EIC FBR5000 Fast recovery Datasheet

FBR5000 - FBR5010
FAST RECOVERY
BRIDGE RECTIFIERS
PRV : 50 - 1000 Volts
Io : 50 Amperes
BR50
FEATURES :
*
*
*
*
*
*
0.728(18.50)
0.688(17.40)
High case dielectric strength
High surge current capability
High reliability
Low reverse current
Low forward voltage drop
Fast switching for high efficiency
0.685(16.70) 1.130(28.70)
0.618(15.70) 1.120(28.40)
0.570(14.50)
0.530(13.40)
* Pb / RoHS Free
0.210(5.30)
0.200(5.10)
0.658(16.70)
0.618(15.70)
0.032(0.81)
0.028(0.71)
MECHANICAL DATA :
* Case : Molded plastic with heatsink integrally
mounted in the bridge encapsulation
* Epoxy : UL94V-O rate flame retardant
* Terminals : plated .25" (6.35 mm). Faston
* Polarity : Polarity symbols marked on case
* Mounting position : Bolt down on heat-sink with
silicone thermal compound between bridge
and mounting surface for maximum heat
transfer efficiency.
* Weight : 17.1 grams
0.252(6.40)
0.248(6.30)
φ 0.100(2.50)
0.090(2.30)
0.905(23.0)
0.826(21.0)
0.310(7.87)
0.280(7.11)
Metal Heatsink
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
SYMBOL
FBR
5000
FBR
5001
FBR
5002
FBR
5004
FBR
5006
FBR
5008
FBR
5010
UNIT
Maximum Recurrent Peak Reverse Voltage
VRRM
50
100
200
400
600
800
1000
V
Maximum RMS Voltage
VRMS
35
70
140
280
420
560
700
V
Maximum DC Blocking Voltage
VDC
50
100
200
400
600
800
1000
V
Maximum Average Forward Current Tc = 55 °C
IF(AV)
50
A
IFSM
400
A
2
I t
664
A2S
VF
1.3
V
IR
10
µA
RATING
Peak Forward Surge Current Single half sine wave
Superimposed on rated load (JEDEC Method)
Current Squared Time at t < 8.3 ms.
Maximum Forward Voltage drop per Diode at IF = 25 A
Maximum DC Reverse Current
Ta = 25 °C
at Rated DC Blocking Voltage
Ta = 100 °C
Maximum Reverse Recovery Time (Note 1)
Typical Thermal Resistance per diode (Note 2)
Operating Junction Temperature Range
Storage Temperature Range
IR(H)
T rr
1.0
200
mA
300
RθJC
1
TJ
- 50 to + 150
T STG
- 50 to + 150
500
ns
°C/W
°C
°C
Notes :
1 ) Measured with IF = 0.5 Amp., IR = 1 Amp., Irr = 0.25 Amp.
2 ) Thermal resistance from Junction to Case with units mounted on a 9"x5"x4.6" (22.9x12.7x11.7 cm) Al-Finned Heatsink.
Page 1 of 2
Rev. 02 : March 24, 2005
RATING AND CHARACTERISTIC CURVES ( FBR5000 - FBR5010 )
FIG.1 - REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
50 Ω
Trr
10 Ω
+ 0.5
+
D.U.T.
0
PULSE
GENERATOR
( NOTE 2 )
50 Vdc
(approx)
1Ω
- 0.25
OSCILLOSCOPE
( NOTE 1 )
- 1.0 A
SET TIME BASE FOR 50/200 ns/cm
NOTES : 1. Rise Time = 7 ns max., Input Impedance = 1 megaohm, 22 pF.
1
2. Rise time = 10 ns max., Source Impedance = 50 ohms.
3. All Resistors = Non-inductive Types.
FIG.3 - MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
500
50
PEAK FORWARD SURGE
CURRENT, AMPERES
AVERAGE FORWARD OUTPUT
CURRENT, AMPERES
FIG.2 - DERATING CURVE FOR OUTPUT
RECTIFIED CURRENT
40
30
20
10
Tc = 55 °C
400
300
200
100
60Hz RESISTIVE OR INDUCTIVE LOAD
0
0
25
50
75
100
125
150
0
175
1
CASE TEMPERATURE, ( °C)
FIG.4 - TYPICAL FORWARD CHARACTERISTICS
FORWARD CURRENT, AMPERES
4
6
10
20
40
60
100
FIG.5 - TYPICAL REVERSE CHARACTERISTICS
REVERSE CURRENT, MICROAMPERES
PER DIODE
100
10
1.0
Pulse Width = 300 µs
2% Duty Cycle
0.1
2
NUMBER OF CYCLES AT 60Hz
TJ = 25 °C
PER DIODE
10
TJ = 100 °C
1.0
0.1
TJ = 25 °C
0.01
0
20
40
60
80
100
120
140
PERCENT OF RATED REVERSE
VOLTAGE, (%)
0.01
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
FORWARD VOLTAGE, VOLTS
Page 2 of 2
Rev. 02 : March 24, 2005
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