UTC BC337G-XX-T92-B Switching and amplifier application Datasheet

UNISONIC TECHNOLOGIES CO., LTD
BC337/BC338
NPN SILICON TRANSISTOR
SWITCHING AND AMPLIFIER
APPLICATIONS

FEATURES
* Suitable for AF-Driver stages and low power output stages
* Complement to UTC BC327/328
1
TO-92

ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
BC337L-xx-T92-B
BC337G-xx-T92-B
BC337L-xx-T92-K
BC337G-xx-T92-K
BC338L-xx-T92-B
BC338G-xx-T92-B
BC338L-xx-T92-K
BC338G-xx-T92-K
Note: Pin Assignment: C: Collector B: Base
E: Emitter

Package
TO-92
TO-92
TO-92
TO-92
Pin Assignment
1
2
3
C
B
E
C
B
E
C
B
E
C
B
E
Packing
Tape Box
Bulk
Tape Box
Bulk
MARKING
BC337
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., LTD
BC338
1 of 3
QW-R201-039.E
BC337/BC338

NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
50
V
Collector-Emitter Voltage
VCES
30
V
45
V
Collector-Emitter Voltage
VCEO
25
V
Emitter-Base Voltage
VEBO
5
V
Collector Current (DC)
IC
800
mA
625
mW
Collector Dissipation
PC
Derate Above 25°C
5
mW/°C
Junction Temperature
TJ
125
°C
Operating Temperature
TOPR
-20 ~ +85
°C
Storage Temperature
TSTG
-40 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
BC337
BC338
BC337
BC338

THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case

SYMBOL
θJA
θJc
UNIT
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
BC337
Collector-Emitter Breakdown Voltage
BC338
BC337
Collector-Emitter Breakdown Voltage
BC338
Emitter-Base Breakdown Voltage
BC337
Collector Cut-off Current
BC338
Collector-Emitter Saturation Voltage
Base-Emitter on Voltage
Output Capacitance
Current Gain Bandwidth Product
TEST CONDITIONS
BVCEO
IC=10mA, IB=0
BVCES
IC=0.1mA, VBE=0
BVEBO
IE=0.1mA, IC=0
VCE=45V, IB=0
VCE=25V, IB=0
VCE=1V, IC=100mA
VCE=1V, IC=300mA
IC=500mA, IB=50mA
VCE=1V, IC=300mA
VCB=10V, IE=0, f=1MHz
VCE=5V, IC=10mA, f=50MHz
ICES
hFE1
hFE2
DC Current Gain

RATINGS
200
83.3
VCE(SAT)
VBE(ON)
Cob
fT
MIN
45
25
50
30
5
TYP
2
2
100
60
MAX UNIT
V
V
V
V
V
100
nA
100
nA
630
0.7
1.2
12
100
V
V
pF
MHz
CLASSIFICATION OF hFE1
RANK
hFE1
16
100-250
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
25
160-400
40
250-630
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QW-R201-039.E
BC337/BC338
NPN SILICON TRANSISTOR
TYPICAL CHARACTERISTICS
=1
00
℃
300
100
TA
30
=-2
5℃
1K
=2
5℃
Common Emitter
VCE=1V
TA
Collector Current, IC (mA)
5K
Collector Power Dissipation, PC (mW)
Collector Current vs.
Base-Emitter Voltage
TA

10
3
1
0.2
0.7
0.8
0.6
0.4
Base-Emitter Voltage, VBE (V)
0.4
0.3
0.2
700
600
500
400
300
200
100
0
0
25 50
75 100 125 150 175
Ambient Temperature, TA (℃)
Collector Current vs.
Collector-Emitter Voltage
IB=10mA
0.6
0.5
1.0
Collector Power Dissipation vs.
Ambient Temperature
IB=9mA
IB=8mA
IB=7mA
IB=6mA
IB=5mA
IB=4mA
IB=3mA
IB=2mA
IB=1mA
0.1
0
0 1 2 3 4 5 6 7 8 9 10
Collector-Emitter Voltage, VCE (V)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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