6E000h–6FFFFh 37000h–37FFFh SA10 1 1 1 0 0 0 8/4 70000h–71FFFh 38000h–38FFFh SA11 1 1 1 0 0 1 8/4 72000h–73FFFh 39000h–39FFFh SA12 1 1 1 0 1 X 1 0 X 32/16 74000h–7BFFFh 3A000h–3DFFFh SA13 1 1 1 1 1 X 16/8 7C000h–7FFFFh 3E000h–3FFFFh (x8) Address Range (x16) Address Range Note: The address range is A17:A-1 if in byte mode (BYTE# = VIL). The address range is A17:A0 if in word mode (BYTE# = VIH). 10 Am29DL400B Table 3. Am29DL400BB Bottom Boot Sector Architecture Sector Address Bank Address Bank Bank 2 Bank 1 Sector A17 A16 A15 A14 A13 A12 Sector Size (Kbytes/Kwords) (x8) Address Range (x16) Address Range SA13 1 1 1 X X X 64/32 70000h–7FFFFh 38000h–3FFFFh SA12 1 1 0 X X X 64/32 60000h–6FFFFh 30000h–37FFFh SA11 1 0 1 X X X 64/32 50000h–5FFFFh 28000h–2FFFFh SA10 1 0 0 X X X 64/32 40000h–4FFFFh 20000h–27FFFh SA9 0 1 1 X X X 64/32 30000h–3FFFFh 18000h–1FFFFh SA8 0 1 0 X X X 64/32 20000h–2FFFFh 10000h–17FFFh SA7 0 0 1 1 1 X 16/8 1C000h–1FFFFh 0E000h–0FFFFh SA6 0 0 1 1 0 X 0 1 X 32/16 14000h–1BFFFh 0A000h–0DFFFh SA5 0 0 1 0 0 1 8/4 12000h–13FFFh 09000h–09FFFh SA4 0 0 1 0 0 0 8/4 10000h–11FFFh 08000h–08FFFh SA3 0 0 0 1 1 1 8/4 0E000h–0FFFFh 07000h–07FFFh SA2 0 0 0 1 1 0 8/4 0C000h–0DFFFh 06000h–06FFFh SA1 0 0 0 1 0 X 0 1 X 32/16 04000h–0BFFFh 02000h–05FFFh SA0 0 0 0 0 0 X 16/8 00000h–03FFFh 00000h–01FFFh Note: The address range is A17:A-1 if in byte mode (BYTE# = VIL). The address range is A17:A0 if in word mode (BYTE# = VIH). Autoselect Mode The autoselect mode provides manufacturer and device identification, and sector protection verification, through identifier codes output on DQ7–DQ0. This mode is primarily intended for programming equipm e nt to a u t o m a t i ca l l y m a t c h a d e v i ce t o b e programmed with its corresponding programming algorithm. However, the autoselect codes can also be accessed in-system through the command register. When using programming equipment, the autoselect mode requires VID (11.5 V to 12.5 V) on address pin A9. Address pins A6, A1, and A0 must be as shown in Table 4. In addition, when verifying sector protec- tio n, the sec tor add re ss mu st app ear on the appropriate highest order address bits (see Tables 2 and 3). Table 4 shows the remaining address bits that are don’t care. When all necessary bits have been set as required, the programming equipment may then read the corresponding identifier code on DQ7-DQ0. To access the autoselect codes in-system, the host system can issue the autoselect command via the command register, as shown in Table 5. This method does not require VID. Refer to the Autoselect Command Sequence section for more information. Am29DL400B 11 Table 4. Description Mode Manufacturer ID: AMD Am29DL400B Autoselect Codes (High Voltage Method) A17 A11 to to WE# A12 A10 CE# OE# L L H L L H Device ID: Am29DL400B (Top Boot Block) Word Byte L L H Device ID: Am29DL400B (Bottom Boot Block) Word L L H Byte Sector Protection Verification L L L L H H A9 A8 to A7 A6 A5 to A2 A1 A0 DQ8 to DQ15 DQ7 to DQ0 X 01h 22h 0C X 0C 22h 0F X 0F X 01h (protected) X 00h (unprotected ) BA X VID X L X L L BA X VID X L X L H BA X VID X L X L H SA X VID X L X H L Note: L = Logic Low = VIL, H = Logic High = VIH, BA = Bank Address, SA = Sector Address, X = Don’t care. Sector Protection/Unprotection The hardware sector protection feature disables both program and erase operations in any sector. The hardware sector unprotection feature re-enables both program and erase operations in previously protected sectors. Sector protection/unprotection can be implemented via two methods. mode, formerly protected sectors can be programmed or erased by selecting the sector addresses. Once VID is removed from the RESET# pi n , a l l the p re v i ou sl y p r ot e cte d se c tor s a re protected again. Figure 1 shows the algorithm, and Figure 23 shows the timing diagrams, for this feature. The primary method requires VID on the RESET# pin only, and can be implemented either in-system or via programming equipment. Figure 2 shows the algorithms and Figure 24 shows the timing diagram. This method uses standard microprocessor bus cycle timing. For sector unprotect, all unprotected sectors must first be protected prior to the first sector unprotect write cycle. START RESET# = VID (Note 1) The alternate method intended only for programming equipment requires VID on address pin A9 and OE#. This method is compatible with programmer routines written for earlier 3.0 volt-only AMD flash devices. Publication number 22145 contains further details; contact an AMD representative to request a copy. Perform Erase or Program Operations RESET# = VIH The device is shipped with all sectors unprotected. AMD offers the option of programming and protecting sectors at its factory prior to shipping the device through AMD’s ExpressFlash™ Service. Contact an AMD representative for details. It is possible to determine whether a sector is protected or unprotected. See the Autoselect Mode section for details. Temporary Sector Unprotect Temporary Sector Unprotect Completed (Note 2) Notes: 1. All protected sectors unprotected. 2. All previously protected sectors are protected once again. This feature allows temporary unprotection of previously protected sectors to change data in-system. The Sector Unprotect mode is activated by setting the RESET# pin to VID (11.5 V – 12.5 V). During this 12 Am29DL400B Figure 1. Temporary Sector Unprotect Operation START START Protect all sectors: The indicated portion of the sector protect algorithm must be performed for all unprotected sectors prior to issuing the first sector unprotect address PLSCNT = 1 RESET# = VID Wait 1 μs Temporary Sector Unprotect Mode No PLSCNT = 1 RESET# = VID Wait 1 μs No First Write Cycle = 60h? First Write Cycle = 60h? Yes Yes Set up sector address No All sectors protected? Sector Protect: Write 60h to sector address with A6 = 0, A1 = 1, A0 = 0 Yes Set up first sector address Sector Unprotect: Write 60h to sector address with A6 = 1, A1 = 1, A0 = 0 Wait 150 µs Increment PLSCNT Temporary Sector Unprotect Mode Verify Sector Protect: Write 40h to sector address with A6 = 0, A1 = 1, A0 = 0 Reset PLSCNT = 1 Wait 15 ms Read from sector address with A6 = 0, A1 = 1, A0 = 0 Verify Sector Unprotect: Write 40h to sector address with A6 = 1, A1 = 1, A0 = 0 Increment PLSCNT No No PLSCNT = 25? Yes Yes No Yes Device failed PLSCNT = 1000? Protect another sector? No Yes Remove VID from RESET# Device failed Write reset command Sector Protect Algorithm Read from sector address with A6 = 1, A1 = 1, A0 = 0 Data = 01h? Sector Protect complete Set up next sector address No Data = 00h? Yes Last sector verified? No Yes Sector Unprotect Algorithm Remove VID from RESET# Write reset command Sector Unprotect complete Figure 2. In-System Sector Protect/Unprotect Algorithms Am29DL400B 13 Hardware Data Protection The command sequence requirement of unlock cycles for programming or erasing provides data protection against inadvertent writes (refer to Table 5 for command definitions). In addition, the following hardware data protection measures prevent accidental erasure or programming, which might otherwise be caused by spurious system level signals during VCC power-up and power-down transitions, or from system noise. Low VCC Write Inhibit When VCC is less than VLKO, the device does not accept any write cycles. This protects data