IRF AUIRF3305 Advanced planar technology Datasheet

PD - 96336
AUTOMOTIVE MOSFET
AUIRF3305
HEXFET® Power MOSFET
Features
l
l
l
l
l
l
l
l
l
V(BR)DSS
D
Advanced Planar Technology
Low On-Resistance
Dynamic dV/dT Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
G
S
55V
RDS(on) max.
8mΩ
ID
140A
Description
Specifically designed for Automotive applications, this cellular
design of HEXFET® Power MOSFETs utilizes the latest
processing techniques to achieve low on-resistance per
silicon area. This benefit combined with the fast switching
speed and ruggedized device design that HEXFET power
MOSFETs are well known for, provides the designer with an
extremely efficient and reliable device for use in Automotive
and a wide variety of other applications.
TO-220AB
G
D
S
Gate
Drain
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are
stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the
specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (TA) is 25°C, unless otherwise specified.
Max.
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
EAS (Tested )
IAR
EAR
TJ
TSTG
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy(Thermally limited)
Single Pulse Avalanche Energy Tested Value
Avalanche Current
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds(1.6mm from case )
Mounting Torque, 6-32 or M3 screw
c
c
dh
g
d
i
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
A
W
W/°C
V
mJ
A
mJ
-55 to + 175
°C
300
10 lbf in (1.1N m)
y
Thermal Resistance
RθJC
RθCS
RθJA
Units
140
99
560
330
2.2
± 20
470
860
See Fig.12a, 12b, 15, 16
y
Typ.
Max.
Units
–––
0.50
–––
0.45
–––
62
°C/W
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
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1
11/02/10
AUIRF3305
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)DSS
∆V(BR)DSS/∆TJ
RDS(on)
VGS(th)
gfs
IDSS
IGSS
Min.
Typ.
Max.
Units
55
–––
–––
2.0
41
–––
–––
–––
–––
–––
0.055
–––
–––
–––
–––
–––
–––
–––
–––
–––
8.0
4.0
–––
25
250
200
-200
V
V/°C
mΩ
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
V
S
µA
nA
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 75A
VDS = VGS, ID = 250µA
VDS = 25V, ID = 75A
VDS = 55V, VGS = 0V
VDS = 55V, VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
ej
j
j
e
j
e
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LD
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
–––
–––
–––
–––
–––
–––
–––
–––
100
21
45
16
88
43
34
4.5
150
–––
–––
–––
–––
–––
–––
–––
LS
Internal Source Inductance
–––
7.5
–––
6mm (0.25in.)
from package
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
–––
–––
–––
–––
–––
–––
3650
1230
450
4720
930
1490
–––
–––
–––
–––
–––
–––
and center of die contact
VGS = 0V
VDS = 25V
ƒ = 1.0MHz
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 0V, VDS = 44V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 44V
nC
ns
nH
pF
ID = 75A
VDS = 44V
VGS = 10V
VDD = 28V
ID = 75A
RG = 2.6 Ω
VGS = 10V
Between lead,
f
Diode Characteristics
Min.
Typ.
Max.
IS
Continuous Source Current
Parameter
–––
–––
75
ISM
(Body Diode)
Pulsed Source Current
–––
–––
560
VSD
trr
Qrr
ton
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
–––
–––
–––
–––
57
130
1.3
86
190
Units
A
c
Conditions
MOSFET symbol
V
ns
nC
showing the
integral reverse
p-n junction diode.
TJ = 25°C, IS = 75A
TJ = 25°C, IF = 75A
di/dt = 100A/µs
e
j, V
j, V
GS
DD
= 0V
= 28V
e
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
† This value determined from sample failure population. 100% tested to this
value in production.
(See fig. 11).
‚ Limited by TJmax, starting TJ = 25°C, L = 0.17mH RG = 25Ω, IAS = 75A, ‡ Rθ is measured at TJ of approximately 90°C.
ˆ All AC and DC test conditions based on former package limited
VGS =10V. Part not recommended for use above this value.
current of 75A.
