ASI ASI10608 Npn silicon rf power transistor Datasheet

HF125-28
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI HF125-28 is Designed for
PACKAGE STYLE .500 4L FLG
FEATURES:
.112x45°
A
• PG = 15 dB min. at 100 W/30 MHz
• IMD3 = -30 dBc max. at 100 W (PEP)
• Omnigold™ Metalization System
FULL R
E
L
C
Ø.125 NOM.
C
B
B
E
H
E
D
G
F
MAXIMUM RATINGS
I J
IC
20 A
VCBO
65 V
VCEO
36 V
VEBO
270 W @ TC = 25 OC
TJ
-65 OC to +200 OC
O
O
T STG
-65 C to +150 C
θ JC
0.65 OC/W
SYMBOL
MINIMUM
inches / mm
inches / mm
A
.220 / 5.59
.230 / 5.84
MAXIMUM
.125 / 3.18
C
.245 / 6.22
.255 / 6.48
D
.720 / 18.28
.7.30 / 18.54
.125 / 3.18
E
PDISS
CHARACTERISTICS
DIM
B
4.0 V
K
F
.970 / 24.64
.980 / 24.89
G
.495 / 12.57
.505 / 12.83
H
.003 / 0.08
.007 / 0.18
I
.090 / 2.29
.110 / 2.79
J
.150 / 3.81
.175 / 4.45
.980 / 24.89
1.050 / 26.67
.280 / 7.11
K
L
ORDER CODE: ASI10608
TC = 25 OC
NONETEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
UNITS
BV CEO
IC = 100 mA
35
V
BV CES
IC = 100 mA
65
V
BV CBO
IC = 100 mA
65
BV EBO
IE = 10 mA
4.0
ICES
VCE = 30 V
hFE
VCE = 5.0 V
Cob
VCB = 30 V
GP
VCE = 28 V
PIN = 3.95 W
f = 30 MHz
IMD3
VCE = 28 V
ICQ = 100 mA
f = 30 MHz
IC = 5.0 A
V
10
f = 1.0 MHz
---
250
15
16
-34
15
mA
200
---
---
pF
dB
-30
dBc
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
1/1
Specifications are subject to change without notice.
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