FDC5612 60V N-Channel PowerTrenchTM MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. • 4.3 A, 60 V. RDS(ON) = 0.055 W These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. @ VGS = 10 V RDS(ON) = 0.064 W @ VGS = 6 V. • Low gate charge (12.5nC typical). • Fast switching speed. • High performance trench technology for extremely low RDS(ON). • SuperSOTTM-6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick). S D 1 6 2 5 3 4 D G D SuperSOTTM -6 D Absolute Maximum Ratings Symbol TA = 25°C unless otherwise noted Parameter Ratings Units VDSS Drain-Source Voltage 60 V VGSS Gate-Source Voltage ±20 V ID Drain Current - Continuous 4.3 A Drain Current - Pulsed PD Power Dissipation for Single Operation TJ, Tstg (Note 1a) 20 (Note 1a) 1.6 (Note 1b) 0.8 Operating and Storage Junction Temperature Range W -55 to +150 °C °C/W °C/W Thermal Characteristics RθJA RθJC Thermal Resistance, Junction-to-Ambient (Note 1a) 78 Thermal Resistance, Junction-to-Case (Note 1) 30 Package Outlines and Ordering Information Device Marking Device Reel Size Tape Width Quantity .612 FDC5612 7’’ 8mm 3000 units ã 1999 Fairchild Semiconductor Corporation FDC5612 Rev. C FDC5612 May 1999 Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units Off Characteristics VGS = 0 V, ID = 250 µA ID = 250 µA, Referenced to 25°C BVDSS Drain-Source Breakdown Voltage ∆BVDSS ∆TJ IDSS Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current VDS = 48 V, VGS = 0 V IGSSF Gate-Body Leakage Current, Forward VGS = 20 V, VDS = 0 V 100 µA nA IGSSR Gate-Body Leakage Current, Reverse VGS = -20 V, VDS = 0 V -100 nA 4 V On Characteristics 60 V 1 (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA ∆VGS(th) Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance ID = 250 µA, Referenced to 25°C -5.5 0.042 0.072 0.048 ∆TJ RDS(on) mV/°C 58 2 2.2 mV/°C 0.055 0.094 0.064 Ω ID(on) On-State Drain Current VGS = 10 V, ID = 4.3 A VGS = 10 V, ID = 4.3 A, TJ = 125°C VGS = 6 V, ID = 4 A VGS = 10 V, VDS = 5 V gFS Forward Transconductance VDS = 10 V, ID = 4.3 A 14 VDS = 25 V, VGS = 0 V, f = 1.0 MHz 650 pF 80 pF 35 pF 10 A S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) (Note 2) VDD = 30 V, ID = 1 A, VGS = 10 V, RGEN = 6 Ω 11 20 8 18 ns Turn-Off Delay Time 19 35 ns tf Turn-Off Fall Time 6 15 ns Qg Total Gate Charge 12.5 18 nC Qgs Gate-Source Charge Qgd Gate-Drain Charge VDS = 30 V, ID = 4.3 A, VGS = 10 V ns 2.4 nC 2.6 nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 1.3 A (Note 2) 0.75 1.3 A 1.2 V Notes: 1. RqJA is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RqJC is guaranteed by design while RqCA is determined by the user's board design. a) 78°C/W when mounted on a 1.0 in2 pad of 2 oz. copper. b) 156°C/W when mounted on a minimum pad. 2. Pulse Test: Pulse Width £ 300 ms, Duty Cycle £ 2.0% FDC5612 Rev. C FDC5612 Electrical Characteristics FDC5612 Typical Characteristics 1 .8 VGS = 10V 4.5V R DS(O N), N OR M A LIZ ED 6.0V 16 5.0V 4.0V 12 8 3.5V 4 0 D R AIN -SO U RC E O N -R ES ISTA N C ID, DRAIN-SOURCE CURRENT (A) 20 1 .6 V G S = 4 .0 V 1 .4 4 .5 V 5 .0 V 1 .2 6 .0 V 8 .0 V 0 .8 0 1 2 3 4 0 4 Figure 1. On-Region Characteristics. 