BUZ 272 SIPMOS ® Power Transistor • P channel • Enhancement mode • Avalanche rated Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS(on) Package Ordering Code BUZ 272 -100 V -15 A 0.3 Ω TO-220 AB C67078-S1454-A2 Maximum Ratings Parameter Symbol Continuous drain current ID TC = 25 °C Values Unit A -15 IDpuls Pulsed drain current TC = 25 °C -60 EAS Avalanche energy, single pulse mJ ID = -15 A, VDD = -25 V, RGS = 25 Ω L = 1.93 mH, Tj = 25 °C 290 Gate source voltage VGS Power dissipation Ptot TC = 25 °C ± 20 V W 125 Operating temperature Tj -55 ... + 150 Storage temperature Tstg -55 ... + 150 Thermal resistance, chip case RthJC ≤1 Thermal resistance, chip to ambient RthJA ≤ 75 DIN humidity category, DIN 40 040 K/W E IEC climatic category, DIN IEC 68-1 Semiconductor Group °C 55 / 150 / 56 1 07/96 BUZ 272 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Static Characteristics Drain- source breakdown voltage V(BR)DSS VGS = 0 V, ID = -0.25 mA, Tj = 25 °C Gate threshold voltage -100 - - -2.1 -3 -4 VGS(th) VGS=VDS, ID = 1 mA Zero gate voltage drain current V IDSS µA VDS = -100 V, VGS = 0 V, Tj = 25 °C - -0.1 -1 VDS = -100 V, VGS = 0 V, Tj = 125 °C - -10 -100 Gate-source leakage current IGSS VGS = -20 V, VDS = 0 V Drain-Source on-resistance - -10 -100 Ω RDS(on) VGS = -10 V, ID = -9.5 A Semiconductor Group nA - 2 0.2 0.3 07/96 BUZ 272 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Dynamic Characteristics Transconductance gfs VDS≥ 2 * ID * RDS(on)max, ID = -9.5 A Input capacitance 1.5 pF - 2000 2700 - 360 540 - 120 180 Crss VGS = 0 V, VDS = -25 V, f = 1 MHz Turn-on delay time - Coss VGS = 0 V, VDS = -25 V, f = 1 MHz Reverse transfer capacitance 4.5 Ciss VGS = 0 V, VDS = -25 V, f = 1 MHz Output capacitance S td(on) ns VDD = -30 V, VGS = -10 V, ID = -2.9 A RGS = 50 Ω Rise time - 30 45 - 120 180 - 125 170 - 120 160 tr VDD = -30 V, VGS = -10 V, ID = -2.9 A RGS = 50 Ω Turn-off delay time td(off) VDD = -30 V, VGS = -10 V, ID = -2.9 A RGS = 50 Ω Fall time tf VDD = -30 V, VGS = -10 V, ID = -2.9 A RGS = 50 Ω Semiconductor Group 3 07/96 BUZ 272 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Reverse Diode Inverse diode continuous forward current IS TC = 25 °C Inverse diode direct current,pulsed - - -60 V -1.15 -1.7 trr ns - 90 - Qrr VR = -30 V, IF=lS, diF/dt = 100 A/µs Semiconductor Group -15 - VR = -30 V, IF=lS, diF/dt = 100 A/µs Reverse recovery charge - VSD VGS = 0 V, IF = -30 A Reverse recovery time - ISM TC = 25 °C Inverse diode forward voltage A µC - 4 0.23 - 07/96 BUZ 272 Power dissipation Ptot = ƒ(TC) Drain current ID = ƒ(TC) parameter: VGS ≥ -10 V 130 -16 W A 