AO4484 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4484/L uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This is an all purpose device that is suitable for use in a wide range of power conversion applications. AO4484 and AO4484L are electrically identical. -RoHS Compliant -AO4484L is Halogen Free VDS (V) = 40V ID = 10A RDS(ON) < 10mΩ RDS(ON) < 12mΩ (VGS = 10V) (VGS = 10V) (VGS = 4.5V) D S D S D S D G D G S SOIC-8 Absolute Maximum Ratings TJ=25°C unless otherwise noted Symbol 10 Sec Steady State Parameter VDS Drain-Source Voltage 40 VGS ±20 Gate-Source Voltage TA=25°C Continuous Drain Current A TA=70°C Pulsed Drain Current ID IDM B Avalanche Current G Repetitive avalanche energy L=0.3mH Power Dissipation A G TA=25°C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Alpha & Omega Semiconductor, Ltd. 10.8 8 IAR 23 EAR 79 TJ, TSTG Symbol t ≤ 10s Steady State Steady State 10 120 PD TA=70°C 13.5 RθJA RθJL V A mJ 3.1 1.7 2.0 1.1 -55 to 150 Typ 31 59 16 Units V Max 40 75 24 W °C Units °C/W °C/W °C/W www.aosmd.com AO4484 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID = 250µA, VGS = 0V 1 TJ = 55°C 5 Gate-Body leakage current VDS = 0V, VGS = ±20V VGS(th) Gate Threshold Voltage VDS = VGS ID = 250µA 1.7 ID(ON) On state drain current VGS = 10V, VDS = 5V 120 ±100 VGS = 10V, ID = 10A TJ=125°C VDS = 5V, ID = 10A 75 0.72 Output Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg (10V) Total Gate Charge Qg (4.5V) Total Gate Charge Qgs Gate Source Charge Qgd tD(on) 1500 VGS=0V, VDS=20V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=20V, ID=10A 2 µA nA V A 16 DYNAMIC PARAMETERS Ciss Input Capacitance Reverse Transfer Capacitance 10 12.5 Diode Forward Voltage IS = 1A,VGS = 0V Maximum Body-Diode Continuous Current Crss 8.2 10 VSD Coss 3 12.5 Forward Transconductance IS 2.2 VGS = 4.5V, ID = 8A gFS Units V VDS = 40V, VGS = 0V Static Drain-Source On-Resistance Max 40 IGSS RDS(ON) Typ mΩ S 1 V 2.5 A 1950 pF 215 pF 135 pF 3.5 5 Ω 27.2 37 nC 13.6 18 nC 4.5 nC Gate Drain Charge 6.4 nC Turn-On DelayTime 6.4 ns 17.2 ns 29.6 ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime VGS=10V, VDS=20V, RL= 2Ω, RGEN=3Ω tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=10A, dI/dt=100A/µs 30 Qrr Body Diode Reverse Recovery Charge IF=10A, dI/dt=100A/µs 19 16.8 ns 40 ns nC A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A = 25°C. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using t ≤ 300µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. 0 F. The current rating is based on the t ≤ 10s thermal resistance rating. G. EAR and IAR ratings are based on low frequency and duty cycles to keep T j=25C. Rev0 April 2008 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha Omega Semiconductor, Ltd. www.aosmd.com AO4484 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 120 10V VDS= 5V 4.5V 100 80 60 4V 60 ID(A) ID (A) 80 40 40 3.5V 125°C 20 20 25°C VGS= 3V 0 0 0 1 2 3 4 5 2 16 12 Normalized On-Resistance RDS(ON) (mΩ) 3 3.5 4 4.5 1.8 14 VGS= 4.5V 10 8 VGS= 10V 6 4 0 5 10 VGS= 10V ID= 10A 1.6 1.4 VGS= 4.5V ID=8A 1.2 1.0 0.8 IF=-6.5A, 15 dI/dt=100A/µs 20 0 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1E+02 25 ID= 10A 1E+01 20 1E+00 IS (A) RDS(ON) (mΩ) 2.5 VGS(Volts) Figure 2: Transfer Characteristics VDS (Volts) Figure 1: On-Region Characteristics 125°C 15 1E-01 125°C 1E-02 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING 1E-03 10 25°C 25°C OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, 1E-04 FUNCTIONS AND RELIABILITY WITHOUT NOTICE. 1E-05 5 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics www.aosmd.com AO4484 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 2500 10 VDS= 20V ID= 10A 2000 Capacitance (pF) VGS (Volts) 8 6 4 Ciss 1500 1000 2 500 0 0 Coss Crss 0 5 10 15 20 25 0 30 10 20 30 1000 1000 TJ(Max)=150°C TA=25°C 100 10 100µs RDS(ON) limited 1 0.1 1m 10ms 100ms 10s TJ(Max)=150°C TA=25°C DC 0.01 0.1 Power (W) ID (Amps) 10µs 10 100 1 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=75°C/W 10 0.01 1 100 Pulse Width (s) Figure 10: Single Pulse Power Rating Junctionto-Ambient (Note E) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100 1 0.0001 IF=-6.5A, dI/dt=100A/µs 1 VDS (Volts) ZθJA Normalized Transient Thermal Resistance 40 VDS (Volts) Figure 8: Capacitance Characteristics Qg (nC) Figure 7: Gate-Charge Characteristics In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL PD COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH 0.01 APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, Ton FUNCTIONS AND RELIABILITY WITHOUT SingleNOTICE. Pulse T 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance(Note E) Alpha Omega Semiconductor, Ltd. www.aosmd.com