TI1 ADC128S102CVAL Radiation hardened 8-channel, 50 ksps to 1 msps, 12-bit a/d converter Datasheet

Sample &
Buy
Product
Folder
Support &
Community
Tools &
Software
Technical
Documents
ADC128S102QML-SP
SNAS411O – AUGUST 2008 – REVISED AUGUST 2016
ADC128S102QML-SP Radiation Hardened 8-Channel, 50 kSPS to 1 MSPS, 12-Bit A/D
Converter
1 Features
3 Description
•
The ADC128S102 device is a low-power, eightchannel CMOS 12-bit analog-to-digital converter
specified for conversion throughput rates of 50 kSPS
to 1 MSPS. The converter is based on a successiveapproximation register architecture with an internal
track-and-hold circuit. The device can be configured
to accept up to eight input signals at inputs IN0
through IN7.
1
•
•
•
•
•
•
5962R07727
– Total Ionizing Dose 100 krad(Si)
– Single Event Latch-Up Immune 120 MeVcm2/mg
– Single Event Functional Interrupt Immune 120
MeV-cm2/mg
(See Radiation Report)
Eight Input Channels
Variable Power Management
Independent Analog and Digital Supplies
SPI™/QSPI™/MICROWIRE™/DSP Compatible
Packaged in 16-Lead Ceramic SOIC
Key Specifications
– Conversion Rate: 50 kSPS to 1 MSPS
– DNL (VA = VD = 5 V): +1.5 / −0.9 LSB
(Maximum)
– INL (VA = VD = 5 V): +1.4 / −1.25 LSB
(Maximum)
– Power Consumption
– 3-V Supply: 2.3 mW (Typical)
– 5-V Supply: 10.7 mW (Typical)
The output serial data is straight binary and is
compatible with several standards, such as SPI,
QSPI, MICROWIRE, and many common DSP serial
interfaces.
The ADC128S102 may be operated with independent
analog and digital supplies. The analog supply (VA)
can range from 2.7 V to 5.25 V, and the digital supply
(VD) can range from 2.7 V to VA. Normal power
consumption using a 3-V or 5-V supply is 2.3 mW
and 10.7 mW, respectively. The power-down feature
reduces the power consumption to 0.06 µW using a
3-V supply and 0.25 µW using a 5-V supply.
Device Information(1)
PART NUMBER
•
•
•
Satellites
– Attitude and Orbit Control
– Precision Sensors
– Motor Control
High Temperature
Medical Systems
Accelerators
PACKAGE
ADC128S102WGRQV
16-lead ceramic SOIC
ADC128S102WRQV
5962R0722701VFA
100 krad
16-lead ceramic flatpack
ADC128S102-MDR
5962R0722701V9A
100 krad
Die
ADC128S102WGMPR
Pre-Flight
Engineering
Prototype
16-lead ceramic SOIC
ADC128S102CVAL
Ceramic Evaluation
Board
2 Applications
•
GRADE
5962R0722701VZA
100 krad
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
Block Diagram
IN0
12-BIT
.
.
MUX
T/H
.
VA
SUCCESSIVE
APPROXIMATION
ADC
AGND
AGND
IN7
VD
SCLK
ADC128S102
CONTROL
LOGIC
CS
DIN
DOUT
DGND
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
ADC128S102QML-SP
SNAS411O – AUGUST 2008 – REVISED AUGUST 2016
www.ti.com
Table of Contents
1
2
3
4
5
6
Features ..................................................................
Applications ...........................................................
Description .............................................................
Revision History.....................................................
Pin Configuration and Functions .........................
Specifications.........................................................
6.1
6.2
6.3
6.4
6.5
6.6
6.7
6.8
6.9
7
1
1
1
2
4
5
Absolute Maximum Ratings ...................................... 5
ESD Ratings.............................................................. 5
Recommended Operating Conditions....................... 5
Thermal Information .................................................. 6
Electrical Characteristics: ADC128S102QML-SP
Converter ................................................................... 6
Electrical Characteristics: Radiation ......................... 8
Electrical Characteristics: Burn in Delta Parameters TA at 25°C .................................................................. 9
Timing Requirements ................................................ 9
Typical Characteristics ............................................ 11
Detailed Description ............................................ 16
7.1
7.2
7.3
7.4
Overview .................................................................
Functional Block Diagram .......................................
Feature Description.................................................
Device Functional Modes........................................
16
16
16
18
7.5 Programming........................................................... 19
8
Application and Implementation ........................ 21
8.1 Application Information............................................ 21
8.2 Typical Application ................................................. 21
9
Power Supply Recommendations...................... 23
9.1 Power Supply Sequence......................................... 23
9.2 Power Management ................................................ 23
9.3 Power Supply Noise Considerations....................... 23
10 Layout................................................................... 24
10.1 Layout Guidelines ................................................. 24
10.2 Layout Example .................................................... 24
11 Device and Documentation Support ................. 25
11.1
11.2
11.3
11.4
11.5
11.6
Device Support ....................................................
Receiving Notification of Documentation Updates
Community Resources..........................................
Trademarks ...........................................................
Electrostatic Discharge Caution ............................
Glossary ................................................................
25
26
26
26
26
26
12 Mechanical, Packaging, and Orderable
Information ........................................................... 27
12.1 Engineering Samples ............................................ 27
4 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from Revision N (September 2015) to Revision O
Page
•
Changed the title of the ADC128S102QML-SP data sheet ................................................................................................... 1
•
Added Radiation Report link to Features ............................................................................................................................... 1
•
Changed Applications............................................................................................................................................................. 1
•
Changed Device Information table ........................................................................................................................................ 1
•
Added 14-pin CFP package option to the data sheet ........................................................................................................... 1
•
Added TYPE column to the Pin Functions table ................................................................................................................... 4
•
Added tablenote for digital supply voltage maximums allowed in the Absolute Maximum Ratings table .............................. 5
•
Updated maximum tablenote for the digital supply voltage in the Absolute Maximum Ratings table.................................... 5
•
Added tablenote for the voltage on any pin to GND maximums allowed in the Absolute Maximum Ratings table ............... 5
•
Added links to the Quality Conformance Inspection table to the Electrical Characteristics tables ........................................ 6
•
Added MIN and MAX test conditions for the SCLK duty cycle in the Electrical Characteristics: ADC128S102QML-SP
Converter table ....................................................................................................................................................................... 8
•
Changed ADC128S102 Operational Timing Diagram image ............................................................................................... 10
•
Changed first sentence and added MIL-STD-883G, Test Method 1019.7 link to the Total Ionizing Dose section.............. 18
•
Changed total ionizing dose rate from 0.16 to 0.027 rad(Si)/s............................................................................................. 18
•
Changed Single Event Latch-Up section to Single Event Latch-Up and Functional Interrupt ............................................. 18
•
Added sentence to Serial Interface section: Note that CS is asynchronous. ....................................................................... 19
•
Added Engineering Samples section.................................................................................................................................... 27
2
Submit Documentation Feedback
Copyright © 2008–2016, Texas Instruments Incorporated
Product Folder Links: ADC128S102QML-SP
ADC128S102QML-SP
www.ti.com
SNAS411O – AUGUST 2008 – REVISED AUGUST 2016
Changes from Revision H (October 2009) to Revision N
•
Page
Added Pin Configuration and Functions section, ESD Ratings table, Feature Description section, Device Functional
Modes, Application and Implementation section, Power Supply Recommendations section, Layout section, Device
and Documentation Support section, and Mechanical, Packaging, and Orderable Information section .............................. 1
Changes from Revision G (October 2009) to Revision H
Page
•
Added reference to Note 11. ................................................................................................................................................. 5
•
Added Note:11........................................................................................................................................................................ 5
•
Deleted 'TYPICAL' numbers from tDHID, tDS and tDIH ............................................................................................................... 6
•
Changed Min limit on tDHID from 11 to 7. ............................................................................................................................... 6
Changes from Revision F (June 2009) to Revision G
•
Page
Deleted reference to Ta Min and Ta Max under titled sections. ........................................................................................... 6
Changes from Revision E (April 2009) to Revision F
•
Page
Changed AC Electrical Characteristics - SCLK Duty Cycle, typ limits .................................................................................. 8
Changes from Revision C (November 2008) to Revision D
Page
•
Moved Rad information from Key Specifications to Features ................................................................................................ 1
•
Deleted ADC128S102WGMLS reference .............................................................................................................................. 6
•
Added Burn In Delta Table ..................................................................................................................................................... 9
Changes from Revision B (August 2008) to Revision C
•
Page
Corrected package reference from 16-lead TSSOP to 16-lead Ceramic SOIC, Removed QV NSID reference and
Added SMD Number to RQV NSID in Features. ................................................................................................................... 1
Changes from Revision A (August 2008) to Revision B
•
Page
Typo, Changed Figure 2, tDIS lower left hand side changed to tDS and tDIH lower left hand side change to tDH in
Timing Diagrams. ................................................................................................................................................................ 10
Copyright © 2008–2016, Texas Instruments Incorporated
Product Folder Links: ADC128S102QML-SP
Submit Documentation Feedback
3
ADC128S102QML-SP
SNAS411O – AUGUST 2008 – REVISED AUGUST 2016
www.ti.com
5 Pin Configuration and Functions
NAC Package
16-Pin CFP
Top View
CS
1
16
SCLK
VA
2
15
DOUT
AGND
3
14
DIN
IN0
4
13
VD
IN1
5
12
DGND
IN2
6
11
IN7
IN3
7
10
IN6
IN4
8
9
IN5
Not to scale
Pin Functions
PIN
NAME
NO.
