Preliminary Datasheet BCR16FM-12LB R07DS1188EJ0100 Rev.1.00 Mar 26, 2014 600V - 16A - Triac Medium Power Use Features • • • • • Insulated Type • Planar Passivation Type • Viso:2000V IT (RMS) : 16A VDRM : 600 V Tj: 150 °C IFGTI, IRGTI, IRGT III: 30 mA(20mA) Note5 Outline RENESAS Package code: PRSS0003AG-A (Package name: TO-220FP) 2 1. T1 Terminal 2. T2 Terminal 3. Gate Terminal 3 1 1 2 3 Applications Switching mode power supply, washing machine, motor control, heater control, and other general purpose control applications. Maximum Ratings Parameter Voltage class 12 600 720 Symbol Repetitive peak off-state voltageNote1 Non-repetitive peak off-state voltageNote1 VDRM VDSM Parameter RMS on-state current Symbol IT (RMS) Ratings 16 Unit A Surge on-state current ITSM 160 A I2t 106.5 A2 s PGM PG (AV) VGM IGM Tj Tstg — Viso 5 0.5 10 2 –40 to +150 –40 to +150 1.9 2000 W W V A °C °C g V I2t for fusion Peak gate power dissipation Average gate power dissipation Peak gate voltage Peak gate current Junction Temperature Storage temperature Mass Isolation voltage Note6 R07DS1188EJ0100 Rev.1.00 Mar 26, 2014 Unit V V Conditions Commercial frequency, sine full wave 360°conduction, Tc = 98°C 60Hz sinewave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current Typical value Ta=25°C, AC 1 minute T1 • T2 • G terminal to case Page 1 of 7 BCR16FM-12LB Preliminary Electrical Characteristics Parameter Symbol Repetitive peak off-state current On-state voltage IDRM VTM Min. — — Rated value Typ. Max. — 2.0 — 1.5 Unit Test conditions mA V Tj = 150°C, VDRM applied Tc = 25°C, ITM = 25A, instantaneous measurement Gate trigger voltageNote2 Ι ΙΙ ΙΙΙ VFGTΙ VRGTΙ VRGTΙΙΙ — — — — — — 1.5 1.5 1.5 V V V Tj = 25°C, VD = 6 V, RL = 6 Ω, RG = 330 Ω Gate trigger curentNote2 Ι ΙΙ ΙΙΙ IFGTΙ IRGTΙ IRGTΙΙΙ — — — — — — 30 Note5 30 Note5 30 Note5 mA mA mA Tj = 25°C, VD = 6 V, RL = 6 Ω, RG = 330 Ω VGD 0.2 0.1 — — — — — — 2.9 V 10 1 — — — — Gate non-trigger voltage Thermal resistance Rth (j-c) Critical-rate of rise of off-state Note4 commutation voltage Notes: 1. 2. 3. 4. 5. 6. (dv/dt)c °C/W V/μs Tj = 125°C, VD = 1/2 VDRM Tj = 150°C, VD = 1/2 VDRM Junction to caseNote3 Tj = 125°C Tj = 150°C Gate open. Measurement using the gate trigger characteristics measurement circuit. The contact themal resistance Rth (c-f) in case of greasing is 0.5°C /W. Test conditions of the critical-rate of rise of off-state commutation voltage is shown in the table below. High sensitivity (IGT ≤ 20mA) is also available.(IGT item:1) Make sure that your finished product containing this device meets your safe isolation requirements. For safety, it's advisable that heatsink is electrically floating. Test conditions 1. Junction temperature Tj = 125/150°C 2. Rate of decay of on-state commutating current (di/dt)c = –8.0A/ms 3. Peak off-state voltage VD = 400 V R07DS1188EJ0100 Rev.1.00 Mar 26, 2014 Commutating voltage and current waveforms (inductive load) Supply Voltage Time Main Current (di/dt)c Time Main Voltage (dv/dt)c Time VD Page 2 of 7 BCR16FM-12LB Preliminary Performance Curves 103 7 5 3 2 102 7 5 3 2 Tj = 150°C 101 7 5 3 2 Tj = 25°C 1.0 1.5 2.0 2.5 3.0 3.5 180 160 140 120 100 80 60 40 20 0 100 4.0 2 3 4 5 7 101 2 3 4 5 7 102 On-State Voltage (V) Conduction Time (Cycles at 60Hz) Gate Characteristics (I, II and III) Gate Trigger Current vs. Junction