Am29F400B Known Good Die Data Sheet -XO\ 7KHIROORZLQJGRFXPHQWVSHFLILHV6SDQVLRQPHPRU\SURGXFWVWKDWDUHQRZRIIHUHGE\ERWK$GYDQFHG 0LFUR'HYLFHVDQG)XMLWVX$OWKRXJKWKHGRFXPHQWLVPDUNHGZLWKWKHQDPHRIWKHFRPSDQ\WKDWRULJ LQDOO\ GHYHORSHG WKHVSHFLILFDWLRQ WKHVH SURGXFWV ZLOO EHRIIHUHG WR FXVWRPHUVRIERWK $0' DQG )XMLWVX Continuity of Specifications 7KHUHLVQRFKDQJHWRWKLVGDWDVKHHWDVDUHVXOWRIRIIHULQJWKHGHYLFHDVD6SDQVLRQSURGXFW$Q\ FKDQJHVWKDWKDYHEHHQPDGHDUHWKHUHVXOWRIQRUPDOGDWDVKHHWLPSURYHPHQWDQGDUHQRWHGLQWKH GRFXPHQWUHYLVLRQVXPPDU\ZKHUHVXSSRUWHG)XWXUHURXWLQHUHYLVLRQVZLOORFFXUZKHQDSSURSULDWH DQGFKDQJHVZLOOEHQRWHGLQDUHYLVLRQVXPPDU\ Continuity of Ordering Part Numbers $0'DQG)XMLWVXFRQWLQXHWRVXSSRUWH[LVWLQJSDUWQXPEHUVEHJLQQLQJZLWK$PDQG0%07RRUGHU WKHVHSURGXFWVSOHDVHXVHRQO\WKH2UGHULQJ3DUW1XPEHUVOLVWHGLQWKLVGRFXPHQW For More Information 3OHDVH FRQWDFW \RXU ORFDO $0' RU )XMLWVX VDOHV RIILFH IRU DGGLWLRQDO LQIRUPDWLRQ DERXW 6SDQVLRQ PHPRU\VROXWLRQV 3XEOLFDWLRQ1XPEHU 5HYLVLRQ ( $PHQGPHQW ,VVXH'DWH -XQH SUPPLEMENT Am29F400B Known Good Die 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory—Die Revision 2 DISTINCTIVE CHARACTERISTICS ■ Single power supply operation — 5.0 volt-only operation for read, erase, and program operations — Minimizes system level requirements ■ Manufactured on 0.32 µm process technology — Compatible with 0.5 µm Am29F400 device ■ High performance — Access time as fast as 70 ns ■ Low power consumption (typical values at 5 MHz) — 1 µA standby mode current — 20 mA read current (byte mode) — 28 mA read current (word mode) — 30 mA program/erase current ■ Flexible sector architecture — One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and seven 64 Kbyte sectors (byte mode) — One 8 Kword, two 4 Kword, one 16 Kword, and seven 32 Kword sectors (word mode) — Supports full chip erase — Sector Protection features: A hardware method of locking a sector to prevent any program or erase operations within that sector ■ Embedded Algorithms — Embedded Erase algorithm automatically preprograms and erases the entire chip or any combination of designated sectors — Embedded Program algorithm automatically writes and verifies data at specified addresses ■ Minimum 1,000,000 write cycle per sector guaranteed ■ Compatibility with JEDEC standards — Pinout and software compatible with singlepower-supply Flash — Superior inadvertent write protection ■ Data# Polling and toggle bits — Provides a software method of detecting program or erase operation completion ■ Ready/Busy# pin (RY/BY#) — Provides a hardware method of detecting program or erase cycle completion ■ Erase Suspend/Erase Resume — Suspends an erase operation to read data from, or program data to, a sector that is not being erased, then resumes the erase operation ■ Hardware reset pin (RESET#) — Hardware method to reset the device to reading array data Sectors can be locked via programming equipment ■ 20-year data retention at 125°C Temporary Sector Unprotect feature allows code changes in previously locked sectors ■ Tested to datasheet specifications at temperature ■ Top or bottom boot block configurations available — Contact AMD for higher temperature range devices ■ Quality and reliability levels equivalent to standard packaged components Publication# 21258 Rev: E Amendment/+5 Issue Date: June 27, 2001 S U P P L E M E N T GENERAL DESCRIPTION The Am29F400B in Known Good Die (KGD) form is a 4 Mbit, 5.0 volt-only Flash memory. AMD defines KGD as standard product in die form, tested for functionality and speed. AMD KGD products have the same reliability and quality as AMD products in packaged form. Am29F400B Features The Am29F400B is a 4 Mbit, 5.0 volt-only Flash memory organized as 524,288 bytes or 262,144 words. The word-wide data (x16) appears on DQ15–DQ0; the byte-wide (x8) data appears on DQ7–DQ0. This device is designed to be programmed in-system with the standard system 5.0 volt VCC