110 Ptot ID 100 -12 90 -10 80 70 -8 60 50 -6 40 -4 30 20 -2 10 0 0 0 20 40 60 80 100 120 °C 160 0 20 40 60 80 100 120 TC °C 160 TC Safe operating area ID = ƒ(VDS) parameter: D = 0.01, TC = 25°C Transient thermal impedance Zth JC = ƒ(tp) parameter: D = tp / T -10 2 10 1 t = 15.0µs p K/W ID ZthJC A 100 µs 10 0 /I 10 -1 DS -10 D 1 ms 1 =V D = 0.50 DS (on ) 0.20 R 0.10 10 ms 0.05 10 -2 0.02 0.01 single pulse -10 DC 0 -10 0 -10 1 V -10 10 2 10 VDS Semiconductor Group -3 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 s 10 tp 5 07/96 0 BUZ 272 Typ. output characteristics ID = ƒ(VDS) Typ. drain-source on-resistance RDS (on) = ƒ(ID) parameter: VGS parameter: tp = 80 µs -34 0.9 Ptot = 125W l VGS [V] a -4.0 -28 k -24 j -20 i -16 h -12 g f -8 b -4.5 c -5.0 d -5.5 e f g h i j e -6.0 f -6.5 g -7.0 h -7.5 i -8.0 j -9.0 k -10.0 l -20.0 0.6 0.5 0.4 0.3 0.2 k d -4 a -8 -12 -16 VGS [V] = 0.1 c -4 d RDS (on) 0.7 e 0 0 b c Ω A ID a a b c d e f -4.0 -4.5 -5.0 -5.5 -6.0 -6.5 -7.0 b -20 g h i j k -7.5 -8.0 -9.0 -10.0 -20.0 0.0 V -28 0 -4 -8 -12 -16 -20 A VDS -28 ID Typ. transfer characteristics ID = f (VGS) Typ. forward transconductance gfs = f (ID) parameter: tp = 80 µs VDS≥2 x ID x RDS(on)max parameter: tp = 80 µs, VDS≥2 x ID x RDS(on)max -16 7.0 S A ID 6.0 gfs -12 5.5 5.0 4.5 -10 4.0 -8 3.5 3.0 -6 2.5 2.0 -4 1.5 1.0 -2 0 0 0.5 0.0 -1 -2 -3 Semiconductor Group -4 -5 -6 -7 -8 V VGS -10 6 0 -2 -4 -6 -8 -10 -12 A ID 07/96 -15 BUZ 272 Drain-source on-resistance RDS (on) = ƒ(Tj ) parameter: ID = -9.5 A, VGS = -10 V Gate threshold voltage VGS (th) = ƒ(Tj) parameter: VGS = VDS, ID = 1 mA 0.9 -4.6 V Ω 98% -4.0 RDS (on) 0.7 VGS(th) -3.6 typ -3.2 0.6 -2.8 0.5 -2.4 98% 0.4 0.3 2% -2.0 -1.6 typ -1.2 0.2 -0.8 0.1 -0.4 0.0 -60 -20 20 60 100 °C 0.0 -60 160 -20 20 60 100 Tj °C 160 Tj Typ. capacitances Forward characteristics of reverse diode IF = ƒ(VSD) parameter: Tj , tp = 80 µs C = f (VDS) parameter:VGS = 0V, f = 1MHz 10 1 -10 2 nF A C IF Ciss 10 0 -10 1 Coss 10 -1 -10 0 Crss Tj = 25 °C typ Tj = 150 °C typ Tj = 25 °C (98%) Tj = 150 °C (98%) 10 -2 0 -5 -10 Semiconductor Group -15 -20 -25 -30 V VDS -40 -10 -1 0.0 -0.4 -0.8 -1.2 -1.6 -2.0 -2.4 V VSD 7 07/96 -3.0 BUZ 272 Avalanche energy EAS = ƒ(Tj ) parameter: ID = -15 A, VDD = -25 V RGS = 25 Ω, L = 1.93 mH EAS Drain-source breakdown voltage V(BR)DSS = ƒ(Tj) 300 -120 mJ V 240 V(BR)DSS -114 220 -112 200 -110 180 -108 160 -106 140 -104 120 -102 100 -100 80 -98 60 -96 40 -94 20 0 20 -92 -90 -60 40 60 80 100 120 °C 160 Tj Semiconductor Group -20 20 60 100 °C Tj 8 07/96 160 BUZ 272 Package Outlines TO-220 AB Dimension in mm Semiconductor Group 9 07/96