ADPOW APTM120TDU57P Triple dual common source mosfet power module Datasheet

APTM120TDU57P
Triple dual common source
MOSFET Power Module
D5
G3
G1
G5
S3
S1
S5
S1/S2
S3/S4
S5/S6
S2
S4
S6
G2
G4
G6
D2
D4
D1
D3
D2
S1
Features
• Power MOS 7® MOSFETs
- Low RDSon
- Low input and Miller capacitance
- Low gate charge
- Avalanche energy rated
- Very rugged
• Kelvin source for easy drive
• Very low stray inductance
- Symmetrical design
- Lead frames for power connections
• High level of integration
D6
G1
S1/S2
Application
• AC Switches
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
D5
G3
S3/S4
S3
G5
S5/S6
S5
S2
S4
S6
G2
G4
G6
D4
D6
Benefits
• Outstanding performance at high frequency operation
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Solderable terminals both for power and signal for
easy PCB mounting
• Very low (12mm) profile
• Each leg can be easily paralleled to achieve a dual
common source configuration of three times the
current capability
Absolute maximum ratings
Symbol
VDSS
ID
IDM
VGS
RDSon
PD
IAR
EAR
EAS
Parameter
Drain - Source Breakdown Voltage
Tc = 25°C
Tc = 80°C
Continuous Drain Current
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Tc = 25°C
Max ratings
1200
17
13
68
±30
570
390
22
50
3000
Unit
V
A
V
mΩ
W
A
mJ
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website – http://www.advancedpower.com
1–6
APTM120TDU57P– Rev 0 September, 2004
D3
D1
VDSS = 1200V
RDSon = 570mΩ max @ Tj = 25°C
ID = 17A @ Tc = 25°C
APTM120TDU57P
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
IDSS
RDS(on)
VGS(th)
IGSS
Characteristic
Drain - Source Breakdown Voltage
Zero Gate Voltage Drain Current
Drain – Source on Resistance
Gate Threshold Voltage
Gate – Source Leakage Current
Dynamic Characteristics
Symbol
Ciss
Coss
Crss
Qg
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total gate Charge
Qgs
Gate – Source Charge
Qgd
Gate – Drain Charge
Td(on)
Turn-on Delay Time
Tr
Td(off)
Test Conditions
VGS = 0V, ID = 250µA
Min
1200
VGS = 0V,VDS = 1200V
T j = 25°C
VGS = 0V,VDS = 1000V
T j = 125°C
VGS = 10V, ID = 8.5A
VGS = VDS, ID = 2.5mA
VGS = ±30 V, VDS = 0V
Test Conditions
VGS = 0V
VDS = 25V
f = 1MHz
Turn-off Delay Time
Tf
Fall Time
Eon
Turn-on Switching Energy X
Eoff
Turn-off Switching Energy Y
Eon
Turn-on Switching Energy X
Eoff
Turn-off Switching Energy Y
Min
VGS = 10V
VBus = 600V
ID = 17A
Qrr
Reverse Recovery Charge
Typ
5155
770
130
187
Unit
V
100
500
570
5
±100
mΩ
V
nA
Max
Unit
µA
pF
nC
120
20
15
45
990
Inductive switching @ 125°C
VGS = 15V, VBus = 800V
ID = 17A, R G = 5Ω
1565
Test Conditions
ns
160
Inductive switching @ 25°C
VGS = 15V, VBus = 800V
ID = 17A, R G = 5Ω
µJ
685
µJ
857
Min
Typ
Tc = 25°C
Tc = 80°C
VGS = 0V, IS = - 17A
IS = - 17A
VR = 600V
diS/dt = 100A/µs
Max
24
Source - Drain diode ratings and characteristics
Symbol Characteristic
IS
Continuous Source current
(Body diode)
VSD
Diode Forward Voltage
dv/dt Peak Diode Recovery Z
trr
Reverse Recovery Time
3
Inductive switching @ 125°C
VGS = 15V
VBus = 800V
ID = 17A
R G = 5Ω
Rise Time
Typ
Max
17
13
1.3
10
Unit
A
Tj = 25°C
1291
V
V/ns
ns
Tj = 25°C
29
µC
X Eon includes diode reverse recovery.
Y In accordance with JEDEC standard JESD24-1.
Z dv/dt numbers reflect the limitations of the circuit rather than the device itself.