supply. A 12.0 V VPP is not required for write or erase operations. The device can also be programmed in standard EPROM programmers. This device is manufactured using AMD’s 0.32 µm process technology, and offers all the features and benefits of the Am29F400, which was manufactured using 0.5 µm process technology. To eliminate bus contention the device has separate chip enable (CE#), write enable (WE#) and output enable (OE#) controls. The device requires only a single 5.0 volt power supply for both read and write functions. Internally generated and regulated voltages are provided for the program and erase operations. The device is entirely command set compatible with the JEDEC single-power-supply Flash standard. Commands are written to the command register using standard microprocessor write timings. Register contents serve as input to an internal state-machine that controls the erase and programming circuitry. Write cycles also internally latch addresses and data needed for the programming and erase operations. Reading data out of the device is similar to reading from other Flash or EPROM devices. Device programming occurs by executing the program command sequence. This initiates the Embedded Program algorithm—an internal algorithm that automatically times the program pulse widths and verifies proper cell margin. Device erasure occurs by executing the erase command sequence. This initiates the Embedded Erase algorithm—an internal algorithm that automatically 2 preprograms the array (if it is not already programmed) before executing the erase operation. During erase, the device automatically times the erase pulse widths and verifies proper cell margin. The host system can detect whether a program or erase operation is complete by observing the RY/BY# pin, or by reading the DQ7 (Data# Polling) and DQ6 (toggle) status bits. After a program or erase cycle has been completed, the device is ready to read array data or accept another command. The sector erase architecture allows memory sectors to be erased and reprogrammed without affecting the data contents of other sectors. The device is fully erased when shipped from the factory. Hardware data protection measures include a low VCC detector that automatically inhibits write operations during power transitions. The hardware sector protection feature disables both program and erase operations in any combination of the sectors of memory. This can be achieved via programming equipment. The Erase Suspend feature enables the user to put erase on hold for any period of time to read data from, or program data to, any sector that is not selected for erasure. True background erase can thus be achieved. The hardware RESET# pin terminates any operation in progress and resets the internal state machine to reading array data. The RESET# pin may be tied to the system reset circuitry. A system reset would thus also reset the device, enabling the system microprocessor to read the boot-up firmware from the Flash memory. The system can place the device into the standby mode. Power consumption is greatly reduced in this mode. AMD’s Flash technology combines years of Flash memory manufacturing experience to produce the highest levels of quality, reliability and cost effectiveness. The device electrically erases all bits within a sector simultaneously via Fowler-Nordheim tunneling. The data is programmed using hot electron injection. Electrical Specifications Refer to the Am29F400B data sheet, document number 21505, for full electrical specifications on the Am29F400B in KGD form. Am29F400B Known Good Die S U P P L E M E N T PRODUCT SELECTOR GUIDE Family Part Number Speed Option Am29F400B KGD VCC = 5.0 V ± 5% -75 VCC = 5.0 V ± 10% -90 -120 Max access time, ns (tACC) 70 90 120 Max CE# access time, ns (tCE) 70 90 120 Max OE# access time, ns (tOE) 30 35 50 DIE PHOTOGRAPH DIE PAD LOCATIONS 9 8 7 6 