during VCC power-up and power-down. The command register and all internal program/erase circuits are disabled, and the device resets to reading array data. Subsequent writes are ignored until VCC is greater than VLKO. The system must provide the proper signals to the control pins to prevent unintentional writes when VCC is greater than VLKO. Write Pulse “Glitch” Protection Noise pulses of less than 5 ns (typical) on OE#, CE# or WE# do not initiate a write cycle. Logical Inhibit Write cycles are inhibited by holding any one of OE# = VIL, CE# = V IH or WE# = VIH. To initiate a write cycle, CE# and WE# must be a logical zero while OE# is a logical one. Power-Up Write Inhibit If WE# = CE# = V IL and OE# = VIH during power up, the device does not accept commands on the rising edge of WE#. The internal state machine is auto mat icall y r ese t to re ading arra y d ata on power-up. COMMAND DEFINITIONS Writing specific address and data commands or sequences into the command register initiates device operations. Table 5 defines the valid register command sequences. Writing incorrect address and data values or writing them in the improper sequence resets the device to reading array data. All addresses are latched on the falling edge of WE# or CE#, whichever happens later. All data is latched on the rising edge of WE# or CE#, whichever happens first. Refer to the appropriate timing diagrams in the AC Characteristics section. Reading Array Data The device is automatically set to reading array data after device power-up. No commands are required to retrieve data. Each bank is ready to read array data after completing an Embedded Program or Embedded Erase algorithm. After the device accepts an Erase Suspend command, the corresponding bank enters the erasesuspend-read mode, after which the system can read data from any non-erase-suspended sector within the same bank. After completing a programming operation in the Erase Suspend mode, the system may once again read array data with the same exception. See the Erase Suspend/Erase Resume Commands section for more information. The system must issue the reset command to return a bank to the read (or erase-suspend-read) mode if DQ5 goes high during an active program or erase operation, or if the bank is in the autoselect mode. See t he ne x t s ec ti o n, Res e t C o mm a n d, fo r m o re information. See also Requirements for Reading Array Data in the Device Bus Operations section for more information. The “Read-Only Operations” table provides the read pa rame te rs, and Fig ur e 13 shows the ti ming diagram. 14 Reset Command Writing the reset command resets the banks to the read or erase-suspend-read mode. Address bits are don’t cares for this command. The reset command may be written between the sequence cycles in an erase command sequence before erasing begins. This resets the bank to which the system was writing to reading array data. Once erasure begins, however, the device ignores reset commands until the operation is complete. The reset command may be written between the sequence cycles in a program command sequence before programming begins. This resets the bank to which the system was writing to the reading array data. If the program command sequence is written to a bank that is in the Erase Suspend mode, writing the reset command returns that bank to the erasesuspend-read mode. Once programming begins, however, the device ignores reset commands until the operation is complete. The reset command may be written between the sequence cycles in an autoselect command sequence. Once in the autoselect mode, the reset command must be written to return to reading array data. If a bank entered the autoselect mode while in the Erase Suspend mode, writing the reset command returns that bank to the erase-suspend-read mode. If DQ5 goes high during a program or erase operation, writing the reset command returns the banks to reading array data (or erase-suspend-read mode if that bank was in Erase Suspend). Autoselect Command Sequence The autoselect command sequence allows the host system to access the manufacturer and devices codes, and determine whether or not a sector is prote c te d . Ta b l e 5 s ho w s th e a d d r es s a n d d a ta Am29DL400B requirements. This method is an alternative to that shown in Table 4, which is intended for PROM programmers and requires VID on address pin A9. The autoselect command sequence may be written to an address within a bank that is either in the read or erase-suspend-read mode. The autoselect command may not be written while the device is actively programming or erasing in the other bank. The autoselect command sequence is initiated by first writing two unlock cycles. This is followed by a third write cycle that contains the bank address and the autoselect command. The addressed bank then enters the autoselect mode. The system may read at any address within the same bank any number of times without initiating another autoselect command sequence: ■ A read cycle at address (BA)XX00h (where BA is the bank address) returns the manufacturer code. ■ A read cycle at address (BA)XX01h in word mode (or (BA)XX02h in byte mode) returns the device code. ■ A read cycle to an address containing a sector address (SA) within the same bank, and the address 02h on A7–A0 in word mode (or the address 04h on A6–A-1 in byte mode) returns 01h if the sector is protected, or 00h if it is unprotected. Refer to Tables 2 and 3 for valid sector addresses. The system may continue to read array data from the other bank while a bank is in the autoselect mode. To exit the autoselect mode, the system must write the reset command to return both banks to reading array data. If a bank enters the autoselect mode while erase suspended, a reset command returns that bank to the erase-suspend-read mode. A subsequent Erase Resume command returns the bank to the erase operation. Byte/Word Program Command Sequence The system may program the device by word or byte, depending on the state of the BYTE# pin. Prog ram ming is a four-bus-cycle op eration. The program command sequence is initiated by writing two unlock write cycles, followed by the program set-up command. The program address and data are written next, which in turn initiate the Embedded Program algorithm. The system is not required to provide further controls or timings. The device automatically generates the program pulses and verifies the programmed cell margin. Table 5 shows the address and data requirements for the byte program command sequence. When the Embedded Program algorithm is complete, that bank then returns to reading array data and ad- dresses are no longer latched. The system can determine the status of the program operation by using DQ7, DQ6, or RY/BY#. Note that while the Embedded Program operation is in progress, the system can read data from the non-programming bank. Refer to the Write Operation Status section for information on these status bits. Any commands written to the device during the Embedded Program Algorithm are ignored. Note that a hardware reset immediately terminates the program operation. The program command sequence should be reinitiated once that bank has returned to reading array data, to ensure data integrity. Programming is allowed in any sequence and across sector boundaries. A bit cannot be programmed from “0” back