TYPE
DESCRIPTION
ANALOG I/O
4
5
6
IN0 to IN7
7
8
Input
(Analog)
Analog inputs. These signals can range from 0 V to VREF.
9
10
11
DIGITAL I/O
CS
1
Input
(Digital)
Chip select. On the falling edge of CS, a conversion process begins. Conversions
continue as long as CS is held low.
DIN
14
Input
(Digital)
Digital data input. The ADC128S102QML-SP's Control Register is loaded through this
pin on rising edges of the SCLK pin.
DOUT
15
Output
(Digital)
Digital data output. The output samples are clocked out of this pin on the falling edges
of the SCLK pin.
SCLK
16
Input
(Digital)
Digital clock input. The specified performance range of frequencies for this input is 0.8
MHz to 16 MHz. This clock directly controls the conversion and readout processes.
AGND
3
Ground
The ground return for the analog supply and signals.
DGND
12
Ground
The ground return for the digital supply and signals.
VA
2
Supply
Positive analog supply pin. This voltage is also used as the reference voltage. This
pin should be connected to a quiet 2.7 V to 5.25 V source and bypassed to GND with
1-µF and 0.1-µF monolithic ceramic capacitors located within 1 cm of the power pin.
VD
13
Supply
Positive digital supply pin. This pin should be connected to a 2.7 V to VA supply, and
bypassed to GND with a 0.1-µF monolithic ceramic capacitor located within 1 cm of
the power pin.
POWER SUPPLY
4
Submit Documentation Feedback
Copyright © 2008–2016, Texas Instruments Incorporated
Product Folder Links: ADC128S102QML-SP
ADC128S102QML-SP
www.ti.com
SNAS411O – AUGUST 2008 – REVISED AUGUST 2016
6 Specifications
6.1 Absolute Maximum Ratings (1)
MIN
MAX
UNIT
VA
Analog supply voltage
–0.3
6.5
V
VD
Digital supply voltage (2)
–0.3
VA + 0.3
V
Voltage on any pin to GND
–0.3
VA + 0.3
V
±10
mA
Input current at any pin
Tstg
(1)
(2)
(3)
(4)
(3)
(4)
Power dissipation TA = 25°C
See
Package input current (3)
±20 mA
mA
Soldering temperature, 10 seconds
260
°C
Junction temperature
175
°C
150
°C
Storage temperature
–65
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating
Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
The maximum voltage is not to exceed 6.5 V
When the input voltage at any pin exceeds the power supplies (that is, VIN less than AGND or VIN greater than VA or VD), the current at
that pin should be limited to 10 mA. The 20 mA maximum package input current rating limits the number of pins that can safely exceed
the power supplies with an input current of 10 mA to two.
The absolute maximum junction temperature (TJmax) for this device is 175°C. The maximum allowable power dissipation is dictated by
TJmax, the junction-to-ambient thermal resistance (RθJA), and the ambient temperature (TA), and can be calculated using the formula
PDMAX = (TJmax − TA)/RθJA. The values for maximum power dissipation listed above will be reached only when the ADC128S102QMLSP is operated in a severe fault condition (for example, when input or output pins are driven beyond the power supply voltages, or the
power supply polarity is reversed). Obviously, such conditions should always be avoided.
6.2 ESD Ratings
V(ESD)
(1)
(2)
Electrostatic discharge
Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001 (1) (2)
VALUE
UNIT
±8000
V
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
Human body model is 100-pF capacitor discharged through a 1.5-kΩ resistor. Machine model is 220 pF discharged through 0 Ω.
6.3 Recommended Operating Conditions
See
(1) (2)
MIN
MAX
UNIT
Operating temperature
–55
125
°C
VA supply voltage
2.7
5.25
V
VD supply voltage
2.7
VA
V
Digital input voltage
0
VA
V
Analog input voltage
0
VA
V
0.8
16
MHz
Clock frequency
(1)
(2)
Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Recommended Operating Conditions indicate
conditions for which the device is functional, but do not verify specific performance limits. For specifications and test conditions, see the
Electrical Characteristics. The specified specifications apply only for the test conditions listed. Some performance characteristics may
degrade when the device is not operated under the listed test conditions.
All voltages are measured with respect to GND = 0 V, unless otherwise specified.
Copyright © 2008–2016, Texas Instruments Incorporated
Product Folder Links: ADC128S102QML-SP
Submit Documentation Feedback
5
ADC128S102QML-SP
SNAS411O – AUGUST 2008 – REVISED AUGUST 2016
www.ti.com
6.4 Thermal Information
ACD128S102QML-SP
THERMAL METRIC (1)
NAC (CFP)
UNIT
16 PINS
RθJA
Junction-to-ambient thermal resistance
127
°C/W
RθJC(top)
Junction-to-case (top) thermal resistance
11.2
°C/W
(1)
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
6.5 Electrical Characteristics: ADC128S102QML-SP Converter
The following specifications apply for AGND = DGND = 0V, fSCLK = 0.8 MHz to 16 MHz, fSAMPLE = 50 kSPS to 1 MSPS, CL =
50pF, unless otherwise noted.
PARAMETER
TEST CONDITIONS
SUBGROUP
MIN
TYP (1)
MAX
UNIT
STATIC CONVERTER CHARACTERISTICS
Resolution with no missing
codes
Integral non-linearity (end
point method)
INL
[1, 2, 3]
–1
±0.6
1.1
LSB
VA = VD = 5 V
[1, 2, 3]
–1.25
±0.9
1.4
LSB
0.5
0.9
LSB
Differential non-linearity
VA = VD = 5 V
VOFF
Offset error
OEM
Offset error match
FSE
Full scale error
FSEM Full scale error match
Bits
VA = VD = 3 V
VA = VD = 3 V
DNL
12
[1, 2, 3]
[1, 2, 3]
–0.7
[1, 2, 3]
–0.3
0.9
LSB
1.5
LSB
[1, 2, 3]
–0.9
−0.5
VA = VD = 3 V
[1, 2, 3]
–2.3
0.8
2.3
LSB
VA = VD = 5 V
[1, 2, 3]
–2.3
1.1
2.3
LSB
VA = VD = 3 V
[1, 2, 3]
–1.5
±0.1
1.5
LSB
VA = VD = 5 V
[1, 2, 3]
–1.5
±0.3
1.5
LSB
VA = VD = 3 V
[1, 2, 3]
–2
0.8
2
LSB
VA = VD = 5 V
[1, 2, 3]
–2
0.3
2
LSB
VA = VD = 3 V
[1, 2, 3]
–1.5
±0.1
1.5
LSB
VA = VD = 5 V
[1, 2, 3]
–1.5
±0.3
1.5
LSB
LSB
DYNAMIC CONVERTER CHARACTERISTICS
FPBW
SINA
D
SNR
THD
SFDR
(1)
6
Full power bandwidth (–3
dB)
Signal-to-noise plus
distortion ratio
Signal-to-noise ratio
Total harmonic distortion
Spurious-free dynamic range
VA = VD = 3 V
6.8
MHz
VA = VD = 5 V
10
MHz
VA = VD = 3 V,
fIN = 40.2 kHz, −0.02 dBFS
[4, 5, 6]
68
72
dB
VA = VD = 5 V,
fIN = 40.2 kHz, −0.02 dBFS
[4, 5, 6]
68
72
dB
VA = VD = 3 V,
fIN = 40.2 kHz, −0.02 dBFS
[4, 5, 6]
69
72
dB
VA = VD = 5 V,
fIN = 40.2 kHz, −0.02 dBFS
[4, 5, 6]
68.5
72
dB
VA = VD = 3 V,
fIN = 40.2 kHz, −0.02 dBFS
[4, 5, 6]
–86
–74
dB
VA = VD = 5 V,
fIN = 40.2 kHz, −0.02 dBFS
[4, 5, 6]
–87
–74
dB
VA = VD = 3 V,
fIN = 40.2 kHz, −0.02 dBFS
[4, 5, 6]
75
91
dB
VA = VD = 5 V,
fIN = 40.2 kHz, −0.02 dBFS
[4, 5, 6]
75
90
dB
Typical figures are at TJ = 25°C, and represent most likely parametric norms.