5 4 3 2 1 43 42 41 40 39 38 37 36 35 10 11 34 33 12 32 AMD logo location 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 Am29F400B Known Good Die 3 S U P P L E M E N T PAD DESCRIPTION Pad Signal 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 VCC DQ4 DQ12 DQ5 DQ13 DQ6 DQ14 DQ7 DQ15/A-1 VSS BYTE# A16 A15 A14 A13 A12 A11 A10 A9 A8 WE# RESET# RY/BY# A17 A7 A6 A5 A4 A3 A2 A1 A0 CE# VSS OE# DQ0 DQ8 DQ1 DQ9 DQ2 DQ10 DQ3 DQ11 Pad Center (mils) X 0.00 6.87 12.78 18.62 24.53 30.37 36.29 42.12 48.04 55.68 57.48 57.48 57.13 51.29 45.87 40.04 34.61 28.78 23.36 17.43 12.00 2.42 –9.49 –24.48 –30.32 –35.74 –41.57 –47.00 –52.83 –58.25 –64.09 –64.44 –64.44 –64.44 –54.94 –47.36 –41.45 –35.61 –29.69 –23.86 –17.94 –12.11 –6.19 Y 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 –1.35 6.50 18.04 172.01 172.01 172.01 172.01 172.01 172.01 171.76 172.01 172.01 175.78 175.78 172.01 172.01 172.01 172.01 172.01 172.01 172.01 172.01 18.04 6.50 –3.79 –2.27 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.00 Pad Center (millimeters) X Y 0.0000 0.0000 0.1745 0.0000 0.3246 0.0000 0.4729 0.0000 0.6231 0.0000 0.7714 0.0000 0.9218 0.0000 1.0698 0.0000 1.2202 0.0000 1.4143 –0.0343 1.4600 0.1651 1.4600 0.4582 1.4511 4.3691 1.3028 4.3691 1.1651 4.3691 1.0170 4.3691 0.8791 4.3691 0.7310 4.3691 0.5933 4.3627 0.4427 4.3691 0.3048 4.3691 0.0615 4.4648 –0.2411 4.4648 –0.6218 4.3691 –0.7701 4.3691 –0.9078 4.3691 –1.0559 4.3691 –1.1938 4.3691 –1.3419 4.3691 –1.4796 4.3691 –1.6279 4.3691 –1.6368 0.4582 –1.6368 0.1651 –1.6368 –0.0962 –1.3955 –0.0576 –1.2030 0.0000 –1.0528 0.0000 –0.9045 0.0000 –0.7541 0.0000 –0.6061 0.0000 –0.4557 0.0000 –0.3076 0.0000 –0.1572 0.0000 Note: The coordinates above are relative to the center of pad 1 and can be used to operate wire bonding equipment. 4 Am29F400B Known Good Die S U P P L E M E N T ORDERING INFORMATION Standard Products AMD standard products are available in several packages and operating ranges. The order number (Valid Combination) is formed by a combination of the following: Am29F400B T -75 DP C 2 DIE REVISION This number refers to the specific AMD manufacturing process and product technology reflected in this document. It is entered in the revision field of AMD standard product nomenclature. TEMPERATURE RANGE C = Commercial (0°C to +70°C) I = Industrial (–40°C to +85°C) E = Extended (–55°C to +125°C) Contact AMD for higher temperature range devices. PACKAGE TYPE AND MINIMUM ORDER QUANTITY DP = Waffle Pack 140 die per 5 tray stack DG = Gel-Pak® Die Tray 594 die per 6 tray stack DT = Surftape™ (Tape and Reel) 2500 per 7-inch reel DW = Gel-Pak® Wafer Tray (sawn wafer on frame) Call AMD sales office for minimum order quantity SPEED OPTION See Product Selector Guide and Valid Combinations BOOT CODE SECTOR ARCHITECTURE T = Top sector B = Bottom sector DEVICE NUMBER/DESCRIPTION Am29F400B Known Good Die 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS Flash Memory—Die Revision 2 5.0 Volt-only Program and Erase Valid Combinations AM29F400BT-75 AM29F400BB-75 AM29F400BT-90 AM29F400BB-90 AM29F400BT-120 AM29F400BB-120 DPC 2, DPI 2, DPE 2, DGC 2, DGI 2, DGE 2, DTC 2, DTI 2, DTE 2, DWC 2, DWI 2, DWE 2 Valid Combinations Valid Combinations list configurations planned to be supported in volume for this device. Consult the local AMD sales office to confirm availability of specific valid combinations and to check on newly released combinations. Am29F400B Known Good Die 5 S U P P L E M E N T PACKAGING INFORMATION Surftape Packaging Direction of Feed 12 mm Orientation relative to leading edge of tape and reel AMD logo location Gel-Pak and Waffle Pack Packaging Orientation relative to top left corner of Gel-Pak and Waffle Pack cavity plate AMD logo location 6 Am29F400B Known Good Die S U P P L E M E N T PRODUCT TEST FLOW Figure 1 provides an overview of AMD’s Known Good Die test flow. For more detailed information, refer