to a “1.” Attempting to do so may cause that bank to set DQ5 = 1, or cause the DQ7 and DQ6 status bits to indicate the operation was successful. However, a succeeding read will show that the data is still “0.” Only erase operations can convert a “0” to a “1.” Unlock Bypass Command Sequence The unlock bypass feature allows the system to program bytes or words to a bank faster than using the standard program command sequence. The unlock bypass command sequence is initiated by first writing two unlock cycles. This is followed by a third write cycle containing the unlock bypass command, 20h. That bank then enters the unlock bypass mode. A two-cycle unlock bypass program command sequence is all that is required to program in this mode. The first cycle in this sequence contains the unlock bypass program command, A0h; the second cycle contains the program address and data. Additional data is programmed in the same manner. This mode dispenses with the initial two unlock cycles required in the standard program command sequence, resulting in faster total programming time. Table 5 shows the requirements for the command sequence. During the unlock bypass mode, only the Unlock Bypass Program and Unlock Bypass Reset commands are valid. To exit the unlock bypass mode, the system must issue the two-cycle unlock bypass reset command sequence. The first cycle must contain the bank address and the data 90h. The second cycle need only contain the data 00h. The bank then returns to reading array data. Figure 3 illustrates the algorithm for the program operation. Refer to the Erase and Program Operations table in the AC Characteristics section for parameters, and Figure 17 for timing diagrams. Am29DL400B 15 should be reinitiated once that bank has returned to reading array data, to ensure data integrity. Figure 4 illustrates the algorithm for the erase operation. Refer to the Erase and Program Operations tables in the AC Characteristics section for parameters, and Figure 18 section for timing diagrams. START Write Program Command Sequence Sector Erase Command Sequence Sector erase is a six bus cycle operation. The sector erase command sequence is initiated by writing two unlock cycles, followed by a set-up command. Two additional unlock cycles are written, and are then followed by the address of the sector to be erased, and the sector erase command. Table 5 shows the address and data requirements for the sector erase command sequence. Data Poll from System Embedded Program algorithm in progress Verify Data? No Yes Increment Address No Last Address? Yes Programming Completed 3. Note: See Table 5 for program command sequence. Figure 3. Program Operation Chip Erase Command Sequence Chip erase is a six bus cycle operation. The chip erase command sequence is initiated by writing two unlock cycles, followed by a set-up command. Two additional unlock write cycles are then followed by the chip erase command, which in turn invokes the Embedded Erase algorithm. The device does not require the system to preprogram prior to erase. The Embedded Erase algorithm automatically preprograms and verifies the entire memory for an all zero data pattern prior to electrical erase. The system is not required to provide any controls or timings during these operations. Table 5 shows the address and data requirements for the chip erase command sequence. When the Embedded Erase algorithm is complete, that bank returns to reading array data and addresses are no longer latched. The system can determine the status of the erase operation by using DQ7, DQ6, DQ2, or RY/BY#. Refer to the Write Operation Status section for information on these status bits. The device does not require the system to preprogram prior to erase. The Embedded Erase algorithm automatically programs and verifies the entire memory for an all zero data pattern prior to electrical erase. The system is not required to provide any controls or timings during these operations. After the command sequence is written, a sector erase time-out of 50 µs occurs. During the time-out period, additional sector addresses and sector erase commands may be written. Loading the sector erase buffer may be done in any sequence, and the number of sectors may be from one sector to all sectors. The time between these additional cycles must be less than 50 µs, otherwise the last address and command may not be accepted, and erasure may begin. It is recommended that processor interrupts be disabled during this time to ensure all commands are accepted. The interrupts can be re-enabled after the last Sector Erase command is written. Any command other than Sector Erase or Erase Suspend during the time-out period resets that bank to reading array data. The system must rewrite the command sequence and any additional addresses and commands. The system can monitor DQ3 (in the erasing bank) to determine if the sector erase timer has timed out (See the section on DQ3: Sector Erase Timer.). The time-out begins from the rising edge of the final WE# pulse in the command sequence. When the Embedded Erase algorithm is complete, the bank returns to reading array data and addresses are no longer latched. Note that while the Embedded Erase operation is in progress, the system can read data from the non-erasing bank. The system can determine the status of the erase operation by reading DQ7, DQ6, DQ2, or RY/BY# in the erasing bank. Refer to the Write Operation Status section for information on these status bits. Any commands written during the chip erase operation are ignored. However, note that a hardware reset immediately terminates the erase operation. If that occurs, the chip erase command sequence Once the sector erase operation has begun, only the Erase Suspend command is valid. All other commands are ignored. However, note that a hardware reset immediately terminates the erase operation. If that occurs, the sector erase command sequence should be reinitiated once that bank has returned to reading array data, to ensure data integrity. 16 Am29DL400B Figure 4 illustrates the algorithm for the erase operation. Refer to the Erase and Program Operations tables in the AC Characteristics section for parameters, and Figure 18 section for timing diagrams. In the erase-suspend-read mode, the system can also issue the autoselect command sequence. Refer to the Autoselect Mode and Autoselect Command Sequence sections for details. Erase Suspend/Erase Resume Commands To resume the sector erase operation, the system must write the Erase Resume command. The bank address of the erase-suspended bank is required when writing this command. Further writes of the Resume command are ignored. Another Erase Suspend command can be written after the chip has resumed erasing. The Erase Suspend command, B0h, allows the system to interrupt a sector erase operation and then read data from, or program data to, any sector not selected for erasure. The bank address is required when writing this command. This command is valid only during the sector erase operation, including the 50 µs time-out period during the sector erase command sequence. The Erase Suspend command is ignored if written during the chip erase operation or Embedded Program algorithm. START When the Erase Suspend command is written during the sector erase operation, the device requires a maximum of 20 µs to suspend the