Submit Documentation Feedback
Copyright © 2008–2016, Texas Instruments Incorporated
Product Folder Links: ADC128S102QML-SP
ADC128S102QML-SP
www.ti.com
SNAS411O – AUGUST 2008 – REVISED AUGUST 2016
Electrical Characteristics: ADC128S102QML-SP Converter (continued)
The following specifications apply for AGND = DGND = 0V, fSCLK = 0.8 MHz to 16 MHz, fSAMPLE = 50 kSPS to 1 MSPS, CL =
50pF, unless otherwise noted.
SUBGROUP
MIN
TYP (1)
VA = VD = 3 V,
fIN = 40.2 kHz
[4, 5, 6]
11.1
11.6
Bits
VA = VD = 5 V,
fIN = 40.2 kHz, −0.02 dBFS
[4, 5, 6]
11.1
11.6
Bits
VA = VD = 3 V,
fIN = 20 kHz
84
dB
VA = VD = 5 V,
fIN = 20 kHz, −0.02 dBFS
85
dB
PARAMETER
ENOB Effective number of bits
ISO
Channel-to-channel isolation
Intermodulation distortion,
second order terms
IMD
Intermodulation distortion,
third order terms
TEST CONDITIONS
MAX
UNIT
VA = VD = 3 V,
fa = 19.5 kHz, fb = 20.5 kHz
[4, 5, 6]
–93
–78
dB
VA = VD = 5 V,
fa = 19.5 kHz, fb = 20.5 kHz
[4, 5, 6]
–93
–78
dB
VA = VD = 3 V,
fa = 19.5 kHz, fb = 20.5 kHz
[4, 5, 6]
–91
–70
dB
VA = VD = 5 V,
fa = 19.5 kHz, fb = 20.5 kHz
[4, 5, 6]
–91
–70
dB
±1
µA
ANALOG INPUT CHARACTERISTICS
VIN
Input range
IDCL
DC leakage current
CINA
Input capacitance
0 to VA
[1, 2, 3]
Track mode, see
Hold mode, see
±0.01
(2)
(2)
V
38
pF
4.5
pF
DIGITAL INPUT CHARACTERISTICS
VA = VD = 2.7 V to 3.6 V
[1, 2, 3]
2.1
VA = VD = 4.75 V to 5.25 V
[1, 2, 3]
2.4
Input low voltage
VA = VD = 2.7 V to 5.25 V
[1, 2, 3]
IIN
Input current
VIN = 0 V or VD
[1, 2, 3]
CIND
Digital input capacitance
See
VIH
Input high voltage
VIL
V
V
±1
(2)
0.8
V
±1
µA
3.5
pF
DIGITAL OUTPUT CHARACTERISTICS
VOH
Output high voltage
ISOURCE = 200 µA,
VA = VD = 2.7 V to 5.25 V
[1, 2, 3]
VOL
Output low voltage
ISINK = 200 µA to 1 mA,
VA = VD = 2.7 V to 5.25 V
[1, 2, 3]
IOZH,
IOZL
Hi-impedance output
leakage current
VA = VD = 2.7 V to 5.25 V
[1, 2, 3]
COUT
Hi-impedance output
capacitance
See
VD
–0.5
V
±0.01
(2)
Output coding
0.4
V
±1
µA
3.5
pF
Straight (Natural) Binary
POWER SUPPLY CHARACTERISTICS (CL = 10 pF)
VA, VD
Analog and digital supply
voltages
Total supply current,
normal mode ( CS low)
IA + ID
Total supply current,
shutdown mode (CS high)
(2)
[1, 2, 3]
VA ≥ VD
2.7
V
[1, 2, 3]
5.25
V
VA = VD = 2.7 V to 3.6 V,
fSAMPLE = 1 MSPS, fIN = 40 kHz
[1, 2, 3]
0.9
1.5
mA
VA = VD = 4.75 V to 5.25 V,
fSAMPLE = 1 MSPS, fIN = 40 kHz
[1, 2, 3]
2.2
3.1
mA
VA = VD = 2.7 V to 3.6 V,
fSCLK = 0 kSPS
[1, 2, 3]
0.11
1
μA
VA = VD = 4.75 V to 5.25 V,
fSCLK = 0 kSPS
[1, 2, 3]
0.12
1.4
μA
This parameter is specified by design and/or characterization and is not tested in production.
Copyright © 2008–2016, Texas Instruments Incorporated
Product Folder Links: ADC128S102QML-SP
Submit Documentation Feedback
7
ADC128S102QML-SP
SNAS411O – AUGUST 2008 – REVISED AUGUST 2016
www.ti.com
Electrical Characteristics: ADC128S102QML-SP Converter (continued)
The following specifications apply for AGND = DGND = 0V, fSCLK = 0.8 MHz to 16 MHz, fSAMPLE = 50 kSPS to 1 MSPS, CL =
50pF, unless otherwise noted.
PARAMETER
Power consumption,
normal mode ( CS low)
PC
Power consumption,
shutdown mode (CS high)
TEST CONDITIONS
SUBGROUP
MIN
TYP (1)
MAX
UNIT
VA = VD = 3 V
fSAMPLE = 1 MSPS, fIN = 40 kHz
[1, 2, 3]
2.7
4.5
mW
VA = VD = 5 V
fSAMPLE = 1 MSPS, fIN = 40 kHz
[1, 2, 3]
11.0
15.5
mW
VA = VD = 3 V
fSCLK = 0 kSPS
[1, 2, 3]
0.33
3
µW
VA = VD = 5 V
fSCLK = 0 kSPS
[1, 2, 3]
0.6
7
µW
AC ELECTRICAL CHARACTERISTICS
fSCLK
MIN
Minimum clock frequency
VA = VD = 2.7 V to 5.25 V
[9, 10, 11]
fSCLK
Maximum clock frequency
VA = VD = 2.7 V to 5.25 V
[9, 10, 11]
fS
Sample rate continuous
mode
VA = VD = 2.7 V to 5.25 V
tCONVE
Conversion (hold) time
VA = VD = 2.7 V to 5.25 V
DC
SCLK duty cycle
VA = VD = 2.7 V to 5.25
V
tACQ
Acquisition (track) time
VA = VD = 2.7 V to 5.25 V
Throughput time
Acquisition time + conversion time
VA = VD = 2.7 V to 5.25 V
Aperture delay
VA = VD = 2.7 V to 5.25 V
RT
tAD
0.8
MHz
16
MHz
[9, 10, 11]
1
MSPS
[9, 10, 11]
13
SCLK
cycles
[9, 10, 11]
3
SCLK
cycles
[9, 10, 11]
16
SCLK
cycles
[9, 10, 11]
50
kSPS
MIN
40%
MAX
60%
4
ns
6.6 Electrical Characteristics: Radiation
The following specifications apply for VA = VD = 2.7 V to 5.25 V, AGND = DGND = 0 V, fSCLK = 0.8 MHz to 16 MHz, fSAMPLE =
50 kSPS to 1 MSPS, and CL = 50 pF. (1)
PARAMETER
Total supply current shutdown mode
(CS high)
IA + ID
IOZH, IOZL
(1)
8
TEST CONDITIONS
Hi-impedance output leakage current
SUBGROUP
MIN
TYP
MAX
UNIT
VA = VD = 2.7 V to 3.6 V,
fSCLK = 0 kSPS
[1]
30
µA
VA = VD = 4.75 V to 5.25 V,
fSCLK = 0 kSPS
[1]
100
µA
VA = VD = 2.7 V to 5.25 V
[1]
±10
µA
Pre and post irradiation limits are identical to those listed in the DC Parameters and AC and Timing Characteristics, except as listed in
Electrical Characteristics: Radiation. When performing post irradiation electrical measurements for any RHA level, TA = 25°C.
