CSD17311Q5 www.ti.com SLPS257 – MARCH 2010 30V N-Channel NexFET™ Power MOSFET Check for Samples: CSD17311Q5 PRODUCT SUMMARY FEATURES 1 • • • • • • • • 2 Optimized for 5V Gate Drive Ultra Low Qg and Qgd Low Thermal Resistance Avalanche Rated Pb Free Terminal Plating RoHS Compliant Halogen Free SON 5-mm × 6-mm Plastic Package VDS Drain to Source Voltage 30 V Qg Gate Charge Total (4.5V) 24 nC Qgd Gate Charge Gate to Drain RDS(on) Drain to Source On Resistance VGS(th) nC 2.3 mΩ VGS = 4.5V 1.8 mΩ VGS = 8V 1.6 mΩ Threshold Voltage 1.2 V ORDERING INFORMATION Device Package Media CSD17311Q5 SON 5-mm × 6-mm Plastic Package 13-Inch Reel APPLICATIONS • • 5.2 VGS = 3V Notebook Point-of-Load Point-of-Load Synchronous Buck in Networking, Telecom and Computing Systems Qty Ship 2500 Tape and Reel ABSOLUTE MAXIMUM RATINGS DESCRIPTION TA = 25°C unless otherwise stated The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications, and optimized for 5V gate drive applications. Top View S 1 8 D S 2 7 D S 3 G 4 6 D UNIT Drain to Source Voltage 30 V VGS Gate to Source Voltage +10 / –8 V Continuous Drain Current, TC = 25°C 100 A Continuous Drain Current(1) 32 A IDM Pulsed Drain Current, TA = 25°C(2) 200 A PD Power Dissipation(1) 3.2 W TJ, TSTG Operating Junction and Storage Temperature Range –55 to 150 °C EAS Avalanche Energy, Single Pulse ID = 113A, L = 0.1mH, RG = 25Ω 638 mJ ID (1) Typical RqJA = 40°C/W when mounted on a 1-inch2 (6.45-cm2), 2-oz. (0.071-mm thick) Cu pad on a 0.06-inch (1.52-mm) thick FR4 PCB. (2) Pulse duration ≤300ms, duty cycle ≤2% TextAddedForSpacing Text_added_for_spacing_Text_added_for_spacing D 5 VALUE VDS D P0094-01 RDS(on) vs VGS GATE CHARGE 8 ID = 30A VGS - Gate-to-Source Voltage - V RDS(on) - On-State Resistance - mΩ 6 5 4 T C = 125°C 3 2 T C = 25°C 1 ID = 30A VDS = 15V 7 6 5 4 3 2 1 0 0 0 1 2 3 4 5 6 7 8 VGS - Gate-to-Source Voltage - V 9 10 G006 0 5 10 15 20 25 Qg - Gate Charge - nC 30 35 40 G003 1 2 Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. NexFET is a trademark of Texas Instruments. PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. Copyright © 2010, Texas Instruments Incorporated CSD17311Q5 SLPS257 – MARCH 2010 www.ti.com These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT Static Characteristics BVDSS Drain to Source Voltage VGS = 0V, ID = 250mA IDSS Drain to Source Leakage Current VGS = 0V, VDS = 24V IGSS Gate to Source Leakage Current VDS = 0V, VGS = +10/–8V VGS(th) Gate to Source Threshold Voltage VDS = VGS, ID = 250mA RDS(on) Drain to Source On Resistance gfs Transconductance 30 0.9 V 1 mA 100 nA 1.2 1.6 V VGS = 3V, ID = 30A 2.3 3.1 mΩ VGS = 4.5V, ID = 30A 1.8 2.3 mΩ VGS = 8V, ID = 30A 1.6 2 mΩ VDS = 15V, ID = 30A 200 S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance 85 110 pF RG Series Gate Resistance 1.2 2.4 Ω Qg Gate Charge Total (4.5V) 24 31 nC Qgd Gate Charge Gate to Drain 5.2 nC Qgs Gate Charge Gate to Source 6.6 nC Qg(th) Gate Charge at Vth 3.9 nC Qoss Output Charge 47 nC td(on) Turn On Delay Time 12 ns tr Rise Time 18 ns td(off) Turn Off Delay Time 33 ns tf Fall Time 12 ns VGS = 0V, VDS = 15V, f = 1MHz VDS = 15V, IDS = 30A VDS = 14.8V, VGS = 0V VDS = 15V, VGS = 4.5V, IDS = 30A, RG = 2Ω 3290 4280 pF 1740 2260 pF Diode Characteristics