erase operation. However, when the Erase Suspend command is written during the sector erase time-out, the device immediately terminates the time-out period and suspends the erase operation. After the erase operation has been suspended, the bank enters the erase-suspend-read mode. The system can read data from or program data to any sector not selected for erasure. (The device “erase suspends” all sectors selected for erasure.) Reading at any address within erase-suspended sectors produces status information on DQ7–DQ0. The system can use DQ7, or DQ6 and DQ2 together, to determine if a sector is actively erasing or is erasesuspended. Refer to the Write Operation Status section for information on these status bits. After an erase-suspended program operation is complete, the bank returns to the erase-suspend-read mode. The system can determine the status of the program operation using the DQ7 or DQ6 status bits, just as in the standard Byte Program operation. Refer to the Write Operation Status section for more information. Write Erase Command Sequence (Notes 1, 2) Data Poll to Erasing Bank from System No Embedded Erase algorithm in progress Data = FFh? Yes Erasure Completed Notes: 1. See Table 5 for erase command sequence. 2. See the section on DQ3 for information on the sector erase timer. Figure 4. Erase Operation Am29DL400B 17 COMMAND DEFINITIONS Cycles Table 5. Command Sequence (Note 1) Read (Note 6) Reset (Note 7) Autoselect (Note 8) Manufacturer ID Word Byte Device ID, Top Boot Block Word Device ID, Bottom Boot Block Word Sector Protect Verify (Note 9) Program Unlock Bypass Byte Byte Am29DL400B Command Definitions Bus Cycles (Notes 2–5) First Second Addr Data Addr Data 1 RA RD 1 XXX F0 4 4 4 Word 555 AAA 555 AAA 555 AAA AA AA AA 555 4 2AA 555 2AA 555 2AA 555 55 55 55 2AA AA (BA)555 (BA)AAA (BA)555 (BA)AAA AAA 555 (BA)AAA Word 555 2AA 555 Word Byte 4 3 AAA 555 AAA AA AA 555 2AA 555 55 55 2 XXX A0 PA PD 2 BA 90 XXX 00 Word Byte Word Byte 6 6 555 AAA 555 AAA AA AA Erase Suspend (Note 12) 1 BA B0 Erase Resume (Note 13) 1 BA 30 2AA 555 2AA 555 55 55 AAA 555 AAA 555 AAA 555 AAA Fifth Addr Data 90 (BA)X00 01 (BA)X01 220C 90 90 90 Byte Byte Fourth Data (BA)555 Unlock Bypass Reset (Note 11) Sector Erase (BA)555 (BA)AAA 55 Unlock Bypass Program (Note 10) Chip Erase Third Addr A0 (BA)X02 0C (BA)X01 220F (BA)X02 0F (SA) X02 XX00 (SA) X04 00 PA PD Sixth Addr Data Addr Data XX01 01 20 80 80 555 AAA 555 AAA AA AA 2AA 555 2AA 555 55 55 555 AAA SA 10 30 Legend: X = Don’t care RA = Address of the memory location to be read. RD = Data read from location RA during read operation. PA = Address of the memory location to be programmed. Addresses latch on the falling edge of the WE# or CE# pulse, whichever happens later. PD = Data to be programmed at location PA. Data latches on the rising edge of WE# or CE# pulse, whichever happens first. SA = Address of the sector to be verified (in autoselect mode) or erased. Address bits A17–A12 uniquely select any sector. BA = Address of the bank that is being switched to autoselect mode, is in bypass mode, or is being erased. Address bits A17– A16 select a bank. Notes: 1. See Table 1 for description of bus operations. 2. All values are in hexadecimal. 3. Except when reading array or autoselect data, all bus cycles are write operations. 4. Data bits DQ15–DQ8 are don’t cares for unlock and command cycles in word mode. 5. Address bits A17–A11 are don’t cares for unlock and command cycles, unless bank address (BA) is required. 6. No unlock or command cycles required when bank is in read mode. 7. The Reset command is required to return to reading array data (or to the erase-suspend-read mode if previously in Erase Suspend) when a bank is in the autoselect mode, or if DQ5 is goes high (while the bank is providing status information). 8. The fourth cycle of the autoselect command sequence is a read cycle. The system must provide the bank address to obtain the manufacturer or device ID information. 9. The data is 00h for an unprotected sector and 01h for a protected sector. See the Autoselect Command Sequence section for more information. 10. The Unlock Bypass command is required prior to the Unlock Bypass Program command. 11. The Unlock Bypass Reset command is required to return to reading array data when the bank is in the unlock bypass mode. 12. The system may read and program in non-erasing sectors, or enter the autoselect mode, when in the Erase Suspend mode. The Erase Suspend command is valid only during a sector erase operation, and requires the bank address. 13. The Erase Resume command is valid only during the Erase Suspend mode, and requires the bank address. 18 Am29DL400B WRITE OPERATION STATUS The device provides several bits to determine the status of a write operation in the bank where a program or erase operation is in progress: DQ2, DQ3, DQ5, DQ6, DQ7, and RY/BY#. Table 6 and the following subsections describe the function of these bits. DQ7, RY/BY#, and DQ6 each offer a method for determining whether a program or erase operation is complete or in progress. These three bits are discussed first. 20 in the AC Characteristics section shows the Data# Polling timing diagram. START DQ7: Data# Polling Read DQ7–DQ0 Addr = VA The Data# Polling bit, DQ7, indicates to the host system whether a n E mbed ded Prog ram or E rase algorithm is in progress or completed, or whether a bank is in Erase Suspend. Data# Polling is valid after the rising edge of the final WE# pulse in the command sequence. DQ7 = Data? During the Embedded Program algorithm, the device outputs on DQ7 the complement of the datum programmed to DQ7. This DQ7 status also applies to programming during Erase Suspend. When the Embedded Program algorithm is complete, the device outputs the datum programmed to DQ7. The system must provide the program address to read valid status information on DQ7. If a program address falls within a protected sector, Data# Polling on DQ7 is active for approximately 1 µs, then that bank returns to reading array data. No No Just prior to the completion of an Embedded Program or Erase operation, DQ7 may change asynchronously with DQ0–DQ6 while Output Enable (OE#) is asserted low. That is, the device may change from providing status information to valid data on DQ7. Depending on when the system samples the DQ7 output, it may read the status or valid data. Even if the device has completed the program or erase operation and DQ7 has valid data, the data outputs on DQ0–DQ6 may be still invalid. Valid data on DQ0–DQ7 will appear on successive read cycles. Table 6 shows the outputs for Data# Polling on DQ7. Figure 5 shows the Data# Polling algorithm. Figure DQ5 = 1? Yes Read DQ7–DQ0 Addr = VA During the Embedded Erase algorithm, Data# Polling produces a “0” on DQ7. When the Embedded Erase algorithm is complete, or if the bank enters the Erase Suspend mode, Data# Polling produces a “1” on DQ7. The system must provide an address within any of the sectors selected for erasure to read valid status information on DQ7. After an erase command sequence is written, if all sectors selected for erasing are protected, Data# Polling on DQ7 is active for approximately 100 µs, then the bank returns to reading array data. If not all selected sectors are protected, the Embedded Erase algorithm erases the unprotected sectors, and ignores the selected sectors that are protected. However, if the system reads DQ7 at an address within a protected sector, the status may not be valid. Yes DQ7 = Data? Yes No FAIL PASS Notes: 1. VA = Valid address for programming. During a sector erase operation, a valid address is any sector address within the sector being erased. During chip erase, a valid address is any non-protected sector address. 