12 16 20 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.14 2 ID = 2.2A ID = 4.3A VGS = 10V 1.8 RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 8 I D , D RA IN C U RR EN T (A ) VDS, DRAIN-SOURCE VOLTAGE (V) 1.6 1.4 1.2 1 0.8 0.6 0.4 0.12 0.1 o TA = 125 C 0.08 0.06 0.04 o TA = 25 C 0.02 0 -50 -25 0 25 50 75 100 125 150 2 4 o TJ, JUNCTION TEMPERATURE ( C) 6 8 10 VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 20 TA = -55 C o IS, REVERSE DRAIN CURRENT (A) o VDS = 5V ID, DRAIN CURRENT (A) 1 0V 1 25 C o 16 125 C 12 8 4 VGS = 0V 10 o TA = 125 C 1 o 25 C 0.1 o -55 C 0.01 0.001 0.0001 0 1 2 3 4 5 VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 6 0 0.2 0.4 0.6 0.8 1 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDC5612 Rev. C (continued) 10 900 I D = 4.3A V D S = 10 V f = 1MHz VGS = 0 V 800 8 20 V 700 C A PA C IT AN C E (p F ) 30 V 6 4 CISS 600 500 400 300 200 2 COSS 100 CRSS 0 0 0 2 4 6 8 10 12 0 14 10 20 30 40 50 60 V DS, DR A IN T O SO U RC E V O L T A G E (V ) Q g , GATE CHARG E (n C) Figure 7. Gate-Charge Characteristics. Figure 8. Capacitance Characteristics. 5 1 00 SINGLE PULSE o RθJA = 156 C/W 1 00 µs R DS(ON) L IM IT 10 4 o TA = 25 C POWER (W) 1m s 1 0m s 1 1 00 m s V GS= 1 0V S IN G L E P U L S E 0 .1 3 2 1s DC o R θJA= 1 56 C /W 1 o T A= 2 5 C 0 0 .01 0 .1 1 10 1 00 0.1 1 10 100 1000 SINGLE PULSE TIME (SEC) V D S , DR AIN-SO UR CE VO LTAG E (V) Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. r(t), NORMALIZED EFFECTIVE 1 TRANSIENT THERMAL RESISTANCE V G S , GATE -S OURCE VO LTAGE (V) FDC5612 Typical Characteristics 0.5 D = 0.5 0.2 0.1 0.05 R θJA (t) = r(t) * R θJA R θJA = 156°C/W 0.2 0.1 P(pk) 0.05 t1 0.02 0.02 0.01 t2 TJ - TA = P * R θJA (t) 0.01 Duty Cycle, D = t 1 / t 2 Single Pulse 0.005 0.00001 0.0001 0.001 0.01 0.1 t1 , TIME (sec) 1 10 100 300 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient themal response will change depending on the circuit board design. FDC5612 Rev. C SuperSOTTM-6 Tape and Reel Data and Package Dimensions SSOT-6 Packaging Configuration: Figur e 1.0 Packaging Description: Customize Label SSOT-6 parts are shipped in tape. The carrier tape is made from a dissipative (carbon filled) polycarbonate resin. The cover tape is a multilayer film (Heat Activated Adhesive in nature) primarily composed of polyester film, adhesive layer, sealant, and anti-static sprayed agent. These reeled parts in standard option are shipped with 3,000 units per 7" or 177cm diameter reel. The reels are dark blue in color and is made of polystyrene plastic (antistatic coated). Other option comes in 10,000 units per 13" or 330cm diameter reel. This and some other options are described in the Packaging Information table. Anti static Cover Tape These full reels are individually barcode labeled and placed inside a pizza box (illustrated in figure 1.0) made of recyclable corrugated brown paper with a Fairchild logo printing. One pizza box contains three reels maximum. And these pizza boxes are placed inside a barcode labeled shipping box which comes in different sizes depending on the number of