VSD Diode Forward Voltage Qrr Reverse Recovery Charge trr Reverse Recovery Time ISD = 30A, VGS = 0V 0.85 VDD = 14.8V, IF = 30A, di/dt = 300A/ms 1 V 74 nC 39 ns THERMAL CHARACTERISTICS (TA = 25°C unless otherwise stated) PARAMETER RqJC Thermal Resistance Junction to Case (1) RqJA Thermal Resistance Junction to Ambient (1) (2) (1) (2) 2 2 MIN TYP MAX UNIT 1 °C/W 49 °C/W 2 RqJC is determined with the device mounted on a 1-inch (6.45-cm ), 2-oz. (0.071-mm thick) Cu pad on a 1.5-inch × 1.5-inch (3.81-cm × 3.81-cm), 0.06-inch (1.52-mm) thick FR4 PCB. RqJC is specified by design, whereas RqJA is determined by the user’s board design. Device mounted on FR4 material with 1-inch2 (6.45-cm2), 2-oz. (0.071-mm thick) Cu. Submit Documentation Feedback Copyright © 2010, Texas Instruments Incorporated Product Folder Link(s): CSD17311Q5 CSD17311Q5 www.ti.com SLPS257 – MARCH 2010 GATE GATE Source N-Chan 5x6 QFN TTA MIN Rev3 N-Chan 5x6 QFN TTA MAX Rev3 Max RqJA = 49°C/W when mounted on 1 inch2 (6.45 cm2) of 2-oz. (0.071-mm thick) Cu. Source Max RqJA = 120°C/W when mounted on a minimum pad area of 2-oz. (0.071-mm thick) Cu. DRAIN DRAIN M0137-02 M0137-01 Text Text Text and and and br br br Added Added Added for for for Spacing Spacing Spacing TYPICAL MOSFET CHARACTERISTICS TA = 25°C, unless otherwise specified ZqJA - Normalized Thermal Impedance 10 1 0.5 0.3 0.1 Duty Cycle = t1/t2 0.1 0.05 P 0.02 0.01 t1 0.01 t2 Typical RqJA = 96°C/W (min Cu) TJ = P ´ ZqJA ´ RqJA Single Pulse 0.001 0.001 0.01 0.1 1 tp - Pulse Duration - s 10 100 1k G012 Figure 1. Transient Thermal Impedance Submit Documentation Feedback Copyright © 2010, Texas Instruments Incorporated Product Folder Link(s): CSD17311Q5 3 CSD17311Q5 SLPS257 – MARCH 2010 www.ti.com TYPICAL MOSFET CHARACTERISTICS (continued) TA = 25°C, unless otherwise specified TEXT ADDED FOR SPACING 100 90 90 80 IDS - Drain-to-Source Current - A IDS - Drain-to-Source Current - A TEXT ADDED FOR SPACING 100 VGS = 8V 70 VGS = 4.5V 60 VGS = 3.5V 50 40 VGS = 3V 30 VGS = 2.5V 20 10 VDS = 5V 80 70 60 T C = 125°C 50 40 T C = 25°C 30 T C = -55°C 20 10 0 0 0 0.2 0.4 0.6 0.8 VDS - Drain-to-Source Voltage - V 1 1 1.2 1.4 G001 Figure 2. Saturation Characteristics TEXT ADDED FOR SPACING G002 TEXT ADDED FOR SPACING ID = 30A VDS = 15V 7 f = 1MHz VGS = 0V 8 7 6 C - Capacitance - nF VGS - Gate-to-Source Voltage - V 3 9 5 4 3 2 6 Coss = Cds + Cgd 5 Ciss = Cgd + Cgs 4 3 2 1 Crss = Cgd 1 0 0 0 5 10 15 20 25 Qg - Gate Charge - nC 30 35 40 0 5 10 15 20 VDS - Drain-to-Source Voltage - V G003 Figure 4. Gate Charge 25 30 G004 Figure 5. Capacitance TEXT ADDED FOR SPACING TEXT ADDED FOR SPACING 6 1.6 RDS(on) - On-State Resistance - mΩ ID = 250µA 1.4 VGS(th) - Threshold Voltage - V 2.8 Figure 3. Transfer Characteristics 8 1.2 1 0.8 0.6 0.4 0.2 0 -75 ID = 30A 5 4 T C = 125°C 3 2 T C = 25°C 1 0 -25 25 75 T C - Case Temperature - °C 125 175 0 1 G005 Figure 6. Threshold Voltage vs. Temperature 4 1.6 1.8 2 2.2 2.4 2.6 VGS - Gate-to-Source Voltage - V 2 3 4 5 6 7 8 VGS - Gate-to-Source Voltage - V 9 10 G006 Figure 7. On-State Resistance vs. Gate-to-Source Voltage Submit Documentation Feedback Copyright © 2010, Texas Instruments Incorporated Product Folder Link(s): CSD17311Q5 CSD17311Q5 www.ti.com SLPS257 – MARCH 2010 TYPICAL MOSFET CHARACTERISTICS (continued) TA = 25°C, unless otherwise specified TEXT ADDED FOR SPACING TEXT ADDED FOR SPACING 1.6 100 ID = 30A VGS = 8V ISD - Source-to-Drain Current - A Normalized On-State Resistance 1.8 1.4 1.2 1 0.8 0.6 0.4 0.2 0 -75 10 1 T C = 125°C 0.1 T C = 25°C 0.01 0.001 0.0001 -25 25 75 T C - Case Temperature - °C 125 175 0 0.2 G007 Figure 8. Normalized On-State Resistance vs. Temperature 1 G008 Figure 9. Typical Diode Forward Voltage TEXT ADDED FOR SPACING TEXT ADDED FOR SPACING 1k I(AV) - Peak Avalanche Current - A 1k IDS - Drain-to-Source Current - A 0.4 0.6 0.8 VSD - Source-to-Drain Voltage - V 100 1ms 10 10ms 11110 100ms 1 Area Limited by RDS(on) 0.1 1s Single Pulse Typical R θJA = 96°C/W (min Cu) 0.01 0.01 DC 0.1 1 10 VDS - Drain-to-Source Voltage - V 100 100 T C = 25°C T C = 125°C 10 1 0.01 G009 Figure 10. Maximum Safe Operating Area 0.1 1 10 t(AV) - Time in Avalanche - ms 100 G010 Figure 11. Single Pulse Unclamped Inductive Switching TEXT ADDED FOR SPACING IDS - Drain-to-Source Current - A 120 100 80 60 40 20 0 -50 -25 0 25 50 75 100 125 T C - Case Temperature - °C 150 175 G011 Figure 12. Maximum Drain Current vs. Temperature Submit Documentation Feedback Copyright © 2010, Texas Instruments Incorporated Product Folder Link(s): CSD17311Q5 5 CSD17311Q5 SLPS257 – MARCH 2010 www.ti.com MECHANICAL DATA Q5 Package Dimensions K L L c1 E1 E2 b D2 4 4 5 5 e 3 6 3 6 E D1 7 7 2 2 8 8 1 1 q Top View Bottom View Side View c E1 A q Front View M0140-01 DIM MILLIMETERS MAX MIN MAX A 0.950 1.050 0.037 0.039 b 0.360 0.460 0.014 0.018 c 0.150 0.250 0.006 0.010 c1 0.150 0.250 0.006 0.010 D1 4.900 5.100 0.193 0.201 D2 4.320 4.520 0.170 0.178 E 4.900 5.100 0.193 0.201 E1 5.900 6.100 0.232 0.240 E2 3.920 4.12 0.154 e 6 INCHES MIN 1.27 TYP K 0.760 L 0.510 q 0.00 0.162 0.050 0.030 0.710 Submit Documentation Feedback 0.020 0.028 Copyright © 2010, Texas Instruments Incorporated Product Folder Link(s): CSD17311Q5 CSD17311Q5 www.ti.com SLPS257 – MARCH 2010 Recommended PCB Pattern F1 F7 DIM F3 8 1 F2 F11 F5 F9 5 4 F6 F8 F4 F10 M0139-01 MILLIMETERS INCHES MIN MAX MIN MAX F1 6.205 6.305 0.244 0.248 F2 4.460 4.560 0.176 0.180 F3 4.460 4.560 0.176 0.180 F4 0.650 0.700 0.026 0.028 F5 0.620 0.670 0.024 0.026 F6 0.630 0.680 0.025 0.027 F7 0.700 0.800 0.028 0.031 F8 0.650 0.700 0.026 0.028 F9 0.620 0.670 0.024 0.026 F10 4.900 5.000 0.193 0.197 F11 4.460 4.560 0.176 0.180 For recommended circuit layout for PCB designs, see application note SLPA005 – Reducing Ringing Through PCB Layout Techniques. K0 4.00 ±0.10 (See Note 1) 0.30 ±0.05 2.00 ±0.05 +0.10 –0.00 12.00 ±0.30 Ø 1.50 1.75 ±0.10 Text added for spacing Text added for spacing Q5 Tape and Reel Information 5.50 ±0.05 B0 R 0.30 MAX A0 8.00 ±0.10 Ø 1.50 MIN A0 = 6.50 ±0.10 B0 = 5.30 ±0.10 K0 = 1.40 ±0.10 R 0.30 TYP M0138-01 Notes: 1. 