APTGF200U60D4 Single switch NPT IGBT Power Module Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control 1 3 5 2 2 1 Features • Non Punch Through (NPT) fast IGBT - Low voltage drop - Low tail current - Switching frequency up to 50 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated • Kelvin emitter for easy drive • Low stray inductance - M6 connectors for power - M4 connectors for signal • High level of integration Benefits • Outstanding performance at high frequency operation • Stable temperature behavior • Very rugged • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Easy paralleling due to positive TC of VCEsat Absolute maximum ratings Symbol VCES Parameter Collector - Emitter Breakdown Voltage IC Continuous Collector Current ICM VGE PD Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation RBSOA Reverse Bias Safe Operation Area TC = 25°C Max ratings 600 250 200 400 ±20 735 Tj = 125°C 400A@420V TC = 25°C TC = 80°C TC = 25°C Unit V A June, 2005 3 V W These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website – http://www.advancedpower.com 1-5 APTGF200U60D4 – Rev 1 4 5 VCES = 600V IC = 200A @ Tc = 80°C APTGF200U60D4 All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic Zero Gate Voltage Collector Current VCE(on) Collector Emitter on Voltage VGE(th) IGES Gate Threshold Voltage Gate – Emitter Leakage Current Dynamic Characteristics Symbol Cies Cres Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff Characteristic Input Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn on Energy Turn off Energy Reverse diode ratings and characteristics Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM Maximum Reverse Leakage Current VF Diode Forward Voltage ER Reverse Recovery Energy Qrr Reverse Recovery Charge Tj = 25°C Tj = 125°C Tj = 25°C VGE = 15V IC = 200A Tj = 125°C VGE = VCE , IC = 4mA VGE = 20V, VCE = 0V Min Typ Max Unit 500 µA mA 4.5 1 1 1.95 2.2 5.5 VGE = 0V VCE = 600V Test Conditions VGE = 0V, VCE = 25V f = 1MHz Inductive Switching (25°C) VGE = ±15V VBus = 300V IC = 200A R G = 1.5Ω Inductive Switching (125°C) VGE = ±15V VBus = 300V IC = 200A R G = 1.5Ω Test Conditions VR=600V Typ 9 0.8 163 43 6.5 400 V nA Max Unit nF ns 253 33 183 49 285 41 4.6 6.3 Min 600 Typ Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 125°C 1.25 1.2 4.1 Tj = 25°C 12 Tj = 125°C 19 V ns mJ Max 250 500 1.6 Unit V µA V mJ µC June, 2005 IF = 200A VGE = 0V IF = 200A VR = 300V di/dt =4000A/µs Min 2.45 APT website – http://www.advancedpower.com 2-5 APTGF200U60D4 – Rev 1 ICES Test Conditions APTGF200U60D4 Thermal and package characteristics Symbol Characteristic Min IGBT Diode RthJC Junction to Case VISOL TJ TSTG TC RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Torque Mounting torque Wt Package Weight M6 M4 2500 -40 -40 -40 3 1 Typ Max 0.17 0.29 Unit °C/W V 150 125 125 5 2 420 °C N.m g APT website – http://www.advancedpower.com 3-5 APTGF200U60D4 – Rev 1 June, 2005 Package outline (dimensions in mm) APTGF200U60D4 Typical Performance Curve Output Characteristics (V GE=15V) Output Characteristics 400 400 350 300 300 250 T J=125°C IC (A) IC (A) TJ = 125°C 350 TJ =25°C 200 V GE=20V 200 150 150 100 100 50 50 V GE=9V 0 0 0.5 1 1.5 2 VCE (V) 2.5 3 3.5 0 VCE = 300V VGE = 15V RG = 1.5Ω TJ = 125°C 12.5 300 10 E (mJ) 250 200 150 TJ =125°C 3 V CE (V) 4 5 Eon Eoff 7.5 Er 5 100 2.5 TJ=25°C 50 2 15 T J=25°C 350 1 Energy losses vs Collector Current Transfert Characteristics 400 0 0 5 6 7 8 9 10 11 0 12 50 100 150 200 250 300 350 400 IC (A) VGE (V) Switching Energy Losses vs Gate Resistance 16 Reverse Safe Operating Area 500 VCE = 300V VGE =15V IC = 200A T J = 125°C Eon 8 400 IC (A) 12 E (mJ) VGE =12V 250 0 IC (A) VGE=15V Eoff 300 200 4 VGE =15V TJ =125°C RG=1.5Ω 100 Er 0 0 0 2 4 6 8 10 Gate Resistance (ohms) 12 0 100 200 300 400 500 600 VCE (V) maximum Effective Transient Thermal Impedance, Junction to Pulse Duration 0.14 0.12 0.1 0.08 0.06 0.9 IGBT 0.7 June, 2005 0.16 0.5 0.3 0.04 0.1 0.02 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 rectangular Pulse Duration (Seconds) APT website – http://www.advancedpower.com 1 10 4-5 APTGF200U60D4 – Rev 1 Thermal Impedance (°C/W) 0.18 APTGF200U60D4 VCE =300V D=50% RG=1.5Ω T J=125°C T C=75°C ZCS 80 ZVS 60 350 300 250 40 200 TJ=125°C 150 hard switching 20 100 TJ =25°C 50 0 0 0 50 100 150 IC (A) 200 250 300 0 0.2 0.4 0.6 0.8 1 V F (V) 1.2 1.4 1.6 maximum Effective Transient Thermal Impedance, Junction to Pulse Duration 0.3 0.9 Diode 0.25 0.7 0.2 0.1 0.05 0.5 0.3 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 rectangular Pulse Duration (Seconds) 1 10 June, 2005 0.15 APT reserves the right to change, without notice, the specifications and information contained herein APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APT website – http://www.advancedpower.com 5-5 APTGF200U60D4 – Rev 1 Thermal Impedance (°C/W) Forward Characteristic of diode 400 IC (A) Fmax, Operating Frequency (kHz) Operating Frequency vs Collector Current 100