parts shipped. F63TNR Label Embossed Carrier Tape 631 631 631 631 631 SSOT-6 Packaging Information Packaging Option Standard (no f l ow c ode ) Pin 1 D87Z SSOT-6 Unit Orientation Packaging type TNR TNR Qty per Reel/Tube/Bag 3,000 10,000 Reel Size 7" Dia 13" 184x187x47 343x343x64 Max qty per Box 9,000 30,000 Weight per unit (gm) 0.0158 0.0158 Weight per Reel (kg) 0.1440 0.4700 Box Dimension (mm) 343mm x 342mm x 64mm Intermediate box fo r D87Z Option F63TNR Label Note/Comments F63TNR Label F63TNR Label sa mpl e 184mm x 187mm x 47mm Pizza Box fo r Standar d Opti on F63TNR Label LOT: CBVK741B019 QTY: 3000 FSID: FDC633N SPEC: D/C1: D9842 D/C2: SSOT-6 Tape Leader and Trailer Configuration: Figur e 2.0 QTY1: QTY2: SPEC REV: CPN: N/F: F (F63TNR)3 Carrier Tape Cover Tape 1998 Fairchild Semiconductor Corporation Comp onent s Traile r Tape 300mm mi nimum or 75 empty poc kets Lead er Tape 500mm mi nimum or 125 emp ty poc kets August 1999, Rev. C SuperSOTTM-6 Tape and Reel Data and Package Dimensions, continued SSOT-6 Embossed Carrier Tape Configuration: Figure 3.0 P0 D0 T E1 F K0 Wc W E2 B0 Tc A0 D1 P1 User Direction of Feed Dimensions are in millimeter Pkg type A0 B0 SSOT-6 (8mm) 3.23 +/-0.10 3.18 +/-0.10 W 8.0 +/-0.3 D0 D1 E1 E2 1.55 +/-0.05 1.125 +/-0.125 1.75 +/-0.10 F 6.25 min 3.50 +/-0.05 P1 P0 4.0 +/-0.1 4.0 +/-0.1 K0 T 1.37 +/-0.10 0.255 +/-0.150 Notes: A0, B0, and K0 dimensions are determined with respect to the EIA/Jedec RS-481 rotational and lateral movement requirements (see sketches A, B, and C). Wc 0.06 +/-0.02 0.5mm maximum 20 deg maximum Typical component cavity center line B0 5.2 +/-0.3 Tc 0.5mm maximum 20 deg maximum component rotation Typical component center line Sketch A (Side or Front Sectional View) A0 Component Rotation Sketch C (Top View) Component lateral movement Sketch B (Top View) SSOT-6 Reel Configuration: Figure 4.0 Component Rotation W1 Measured at Hub Dim A Max Dim A max See detail AA Dim N 7" Diameter Option B Min Dim C See detail AA W3 13" Diameter Option Dim D min W2 max Measured at Hub DETAIL AA Dimensions are in inches and millimeters Tape Size Reel Option Dim A Dim B 0.059 1.5 512 +0.020/-0.008 13 +0.5/-0.2 0.795 20.2 2.165 55 0.331 +0.059/-0.000 8.4 +1.5/0 0.567 14.4 0.311 – 0.429 7.9 – 10.9 0.059 1.5 512 +0.020/-0.008 13 +0.5/-0.2 0.795 20.2 4.00 100 0.331 +0.059/-0.000 8.4 +1.5/0 0.567 14.4 0.311 – 0.429 7.9 – 10.9 8mm 7" Dia 7.00 177.8 8mm 13" Dia 13.00 330 Dim C Dim D Dim N Dim W1 Dim W2 Dim W3 (LSL-USL) July 1999, Rev. C SuperSOTTM-6 Tape and Reel Data and Package Dimensions, continued SuperSOT -6 (FS PKG Code 31, 33) 1:1 Scale 1:1 on letter size paper Dimensions shown below are in: inches [millimeters] Part Weight per unit (gram): 0.0158 1998 Fairchild Semiconductor Corporation September 1998, Rev. A TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ISOPLANAR™ MICROWIRE™ POP™ PowerTrench QFET™ QS™ Quiet Series™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 ACEx™ CoolFET™ CROSSVOLT™ E2CMOSTM FACT™ FACT Quiet Series™ FAST® FASTr™ GTO™ HiSeC™ SyncFET™ TinyLogic™ UHC™ VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. D