10-sprocket hole-pitch cumulative tolerance ±0.2 2. Camber not to exceed 1mm in 100mm, noncumulative over 250mm 3. Material: black static-dissipative polystyrene 4. All dimensions are in mm (unless otherwise specified) 5. Thickness: 0.30 ±0.05mm 6. MSL1 260°C (IR and convection) PbF reflow compatible Submit Documentation Feedback Copyright © 2010, Texas Instruments Incorporated Product Folder Link(s): CSD17311Q5 7 CSD17311Q5 SLPS257 – MARCH 2010 www.ti.com Package Marking Information Location 8 1st Line CSD = Fixed Characters NNNNN = Product Code 2nd Line (Date Code) YY = Last 2 digits of the Year WW = 2-digit Work Week C = Country of Origin 5 5 8 4 1 CSDNNNNN YYWWC LLLLL > Philippines = P > Taiwan = T > China = C 3rd Line LLLL = Last 5 digits of the Wafer Lot # 1 4 Pin 1 Identifier M0141-01 8 Submit Documentation Feedback Copyright © 2010, Texas Instruments Incorporated Product Folder Link(s): CSD17311Q5 PACKAGE OPTION ADDENDUM www.ti.com 2-Jul-2010 PACKAGING INFORMATION Orderable Device CSD17311Q5 Status (1) ACTIVE Package Type Package Drawing SON DQH Pins Package Qty 8 2500 Eco Plan (2) Pb-Free (RoHS Exempt) Lead/ Ball Finish Call TI MSL Peak Temp (3) Samples (Requires Login) Level-1-260C-UNLIM Purchase Samples (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability information and additional product content details. TBD: The Pb-Free/Green conversion plan has not been defined. Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes. Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above. Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material) (3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature. Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release. In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis. Addendum-Page 1 IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or service without notice. Customers should obtain the latest relevant information before placing orders and should verify that such information is current and complete. All products are sold subject to TI’s terms and conditions of sale supplied at the time of order acknowledgment. TI warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with TI’s standard warranty. Testing and other quality control techniques are used to the extent TI deems necessary to support this warranty. Except where mandated by government requirements, testing of all parameters of each product is not necessarily performed. TI assumes no liability for applications assistance or customer product design. Customers are responsible for their products and applications using TI components. To minimize the risks associated with customer products and applications, customers should provide adequate design and operating safeguards. TI does not warrant or represent that any license, either express or implied, is granted under any TI patent right, copyright, mask work right, or other TI intellectual property right relating to any combination, machine, or process in which TI products or services are used. Information published by TI regarding third-party products or services does not constitute a license from TI to use such products or services or a warranty or endorsement thereof. Use of such information may require a license from a third party under the patents or other intellectual property of the third party, or a license from TI under the patents or other intellectual property of TI. Reproduction of TI information in TI data books or data sheets is permissible only if reproduction is without alteration and is accompanied by all associated warranties, conditions, limitations, and notices. Reproduction of this