IS ≤ - 17A di/dt ≤ 700A/µs
VR ≤ VDSS
Tj ≤ 150°C
APT website – http://www.advancedpower.com
2–6
APTM120TDU57P– Rev 0 September, 2004
Symbol
BVDSS
APTM120TDU57P
Thermal and package characteristics
Symbol
RthJC
VISOL
TJ
TSTG
TC
Torque
Wt
Characteristic
Junction to Case
Min
IGBT
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Mounting torque
Package Weight
To heatsink
M6
2500
-40
-40
-40
3
Typ
Max
0.32
150
125
100
5
250
Unit
°C/W
V
°C
N.m
g
Package outline
APT website – http://www.advancedpower.com
3–6
APTM120TDU57P– Rev 0 September, 2004
5 places (3:1)
APTM120TDU57P
Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Thermal Impedance (°C/W)
0.35
0.3
0.9
0.25
0.7
0.2
0.5
0.15
0.3
0.1
0.05
0.1
0.05
0
0.00001
Single Pulse
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
Low Voltage Output Characteristics
Transfert Characteristics
80
50
40
7V
6.5V
30
20
6V
10
5.5V
5
10
15
20
25
60
50
40
30
TJ=25°C
20
10
5V
0
0
VDS > ID(on)xRDS (on)MAX
250µs pulse test @ < 0.5 duty cycle
70
ID, Drain Current (A)
TJ=125°C
30
0
ID, DC Drain Current (A)
RDS(on) Drain to Source ON Resistance
VGS=10V
1.1
VGS=20V
1
3
4
5
6
7
8
9
20
Normalized to
VGS=10V @ 8.5A
1.2
2
DC Drain Current vs Case Temperature
RDS(on) vs Drain Current
1.3
1
VGS, Gate to Source Voltage (V)
VDS , Drain to Source Voltage (V)
1.4
TJ =-55°C
0
0.9
0.8
16
12
8
4
0
0
10
20
30
ID, Drain Current (A)
40
25
50
75
100
125
150
TC, Case Temperature (°C)
APT website – http://www.advancedpower.com
4–6
APTM120TDU57P– Rev 0 September, 2004
I D, Drain Current (A)
V GS=15, 10 & 8V
1.10
1.05
1.00
0.95
0.90
0.85
-50 -25
0
25 50 75 100 125 150
ON resistance vs Temperature
2.5
VGS =10V
ID=8.5A
2.0
1.5
1.0
0.5
0.0
-50 -25
Threshold Voltage vs Temperature
50
75 100 125 150
Maximum Safe Operating Area
100µs
1.1
I D, Drain Current (A)
VGS(TH), Threshold Voltage
(Normalized)
25
100
1.2
1.0
0.9
0.8
0.7
limited by RDSon
1ms
10
10ms
Single pulse
TJ =150°C
1
0.6
-50 -25 0 25 50 75 100 125 150
TC, Case Temperature (°C)
1
Capacitance vs Drain to Source Voltage
10000
Ciss
Coss
1000
Crss
100
0
10
20
30
40
50
VDS, Drain to Source Voltage (V)
1200
10
100
1000
VDS , Drain to Source Voltage (V)
Gate Charge vs Gate to Source Voltage
VGS, Gate to Source Voltage (V)
100000
C, Capacitance (pF)
0
TJ, Junction Temperature (°C)
TJ, Junction Temperature (°C)
14
I D=17A
TJ=25°C
12
V DS=240V
10
VDS=600V
8
V DS =960V
6
4
2
0
0
40
APT website – http://www.advancedpower.com
80
120
160
200
240
Gate Charge (nC)
5–6
APTM120TDU57P– Rev 0 September, 2004
BVDSS, Drain to Source Breakdown
Voltage (Normalized)
Breakdown Voltage vs Temperature
1.15
RDS(on), Drain to Source ON resistance
(Normalized)
APTM120TDU57P
APTM120TDU57P
Delay Times vs Current
t d(off)
160
140
VDS=800V
RG=5Ω
TJ=125°C
L=100µH
60
120
tr and tf (ns)
td(on) and td(off) (ns)
Rise and Fall times vs Current
80
180
V DS=800V
RG =5Ω
T J=125°C
L=100µH
100
80
60
40
tr
20
td(on)
40
tf
20
0
0
5
10
15
20
25
30
35
5
10
I D, Drain Current (A)
35
4
V DS=800V
RG=5Ω
T J=125°C
L=100µH
2.5
2
Eon
Switching Energy (mJ)
Eoff
1.5
1
0.5
0
VDS=800V
ID=17A
TJ=125°C
L=100µH
3
Eoff
2
Eon
1
0
5
10
15
20
25
30
35
0
5
10
I D, Drain Current (A)
15
20
25
30
35
Gate Resistance (Ohms)
Operating Frequency vs Drain Current
Source to Drain Diode Forward Voltage
1000
IDR, Reverse Drain Current (A)
225
200
175
150
ZCS
ZVS
125
100
VDS=800V
D=50%
RG=5Ω
T J=125°C
T C=75°C
75
50
25
Hard
switching
0
4
6
8
10
12
14
ID, Drain Current (A)
16
100
TJ=150°C
TJ=25°C
10
1
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
VSD, Source to Drain Voltage (V)
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
APT website – http://www.advancedpower.com
6–6
APTM120TDU57P– Rev 0 September, 2004
Switching Energy (mJ)
30
Switching Energy vs Gate Resistance
Switching Energy vs Current
3
Frequency (kHz)
15
20
25
I D, Drain Current (A)
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