2. DQ7 should be rechecked even if DQ5 = “1” because DQ7 may change simultaneously with DQ5. Figure 5. Data# Polling Algorithm RY/BY#: Ready/Busy# The RY/BY# is a dedicated, open-drain output pin that indicates whether an Embedded Algorithm is in progress or complete. The RY/BY# status is valid after the rising edge of the final WE# pulse in the command sequence. Since RY/BY# is an open-drain output, several RY/BY# pins can be tied together in parallel with a pull-up resistor to VCC. Am29DL400B 19 If the output is low (Busy), the device is actively erasing or programming. (This includes programming in the Erase Suspend mode.) If the output is high (Ready), the device is ready to read array data, is in the standby mode, or one of the banks is in the erase-suspend-read mode. Table 6 shows the outputs for RY/BY#. DQ2: Toggle Bit II The “Toggle Bit II” on DQ2, when used with DQ6, indicates whether a particular sector is actively erasing (that is, the Em bedde d Era se a lg orithm is i n progress), or whether that sector is erase-suspended. Toggle Bit II is valid after the rising edge of the final WE# pulse in the command sequence. Toggle Bit I on DQ6 indicates whether an Embedded Program or Erase algorithm is in progress or complete, or whether the device has entered the Erase Suspend mode. Toggle Bit I may be read at any address within the programming or erasing bank, and is valid after the rising edge of the final WE# pulse in the command sequence (prior to the program or erase operation), and during the sector erase timeout. DQ2 toggles when the system reads at addresses within those sectors that have been selected for erasure. (The system may use either OE# or CE# to control the read cycles.) But DQ2 cannot distinguish whether the sector is actively erasing or is erasesuspended. DQ6, by comparison, indicates whether the device is actively erasing, or is in Erase Suspend, but cannot distinguish which sectors are selected for erasure. Thus, both status bits are required for sector and mode information. Refer to Table 6 to compare outputs for DQ2 and DQ6. During an Embedded Program or Erase algorithm operation, successive read cycles to any address within the programming or erasing bank cause DQ6 to toggle. The system may use either OE# or CE# to control the read cycles. When the operation is complete, DQ6 stops toggling. Figure 6 shows the toggle bit algorithm in flowchart form, and the section “DQ2: Toggle Bit II” explains the algorithm. See also the DQ6: Toggle Bit I subsection. Figure 21 shows the toggle bit timing diagram. Figure 22 shows the differences between DQ2 and DQ6 in graphical form. DQ6: Toggle Bit I After an erase command sequence is written, if all sectors selected for erasing are protected, DQ6 toggles for approximately 100 µs, then returns to reading array data. If not all selected sectors are protected, the Embedded Erase algorithm erases the unprotected sectors, and ignores the selected sectors that are protected. The system can use DQ6 and DQ2 together to determine whether a sector is actively erasing or is erasesuspended. When a bank is actively erasing (that is, the Embedded Erase algorithm is in progress), DQ6 toggles. When that bank enters the Erase Suspend mode, DQ6 stops toggling. However, the system must also use DQ2 to determine which sectors are erasing or erase-suspended. Alternatively, the system can use DQ7 (see the subsection on DQ7: Data# Polling). If a program address falls within a protected sector, DQ6 toggles for approximately 1 µs after the program command sequence is written, then returns to reading array data. DQ6 also toggles during the erase-suspend-program mode, and stops toggling once the Embedded Program algorithm is complete. Table 6 shows the outputs for Toggle Bit I on DQ6. Figure 6 shows the toggle bit algorithm. Figure 21 in the “AC Characteristics” section shows the toggle bit timing diagrams. Figure 22 shows the differences between DQ2 and DQ6 in graphical form. See also the subsection on DQ2: Toggle Bit II. 20 Reading Toggle Bits DQ6/DQ2 Refer to Figure 6 for the following discussion. Whenever the system initially begins reading toggle bit status, it must read DQ7–DQ0 at least twice in a row to determine whether a toggle bit is toggling. Typically, the system would note and store the value of the toggle bit after the first read. After the second read, the system would compare the new value of the toggle bit with the first. If the toggle bit is not toggling, the device has completed the program or erase operation. The system can read array data on DQ7–DQ0 on the following read cycle. However, if after the initial two read cycles, the system determines that the toggle bit is still toggling, the system also should note whether the value of DQ5 is high (see the section on DQ5). If it is, the system should then determine again whether the toggle bit is toggling, since the toggle bit may have stopped toggling just as DQ5 went high. If the toggle bit is no longer toggling, the device has successfully completed the program or erase operation. If it is still toggling, the device did not completed the operation successfully, and the system must write the reset command to return to reading array data. The remaining scenario is that the system initially determines that the toggle bit is toggling and DQ5 has not gone high. The system may continue to monitor the toggle bit and DQ5 through successive read cycles, determining the status as described in the previous paragraph. Alternatively, it may choose to perform other system tasks. In this case, the system must start at the beginning of the algorithm when it returns to determine the status of the operation (top of Figure 6). Am29DL400B DQ5: Exceeded Timing Limits DQ5 indicates whether the program or erase time has exceeded a specified internal pulse count limit. Under these conditions DQ5 produces a “1,” indicatin g t ha t t he pr o gra m o r e ra se cycl e wa s no t successfully completed. START Read DQ7–DQ0 The device may output a “1” on DQ5 if the system tries to program a “1” to a location that was previously programmed to “0.” Only an erase operation can change a “0” back to a “1.” Under this condition, the device halts the operation, and when the timing limit has been exceeded, DQ5 produces a “1”. Read DQ7–DQ0 Toggle Bit = Toggle? Under both these conditions, the system must write the reset command to return to reading array data (or to the erase-suspend-read mode if a bank was previously in the erase-suspend-program mode). No DQ3: Sector Erase Timer Yes No After writing a sector erase command sequence, the system may read DQ3 to determine whether or not erasure has begun. (The sector erase timer does not apply to the chip erase command.) If additional sectors are selected for erasure, the entire time-out also applies after each additional sector erase command. When the time-out period is complete, DQ3 switches from a “0” to a “1”. If the system can guarantee