Submit Documentation Feedback
Copyright © 2008–2016, Texas Instruments Incorporated
Product Folder Links: ADC128S102QML-SP
ADC128S102QML-SP
www.ti.com
SNAS411O – AUGUST 2008 – REVISED AUGUST 2016
6.7 Electrical Characteristics: Burn in Delta Parameters - TA at 25°C
The following specifications apply for VA = VD = 2.7 V to 5.25 V, AGND = DGND = 0 V, fSCLK = 0.8 MHz to 16 MHz, fSAMPLE =
50 kSPS to 1 MSPS, and CL = 50 pF. (1)
PARAMETER
MIN
TYP
MAX
UNIT
VA = VD = 3 V
TEST CONDITIONS
–0.5
0.106
0.5
LSB
LSB
INL
Integral non-linearity
VA = VD = 5 V
–0.35
0.016
0.35
IMD
Intermodulation distortion,
second order terms
VA = VD = 3 V
–14
1.35
14
dB
VA = VD = 5 V
–17
1.67
17
dB
Intermodulation distortion, third
order terms
VA = VD = 3 V
–10
0.47
10
dB
VA = VD = 5 V
–10
0.9
10
dB
IMD
(1)
This is worse case drift, Deltas are performed at room temperature post operational life. All other parameters, no deltas are required.
6.8 Timing Requirements
The following specifications apply for VA = VD = 2.7 V to 5.25 V, AGND = DGND = 0 V, fSCLK = 0.8 MHz to 16 MHz, fSAMPLE =
50 kSPS to 1 MSPS, and CL = 50 pF.
SUBGROUP
MIN
NOM (1)
MAX
UNIT
tCSH
CS hold time after SCLK rising
edge
See
(2)
[9, 10, 11]
10
0
ns
tCSS
CS setup time prior to SCLK
rising edge
See
(2)
[9, 10, 11]
10
4.5
ns
tEN
CS falling edge to DOUT enabled
[9, 10, 11]
5
30
ns
tDACC
DOUT access time after SCLK falling edge
[9, 10, 11]
17
27
ns
tDHLD
DOUT hold time after SCLK falling edge
[9, 10, 11]
7
ns
tDS
DIN setup time prior to SCLK rising edge
[9, 10, 11]
10
ns
tDH
DIN hold time after SCLK rising edge
[9, 10, 11]
10
tCH
SCLK high time
tCL
SCLK low time
tDIS
CS rising edge to DOUT highimpedance
(1)
(2)
ns
0.4 × tSCLK
ns
0.4 × tSCLK
ns
DOUT falling
[9, 10, 11]
2.4
20
ns
DOUT rising
[9, 10, 11]
0.9
20
ns
Typical figures are at TJ = 25°C, and represent most likely parametric norms.
Clock may be in any state (high or low) when CS goes high. Setup and hold time restrictions apply only to CS going low.
Table 1. Quality Conformance Inspection (1)
(1)
SUBGROUP
DESCRIPTION
TEMP (°C)
1
Static tests at
25
2
Static tests at
125
3
Static tests at
–55
4
Dynamic tests at
25
5
Dynamic tests at
125
6
Dynamic tests at
–55
7
Functional tests at
25
8A
Functional tests at
125
8B
Functional tests at
–55
9
Switching tests at
25
10
Switching tests at
125
11
Switching tests at
–55
12
Setting time at
25
13
Setting time at
125
14
Setting time at
–55
MIL-STD-883, Method 5005 - Group A
Copyright © 2008–2016, Texas Instruments Incorporated
Product Folder Links: ADC128S102QML-SP
Submit Documentation Feedback
9
ADC128S102QML-SP
SNAS411O – AUGUST 2008 – REVISED AUGUST 2016
www.ti.com
Power
Down
Power Up
Track
Power Up
Hold
Track
Hold
CS
1
2
3
4
5
6
8
7
9
10
11
12
13
14
15
1
16
2
3
4
5
6
7
8
SCLK
Control register N
DIN
Control register N + 1
ADD2 ADD1 ADD0
ADD2 ADD1
ADD0
Data N ± 1
DOUT
Data N
DB11 DB10 DB9
FOUR ZEROS
DB8
DB7
DB6
DB5
DB4
DB3
DB2
DB1
DB11 DB10 DB9
FOUR ZEROS
DB0
Figure 1. ADC128S102 Operational Timing Diagram
CS
tCONVERT
tACQ
tCH
SCLK
1
2
3
4
5
6
7
tCL
tEN
DOUT
8
16
tDACC
DB11
FOUR ZEROS
DB10
tDHLD
DB9
DB8
tDIS
DB1
DB0
tDH
tDS
DIN
DONTC
DONTC
ADD2
ADD1
ADD0
DONTC
DONTC
DONTC
Figure 2. ADC128S102 Serial Timing Diagram
SCLK
tCSS
CS
tCSH
CS
Figure 3. SCLK and CS Timing Parameters
10
Submit Documentation Feedback
Copyright © 2008–2016, Texas Instruments Incorporated
Product Folder Links: ADC128S102QML-SP
ADC128S102QML-SP
www.ti.com
SNAS411O – AUGUST 2008 – REVISED AUGUST 2016
6.9 Typical Characteristics
TA = 25°C, fSAMPLE = 1 MSPS, fSCLK = 16 MHz, fIN = 40.2 kHz unless otherwise stated.
Figure 4. DNL
Figure 5. DNL
Figure 6. INL
Figure 7. INL
Figure 8. DNL vs Supply
Figure 9. INL vs Supply
Copyright © 2008–2016, Texas Instruments Incorporated
Product Folder Links: ADC128S102QML-SP
Submit Documentation Feedback
11
ADC128S102QML-SP
SNAS411O – AUGUST 2008 – REVISED AUGUST 2016
www.ti.com
Typical Characteristics (continued)
TA = 25°C, fSAMPLE = 1 MSPS, fSCLK = 16 MHz, fIN = 40.2 kHz unless otherwise stated.
12
Figure 10. SNR vs Supply
Figure 11. THD vs Supply
Figure 12. ENOB vs Supply
Figure 13. DNL vs SCLK Duty Cycle
Figure 14. INL vs SCLK Duty Cycle
Figure 15. SNR vs SCLK Duty Cycle
Submit Documentation Feedback
Copyright © 2008–2016, Texas Instruments Incorporated
Product Folder Links: ADC128S102QML-SP
ADC128S102QML-SP
www.ti.com
SNAS411O – AUGUST 2008 – REVISED AUGUST 2016
Typical Characteristics (continued)
TA = 25°C, fSAMPLE = 1 MSPS, fSCLK = 16 MHz, fIN = 40.2 kHz unless otherwise stated.
