AGN1440 AGN1440 Data Sheet Ku Band GaN Power Amplifier MMIC 1. Product Overview 1.1 General Description AGN1440 is a two-stage internally matched GaN MMIC Power Amplifier which operates between 13.75GHz and 14.50 GHz frequency range. This product is well suited for VSAT applications. 1.2 Features Frequency Range: 13.75 - 14.50 GHz Saturated Output Power: 41 dBm Power Added Efficiency: 28 % Small Signal Gain: 18.5 dB Output Third Order Intercept Point: 43 dBm Bias: VDD = +28 V, IDD = 350 mA, VGG = -2.8 V (Typical) 100% DC and RF tested 1.3 Applications Ku Band VSAT Point to Point Radio 1.4 Package Profile & RoHS Compliance 10-lead Flange Package 1/11 ASB Inc. [email protected] RoHS-compliant June 2015 AGN1440 2. Summary on Product Performances 2.1 Typical Performance Test conditions : T = +25 C, VDD = +28 V, CW, ZO = 50 Parameters Test Conditions Gate Bias Voltage Output Power at Power Gain at f = 13.75 - 14.50 GHz Psat1) Psat1) Drain Current at Min Psat1) Typ Max Units -2.8 -2.5 V f = 13.75 - 14.50 GHz 39 41 dBm f = 13.75 - 14.50 GHz 9 11 dB f = 13.75 - 14.50 GHz 1700 f = 13.75 - 14.50 GHz 28 Gain Flatness f = 13.75 - 14.50 GHz 0.5 1.0 dB Input Return Loss f = 13.75 - 14.50 GHz -10 -6 dB Output Return Loss f = 13.75 - 14.50 GHz -14 -10 dB Power Added Efficiency at Psat1) Δf = 10 MHz 2-Tone Test Output power / Tone = +32 dBm VDD = +28 V Output TOI2) Supply Current 1900 mA % 43 dBm 350 mA 1) Psat: Saturated output power 2) TOI: Third order intercept point 2.2 Product Specification Test conditions : T = +25 C, VDD= +28 V, CW, VGG = -2.8 V typical, ZO = 50 Parameter Min Typ Max Frequency 13.75 Small Signal Gain 18 14.50 18.5 Unit GHz dB Input Return Loss -10 -6 dB Output Return Loss -14 -10 dB Supply Current 350 mA 2.3 Absolute Maximum Ratings 2/11 Parameters Max. Ratings Operating Case Temperature (Tc) -40 to 85 C Storage Temperature (Tstg) -55 to 125 C Drain Voltage (VDD) +35 V Gate Voltage (VGG) -5.0 to -2.5 V Input RF Power (Pin) +35 dBm ASB Inc. [email protected] June 2015 AGN1440 2.4 Pin Descriptions 3/11 ASB Inc. Pin Pin Name Description 1,5 Vg Gate voltage 3 RF IN Input, matched to 50 ohms 6,10 Vd Drain voltage 8 RF OUT 2,4,7,9 NC Output, matched to 50 ohms No internal connection ( open or connected to GND ) [email protected] June 2015 AGN1440 3. Application: 13.75 ~ 14.50 GHz 3.1 Application Circuit Note 1: The capacitors are recommended on the bias supply line, close to the package, in order to prevent video oscillations which could damage the module. 3.2 Biasing Procedure 4/11 Make sure no RF power is applied to the device before continuing. Pinch off device by setting VGG to -3.5 V. Raise VDD to +28 V while monitoring drain current. Raise VGG until drain current reaches 350 mA. VGG should be between -3.5 and -2.5 V. Apply RF power. To improve the thermal and RF performance, ASB recommends a heat sinker attached to the bottom of the package with an Indium alloy preform. ASB Inc. [email protected] June 2015 AGN1440 3.3 Plots of Performances S-parameter Input / Output Return Loss vs. Frequency Input / Output Return Loss (dB) VDD = +28 V, IDD = 350 mA, Pin = -20 dBm 0 -5 -10 -15 -20 Input Return Loss -25 Output Return Loss -30 12 12.5 13 13.5 14 14.5 Frequency (GHz) 15 15.5 16 15.5 16 Small Signal Gain vs. Frequency VDD = +28 V, IDD = 350 mA, Pin = -20 dBm Small Signal Gain (dB) 24 20 16 12 8 4 0 12 5/11 12.5 13 ASB Inc. 13.5 14 14.5 Frequency (GHz) [email protected] 15 June 2015 Output Power, IDD vs. Input Power VDD = +28 V, IDD = 350 mA VDD = +28 V, IDD = 350 mA 46 44 42 40 38 36 34 32 30 28 26 24 22 20 18 16 Pin = +20 dBm Pin = +10 dBm Pin = +0 dBm Power Added Efficiency (%) 2200 40 2000 36 1800 32 1600 28 1400 24 1200 20 1000 16 800 12 600 8 400 4 200 0 13 13.5 14 Frequency (GHz) 14.5 0 -10 15 -5 0 5 10 15 20 Input Power (dBm) 25 30 Power Added Efficiency vs. Frequency Output TOI vs. Output Power / Tone VDD = +28 V, IDD = 350 mA VDD = +28 V, IDD = 350 mA, Δf = 10 MHz 35 52 36 34 32 30 28 26 24 22 20 18 16 14 12 10 8 6 4 2 0 50 Pin = +30 dBm 48 46 Pin = +20 dBm 44 42 40 38 Pin = +10 dBm 36 34 Pin = +0 dBm 13 6/11 Output Power (dBm) Pin = +30 dBm 44 13.5 14 Frequency (GHz) 14.5 32 15 ASB Inc. 18 [email protected] 20 22 24 26 28 30 32 34 Output Power / Tone (dBm) 36 38 40 June 2015 IDD (mA) Output Power vs. Frequency TOI (dBm) Output Power (dBm) AGN1440 AGN1440 Output Power, Drain Current vs. Input Power by Temperature 2200 44 2200 40 2000 40 2000 36 1800 36 1800 32 1600 32 1600 28 1400 28 1400 24 1200 24 1200 20 1000 20 1000 16 800 16 800 12 600 12 600 8 400 8 400 4 200 4 200 0 0 0 0 -5 0 5 10 15 20 Input Power (dBm) 25 30 -10 35 5 10 15 20 Input Power (dBm) 25 30 35 2200 44 2200 40 2000 40 2000 36 1800 36 1800 32 1600 32 1600 28 1400 28 1400 24 1200 24 1200 20 1000 20 1000 16 800 16 800 12 600 12 600 8 400 8 400 4 200 4 200 0 0 -10 -5 0 5 10 15 20 Input Power (dBm) 25 30 0 -10 35 ASB Inc. Output Power (dBm) 44 0 7/11 0 VDD = +28 V, IDD = 350 mA @ 14.50 GHz IDD (mA) Output Power (dBm) VDD = +28 V, IDD = 350 mA @ 14.25 GHz -5 IDD (mA) -10 Output Power (dBm) 44 IDD (mA) VDD = +28 V, IDD = 350 mA @ 14.00 GHz IDD (mA) Output Power (dBm) VDD = +28 V, IDD = 350 mA @ 13.75 GHz [email protected] -5 0 5 10 15 20 Input Power (dBm) 25 30 35 June 2015 AGN1440 VDD = +28 V, IDD = 350 mA Δf = 10 MHz VDD = +28 V, IDD = 350 mA Δf = 10 MHz @ 13.75 GHz @ 14.00 GHz 52 52 50 50 48 48 46 46 44 44 TOI (dBm) TOI (dBm) Output TOI vs. Output Power / Tone by Temperature 42 40 40 38 38 36 36 34 34 32 32 18 20 22 24 26 28 30 32 34 Output Power / Tone (dBm) 36 38 18 40 22 24 26 28 30 32 34 Output Power / Tone (dBm) 36 VDD = +28 V, IDD = 350 mA, Δf = 10 MHz @ 14.25 GHz @ 14.50 GHz 52 52 50 50 48 48 46 46 44 44 42 40 36 36 34 34 32 32 20 22 24 26 28 30 32 34 Output Power / Tone (dBm) 36 38 18 40 ASB Inc. 40 38 40 40 38 18 38 42 38 8/11 20 VDD = +28 V, IDD = 350 mA, Δf = 10 MHz TOI (dBm) TOI (dBm) 42 [email protected] 20 22 24 26 28 30 32 34 Output Power / Tone (dBm) 36 June 2015 AGN1440 Output Power vs. Frequency Output TOI vs. Temperature VDD = +28 V, IDD = 350 mA, Pin = +30 dBm, CW VDD = +28 V, IDD = 350 mA, Δf = 10 MHz, Output Power / Tone = +32 dBm 54 48 52 46 44 48 TOI (dBm) Output Power (dBm) 50 42 40 46 44 42 40 38 38 36 36 34 34 13 9/11 13.5 14 Frequency (GHz) 14.5 15 ASB Inc. -60 [email protected] -40 -20 0 20 40 Temperature 60 80 100 June 2015 AGN1440 4. Mounting Instructions for Flange Package 4.1 Screw Mounting 4.1.1 The flange of package should be attached using screws. Torque conditions are shown in table 1. Table 1. Recommended and Maximum Torque for Screw Mounting Package Recommended Screw Recommended Torque Maximum Torque Flange M2.0 10 N-cm (0.9 lb-in) 15 N-cm (1.3 lb-in) 4.1.2 First, tighten the screws with a torque driver set to 5 N-cm 4.1.3 The surface finish of the heat sinker should be better than 0.8 µm and the surface flatness must be better than 10 µm. 4.1.4 Silicon based heat sink compounds should not be used for the thermal conductive grease. It causes the poor grounding of the source flange, contamination, and long term degradation of thermal resistance between the package and heat sinker. 4.2. Solder Mounting 4.2.1 Recommended solder is lead-free solder (Sn-3.0Ag-0.5Cu) or equivalent. 4.2.2 After soldering, the flux residue should be removed by appropriate cleaning methods. 4.2.3 The recommended soldering conditions are as follows: Partial heating method: Soldering iron, spot laser/air Product terminal temperature: 260°C, max. 10 sec/terminal or 400°C, max. 3 sec/terminal 10/11 ASB Inc. [email protected] June 2015 AGN1440 5. Package Outline Units: mm [in] ＊Please note the 1.51 mm of the height of the lead from the bottom of the metal base when it is to be mounted. (End of Datasheet) 11/11 ASB Inc. [email protected] June 2015