the time between additional sector erase commands to be less than 50 µs, it need not monitor DQ3. See also the Sector Erase Command Sequence section. DQ5 = 1? Yes Read DQ7–DQ0 Twice Toggle Bit = Toggle? No Yes Program/Erase Operation Not Complete, Write Reset Command Program/Erase Operation Complete Note: The system should recheck the toggle bit even if DQ5 = “1” because the toggle bit may stop toggling as DQ5 changes to “1.” See the subsections on DQ6 and DQ2 for more information. Figure 6. Toggle Bit Algorithm After the sector erase command is written, the system should read the status of DQ7 (Data# Polling) or DQ6 (Toggle Bit I) to ensure that the device has accepted the command sequence, and then read DQ3. If DQ3 is “1”, the Embedded Erase algorithm has begun; all further commands (except Erase Suspend) are ignored until the erase operation is complete. If DQ3 is “0”, the device will accept additional sector erase commands. To ensure the command has been accepted, the system software should check the status of DQ3 prior to and following each subsequent sector erase command. If DQ3 is high on the second status check, the last command might not have been accepted. Table 6 shows the status of DQ3 relative to the other status bits. Am29DL400B 21 Table 6. Write Operation Status DQ7 (Note 2) DQ6 DQ5 (Note 1) DQ3 DQ2 (Note 2) DQ7# Toggle 0 N/A No toggle 0 0 Toggle 0 1 Toggle 0 Erase Suspended Sector 1 No toggle 0 N/A Toggle 1 Non-Erase Suspended Sector Data Data Data Data Data 1 DQ7# Toggle 0 N/A N/A 0 Status Standard Mode Embedded Program Algorithm Erase Suspend Mode Erase-SuspendRead Embedded Erase Algorithm Erase-Suspend-Program RY/BY# Notes: 1. DQ5 switches to ‘1’ when an Embedded Program or Embedded Erase operation has exceeded the maximum timing limits. Refer to the section on DQ5 for more information. 2. DQ7 and DQ2 require a valid address when reading status information. Refer to the appropriate subsection for further details. 3. When reading write operation status bits, the system must always provide the bank address where the Embedded Algorithm is in progress. The device outputs array data if the system addresses a non-busy bank. 22 Am29DL400B ABSOLUTE MAXIMUM RATINGS Storage Temperature Plastic Packages . . . . . . . . . . . . . .–65°C to +150°C A9, OE#, and RESET# (Note 2). . . . . . . –0.5 V to +12.5 V Ambient Temperature with Power Applied . . . . . . . . . . . .–65°C to +125°C All other pins (Note 1) . . . . . . . . . . . . . . –0.5 V to VCC+0.5 V Output Short Circuit Current (Note 3) . . . . . 200 mA Voltage with Respect to Ground VCC (Note 1) . . . . . . . . . . . . . .–0.5 V to +4.0 V Notes: 1. Minimum DC voltage on input or I/O pins is –0.5 V. During voltage transitions, input or I/O pins may undershoot VSS to –2.0 V for periods of up to 20 ns. Maximum DC voltage on input or I/O pins is VCC +0.5 V. See Figure 7. During voltage transitions, input or I/O pins may overshoot to VCC +2.0 V for periods up to 20 ns. See Figure 8. 2. Minimum DC input voltage on pins A9, OE#, and RESET# is –0.5 V. During voltage transitions, A9, OE#, and RESET# may undershoot VSS to –2.0 V for periods of up to 20 ns. See . Maximum DC input voltage on pin A9 is +12.5 V which may overshoot to 14.0 V for periods up to 20 ns. 3. No more than one output may be shorted to ground at a time. Duration of the short circuit should not be greater than one second. Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational sections of this data sheet is not implied. Exposure of the device to absolute maximum rating conditions for extended periods may affect device reliability. 20 ns 20 ns +0.8 V –0.5 V –2.0 V 20 ns Figure 7. Maximum Negative Overshoot Waveform 20 ns VCC +2.0 V VCC +0.5 V 2.0 V 20 ns 20 ns Figure 8. Maximum Positive Overshoot Waveform Am29DL400B 23 OPERATING RANGES Commercial (C) Devices Extended (E) Devices Ambient Temperature (TA). . . . . . . . . 0°C to +70°C Ambient Temperature (TA). . . . . . –55°C to +125°C Industrial (I) Devices VCC Supply Voltages Ambient Temperature (TA). . . . . . . –40°C to +85°C VCC for all devices . . . . . . . . . . . . . . 2.7 V to 3.6 V Operating ranges define those limits between which the functionality of the device is guaranteed. 24 Am29DL400B DC CHARACTERISTICS CMOS Compatible Parameter Symbol Parameter Description Test Conditions Min ILI Input Load Current VIN = VSS to VCC, VCC = VCC max ILIT A9 Input Load Current VCC = VCC max; A9 = 12.5 V ILO Output Leakage Current VOUT = VSS to VCC, VCC = VCC max ICC1 VCC Active Read Current (Notes 1, 2) Typ Max Unit ±1.0 µA 35 µA ±1.0 µA CE# = VIL, OE# = VIH, Byte Mode 5 MHz 7 12 1 MHz 2 4 CE# = VIL, OE# = VIH, Word Mode 5 MHz 7 12 1 MHz 2 4 mA ICC2 VCC Active Write Current (Notes 2, 3) CE# = VIL, OE# = VIH, WE# = VIL 15 30 mA ICC3 VCC Standby Current (Note 2) OE# = VIL; CE#, RESET# = VCC ± 0.3 V 0.2 5 µA ICC4 VCC Reset Current (Note 2) RESET# = VSS ± 0.3 V 0.2 5 µA ICC5 Automatic Sleep Mode (Notes 2, 4) VIH = VCC ± 0.3 V; VIL = VSS ± 0.3 V 0.2 5 µA VCC Active Read-WhileProgram Current (Notes 1, 2, 5) CE# = VIL, OE# = VIH Byte 21 45 ICC6 Word 21 45 ICC7 VCC Active Read-While-Erase Current (Notes 1, 2, 5) CE# = VIL, OE# = VIH Byte 21 45 Word 21 45 ICC8 VCC Active Program-WhileErase-Suspended Current (Notes 2, 5) CE# = VIL, OE# = VIH 17 35 mA VIL Input Low Voltage –0.5 0.8 V VIH Input High Voltage 0.7 x VCC VCC + 0.3 V VID Voltage for Autoselect and Temporary Sector Unprotect VCC = 3.0 V ± 10% 11.5 12.5 V VOL Output Low Voltage IOL = 4.0 mA, VCC = VCC min 0.45 V VOH1 VOH2 VLKO Output High Voltage IOH = –2.0 mA, VCC = VCC min 0.85 VCC IOH = –100 µA, VCC = VCC min VCC–0.4 Low VCC Lock-Out Voltage (Note 5) 2.3 mA mA V 2.5 V Notes: 1. The ICC current listed is typically less than 2 mA/MHz, with OE# at VIH. 2. Maximum ICC specifications are tested with VCC = VCCmax. 3. ICC active while Embedded Erase or Embedded Program is in progress. 4. Automatic sleep mode enables the low power mode when addresses remain stable for tACC + 30 ns. Typical sleep mode current is 200 nA. 5. Not 100% tested. Am29DL400B 25 DC CHARACTERISTICS Zero-Power Flash Supply Current in mA 20 15 10 5 0 0 500 1000 1500 2000 2500 3000 3500 4000 Time in ns Note: Addresses are switching at 1 MHz Figure 9. ICC1 Current vs. Time (Showing Active and Automatic Sleep Currents) 10 Supply Current in mA 8 3.6 V 6 2.7 V 4 2 0 1 2 3 Frequency in MHz Note: T = 25 °C Figure 10. 26 Typical ICC1 vs. Frequency Am29DL400B 4 5 TEST CONDITIONS 3.3 V 2.7 kΩ Device Under Test CL 6.2 kΩ Note: Diodes are IN3064 or equivalent Figure 11. Test Setup Table 7. Test Specifications Test Condition -70, -80 All others Output Load Unit 1 TTL gate Output Load Capacitance, CL (including jig capacitance) 30 Input Rise and Fall Times 100 pF 5 ns 0.0–3.0 V Input timing measurement reference levels 1.5 V Output timing measurement reference levels 1.5 V Input Pulse Levels Key to Switching Waveforms WAVEFORM INPUTS OUTPUTS Steady Changing from H to L Changing from L to H 3.0 V Input Don’t Care, Any Change Permitted Changing, State Unknown Does Not Apply Center Line is High Impedance State (High Z) 1.5 V Measurement Level 1.5 V Output 0.0 V Figure 12. Input Waveforms and Measurement Levels Am29DL400B 27 AC CHARACTERISTICS Read-Only Operations Parameter Speed Options JEDEC Std Description tAVAV tRC Read Cycle Time (Note 1) tAVQV tACC Address to Output Delay tELQV tCE Chip Enable to Output Delay tGLQV tOE tEHQZ Test Setup -70 -80 -90 -120 Unit Min 70 80 90 120 ns CE#, OE# = VIL Max 70 80 90 120 ns OE# = VIL Max 70 80 90 120 ns Output Enable to Output Delay Max 30 30 35 50 ns tDF Chip Enable to Output High Z (Note 1) Max 16 ns tGHQZ tDF Output Enable to Output High Z (Note 1) Max 16 ns tAXQX tOH Output Hold Time From Addresses, CE# or OE#, Whichever Occurs First Min 0 ns Read Min 0 ns tOEH Output Enable Hold Time (Note 1) Toggle and Data# Polling Min 10 ns Notes: 1. Not 100% tested. 