Temperature 3 2 VGM = 10V PG(AV) = 0.5W PGM = 5W 101 7 5 IGM = 2A 3 VGT = 1.5V 2 100 7 5 3 2 IFGT I, IRGT I, IRGT III VGD = 0.2V 10–1 7 5 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 Gate Trigger Current (Tj = t°C) × 100 (%) Gate Trigger Current (Tj = 25°C) Gate Voltage (V) Surge On-State Current (A) 200 100 0.5 Gate Trigger Voltage (Tj = t°C) × 100 (%) Gate Trigger Voltage (Tj = 25°C) Rated Surge On-State Current 103 7 5 4 3 2 102 7 5 4 3 2 Typical Example IRGT III IFGT I, IRGT I 101 –60 –40 –20 0 20 40 60 80 100 120 140 Gate Current (mA) Junction Temperature (°C) Gate Trigger Voltage vs. Junction Temperature Maximum Transient Thermal Impedance Characteristics (Junction to case) 103 7 5 4 3 2 Typical Example 102 7 5 4 3 2 101 –60 –40 –20 0 20 40 60 80 100 120 140 Junction Temperature (°C) R07DS1188EJ0100 Rev.1.00 Mar 26, 2014 Transient Thermal Impedance (°C/W) On-State Current (A) Maximum On-State Characteristics 102 2 3 5 7 103 2 3 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 Conduction Time (Cycles at 60Hz) Page 3 of 7 BCR16FM-12LB Preliminary 40 No Fins 2 3 4 10 2 3 5 710 2 3 5 710 2 3 5 710 2 3 5 710 On-State Power Dissipation (W) 10 7 5 3 2 2 10 7 5 3 2 1 10 7 5 3 2 0 10 7 5 3 2 –1 10 1 35 30 360° Conduction Resistive, 25 inductive loads 20 15 10 5 0 5 2 4 6 8 10 12 14 16 18 20 RMS On-State Current (A) Allowable Case Temperature vs. RMS On-State Current Allowable Ambient Temperature vs. RMS On-State Current 160 140 140 120 100 Curves apply regardless of conduction angle 80 60 40 360° Conduction 20 Resistive, inductive loads 0 0 2 4 6 8 10 12 14 16 18 20 Ambient Temperature (°C) 160 120 100 80 All fins are black painted aluminum and greased 120 × 120 × t2.3 100 × 100 × t2.3 60 × 60 × t2.3 60 Curves apply regardless of 40 conduction angle Resistive, 20 inductive loads Natural convection 0 0 2 4 6 8 10 12 14 16 18 20 RMS On-State Current (A) RMS On-State Current (A) Allowable Ambient Temperature vs. RMS On-State Current Repetitive Peak Off-State Current vs. Junction Temperature Natural convection No Fins Curves apply regardless of conduction angle Resistive, inductive loads 140 120 100 80 60 40 20 0 0 Conduction Time (Cycles at 60Hz) 160 Ambient Temperature (°C) Maximum On-State Power Dissipation 3 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 RMS On-State Current (A) R07DS1188EJ0100 Rev.1.00 Mar 26, 2014 Repetitive Peak Off-State Current (Tj = t°C) × 100 (%) Repetitive Peak Off-State Current (Tj = 25°C) Case Temperature (°C) Transient Thermal Impedance (°C/W) Maximum Transient Thermal Impedance Characteristics (Junction to ambient) 5 3 Typical Example 2 105 7 5 3 2 104 7 5 3 2 103 7 5 3 2 102 –60 –40 –20 0 20 40 60 80 100 120 140160 Junction Temperature (°C) Page 4 of 7 BCR16FM-12LB Preliminary 103 7 5 4 3 2 Latching Current vs. Junction Temperature Latching Current (mA) Typical Example 102 7 5 4 3 2 101 –60 –40 –20 0 20 40 60 80 100 120 140 160 103 7 5 3 2 Distribution T2+, G– Typical Example 102 7 5 3 2 101 7 5 3 2 T2+, G+ Typical Example T2–, G– 100 –40 0 40 80 120 160 Junction Temperature (°C) Breakover Voltage vs. Junction Temperature Breakover Voltage vs. Rate of Rise of Off-State Voltage (Tj=125°C) 160 Typical Example 140 120 100 80 60 40 20 0 –60 –40 –20 0 20 40 60 80 100 120 140 160 Breakover Voltage (dv/dt = xV/μs) × 100 (%) Breakover Voltage (dv/dt = 1V/μs) Junction Temperature (°C) 160 Typical Example Tj = 125°C 140 120 100 III Quadrant 80 60 40 I Quadrant 20 0 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 Junction Temperature (°C) Rate of Rise of Off-State Voltage (V/μs) Breakover Voltage vs. Rate of Rise of Off-State Voltage (Tj=150°C) Commutation Characteristics (Tj=125°C) 160 Typical Example Tj = 150°C 140 120 100 III Quadrant 80 60 40 I Quadrant 20 0 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 Rate of Rise of Off-State Voltage (V/μs) R07DS1188EJ0100 Rev.1.00 Mar 26, 2014 Critical Rate of Rise of Off-State Commutating Voltage (V/μs) Breakover Voltage (dv/dt = xV/μs) × 100 (%) Breakover Voltage (dv/dt = 1V/μs) Breakover Voltage (Tj = t°C) × 100 (%) Breakover Voltage (Tj = 25°C) Holding Current (Tj = t°C) × 100 (%) Holding Current (Tj = 25°C) Holding Current vs. Junction Temperature 102 7 5 3 2 Time Main Voltage (dv/dt)c VD Main Current (di/dt)c IT τ Time 101 7 5 Minimum Characteristics Value Typical Example Tj = 125°C IT = 4A τ = 500μs VD = 200V f = 3Hz III Quadrant 3 2 I Quadrant 100 7 3 5 7 101 2 3 5 7 102 2 3 Rate of Decay of On-State Commutating Current (A/ms) Page 5 of 7 BCR16FM-12LB Preliminary Gate Trigger Current vs. Gate Current Pulse Width 102 7 5 3 2 Time Main Voltage (dv/dt)c VD Main Current (di/dt)c IT τ Time 101 7 5 Gate Trigger Current (tw) × 100 (%) Gate Trigger Current (DC) Critical Rate of Rise of Off-State Commutating Voltage (V/μs) Commutation Characteristics (Tj=150°C) Typical Example Tj = 150°C IT = 4A τ = 500μs VD = 200V f = 3Hz I Quadrant III Quadrant 3 2 100 7 Minimum Characteristics Value 3 5 7 101 2 3 5 7 102 2 3 103 7 5 4 3 2 Typical Example IFGT I IRGT I IRGT III 102 7 5 4 3 2 101 0 10 2 3 4 5 7 101 2 3 4 5 7 102 Rate of Decay of On-State Commutating Current (A/ms) Gate Current Pulse Width (μs) Gate Trigger Characteristics Test Circuits Recommended Circuit Values Around The Triac 6Ω 6Ω Load C1 A 6V 330Ω V Test Procedure I R1 A 6V V Test Procedure II 330Ω C0 R0 C1 = 0.1 to 0.47μF C0 = 0.1μF R0 = 100Ω R1 = 47 to 100Ω 6Ω A 6V V 330Ω Test Procedure III R07DS1188EJ0100 Rev.1.00 Mar 26, 2014 Page 6 of 7 BCR16FM-12LB Preliminary Package Dimensions Package Name TO-220FP JEITA Package Code RENESAS Code PRSS0003AG-A Previous Code MASS[Typ.] 1.9g Unit: mm 10.16 ± 0.20 2.54 ± 0.20 6.68 ± 0.20 3.3 ± 0.2 1.28 ± 0.30 3.18 ± 0.20 12.98 ± 0.30 15.87 ± 0.20 3.18 ± 0.10 Max 1.47 2.76 ± 0.20 0.80 ± 0.20 0.50 4.7 ± 0.2 5.08 ± 0.20 Ordering Information Orderable Part Number Packing Quantity BCR16FM-12LB#BB0 Tube 50 pcs. BCR16FM-12LB-1#BB0 Tube 50 pcs. BCR16FM-12LB#BB0 Tube 50 pcs. BCR16FM12LB1#BB0 Tube 50 pcs. Note : Please confirm the specification about the shipping in detail. R07DS1188EJ0100 Rev.1.00 Mar 26, 2014 Remark Straight type Straight type, IGT item:1 :Lead forming type : Lead forming type, IGT item:1 Page 7 of 7 Notice 1. Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. Renesas Electronics assumes no responsibility for any losses incurred by you or third parties arising from the use of these circuits, software, or information. 2. Renesas Electronics has used reasonable care in preparing the information included in this document, but Renesas Electronics does not warrant that such information is error free. Renesas Electronics 3. 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