information with alteration is an unfair and deceptive business practice. TI is not responsible or liable for such altered documentation. Information of third parties may be subject to additional restrictions. Resale of TI products or services with statements different from or beyond the parameters stated by TI for that product or service voids all express and any implied warranties for the associated TI product or service and is an unfair and deceptive business practice. TI is not responsible or liable for any such statements. TI products are not authorized for use in safety-critical applications (such as life support) where a failure of the TI product would reasonably be expected to cause severe personal injury or death, unless officers of the parties have executed an agreement specifically governing such use. Buyers represent that they have all necessary expertise in the safety and regulatory ramifications of their applications, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of TI products in such safety-critical applications, notwithstanding any applications-related information or support that may be provided by TI. Further, Buyers must fully indemnify TI and its representatives against any damages arising out of the use of TI products in such safety-critical applications. TI products are neither designed nor intended for use in military/aerospace applications or environments unless the TI products are specifically designated by TI as military-grade or "enhanced plastic." Only products designated by TI as military-grade meet military specifications. Buyers acknowledge and agree that any such use of TI products which TI has not designated as military-grade is solely at the Buyer's risk, and that they are solely responsible for compliance with all legal and regulatory requirements in connection with such use. TI products are neither designed nor intended for use in automotive applications or environments unless the specific TI products are designated by TI as compliant with ISO/TS 16949 requirements. Buyers acknowledge and agree that, if they use any non-designated products in automotive applications, TI will not be responsible for any failure to meet such requirements. Following are URLs where you can obtain information on other Texas Instruments products and application solutions: Products Applications Amplifiers amplifier.ti.com Audio www.ti.com/audio Data Converters dataconverter.ti.com Automotive www.ti.com/automotive DLP® Products www.dlp.com Communications and Telecom www.ti.com/communications DSP dsp.ti.com Computers and Peripherals www.ti.com/computers Clocks and Timers www.ti.com/clocks Consumer Electronics www.ti.com/consumer-apps Interface interface.ti.com Energy www.ti.com/energy Logic logic.ti.com Industrial www.ti.com/industrial Power Mgmt power.ti.com Medical www.ti.com/medical Microcontrollers microcontroller.ti.com Security www.ti.com/security RFID www.ti-rfid.com Space, Avionics & Defense www.ti.com/space-avionics-defense RF/IF and ZigBee® Solutions www.ti.com/lprf Video and Imaging www.ti.com/video Wireless www.ti.com/wireless-apps Mailing Address: Texas Instruments, Post Office Box 655303, Dallas, Texas 75265 Copyright © 2010, Texas Instruments Incorporated