2. See Figure 11 and Table 7 for test specifications. tRC Addresses Stable Addresses tACC CE# tRH tRH tDF tOE OE# tOEH WE# tCE tOH HIGH Z HIGH Z Output Valid Outputs RESET# RY/BY# 0V Figure 13. Read Operation Timings 28 Am29DL400B AC CHARACTERISTICS Hardware Reset (RESET#) Parameter JEDEC Std Description All Speed Options Unit tReady RESET# Pin Low (During Embedded Algorithms) to Read Mode (See Note) Max 20 µs tReady RESET# Pin Low (NOT During Embedded Algorithms) to Read Mode (See Note) Max 500 ns tRP RESET# Pulse Width Min 500 ns tRH Reset High Time Before Read (See Note) Min 50 ns tRPD RESET# Low to Standby Mode Min 20 µs tRB RY/BY# Recovery Time Min 0 ns Note: Not 100% tested. RY/BY# CE#, OE# tRH RESET# tRP tReady Reset Timings NOT during Embedded Algorithms Reset Timings during Embedded Algorithms tReady RY/BY# tRB CE#, OE# RESET# tRP Figure 14. Reset Timings Am29DL400B 29 AC CHARACTERISTICS Word/Byte Configuration (BYTE#) Parameter JEDEC Std Speed Options Description -70 -80 -90 5 Unit tELFL/tELFH CE# to BYTE# Switching Low or High Max ns tFLQZ BYTE# Switching Low to Output HIGH Z Max 25 25 30 30 ns tFHQV BYTE# Switching High to Output Active Min 70 80 90 120 ns CE# OE# BYTE# BYTE# Switching from word to byte mode DQ0–DQ14 tELFL Data Output (DQ0–DQ14) Address Input DQ15 Output DQ15/A-1 Data Output (DQ0–DQ7) tFLQZ tELFH BYTE# BYTE# Switching from byte to word mode Data Output (DQ0–DQ7) DQ0–DQ14 Address Input DQ15/A-1 Data Output (DQ0–DQ14) DQ15 Output tFHQV Figure 15. BYTE# Timings for Read Operations CE# The falling edge of the last WE# signal WE# BYTE# tSET (tAS) tHOLD (tAH) Note: Refer to the Erase/Program Operations table for tAS and tAH specifications. Figure 16. 30 -120 BYTE# Timings for Write Operations Am29DL400B AC CHARACTERISTICS Erase and Program Operations Parameter Speed Options JEDEC Std Description tAVAV tWC Write Cycle Time (Note 1) Min tAVWL tAS Address Setup Time Min tASO Address Setup Time to OE# low during toggle bit polling Min 45 45 45 50 ns tAH Address Hold Time Min 45 45 45 50 ns tAHT Address Hold Time From CE# or OE# high during toggle bit polling Min tDVWH tDS Data Setup Time Min tWHDX tDH Data Hold Time Min tOEPH Output Enable High during toggle bit polling Min tGHWL tGHWL Read Recovery Time Before Write (OE# High to WE# Low) Min 0 ns tELWL tCS CE# Setup Time Min 0 ns tWHEH tCH CE# Hold Time Min 0 ns tWLWH tWP Write Pulse Width Min tWHDL tWPH Write Pulse Width High Min 30 ns tSR/W Zero Latency Between Read and Write Operations Min 0 ns Byte Typ 9 Word Typ 11 tWLAX -70 -80 -90 -120 Unit 70 80 90 120 ns 0 ns 0 35 35 ns 45 50 0 20 35 20 ns 20 35 ns 35 25 50 ns ns tWHWH1 tWHWH1 Programming Operation (Note 2) tWHWH2 tWHWH2 Sector Erase Operation (Note 2) Typ 0.7 sec tVCS VCC Setup Time (Note 1) Min 50 µs tRB Write Recovery Time from RY/BY# Min 0 ns Program/Erase Valid to RY/BY# Delay Min 90 ns tBUSY µs Notes: 1. Not 100% tested. 2. See the “Erase and Programming Performance” section for more information. Am29DL400B 31 AC CHARACTERISTICS Program Command Sequence (last two cycles) tAS tWC Addresses Read Status Data (last two cycles) 555h PA PA PA tAH CE# tCH OE# tWHWH1 tWP WE# tWPH tCS tDS tDH PD A0h Data Status DOUT tBUSY tRB RY/BY# VCC tVCS Notes: 1. PA = program address, PD = program data, DOUT is the true data at the program address. 2. Illustration shows device in word mode. Figure 17. Program Operation Timings tAS tWC 2AAh Addresses VA SA VA 555h for chip erase tAH CE# tCH OE# tWP WE# tWPH tCS tWHWH2 tDS tDH Data 55h In Progress 30h Complete 10 for Chip Erase tBUSY tRB RY/BY# tVCS VCC Notes: 1. SA = sector address (for Sector Erase), VA = Valid Address for reading status data (see “Write Operation Status” ). 2. Illustration shows device in word mode. Figure 18. Chip/Sector Erase Operation Timings 32 Am29DL400B AC CHARACTERISTICS Addresses tWC tWC tRC Valid PA Valid RA tWC Valid PA Valid PA tAH tCPH tACC tCE CE# tCP tOE OE# tOEH tGHWL tWP WE# tDF tWPH tDS tOH tDH Valid Out Valid In Data Valid In Valid In tSR/W WE# Controlled Write Cycle Read Cycle Figure 19. CE# Controlled Write Cycles Back-to-Back Read/Write Cycle Timings tRC Addresses VA VA VA tACC tCE CE# tCH tOE OE# tOEH tDF WE# tOH High Z DQ7 Complement Complement DQ0–DQ6 Status Data Status Data True Valid Data High Z True Valid Data tBUSY RY/BY# Note: VA = Valid address. Illustration shows first status cycle after command sequence, last status read cycle, and array data read cycle. Figure 20. Data# Polling Timings (During Embedded Algorithms) Am29DL400B 33 AC CHARACTERISTICS tAHT tAS Addresses tAHT tASO CE# tCEPH tOEH WE# tOEPH OE# tDH DQ6/DQ2 tOE Valid Data Valid Status Valid Status Valid Status (first read) (second read) (stops toggling) Valid Data RY/BY# Note: VA = Valid address; not required for DQ6. Illustration shows first two status cycle after command sequence, last status read cycle, and array data read cycle Figure 21. Toggle Bit Timings (During Embedded Algorithms) Enter Embedded Erasing WE# Erase Suspend Erase Enter Erase Suspend Program Erase Suspend Program Erase Suspend Read Erase Resume Erase Suspend Read Erase Erase Complete DQ6 DQ2 Note: DQ2 toggles only when read at an address within an erase-suspended sector. The system may use OE# or CE# to toggle DQ2 and DQ6. Figure 22. 34 DQ2 vs. DQ6 Am29DL400B AC CHARACTERISTICS Temporary Sector Unprotect Parameter JEDEC Std tVIDR Description VID Rise and Fall Time (See Note) All Speed Options Unit Min 500 ns tRSP RESET# Setup Time for Temporary Sector Unprotect Min 4 µs tRRB RESET# Hold Time from RY/BY# High for Temporary Sector Unprotect Min 4 µs Note: Not 100% tested. 12 V RESET# 0 V or 3 V 0 V or 3 V tVIDR tVIDR Program or Erase Command Sequence CE# WE# tRRB tRSP RY/BY# Figure 23. Temporary Sector Unprotect Timing Diagram Am29DL400B 35 AC CHARACTERISTICS VID VIH RESET# SA, A6, A1, A0 Valid* Valid* Sector Protect/Unprotect Data 60h Verify 60h 40h Sector Protect: 100 µs Sector Unprotect: 10 ms 1 µs CE# WE# OE# * For sector protect, A6 = 0, A1 = 1, A0 = 0. For sector unprotect, A6 = 1, A1 = 1, A0 = 0. Figure 24. 36 Valid* Sector Protect/Unprotect Timing Diagram Am29DL400B Status AC CHARACTERISTICS Alternate CE# Controlled Erase/Program Operations Parameter Speed Options JEDEC Std Description tAVAV tWC Write Cycle Time (Note 1) Min tAVWL tAS Address Setup Time Min tELAX tAH Address Hold Time Min 45 45 tDVEH tDS Data Setup Time Min 35 35 tEHDX tDH Data Hold Time Min 0 ns tGHEL tGHEL Read Recovery Time Before Write (OE# High to WE# Low) Min 0 ns tWLEL tWS WE# Setup Time Min 0 ns tEHWH tWH WE# Hold Time Min 0 ns tELEH tCP CE# Pulse Width Min tEHEL tCPH CE# Pulse Width High Min tWHWH1 tWHWH1 Programming Operation (Note 2) tWHWH2 tWHWH2 Sector Erase Operation (Note 2) -70 -80 -90 -120 Unit 70 80 90 120 ns 0 35 35 ns 45 50 45 50 35 30 Byte Typ 9 Word Typ 11 Typ 0.7 50 ns ns ns ns µs sec Notes: 1. Not 100% tested. 