to the Am29F400B product qualification database supplement for KGD. AMD implements quality assurance procedures throughout the product test flow. In addition, Wafer Sort 1 Bake 24 hours at 250°C Wafer Sort 2 Wafer Sort 3 High Temperature Packaging for Shipment an off-line quality monitoring program (QMP) further guarantees AMD quality standards are met on Known Good Die products. These QA procedures also allow AMD to produce KGD products without requiring or implementing burn-in. DC Parameters Functionality Programmability Erasability Data Retention DC Parameters Functionality Programmability Erasability DC Parameters Functionality Programmability Erasability Speed Incoming Inspection Wafer Saw Die Separation 100% Visual Inspection Die Pack Shipment Figure 1. AMD KGD Product Test Flow Am29F400B Known Good Die 7 S U P P L E M E N T PHYSICAL SPECIFICATIONS MANUFACTURING INFORMATION Die Dimensions . . . . . . . . . . . . . . 135 mils x 198 mils . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.42 mm x 5.02 mm Manufacturing . . . . . . . . . . . . . . . . . . . . . . . . . . FASL Die Thickness. . . . . . . . . . . . . . . . . ~500 µm/~20 mils Test . . . . . . . . . . . . . . . . . . . . . . Sunnyvale, CA, USA, . . . . . . . . . . . . . . . . . . . . . . . . .and Penang, Malaysia Bond Pad Size . . . . . . . . . . . . . . 4.69 mils x 4.69 mils . . . . . . . . . . . . . . . . . . . . . . . . . . 115.9 µm x 115.9 µm Manufacturing ID (Top Boot) . . . . . . . . . . . . 98F02AK (Bottom Boot) . . . . . . . 98F02ABK Pad Area Free of Passivation . . . . . . . . . 13.98 mils2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9,025 µm2 Preparation for Shipment . . . . . . . . Penang, Malaysia Pads Per Die . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .43 Die Revision . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Bond Pad Metallization . . . . . . . . . . . . . . . . . . . Al/Cu SPECIAL HANDLING INSTRUCTIONS Die Backside . . . . . . . . . . . . . . . . . . . . . . . . No metal, . . . . . . . . . . . . . . . . . . . . may be grounded (optional) Processing Passivation . . . . . . . . . . . . . . . . . . . . . . SiN/SOG/SiN DC OPERATING CONDITIONS VCC (Supply Voltage) . . . . . . . . . . . . . . . 4.5 V to 5.5 V Junction Temperature Under Bias . .TJ (max) = 130°C Operating Temperature Commercial . . . . . . . . . . . . . . . . . . . 0°C to +70°C Industrial . . . . . . . . . . . . . . . . . . . –40°C to +85°C Extended . . . . . . . . . . . . . . . . . . –55°C to +125°C Contact AMD for higher temperature range devices. 8 Fabrication Process . . . . . . . . . . . . . . . . . . . . CS39S Do not expose KGD products to ultraviolet light or process them at temperatures greater than 250°C. Failure to adhere to these handling instructions will result in irreparable damage to the devices. For best yield, AMD recommends assembly in a Class 10K clean room with 30% to 60% relative humidity. Storage Store at a maximum temperature of 30°C in a nitrogenpurged cabinet or vacuum-sealed bag. Observe all standard ESD handling procedures. Am29F400B Known Good Die S U P P L E M E N T TERMS AND CONDITIONS OF SALE FOR AMD NON-VOLATILE MEMORY DIE All transactions relating to unpackaged die under this agreement shall be subject to AMD’s standard terms and conditions of sale, or any revisions thereof, which revisions AMD reserves the right to make at any time and from time to time. In the event of conflict between the provisions of AMD’s standard terms and conditions of sale and this agreement, the terms of this agreement shall be controlling. AMD warrants unpackaged die of its manufacture (“Known Good Die” or “Die”) against defective materials or workmanship for a period of one (1) year from date of shipment. This warranty does not extend beyond the first purchaser of said Die. Buyer assumes full responsibility to ensure compliance