ƒ Pulse width ≤ 1.0ms; duty cycle ≤ 2%.
„ Coss eff. is a fixed capacitance that gives the same charging time as
Coss while VDS is rising from 0 to 80% VDSS .
Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive
avalanche performance.
 Repetitive rating; pulse width limited by max. junction temperature.
2
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AUIRF3305
Qualification Information†
Automotive
(per AEC-Q101)
Qualification Level
Moisture Sensitivity Level
Machine Model
ESD
Human Body Model
Charged Device Model
RoHS Compliant
††
Comments: This part number(s) passed Automotive qualification. IR’s
Industrial and Consumer qualification level is granted by extension of
the higher Automotive level.
3L-TO-220
N/A
Class M4(425V)
(per AEC-Q101-002)
Class H2 (4000V)
(per AEC-Q101-001)
Class C5 (1125V)
(per AEC-Q101-005)
Yes
† Qualification standards can be found at International Rectifier’s web site: http//www.irf.com/
†† Exceptions to AEC-Q101 requirements are noted in the qualification report.
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3
AUIRF3305
1000
1000
BOTTOM
TOP
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
TOP
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
100
4.5V
10
4.5V
10
10
1
100
≤ 60µs PULSE WIDTH
Tj = 175°C
≤ 60µs PULSE WIDTH
Tj = 25°C
0.1
BOTTOM
0.1
100
Fig 1. Typical Output Characteristics
10
100
Fig 2. Typical Output Characteristics
80
Gfs, Forward Transconductance (S)
1000.0
ID, Drain-to-Source Current(Α)
1
VDS, Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
100.0
TJ = 175°C
10.0
TJ = 25°C
1.0
VDS = 25V
≤ 60µs PULSE WIDTH
2.0
3.0
4.0
5.0
6.0
7.0
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
TJ = 25°C
60
TJ = 175°C
40
20
VDS = 10V
380µs PULSE WIDTH
0.1
4
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
8.0
0
0
20
40
60
80
100
120
140
ID, Drain-to-Source Current (A)
Fig 4. Typical Forward Transconductance
Vs. Drain Current
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AUIRF3305
7000
VGS, Gate-to-Source Voltage (V)
6000
C, Capacitance (pF)
20
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
5000
Ciss
4000
3000
Coss
2000
1000
Crss
ID= 75A
16
12
8
4
0
0
1
10
0
100
80
10000
ID, Drain-to-Source Current (A)
1000.0
TJ = 175°C
100.0
10.0
TJ = 25°C
1.0
1000
100
100µsec
10
1msec
1
Tc = 25°C
Tj = 175°C
Single Pulse
10msec
DC
0.1
0.1
0.4
0.8
1.2
1.6
2.0
VSD , Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
160
OPERATION IN THIS AREA
LIMITED BY R DS(on)
VGS = 0V
0.0
120
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
ISD, Reverse Drain Current (A)
40
QG Total Gate Charge (nC)
VDS, Drain-to-Source Voltage (V)
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VDS = 44V
VDS= 28V
2.4
1
10
100
1000
VDS , Drain-toSource Voltage (V)
Fig 8. Maximum Safe Operating Area
5
AUIRF3305
160
RDS(on) , Drain-to-Source On Resistance
(Normalized)
2.5
ID , Drain Current (A)
140
120
100
80
60
40
20
0
25
50
75
100
125
150
ID = 75A
VGS = 10V
2.0
1.5
1.0
0.5
175
-60 -40 -20
T C , Case Temperature (°C)
0
20 40 60 80 100 120 140 160 180
TJ , Junction Temperature (°C)
Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 10. Normalized On-Resistance
Vs. Temperature
1
Thermal Response ( ZthJC )
D = 0.50
0.1
0.20
0.10
0.05
0.02
0.01
0.01
τJ
R1
R1
τJ
τ1
τ1
R2
R2
τ2
τ2
R3
R3
τ3
τC
τ
Ri (°C/W) τi (sec)
0.1758 0.00045
τ3
Ci= τi/Ri
Ci i/Ri
0.001
0.228
0.004565
0.0457
0.01858
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
SINGLE PULSE
( THERMAL RESPONSE )
0.0001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6
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15V
D.U.T
RG
VGS
20V
DRIVER
L
VDS
+
V
- DD
IAS
A
0.01Ω
tp
Fig 12a. Unclamped Inductive Test Circuit
EAS, Single Pulse Avalanche Energy (mJ)
AUIRF3305
2000
I D
18A
26A
BOTTOM 75A