Figure 16. THD vs SCLK Duty Cycle
Figure 17. ENOB vs SCLK Duty Cycle
Figure 18. DNL vs SCLK
Figure 19. INL vs SCLK
Figure 20. DNL vs SCLK
Figure 21. INL vs SCLK
Copyright © 2008–2016, Texas Instruments Incorporated
Product Folder Links: ADC128S102QML-SP
Submit Documentation Feedback
13
ADC128S102QML-SP
SNAS411O – AUGUST 2008 – REVISED AUGUST 2016
www.ti.com
Typical Characteristics (continued)
TA = 25°C, fSAMPLE = 1 MSPS, fSCLK = 16 MHz, fIN = 40.2 kHz unless otherwise stated.
14
Figure 22. SNR vs SCLK
Figure 23. SNR vs SCLK
Figure 24. THD vs SCLK
Figure 25. THD vs SCLK
Figure 26. ENOB vs SCLK
Figure 27. ENOB vs SCLK
Submit Documentation Feedback
Copyright © 2008–2016, Texas Instruments Incorporated
Product Folder Links: ADC128S102QML-SP
ADC128S102QML-SP
www.ti.com
SNAS411O – AUGUST 2008 – REVISED AUGUST 2016
Typical Characteristics (continued)
TA = 25°C, fSAMPLE = 1 MSPS, fSCLK = 16 MHz, fIN = 40.2 kHz unless otherwise stated.
Figure 28. ENOB vs Temperature
Figure 29. DNL vs Temperature
Figure 30. INL vs Temperature
Figure 31. SNR vs Temperature
Figure 32. THD vs Temperature
Figure 33. Power Consumption vs SCLK
Copyright © 2008–2016, Texas Instruments Incorporated
Product Folder Links: ADC128S102QML-SP
Submit Documentation Feedback
15
ADC128S102QML-SP
SNAS411O – AUGUST 2008 – REVISED AUGUST 2016
www.ti.com
7 Detailed Description
7.1 Overview
The ADC128S102 is a successive-approximation analog-to-digital converter designed around a charge
redistribution digital-to-analog converter.
7.2 Functional Block Diagram
IN0
12-BIT
.
.
T/H
MUX
.
VA
SUCCESSIVE
APPROXIMATION
ADC
AGND
AGND
IN7
VD
SCLK
ADC128S102
CONTROL
LOGIC
CS
DIN
DOUT
DGND
7.3 Feature Description
7.3.1 ADC128S102 Transfer Function
The output format of the ADC128S102 is straight binary. Code transitions occur midway between successive
integer LSB values. The LSB width for the ADC128S102 is VA / 4096. The ideal transfer characteristic is shown
in Figure 34. The transition from an output code of 0000 0000 0000 to a code of 0000 0000 0001 is at 1/2 LSB,
or a voltage of VA / 8192. Other code transitions occur at steps of one LSB.
16
Submit Documentation Feedback
Copyright © 2008–2016, Texas Instruments Incorporated
Product Folder Links: ADC128S102QML-SP
ADC128S102QML-SP
www.ti.com
SNAS411O – AUGUST 2008 – REVISED AUGUST 2016
Feature Description (continued)
111...111
111...000
|
|
ADC CODE
111...110
1LSB = VA/4096
011...111
000...010
000...001
|
000...000
+VA - 1.5LSB
0V 0.5LSB
ANALOG INPUT
Figure 34. Ideal Transfer Characteristic
7.3.2 Analog Inputs
An equivalent circuit for one of the input channels of the ADC128S102 is shown in Figure 35. Diodes D1 and D2
provide ESD protection for the analog inputs. The operating range for the analog inputs is 0 V to VA. Going
beyond this range will cause the ESD diodes to conduct and result in erratic operation.
The capacitor C1 in Figure 35 has a typical value of 3 pF and is mainly the package pin capacitance. Resistor R1
is the ON-resistance of the multiplexer and track or hold switch and is typically 500 Ω. Capacitor C2 is the
ADC128S102 sampling capacitor, and is typically 30 pF. The ADC128S102 will deliver best performance when
driven by a low-impedance source (less than 100 Ω). This is especially important when using the ADC128S102
to sample dynamic signals. Also important when sampling dynamic signals is a band-pass or low-pass filter
which reduces harmonics and noise in the input. These filters are often referred to as anti-aliasing filters.
VA
D1
R1
C2
30 pF
VIN
C1
3 pF
D2
Conversion Phase - Switch Open
Track Phase - Switch Closed
Figure 35. Equivalent Input Circuit
7.3.3 Digital Inputs and Outputs
The digital inputs of the ADC128S102 (SCLK, CS, and DIN) have an operating range of 0 V to VA. The inputs are
not prone to latch-up and may be asserted before the digital supply (VD) without any risk. The digital output
(DOUT) operating range is controlled by VD. The output high voltage is VD – 0.5 V (minimum) while the output
low voltage is 0.4 V (maximum).
Copyright © 2008–2016, Texas Instruments Incorporated
Product Folder Links: ADC128S102QML-SP
Submit Documentation Feedback
17
ADC128S102QML-SP
SNAS411O – AUGUST 2008 – REVISED AUGUST 2016
www.ti.com
Feature Description (continued)
7.3.4 Radiation Environments
Careful consideration should be given to environmental conditions when using a product in a radiation
environment.
7.3.4.1 Total Ionizing Dose
Radiation hardness assured (RHA) products are those part numbers with a total ionizing dose (TID) level listed in
the Device Information table in the Description section. Testing and qualification of these products is done on a
wafer level according to MIL-STD-883G, Test Method 1019.7. Testing is done according to Condition A and the
Extended room temperature anneal test described in section 3.11 for application environment dose rates less
than 0.027 rad(Si)/s. Wafer level TID data is available with lot shipments.
7.3.4.2 Single Event Latch-Up and Functional Interrupt
One-time single event latch-up (SEL) and single event functional interrupt (SEFI) testing was preformed
according to EIA/JEDEC Standard, EIA/JEDEC57. The linear energy transfer threshold (LETth) shown in
Features is the maximum LET tested. A test report is available upon request.
7.3.4.3 Single Event Upset
A report on single event upset (SEU) is available upon request.
7.4 Device Functional Modes
7.4.1 ADC128S102 Operation
Simplified schematics of the ADC128S102 in both track and hold operation are shown in Figure 36 and Figure 37
respectively. In Figure 36, the ADC128S102 is in track mode: switch SW1 connects the sampling capacitor to
one of eight analog input channels through the multiplexer, and SW2 balances the comparator inputs. The
ADC128S102 is in this state for the first three SCLK cycles after CS is brought low.
Figure 37 shows the ADC128S102 in hold mode: switch SW1 connects the sampling capacitor to ground,
maintaining the sampled voltage, and switch SW2 unbalances the comparator. The control logic then instructs
the charge-redistribution DAC to add or subtract fixed amounts of charge to or from the sampling capacitor until
the comparator is balanced. When the comparator is balanced, the digital word supplied to the DAC is the digital
representation of the analog input voltage. The ADC128S102 is in this state for the last thirteen SCLK cycles
after CS is brought low.
IN0
CHARGE
REDISTRIBUTION
DAC
MUX
IN7
SAMPLING
CAPACITOR
SW1
+
-
SW2
CONTROL
LOGIC
AGND
VA /2
Figure 36. ADC128S102 in Track Mode
18
Submit Documentation Feedback
Copyright © 2008–2016, Texas Instruments Incorporated
Product Folder Links: ADC128S102QML-SP
ADC128S102QML-SP
www.ti.com
SNAS411O – AUGUST 2008 – REVISED AUGUST 2016
Device Functional Modes (continued)
IN0
CHARGE
REDISTRIBUTION
DAC
MUX
SAMPLING
CAPACITOR
IN7
SW1
+
SW2
-
CONTROL
LOGIC
AGND
V /2
A
Figure 37. ADC128S102 in Hold Mode
7.5 Programming
7.5.1 Serial Interface
An operational timing diagram and a serial interface timing diagram for the ADC128S102 are shown in Figure 1
to Figure 3. CS, chip select, initiates conversions and frames the serial data transfers. SCLK (serial clock)
controls both the conversion process and the timing of serial data. DOUT is the serial data output pin, where a
conversion result is sent as a serial data stream, MSB first. Data to be written to the ADC128S102's Control
Register is placed on DIN, the serial data input pin. New data is written to DIN with each conversion.