with the appropriate handling, assembly and processing of Known Good Die (including but not limited to proper Die preparation, Die attach, wire bonding and related assembly and test activities), and compliance with all guidelines set forth in AMD’s specifications for Known Good Die, and AMD assumes no responsibility for environmental effects on Known Good Die or for any activity of Buyer or a third party that damages the Die due to improper use, abuse, negligence, improper installation, accident, loss, damage in transit, or unauthorized repair or alteration by a person or entity other than AMD (“Warranty Exclusions”). The liability of AMD under this warranty is limited, at AMD’s option, solely to repair the Die, to send replacement Die, or to make an appropriate credit adjustment or refund in an amount not to exceed the original purchase price actually paid for the Die returned to AMD, provided that: (a) AMD is promptly notified by Buyer in writing during the applicable warranty period of any defect or nonconformity in the Known Good Die; (b) Buyer obtains authorization from AMD to return the defective Die; (c) the defective Die is returned to AMD by Buyer in accordance with AMD’s shipping instructions set forth below; and (d) Buyer shows to AMD’s satisfaction that such alleged defect or nonconformity actually exists and was not caused by any of the abovereferenced Warranty Exclusions. Buyer shall ship such defective Die to AMD via AMD’s carrier, collect. Risk of loss will transfer to AMD when the defective Die is provided to AMD’s carrier. If Buyer fails to adhere to these warranty returns guidelines, Buyer shall assume all risk of loss and shall pay for all freight to AMD’s specified location. The aforementioned provisions do not extend the original warranty period of any Known Good Die that has either been repaired or replaced by AMD. WITHOUT LIMITING THE FOREGOING, EXCEPT TO THE EXTENT THAT AMD EXPRESSLY WARRANTS TO BUYER IN A SEPARATE AGREEMENT SIGNED BY AMD, AMD MAKES NO WARRANTY WITH RESPECT TO THE DIE’S PROCESSING OF DATE DATA, AND SHALL HAVE NO LIABILIT Y FOR DAMAGES OF ANY KIND, UNDER EQUITY, LAW, OR ANY OTHER THEORY, DUE TO THE FAILURE OF SUCH KNOWN GOOD DIE TO PROCESS ANY PARTICULAR DATA CONTAINING DATES, INCLUDING DATES IN AND AFTER THE YEAR 2000, WHETHER OR NOT AMD RECEIVED NOTICE OF THE POSSIBILITY OF SUCH DAMAGES. THIS WARRANTY IS EXPRESSED IN LIEU OF ALL OTHER WARRANTIES, EXPRESSED OR IMPLIED, INCLUDING THE IMPLIED WARRANTY OF FITNESS FOR A PARTICULAR PURPOSE, THE IMPLIED WARRANTY OF MERCHANTABILITY AND OF ALL OTHER OBLIGATIONS OR LIABILITIES ON AMD’s PART, AND IT NEITHER ASSUMES NOR AUTHORIZES ANY OTHER PERSON TO ASSUME FOR AMD ANY OTHER LIABILITIES. THE FOREGOING CONSTITUTES THE BUYER’S SOLE AND EXCLUSIVE REMEDY FOR THE FURNISHING OF DEFECTIVE OR NON CONFORMING KNOWN GOOD DIE AND AMD SHALL NOT IN ANY EVENT BE LIABLE FOR INCREASED MANUFACTURING COSTS, DOWNTIME COSTS, DAMAGES RELATING TO BUYER’S PROCUREMENT OF SUBSTITUTE DIE (i.e., “COST OF COVER”), LOSS OF PROFITS, REVENUES OR GOODWILL, LOSS OF USE OF OR DAMAGE TO ANY ASSOCIATED EQUIPMENT, OR ANY OTHER INDIRECT, INCIDENTAL, SPECIAL OR CONSEQUENTIAL DAMAGES BY REASON OF THE FACT THAT SUCH KNOWN GOOD DIE SHALL HAVE BEEN DETERMINED TO BE DEFECTIVE OR NON CONFORMING. Buyer agrees that it will make no warranty representations to its customers which exceed those given by AMD to Buyer unless and until Buyer shall agree to indemnify AMD in writing for any claims which exceed AMD’s warranty. Known Good Die are not designed or authorized for use as components in life support appliances, devices or systems where malfunction of the Die can reasonably be expected to result in a personal injury. Buyer’s use of Known Good Die for use in life support applications is at Buyer’s own risk and Buyer agrees to fully indemnify AMD for any damages resulting in such use or