PHILIPS BZD142-68 Zenblocktm; zener with integrated blocking diode Datasheet

DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D119
BZD142
ZenBlockTM; zener with integrated
blocking diode
Preliminary specification
2000 Dec 19
Philips Semiconductors
Preliminary specification
ZenBlockTM; zener with integrated blocking diode
BZD142
FEATURES
• Zener and blocking function in one package
• Glass passivated
• Low leakage current
• Excellent stability
• Available in ammo-pack.
MGU216
DESCRIPTION
Cavity free cylindrical glass package through ImplotecTM(1)
technology. This package is hermetically sealed and
fatigue free as coefficients of expansion of all used parts
are matched.
Fig.1 Simplified outline (SOD81) and symbol.
(1) Implotec is a trademark of Philips.
LIMITING VALUES
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−65
+150
°C
−
2.1
W
−
600
V
−
10
mJ
Zener
Ptot
total power dissipation
Ttp = 25 °C; lead length 10 mm;
see Fig.5
Blocking diode
VR
continuous reverse voltage
ERSM
non-repetitive peak reverse
avalanche energy
2000 Dec 19
L = 120 mH; Tj = Tj(max) prior to
surge; inductive load switched off
2
Philips Semiconductors
Preliminary specification
ZenBlockTM; zener with integrated blocking diode
BZD142
ELECTRICAL CHARACTERISTICS ZENER/TVS
Tj = 25 °C unless otherwise specified.
WORKING VOLTAGE
TEMPERATURE
COEFFICIENT
VZ (V) at IZ (see Fig.4)
SZ (%/K) at Itest
MIN.
NOM.
MAX.
MIN.
MAX.
68
61
68
75
0.07
0.12
75
68
75
82
0.07
82
74
82
90
91
82
91
100
90
100
110
99
120
130
TYPE
NUMBER
SUFFIX(1)
TEST
CURRENT
CLAMPING
VOLTAGE
V(CL)R
(V)
REVERSE CURRENT
at STAND-OFF
VOLTAGE
IR (µA)
MAX.
at IRSM
(A)
(note 2)
10
94.4
106
5
56
0.12
10
103.5
0.97
5
62
0.07
0.12
10
114
0.88
5
68
100
0.07
0.12
5
126
0.79
5
75
110
0.07
0.12
5
139
0.72
5
82
110
121
0.07
0.12
5
152
0.66
5
91
108
120
132
0.07
0.12
5
167
0.60
5
100
117
130
143
0.07
0.12
5
185
0.54
5
110
150
135
150
165
0.07
0.12
5
204
0.49
5
120
160
149
160
171
0.07
0.12
5
224
0.45
5
130
Itest (mA)
at VR (V)
MAX.
Notes
1. To complete the type number the suffix is added to the basic type number, e.g. BZD142-68.
2. Non-repetitive peak reverse current in accordance with “IEC 60060-1, Section 8” (10/1000 µs pulse); see Fig.5.
ELECTRICAL CHARACTERISTICS BLOCKING CODE
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V(BR)R
reverse avalanche
breakdown voltage
IR = 0.1 mA
700
−
−
V
IR
reverse current
VR = 600 V
−
−
5
µA
VR = 600 V; Tj = 150 °C
−
−
100
µA
f = 1 MHz; VR = 0 V;
see Fig.4
−
15
−
pF
Cd
diode capacitance
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-tp
thermal resistance from junction to tie-point
lead length = 10 mm
60
K/W
Rth j-a
thermal resistance from junction to ambient
note 1
120
K/W
Note
1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ≥40 µm, see Fig.2.
For more information please refer to the “General Part of associated Handbook”.
2000 Dec 19
3
Philips Semiconductors
Preliminary specification
ZenBlockTM; zener with integrated blocking diode
BZD142
GRAPHICAL DATA
MGU214
3
MBL107
102
handbook, halfpage
handbook, halfpage
Ptot
(W)
Cd
(pF)
2
10
1
0
1
0
100
200
T (°C)
1
10
Solid line: tie-point temperature; lead length = 10 mm.
Dotted line: ambient temperature; printed-circuit board mounted as
shown in Fig.4.
f = 1 MHz; Tj = 25 °C.
Fig.2
Fig.3
Maximum total power dissipation as a
function of temperature.
VR (V)
103
Diode capacitance as a function of reverse
voltage; typical values.
IRSMhalfpage
handbook,
50
handbook, halfpage
102
(%)
25
100
90
7
50
50
2
10
3
t
t1
MGA200
t2
MGD521
In accordance with “IEC 60060-1, Section 8”.
t1 = 10 µs.
t2 = 1000 µs.
Dimensions in mm.
Fig.5
Fig.4 Device mounted on a printed-circuit board.
2000 Dec 19
4
Non-repetitive peak reverse current pulse
definition.
Philips Semiconductors
Preliminary specification
ZenBlockTM; zener with integrated blocking diode
BZD142
PACKAGE OUTLINE
Hermetically sealed glass package;
ImplotecTM(1) technology; axial leaded; 2 leads
SOD81
G1
(2)
k
a
b
D
L
G
L
DIMENSIONS (mm are the original dimensions)
UNIT
mm
b
max.
0.81
D
max.
2.15
G
max.
G1
max.
3.8
5
L
min.
0
1
2 mm
scale
28
Notes
1. Implotec is a trademark of Philips.
2. The marking band indicates the cathode.
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
EIAJ
ISSUE DATE
97-06-20
SOD81
2000 Dec 19
EUROPEAN
PROJECTION
5
Philips Semiconductors
Preliminary specification
ZenBlockTM; zener with integrated blocking diode
BZD142
DATA SHEET STATUS
DATA SHEET STATUS
PRODUCT
STATUS
DEFINITIONS (1)
Objective specification
Development
This data sheet contains the design target or goal specifications for
product development. Specification may change in any manner without
notice.
Preliminary specification
Qualification
This data sheet contains preliminary data, and supplementary data will be
published at a later date. Philips Semiconductors reserves the right to
make changes at any time without notice in order to improve design and
supply the best possible product.
Product specification
Production
This data sheet contains final specifications. Philips Semiconductors
reserves the right to make changes at any time without notice in order to
improve design and supply the best possible product.
Note
1. Please consult the most recently issued data sheet before initiating or completing a design.
DEFINITIONS
DISCLAIMERS
Short-form specification  The data in a short-form
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
Life support applications  These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition  Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Right to make changes  Philips Semiconductors
reserves the right to make changes, without notice, in the
products, including circuits, standard cells, and/or
software, described or contained herein in order to
improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
the use of any of these products, conveys no licence or title
under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that
these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified.
Application information  Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
2000 Dec 19
6
Philips Semiconductors
Preliminary specification
ZenBlockTM; zener with integrated blocking diode
NOTES
2000 Dec 19
7
BZD142
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SCA 70
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613510/01/pp8
Date of release: 2000
Dec 19
Document order number:
9397 750 07492
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