A serial frame is initiated on the falling edge of CS and ends on the rising edge of CS. Each frame must contain
an integer multiple of 16 rising SCLK edges. The ADC's DOUT pin is in a high impedance state when CS is high
and is active when CS is low. Note that CS is asynchronous. Thus, CS acts as an output enable. Similarly, SCLK
is internally gated off when CS is brought high.
During the first 3 cycles of SCLK, the ADC is in the track mode, acquiring the input voltage. For the next 13
SCLK cycles the conversion is accomplished and the data is clocked out. SCLK falling edges 1 through 4 clock
out leading zeros while falling edges 5 through 16 clock out the conversion result, MSB first. If there is more than
one conversion in a frame (continuous conversion mode), the ADC will re-enter the track mode on the falling
edge of SCLK after the N*16th rising edge of SCLK and re-enter the hold/convert mode on the N×16+4th falling
edge of SCLK. "N" is an integer value.
The ADC128S102 enters track mode under three different conditions. In Figure 1, CS goes low with SCLK high
and the ADC enters track mode on the first falling edge of SCLK. In the second condition, CS goes low with
SCLK low. Under this condition, the ADC automatically enters track mode and the falling edge of CS is seen as
the first falling edge of SCLK. In the third condition, CS and SCLK go low simultaneously and the ADC enters
track mode. While there is no timing restriction with respect to the falling edges of CS and SCLK, see Figure 3
for setup and hold time requirements for the falling edge of CS with respect to the rising edge of SCLK.
During each conversion, data is clocked into a control register through the DIN pin on the first 8 rising edges of
SCLK after the fall of CS. The control register is loaded with data indicating the input channel to be converted on
the subsequent conversion (see Table 2, Table 3, and Table 4).
Although the ADC128S102 is able to acquire the input signal to full resolution in the first conversion immediately
following power-up, the first conversion result after power-up will be that of a randomly selected channel.
Therefore, the user needs to incorporate a dummy conversion to set the required channel that will be used on
the subsequent conversion.
Copyright © 2008–2016, Texas Instruments Incorporated
Product Folder Links: ADC128S102QML-SP
Submit Documentation Feedback
19
ADC128S102QML-SP
SNAS411O – AUGUST 2008 – REVISED AUGUST 2016
www.ti.com
Programming (continued)
Table 2. Control Register Bits
BIT 7 (MSB)
BIT 6
BIT 5
BIT 4
BIT 3
BIT 2
BIT 1
BIT 0
DONTC
DONTC
ADD2
ADD1
ADD0
DONTC
DONTC
DONTC
Table 3. Control Register Bit Descriptions
BIT
SYMBOL
DESCRIPTION
7, 6, 2, 1, 0
DONTC
Don't care. The values of these bits do not affect the device.
5
ADD2
4
ADD1
These three bits determine which input channel will be sampled and converted at the next conversion cycle.
The mapping between codes and channels is shown in Table 4.
3
ADD0
Table 4. Input Channel Selection
20
ADD2
ADD1
ADD0
INPUT CHANNEL
0
0
0
IN0
0
0
1
IN1
0
1
0
IN2
0
1
1
IN3
1
0
0
IN4
1
0
1
IN5
1
1
0
IN6
1
1
1
IN7
Submit Documentation Feedback
Copyright © 2008–2016, Texas Instruments Incorporated
Product Folder Links: ADC128S102QML-SP
ADC128S102QML-SP
www.ti.com
SNAS411O – AUGUST 2008 – REVISED AUGUST 2016
8 Application and Implementation
NOTE
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.
8.1 Application Information
The ADC128S102 device is a low-power, eight-channel 12-bit ADC with ensured performance specifications from
50 kSPS to 1 MSPS. It is appropriate to utilize the ADC128S102 at sample rates below 50 kSPS by powering the
device down (de-asserting CSB) in between conversions. The Electrical Characteristics information highlights the
clock frequency where the ADC’s performance is ensured. There is no limitation on periods of time for shutdown
between conversions.
8.2 Typical Application
A typical application is shown in Figure 38. The split analog and digital supply pins are both powered in this
example by the Texas Instruments LP2950-N low-dropout voltage regulator. The analog supply is bypassed with
a capacitor network located close to the ADC128S102. The digital supply is separated from the analog supply by
an isolation resistor and bypassed with additional capacitors. The ADC128S102 uses the analog supply (VA) as
its reference voltage, so it is very important that VA be kept as clean as possible. Due to the low power
requirements of the ADC128S102, it is also possible to use a precision reference as a power supply.
51:
LP2950
0.1 PF
VD
22:
INPUT
1 nF
0.1 PF
1.0 PF
1.0 PF
VA
IN0
.
.
.
0.1 PF
1 PF
SCLK
CS
ADC128S102
DIN
IN7
5V
MICROPROCESSOR
DSP
DOUT
AGND
DGND
Figure 38. Typical Application Circuit
8.2.1 Design Requirements
A positive supply only data acquisition system capable of digitizing up to eight single-ended input signals ranging
from 0 to 5 V with BW = 10 kHz and a throughput up to 500 kSPS. The ADC128S102 has to interface to an MCU
whose supply is set at 5 V. If it is necessary to interface with an MCU that operates at 3.3 V or lower, VA and VD
will need to be separated and care must be taken to ensure that VA is powered before VD.
8.2.2 Detailed Design Procedure
The signal range requirement forces the design to use 5-V analog supply at VA, analog supply. This follows from
the fact that VA is also a reference potential for the ADC. If the requirement of interfacing to the MCU changes to
3.3-V, it will be necessary to change the VD supply voltage to 3.3 V. The maximum sampling rate of the
ADC128S102 when all channels (eight) are enabled is, Fs = FSCLK / (16 × 8).
Note that faster sampling rates can be achieved when fewer channels are sampled. Single channel can be
sampled at the maximum rate of Fs (single) = FSCLK / 16.
Copyright © 2008–2016, Texas Instruments Incorporated
Product Folder Links: ADC128S102QML-SP
Submit Documentation Feedback
21
ADC128S102QML-SP
SNAS411O – AUGUST 2008 – REVISED AUGUST 2016
www.ti.com
Typical Application (continued)
The VA and VD pins are separated by a 51-Ω resistor in order to minimize digital noise from corrupting the
analog reference input. If additional filtering is required, the resistor can be replaced by a ferrite bead, thus
achieving a 2nd-order filter response. Further noise consideration could be given to the SPI interface, especially
when the master MCU is capable of producing fast rising edges on the digital bus signals. Inserting small
resistances in the digital signal path may help in reducing the ground bounce, and thus improve the overall noise
performance of the system. Care should be taken when the signal source is capable of producing voltages
beyond VA. In such instances, the internal ESD diodes may start conducting. The ESD diodes are not intended
as input signal clamps. To provide the desired clamping action use Schottky diodes.
8.2.3 Application Curve
Figure 39. ENOB vs Temperature
22
Submit Documentation Feedback
Copyright © 2008–2016, Texas Instruments Incorporated
Product Folder Links: ADC128S102QML-SP
ADC128S102QML-SP
www.ti.com
SNAS411O – AUGUST 2008 – REVISED AUGUST 2016
9 Power Supply Recommendations
There are three major power supply concerns with this product: power supply sequencing, power management,
and the effect of digital supply noise on the analog supply.
9.1 Power Supply Sequence
The ADC128S102 is a dual-supply device. The two supply pins share ESD resources, so care must be exercised
to ensure that the power is applied in the correct sequence. To avoid turning on the ESD diodes, the digital
supply (VD) cannot exceed the analog supply (VA) by more than 300 mV, during a conversion cycle. Therefore,
VA must ramp up before or concurrently with VD.
9.2 Power Management
The ADC128S102 is fully powered-up whenever CS is low and fully powered-down whenever CS is high, with
one exception. If operating in continuous conversion mode, the ADC128S102 automatically enters power-down
mode between SCLK's 16th falling edge of a conversion and SCLK's 1st falling edge of the subsequent
conversion (see Figure 1).
In continuous conversion mode, the ADC128S102 can perform multiple conversions back to back. Each
conversion requires 16 SCLK cycles and the ADC128S102 will perform conversions continuously as long as CS
is held low. Continuous mode offers maximum throughput.