sale. Am29F400B Known Good Die 9 S U P P L E M E N T REVISION SUMMARY Manufacturing Information Revision A (May 1997) Initial release. Manufacturing ID: Changed to 98F02AK (top boot) and 98F02ABK (bottom boot) from 98965AK (top boot) and 98965ABK (bottom boot). Revision B (January 1998) Fabrication Process: Changed to CS39S from CS39. Formatted to match current template. Updated Distinctive Characteristics and General Description sections using the current main data sheet. Updated for CS39 process technology. Die Revision: Changed to 2 from 1. Revision B+1 (February 1998) Package Type and Minimum Order Quantity: Changed Waffle Pack to 140 die per 5 tray stack from 180 die per 5 tray stack. Changed Gel-Pak® Die Tray to 594 die per 6 tray stack from 378 die per 6 tray stack. Changed Surftape™ (Tape and Reel) to 2500 per 7-inch reel from 1800 per 7-inch reel. Distinctive Characteristics The minimum guarantee per sector is now 1 million cycles. Global Added -75 and -90 speed options. Revision C+1 (September 1998) Page 5, Ordering Information Page 7, Physical Specifications Pad Description Corrected coordinates for pads 2, 19, 22, 35, 40, and 42. Physical Specifications Changed die thickness specification to ~20 mils. Revision B+2 (May 1998) Die Dimensions: Changed to 3.42 mm x 5.02 mm from 3.43 mm x 5.03 mm. Bond Pad Size: Changed to 4.7 mils x 4.7 mils and 119.7 µm x 119.7 µm from 3.74 mils x 3.74 mils and 95 µm x 95 µm. Pad Area Free of Passivation: Changed to 13.98 mils2 and 9,025 µm2 from 20.85 mils2 and 13,433 µm2. Die Pad Locations Moved AMD logo to above pad 23. Bond Pad Metallization: Changed to Al/Cu from Al/Cu/Si. Revision C (June 1998) Page 7, Manufacturing Information Distinctive Characteristics Changed “Manufactured on 0.35 µm process technology” to “Manufactured on 0.32 µm process technology”. Manufacturing ID (Top Boot): Changed to 98F02AK from 98F02A. Revision D (November 1998) General Description Third paragraph: Changed “AMD’s 0.35 µm process technology” to “AMD’s 0.32 µm process technology”. Die Photograph Replaced with photograph of Die Revision 2. Global Revised document specifications for die shrink from 0.35 µm to 0.32 µm process technology. Terms and Conditions Replaced warranty with new version. Die Pad Locations Corrected the location of the AMD logo to above pad 22 from pad above pad 13. Modified figure to match new die photograph. Revision E (December 1998) Packaging Information Pad Description Added section. Moved orientation information from die photograph section into this section. Replaced table with new pad coordinates. Revision E+1 (February 1999) Physical Specifications Die Pad Locations Die Dimensions: Changed to 135 mils x 198 mils, 3.43 mm x 5.03 mm from 141.34 mils x 207.48 mils, 3.59 mm x 5.27 mm. Corrected top row of pad callouts. Revision E+2 (June 14, 1999) Physical Specifications Die Thickness: Added ~500 µm. Pad Area Free of Passivation: Changed to 20.85 mils2 and 13,433 µm2 from 15.52 mils2 and 10,000 µm2. Corrected the bond pad dimensions. Passivation: Changed to SiN/SOG/SiN from Nitride/ SOG/Nitride. 10 Am29F400B Known Good Die S U P P L E M E N T Revision E+3 (July 12, 1999) Revision E+4 (November 17, 1999) Ordering Information Distinctive Characteristics, Ordering Information, DC Operating Conditions Corrected the die revision indicated in the example and the valid combinations to 2. Added note to contact AMD for higher temperatrure range. Revision E+5 (June 27, 2001) Manufacturing Information Added Penang, Malaysia as a test facility (ACN2016). Trademarks Copyright © 2001 Advanced Micro Devices, Inc. All rights reserved. AMD, the AMD logo, and combinations thereof are registered trademarks of Advanced Micro Devices, Inc. Product names used in this publication are for identification purposes only and may be trademarks of their respective companies. Am29F400B Known Good Die 11