TOP
1600
1200
800
400
0
25
V(BR)DSS
50
75
100
125
150
175
Starting TJ, Junction Temperature (°C)
tp
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
I AS
Fig 12b. Unclamped Inductive Waveforms
VGS(th) Gate threshold Voltage (V)
4.0
QG
10 V
QGS
QGD
VG
Charge
Fig 13a. Basic Gate Charge Waveform
ID = 5.0A
ID = 1.0A
ID = 250µA
3.5
3.0
2.5
2.0
1.5
1.0
-75 -50 -25
0
25
50
75
100 125 150 175
TJ , Temperature ( °C )
L
DUT
0
VCC
Fig 14. Threshold Voltage Vs. Temperature
1K
Fig 13b. Gate Charge Test Circuit
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AUIRF3305
Avalanche Current (A)
10000
1000
Duty Cycle = Single Pulse
Allowed avalanche Current vs
avalanche pulsewidth, tav
assuming ∆Tj = 25°C due to
avalanche losses. Note: In no
case should Tj be allowed to
exceed Tjmax
0.01
100
0.05
0.10
10
1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 15. Typical Avalanche Current Vs.Pulsewidth
EAR , Avalanche Energy (mJ)
500
TOP
Single Pulse
BOTTOM 1% Duty Cycle
ID = 75A
400
300
200
100
0
25
50
75
100
125
150
Starting TJ , Junction Temperature (°C)
Fig 16. Maximum Avalanche Energy
Vs. Temperature
8
175
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of Tjmax. This is validated for
every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is
not exceeded.
3. Equation below based on circuit and waveforms shown in
Figures 12a, 12b.
4. PD (ave) = Average power dissipation per single
avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for
voltage increase during avalanche).
6. Iav = Allowable avalanche current.
7. ∆T = Allowable rise in junction temperature, not to exceed
Tjmax (assumed as 25°C in Figure 15, 16).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav ) = Transient thermal resistance, see figure 11)
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
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AUIRF3305
D.U.T
Driver Gate Drive
P.W.
+
ƒ
-
D=
Period
P.W.
Period
VGS=10V*
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
D.U.T. ISD Waveform
+
‚
-
-
„
Reverse
Recovery
Current
+
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt

RG
•
•
•
•
VDD
dv/dt controlled by RG
Driver same type as D.U.T.
I SD controlled by Duty Factor "D"
D.U.T. - Device Under Test
+
Re-Applied
Voltage
Body Diode
VDD
Forward Drop
Inductor Curent
-
Ripple ≤ 5%
ISD
* VGS = 5V for Logic Level Devices
Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs
VDS
V GS
RD
D.U.T.
RG
+
- VDD
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 18a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on)
tr
t d(off)
tf
Fig 18b. Switching Time Waveforms
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9
AUIRF3305
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
TO-220AB Part Marking Information
Part Number
AUF3305
YWWA
IR Logo
XX
or
Date Code
Y= Year
WW= Work Week
A= Automotive, Lead Free
XX
Lot Code
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
10
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AUIRF3305
Ordering Information
Base part
Package Type
AUIRF3305
TO-220
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Standard Pack
Form
Tube
Complete Part Number
Quantity
50
AUIRF3305
11
AUIRF3305
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right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time
and to discontinue any product or services without notice. Part numbers designated with the “AU” prefix follow automotive industry
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warranty. Testing and other quality control techniques are used to the extent IR deems necessary to support this warranty. Except
where mandated by government requirements, testing of all parameters of each product is not necessarily performed.
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