In burst mode, the user may trade off throughput for power consumption by performing fewer conversions per
unit time. This means spending more time in power-down mode and less time in normal mode. By utilizing this
technique, the user can achieve very low sample rates while still utilizing an SCLK frequency within the electrical
specifications. The Power Consumption versus SCLK curve in the Typical Characteristics shows the typical
power consumption of the ADC128S102. To calculate the power consumption (PC), simply multiply the fraction of
time spent in the normal mode (tN) by the normal mode power consumption (PN), and add the fraction of time
spent in shutdown mode (tS) multiplied by the shutdown mode power consumption (PS) as shown in Equation 1.
PC =
tS
tN
´ PN +
´ PS
tN + t S
tN + t S
(1)
9.3 Power Supply Noise Considerations
The charging of any output load capacitance requires current from the digital supply, VD. The current pulses
required from the supply to charge the output capacitance will cause voltage variations on the digital supply. If
these variations are large enough, they could degrade SNR and SINAD performance of the ADC. Furthermore, if
the analog and digital supplies are tied directly together, the noise on the digital supply will be coupled directly
into the analog supply, causing greater performance degradation than would noise on the digital supply alone.
Similarly, discharging the output capacitance when the digital output goes from a logic high to a logic low will
dump current into the die substrate, which is resistive. Load discharge currents will cause "ground bounce" noise
in the substrate that will degrade noise performance if that current is large enough. The larger the output
capacitance, the more current flows through the die substrate and the greater the noise coupled into the analog
channel.
The first solution to keeping digital noise out of the analog supply is to decouple the analog and digital supplies
from each other or use separate supplies for them. To keep noise out of the digital supply, keep the output load
capacitance as small as practical. If the load capacitance is greater than 50 pF, use a 100-Ω series resistor at
the ADC output, located as close to the ADC output pin as practical. This will limit the charge and discharge
current of the output capacitance and improve noise performance. Because the series resistor and the load
capacitance form a low frequency pole, verify signal integrity once the series resistor has been added.
Copyright © 2008–2016, Texas Instruments Incorporated
Product Folder Links: ADC128S102QML-SP
Submit Documentation Feedback
23
ADC128S102QML-SP
SNAS411O – AUGUST 2008 – REVISED AUGUST 2016
www.ti.com
10 Layout
10.1 Layout Guidelines
Capacitive coupling between the noisy digital circuitry and the sensitive analog circuitry can lead to poor
performance. The solution is to keep the analog circuitry separated from the digital circuitry and the clock line as
short as possible.
Digital circuits create substantial supply and ground current transients. The logic noise generated could have
significant impact upon system noise performance. To avoid performance degradation of the ADC128S102 due
to supply noise, do not use the same supply for the ADC128S102 that is used for digital logic.
Generally, analog and digital lines should cross each other at 90° to avoid crosstalk. However, to maximize
accuracy in high resolution systems, avoid crossing analog and digital lines altogether. It is important to keep
clock lines as short as possible and isolated from ALL other lines, including other digital lines. In addition, the
clock line should also be treated as a transmission line and be properly terminated.
The analog input should be isolated from noisy signal traces to avoid coupling of spurious signals into the input.
Any external component (for example, a filter capacitor) connected between the converter's input pins and
ground or to the reference input pin and ground should be connected to a very clean point in the ground plane.
We recommend the use of a single, uniform ground plane and the use of split power planes. The power planes
should be located within the same board layer. All analog circuitry (input amplifiers, filters, reference
components, and so forth) should be placed over the analog power plane. All digital circuitry and I/O lines should
be placed over the digital power plane. Furthermore, all components in the reference circuitry and the input
signal chain that are connected to ground should be connected together with short traces and enter the analog
ground plane at a single, quiet point.
10.2 Layout Example
ANALOG
SUPPLY
RAIL
to analog
signal sources
CS
SCLK
VA
DOUT
AGND
DIN
IN0
VD
IN1
DGND
IN2
IN7
IN3
IN6
IN4
IN5
toMCU
^ /'/d >_ ^hWW>z Z />
VIA to GROUND PLANE
GROUND PLANE
Figure 40. Layout Diagram
24
Submit Documentation Feedback
Copyright © 2008–2016, Texas Instruments Incorporated
Product Folder Links: ADC128S102QML-SP
ADC128S102QML-SP
www.ti.com
SNAS411O – AUGUST 2008 – REVISED AUGUST 2016
11 Device and Documentation Support
11.1 Device Support
11.1.1 Development Support
For related documentation, see the following:
• 5962R07727
• Radiation Report
• MIL-STD-883G, Test Method 1019.7
11.1.2 Device Nomenclature
11.1.2.1 Specification Definitions
ACQUISITION TIME is the time required for the ADC to acquire the input voltage. During this time, the hold
capacitor is charged by the input voltage.
APERTURE DELAY is the time between the fourth falling edge of SCLK and the time when the input signal is
internally acquired or held for conversion.
CHANNEL-TO-CHANNEL ISOLATION is resistance to coupling of energy from one channel into another
channel.
CONVERSION TIME is the time required, after the input voltage is acquired, for the ADC to convert the input
voltage to a digital word.
CROSSTALK is the coupling of energy from one channel into another channel. This is similar to Channel-toChannel Isolation, except for the sign of the data.
DIFFERENTIAL NON-LINEARITY (DNL) is the measure of the maximum deviation from the ideal step size of 1
LSB.
DUTY CYCLE is the ratio of the time that a repetitive digital waveform is high to the total time of one period. The
specification here refers to the SCLK.
EFFECTIVE NUMBER OF BITS (ENOB, or EFFECTIVE BITS) is another method of specifying Signal-to-Noise
and Distortion or SINAD. ENOB is defined as (SINAD - 1.76) / 6.02 and says that the converter is
equivalent to a perfect ADC of this (ENOB) number of bits.
FULL POWER BANDWIDTH is a measure of the frequency at which the reconstructed output fundamental
drops 3 dB below its low frequency value for a full scale input.
GAIN ERROR is the deviation of the last code transition (111...110) to (111...111) from the ideal (VREF - 1.5 LSB),
after adjusting for offset error.
INTEGRAL NON-LINEARITY (INL) is a measure of the deviation of each individual code from a line drawn from
negative full scale (½ LSB below the first code transition) through positive full scale (½ LSB above
the last code transition). The deviation of any given code from this straight line is measured from
the center of that code value.
INTERMODULATION DISTORTION (IMD) is the creation of additional spectral components as a result of two
sinusoidal frequencies being applied to an individual ADC input at the same time. It is defined as
the ratio of the power in either the second or the third order intermodulation products to the sum of
the power in both of the original frequencies. Second order products are fa ± fb, where fa and fb are
the two sine wave input frequencies. Third order products are (2fa ± fb ) and (fa ± 2fb). IMD is
usually expressed in dB.
MISSING CODES are those output codes that will never appear at the ADC outputs. The ADC128S102 is
verified not to have any missing codes.
OFFSET ERROR is the deviation of the first code transition (000...000) to (000...001) from the ideal (that is, GND
+ 0.5 LSB).
SIGNAL TO NOISE RATIO (SNR) is the ratio, expressed in dB, of the rms value of the input signal to the rms
value of the sum of all other spectral components below one-half the sampling frequency, not
Copyright © 2008–2016, Texas Instruments Incorporated
Product Folder Links: ADC128S102QML-SP
Submit Documentation Feedback
25
ADC128S102QML-SP
SNAS411O – AUGUST 2008 – REVISED AUGUST 2016
www.ti.com
Device Support (continued)
including harmonics or d.c.
SIGNAL TO NOISE PLUS DISTORTION (S/N+D or SINAD) Is the ratio, expressed in dB, of the rms value of
the input signal to the rms value of all of the other spectral components below half the clock
frequency, including harmonics but excluding d.c.
SPURIOUS FREE DYNAMIC RANGE (SFDR) is the difference, expressed in dB, between the desired signal
amplitude to the amplitude of the peak spurious spectral component, where a spurious spectral
component is any signal present in the output spectrum that is not present at the input and may or
may not be a harmonic.
