AOSMD AO4484 N-channel enhancement mode field effect transistor Datasheet

AO4484
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AO4484/L uses advanced trench technology to
provide excellent RDS(ON) with low gate charge. This is
an all purpose device that is suitable for use in a wide
range of power conversion applications.
AO4484 and AO4484L are electrically identical.
-RoHS Compliant
-AO4484L is Halogen Free
VDS (V) = 40V
ID = 10A
RDS(ON) < 10mΩ
RDS(ON) < 12mΩ
(VGS = 10V)
(VGS = 10V)
(VGS = 4.5V)
D
S
D
S
D
S
D
G
D
G
S
SOIC-8
Absolute Maximum Ratings TJ=25°C unless otherwise noted
Symbol
10 Sec
Steady State
Parameter
VDS
Drain-Source Voltage
40
VGS
±20
Gate-Source Voltage
TA=25°C
Continuous Drain
Current A
TA=70°C
Pulsed Drain Current
ID
IDM
B
Avalanche Current G
Repetitive avalanche energy L=0.3mH
Power Dissipation
A
G
TA=25°C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
Alpha & Omega Semiconductor, Ltd.
10.8
8
IAR
23
EAR
79
TJ, TSTG
Symbol
t ≤ 10s
Steady State
Steady State
10
120
PD
TA=70°C
13.5
RθJA
RθJL
V
A
mJ
3.1
1.7
2.0
1.1
-55 to 150
Typ
31
59
16
Units
V
Max
40
75
24
W
°C
Units
°C/W
°C/W
°C/W
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AO4484
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID = 250µA, VGS = 0V
1
TJ = 55°C
5
Gate-Body leakage current
VDS = 0V, VGS = ±20V
VGS(th)
Gate Threshold Voltage
VDS = VGS ID = 250µA
1.7
ID(ON)
On state drain current
VGS = 10V, VDS = 5V
120
±100
VGS = 10V, ID = 10A
TJ=125°C
VDS = 5V, ID = 10A
75
0.72
Output Capacitance
Rg
Gate resistance
SWITCHING PARAMETERS
Qg (10V) Total Gate Charge
Qg (4.5V) Total Gate Charge
Qgs
Gate Source Charge
Qgd
tD(on)
1500
VGS=0V, VDS=20V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
VGS=10V, VDS=20V, ID=10A
2
µA
nA
V
A
16
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Reverse Transfer Capacitance
10
12.5
Diode Forward Voltage
IS = 1A,VGS = 0V
Maximum Body-Diode Continuous Current
Crss
8.2
10
VSD
Coss
3
12.5
Forward Transconductance
IS
2.2
VGS = 4.5V, ID = 8A
gFS
Units
V
VDS = 40V, VGS = 0V
Static Drain-Source On-Resistance
Max
40
IGSS
RDS(ON)
Typ
mΩ
S
1
V
2.5
A
1950
pF
215
pF
135
pF
3.5
5
Ω
27.2
37
nC
13.6
18
nC
4.5
nC
Gate Drain Charge
6.4
nC
Turn-On DelayTime
6.4
ns
17.2
ns
29.6
ns
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
VGS=10V, VDS=20V, RL= 2Ω,
RGEN=3Ω
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
IF=10A, dI/dt=100A/µs
30
Qrr
Body Diode Reverse Recovery Charge IF=10A, dI/dt=100A/µs
19
16.8
ns
40
ns
nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A = 25°C. The
value in any given application depends on the user's specific board design.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using t ≤ 300µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating.
0
F. The current rating is based on the t ≤ 10s thermal resistance rating.
G. EAR and IAR ratings are based on low frequency and duty cycles to keep T j=25C.
Rev0 April 2008
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha Omega Semiconductor, Ltd.
www.aosmd.com
AO4484
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
120
10V
VDS= 5V
4.5V
100
80
60
4V
60
ID(A)
ID (A)
80
40
40
3.5V
125°C
20
20
25°C
VGS= 3V
0
0
0
1
2
3
4
5
2
16
12
Normalized On-Resistance
RDS(ON) (mΩ)
3
3.5
4
4.5
1.8
14
VGS= 4.5V
10
8
VGS= 10V
6
4
0
5
10
VGS= 10V
ID= 10A
1.6
1.4
VGS= 4.5V
ID=8A
1.2
1.0
0.8
IF=-6.5A,
15 dI/dt=100A/µs
20
0
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
1E+02
25
ID= 10A
1E+01
20
1E+00
IS (A)
RDS(ON) (mΩ)
2.5
VGS(Volts)
Figure 2: Transfer Characteristics
VDS (Volts)
Figure 1: On-Region Characteristics
125°C
15
1E-01
125°C
1E-02
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED.
AOS DOES NOT ASSUME ANY LIABILITY ARISING
1E-03
10
25°C
25°C
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE
PRODUCT DESIGN,
1E-04
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
1E-05
5
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha Omega Semiconductor, Ltd.
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics
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AO4484
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
2500
10
VDS= 20V
ID= 10A
2000
Capacitance (pF)
VGS (Volts)
8
6
4
Ciss
1500
1000
2
500
0
0
Coss
Crss
0
5
10
15
20
25
0
30
10
20
30
1000
1000
TJ(Max)=150°C
TA=25°C
100
10
100µs
RDS(ON)
limited
1
0.1
1m
10ms
100ms
10s
TJ(Max)=150°C
TA=25°C
DC
0.01
0.1
Power (W)
ID (Amps)
10µs
10
100
1
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=75°C/W
10
0.01
1
100
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junctionto-Ambient (Note E)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
100
1
0.0001
IF=-6.5A, dI/dt=100A/µs
1
VDS (Volts)
ZθJA Normalized Transient
Thermal Resistance
40
VDS (Volts)
Figure 8: Capacitance Characteristics
Qg (nC)
Figure 7: Gate-Charge Characteristics
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
PD
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES
NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH
0.01 APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
Ton
FUNCTIONS AND RELIABILITY WITHOUT
SingleNOTICE.
Pulse
T
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance(Note E)
Alpha Omega Semiconductor, Ltd.
www.aosmd.com
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