2. See the “Erase and Programming Performance” section for more information. Am29DL400B 37 AC CHARACTERISTICS 555 for program 2AA for erase PA for program SA for sector erase 555 for chip erase Data# Polling Addresses PA tWC tAS tAH tWH WE# tGHEL OE# tWHWH1 or 2 tCP CE# tWS tCPH tBUSY tDS tDH DQ7# Data tRH A0 for program 55 for erase DOUT PD for program 30 for sector erase 10 for chip erase RESET# RY/BY# Notes: 1. Figure indicates last two bus cycles of a program or erase operation. 2. PA = program address, SA = sector address, PD = program data, DQ7# = complement of the data written to the device, DOUT = data written to the device. 3. Waveforms are for the word mode. Figure 25. Alternate CE# Controlled Erase/Program Operation Timings 38 Am29DL400B ERASE AND PROGRAMMING PERFORMANCE Typ (Note 1) Max (Note 2) Unit Comments Sector Erase Time 0.7 15 sec Chip Erase Time 10 Excludes 00h programming prior to erasure (Note 4) Parameter sec Byte Program Time 9 300 µs Word Program Time 11 360 µs Byte Mode 4.5 13.5 Word Mode 2.9 8.7 Chip Program Time (Note 3) Notes: 1. Typical program and erase times assume the following conditions: 25°C, 3.0 V VCC, 1,000,000 cycles. Additionally, programming typicals assume checkerboard pattern. 2. Under worst case conditions of 90°C, VCC = 2.7 V, 1,000,000 cycles. 3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most bytes program faster than the maximum program times listed. Excludes system level overhead (Note 5) sec 4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure. 5. System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program command. See Table 5 for further information on command definitions. 6. The device has a guaranteed minimum erase and program cycle endurance of 1,000,000 cycles. Am29DL400B 39 LATCHUP CHARACTERISTICS Min Max Input voltage with respect to VSS on all pins except I/O pins (including A9, OE#, and RESET#) –1.0 V 12.5 V Input voltage with respect to VSS on all I/O pins –1.0 V VCC + 1.0 V –100 mA +100 mA VCC Current Includes all pins except VCC. Test conditions: VCC = 3.0 V, one pin at a time. TSOP AND SO PIN CAPACITANCE Parameter Symbol Parameter Description Test Setup Typ Max Unit CIN Input Capacitance VIN = 0 6 7.5 pF COUT Output Capacitance VOUT = 0 8.5 12 pF CIN2 Control Pin Capacitance VIN = 0 7.5 9 pF Notes: 1. Sampled, not 100% tested. 2. Test conditions TA = 25°C, f = 1.0 MHz. DATA RETENTION Parameter Description Minimum Pattern Data Retention Time 40 Am29DL400B Test Conditions Min Unit 150°C 10 Years 125°C 20 Years PHYSICAL DIMENSIONS* TS 048—48-Pin Standard TSOP Dwg rev AA; 10/99 * For reference only. BSC is an ANSI standard for Basic Space Centering Am29DL400B 41 PHYSICAL DIMENSIONS (continued) TSR048—48-Pin Reverse TSOP Dwg rev AA; 10/99 * For reference only. BSC is an ANSI standard for Basic Space Centering. 42 Am29DL400B PHYSICAL DIMENSIONS (continued) SO 044—44-Pin Small Outline Dwg rev AC; 10/99 Am29DL400B 43 REVISION SUMMARY Revision A (January 1998) Distinctive Characterisitics Added 20 Year data retention at 125° C bullet. Initial release. Revision B (March 1998) Ordering Information Expanded data sheet from Advance Information to Preliminary version. Revision D+1 (March 23, 1999) Corrected TSOP description to 48-pin. Revision C (April 1998) AC Characteristics, Read-only Operations table Global Corrected tRC, tACC, and tCE for 90 ns speed option to 90 ns. Changed -70R speed option to -70. Figure 1, In-system Sector Protect/Unprotect Algorithm Added “PSLSCNT=1” to sector protect algorithm. Reset Command Deleted last paragraph; applies only to hardware reset. Revision E (December 7, 1999) AC Characteristics—Figure 17. Program Operations Timing and Figure 18. Chip/Sector Erase Operations Deleted tGHWL and changed OE# waveform to start at high. Physical Dimensions DQ6: Toggle Bit I Replaced figures with more detailed illustrations. First and second para., clarified that the toggle bit may be read “at any address within the programming or erasing bank,” not at “any address.” Fourth para., clarified “device” to “bank” Revision E+1 (May 12, 2000) Operating Ranges Ordering Information Optional processing: Deleted the burn-in option AC Characteristics—Read-Only Operations Deleted reference to regulated voltage range Changed tDF to 16 ns for all speeds. DC Characteristics Revision E+2 (November 21, 2000) Added Note 4 reference to ICC6 and ICC7. Added table of contents. Erase and Program Operations Revision E+3 (January 7, 2005) Corrected note references for tWHWH1, tWHWH2, and tVCS Global Temporary Sector Unprotect Added Colophon Added note reference to tVIDR. Updated Trademark Figure 24, Sector Protect/Unprotect Timing Diagram Updated fonts Updated figure to correct address waveform—valid address not required in first cycle. Alternate CE# Controlled Erase/Program Operations Ordering Information Added temperature ranges for Pb-free (Lead-free) Packages Added new valid combinations. Revision E+4 (June 7, 2005) Corrected note references for tWHWH1, tWHWH2 Erase and Programming Performance Cover page and Title page In Note 2, changed worst case endurance to 1 million cycles. Updated EOL disclaimers. Added notation to superseding documents. Revision D (June 1999) 44 Am29DL400B Colophon The products described in this document are designed, developed and manufactured as contemplated for general use, including without limitation, ordinary industrial use, general office use, personal use, and household use, but are not designed, developed and manufactured as contemplated (1) for any use that includes fatal risks or dangers that, unless extremely high safety is secured, could have a serious effect to the public, and could lead directly to death, personal injury, severe physical damage or other loss (i.e., nuclear reaction control in nuclear facility, aircraft flight control, air traffic control, mass transport control, medical life support system, missile launch control in weapon system), or (2) for any use where chance of failure is intolerable (i.e., submersible repeater and artificial satellite). Please note that Spansion LLC will not be liable to you and/or any third party for any claims or damages arising in connection with abovementioned uses of the products. Any semiconductor devices have an inherent chance of failure. You must protect against injury, damage or loss from such failures by incorporating safety design measures into your facility and equipment such as redundancy, fire protection, and prevention of over-current levels and other abnormal operating conditions. If any products described in this document represent goods or technologies subject to certain restrictions on export under the Foreign Exchange and Foreign Trade Law of Japan, the US Export Administration Regulations or the applicable laws of any other country, the prior authorization by the respective government entity will be required for export of those products. Trademarks Copyright © 2005 Advanced Micro Devices, Inc. All rights reserved. AMD, the AMD logo, and combinations thereof are registered trademarks of Advanced Micro Devices, Inc. ExpressFlash is a trademark of Advanced Micro Devices, Inc. Product names used in this publication are for identification purposes only and may be trademarks of their respective companies Am29DL400B 45