THROUGHPUT TIME is the minimum time required between the start of two successive conversions. It is the
acquisition time plus the conversion time.
TOTAL HARMONIC DISTORTION (THD) is the ratio, expressed in dBc, of the rms total of the first five harmonic
components at the output to the rms level of the input signal frequency as seen at the output. THD
is calculated as:
THD = 20 ‡ log 10
A f22 +
+ A f10 2
A f12
where
•
•
Af1 is the RMS power of the input frequency at the output
Af2 through Af10 are the RMS power in the first 9 harmonic frequencies
(2)
11.2 Receiving Notification of Documentation Updates
To receive notification of documentation updates, navigate to the device product folder on ti.com. In the upper
right corner, click on Alert me to register and receive a weekly digest of any product information that has
changed. For change details, review the revision history included in any revised document.
11.3 Community Resources
The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective
contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of
Use.
TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration
among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help
solve problems with fellow engineers.
Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and
contact information for technical support.
11.4 Trademarks
MICROWIRE, E2E are trademarks of Texas Instruments.
SPI, QSPI are trademarks of Motorola, Inc..
All other trademarks are the property of their respective owners.
11.5 Electrostatic Discharge Caution
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
11.6 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
26
Submit Documentation Feedback
Copyright © 2008–2016, Texas Instruments Incorporated
Product Folder Links: ADC128S102QML-SP
ADC128S102QML-SP
www.ti.com
SNAS411O – AUGUST 2008 – REVISED AUGUST 2016
12 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
12.1 Engineering Samples
Engineering samples are available for order and are identified by the "MPR" in the orderable device name (see
Packaging Information in the Addendum). Engineering (MPR) samples meet the performance specifications of
the datasheet at room temperature only and have not received the full space production flow or testing.
Engineering samples may be QCI rejects that failed tests that would not impact the performance at room
temperature, such as radiation or reliability testing.
Copyright © 2008–2016, Texas Instruments Incorporated
Product Folder Links: ADC128S102QML-SP
Submit Documentation Feedback
27
PACKAGE OPTION ADDENDUM
www.ti.com
17-Feb-2017
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
Lead/Ball Finish
MSL Peak Temp
(2)
(6)
(3)
Op Temp (°C)
Device Marking
(4/5)
5962R0722701V9A
ACTIVE
DIESALE
Y
0
20
Green (RoHS
& no Sb/Br)
Call TI
Level-1-NA-UNLIM
-55 to 125
ADC128S102 MDR
ACTIVE
DIESALE
Y
0
20
Green (RoHS
& no Sb/Br)
Call TI
Level-1-NA-UNLIM
-55 to 125
ADC128S102WGMPR
ACTIVE
CFP
NAC
16
TBD
Call TI
Call TI
25 Only
ADC128S102WGRQV
ACTIVE
CFP
NAC
16
TBD
Call TI
Call TI
-55 to 125
ADC128S102
WGRQMLV Q
5962R07227
01VZA ACO
01VZA >T
ADC128S102WRQV
ACTIVE
CFP
NAD
16
TBD
Call TI
Call TI
-55 to 125
ADC128S102
WRQMLV Q
5962R07227
01VFA ACO
01VFA >T
ADC128S102
WGMPR ES ACO
WGMPR ES >T
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability
information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight
in homogeneous material)
(3)
MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
Addendum-Page 1
Samples
PACKAGE OPTION ADDENDUM
www.ti.com
(4)
17-Feb-2017
There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5)
Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
(6)
Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the finish
value exceeds the maximum column width.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
Addendum-Page 2
MECHANICAL DATA
NAD0016A
W16A (Rev T)
www.ti.com
MECHANICAL DATA
NAC0016A
WG16A (RevG)
www.ti.com
IMPORTANT NOTICE FOR TI DESIGN INFORMATION AND RESOURCES
Texas Instruments Incorporated (‘TI”) technical, application or other design advice, services or information, including, but not limited to,
reference designs and materials relating to evaluation modules, (collectively, “TI Resources”) are intended to assist designers who are
developing applications that incorporate TI products; by downloading, accessing or using any particular TI Resource in any way, you
(individually or, if you are acting on behalf of a company, your company) agree to use it solely for this purpose and subject to the terms of
this Notice.
TI’s provision of TI Resources does not expand or otherwise alter TI’s applicable published warranties or warranty disclaimers for TI
products, and no additional obligations or liabilities arise from TI providing such TI Resources. TI reserves the right to make corrections,
enhancements, improvements and other changes to its TI Resources.
You understand and agree that you remain responsible for using your independent analysis, evaluation and judgment in designing your
applications and that you have full and exclusive responsibility to assure the safety of your applications and compliance of your applications
(and of all TI products used in or for your applications) with all applicable regulations, laws and other applicable requirements. You
represent that, with respect to your applications, you have all the necessary expertise to create and implement safeguards that (1)
anticipate dangerous consequences of failures, (2) monitor failures and their consequences, and (3) lessen the likelihood of failures that
might cause harm and take appropriate actions. You agree that prior to using or distributing any applications that include TI products, you
will thoroughly test such applications and the functionality of such TI products as used in such applications. TI has not conducted any
testing other than that specifically described in the published documentation for a particular TI Resource.
You are authorized to use, copy and modify any individual TI Resource only in connection with the development of applications that include
the TI product(s) identified in such TI Resource. NO OTHER LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE TO
ANY OTHER TI INTELLECTUAL PROPERTY RIGHT, AND NO LICENSE TO ANY TECHNOLOGY OR INTELLECTUAL PROPERTY
RIGHT OF TI OR ANY THIRD PARTY IS GRANTED HEREIN, including but not limited to any patent right, copyright, mask work right, or
other intellectual property right relating to any combination, machine, or process in which TI products or services are used. Information
regarding or referencing third-party products or services does not constitute a license to use such products or services, or a warranty or
endorsement thereof. Use of TI Resources may require a license from a third party under the patents or other intellectual property of the
third party, or a license from TI under the patents or other intellectual property of TI.
TI RESOURCES ARE PROVIDED “AS IS” AND WITH ALL FAULTS. TI DISCLAIMS ALL OTHER WARRANTIES OR
REPRESENTATIONS, EXPRESS OR IMPLIED, REGARDING TI RESOURCES OR USE THEREOF, INCLUDING BUT NOT LIMITED TO
ACCURACY OR COMPLETENESS, TITLE, ANY EPIDEMIC FAILURE WARRANTY AND ANY IMPLIED WARRANTIES OF
MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE, AND NON-INFRINGEMENT OF ANY THIRD PARTY INTELLECTUAL
PROPERTY RIGHTS.
TI SHALL NOT BE LIABLE FOR AND SHALL NOT DEFEND OR INDEMNIFY YOU AGAINST ANY CLAIM, INCLUDING BUT NOT
LIMITED TO ANY INFRINGEMENT CLAIM THAT RELATES TO OR IS BASED ON ANY COMBINATION OF PRODUCTS EVEN IF
DESCRIBED IN TI RESOURCES OR OTHERWISE. IN NO EVENT SHALL TI BE LIABLE FOR ANY ACTUAL, DIRECT, SPECIAL,
COLLATERAL, INDIRECT, PUNITIVE, INCIDENTAL, CONSEQUENTIAL OR EXEMPLARY DAMAGES IN CONNECTION WITH OR
ARISING OUT OF TI RESOURCES OR USE THEREOF, AND REGARDLESS OF WHETHER TI HAS BEEN ADVISED OF THE
POSSIBILITY OF SUCH DAMAGES.
You agree to fully indemnify TI and its representatives against any damages, costs, losses, and/or liabilities arising out of your noncompliance with the terms and provisions of this Notice.
This Notice applies to TI Resources. Additional terms apply to the use and purchase of certain types of materials, TI products and services.
These include; without limitation, TI’s standard terms for semiconductor products http://www.ti.com/sc/docs/stdterms.htm), evaluation
modules, and samples (http://www.ti.com/sc/docs/sampterms.htm).
Mailing Address: Texas Instruments, Post Office Box 655303, Dallas, Texas 75265
Copyright © 2017, Texas Instruments Incorporated