BC556 / BC557 / BC558 / BC559 / BC560 PNP Epitaxial Silicon Transistor Features • • • • Switching and Amplifier High-Voltage: BC556, VCEO = -65 V Low-Noise: BC559, BC560 Complement to BC546, BC547, BC548, BC549, and BC550 1 TO-92 1. Collector 2. Base 3. Emitter Ordering Information Part Number Marking Package Packing Method BC556ABU BC556A TO-92 3L Bulk BC556ATA BC556A TO-92 3L Ammo BC556BTA BC556B TO-92 3L Ammo BC556BTF BC556B TO-92 3L Tape and Reel BC556BTFR BC556B TO-92 3L Tape and Reel BC557ATA BC557A TO-92 3L Ammo BC557BTA BC557B TO-92 3L Ammo BC557BTF BC557B TO-92 3L Tape and Reel BC558BTA BC558B TO-92 3L Ammo BC559BTA BC559B TO-92 3L Ammo BC559CTA BC559C TO-92 3L Ammo BC560CTA BC560C TO-92 3L Ammo © 2002 Fairchild Semiconductor Corporation BC556 / BC557 / BC558 / BC559 / BC560 Rev. 1.1.0 www.fairchildsemi.com 1 BC556 / BC557 / BC558 / BC559 / BC560 — PNP Epitaxial Silicon Transistor April 2014 Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted. Symbol VCBO VCEO Parameter Collector-Base Voltage Collector-Emitter Voltage Value BC556 -80 BC557 / BC560 -50 BC558 / BC559 -30 BC556 -65 BC557 / BC560 -45 BC558 / BC559 -30 Unit V V VEBO Emitter-Base Voltage -5 V IC Collector Current (DC) -100 mA PC Collector Power Dissipation 500 mW TJ Junction Temperature 150 °C -65 to +150 °C TSTG Storage Temperature Range Electrical Characteristics Values are at TA = 25°C unless otherwise noted. Symbol Parameter Conditions Min. Typ. Max. Unit -15 nA ICBO Collector Cut-Off Current VCB = -30 V, IE = 0 hFE DC Current Gain VCE = -5 V, IC = -2 mA VCE(sat) Collector-Emitter Saturation Voltage IC = -10 mA, IB = -0.5 mA -90 -300 IC = -100 mA, IB = -5 mA -250 -650 VBE(sat) Collector-Base Saturation Voltage IC = -10 mA, IB = -0.5 mA -700 IC = -100 mA, IB = -5 mA -900 VBE(on) Base-Emitter On Voltage fT Cob NF 110 VCE = -5 V, IC = -2 mA -600 -660 VCE = -5 V, IC = -10 mA VCE = -5 V, IC = -10 mA, f = 10 MHz Output Capacitance VCB = -10 V, IE = 0, f = 1 MHz BC556 / BC557 / BC558 VCE = -5 V, IC = -200 μA, f = 1 kHz, RG = 2 kΩ BC559 / BC560 VCE = -5 V, IC = -200 μA, RG = 2 kΩ, f = 30 to 15000 MHz BC559 BC560 -750 150 mV MHz 6 2 mV mV -800 Current Gain Bandwidth Product Noise Figure 800 pF 10 1 4 1.2 4.0 1.2 2.0 dB hFE Classification Classification A B C hFE 110 ~ 220 200 ~ 450 420 ~ 800 © 2002 Fairchild Semiconductor Corporation BC556 / BC557 / BC558 / BC559 / BC560 Rev. 1.1.0 www.fairchildsemi.com 2 BC556 / BC557 / BC558 / BC559 / BC560 — PNP Epitaxial Silicon Transistor Absolute Maximum Ratings 1000 -50 IB = -350μA -40 IB = -300μA -35 hFE, DC CURRENT GAIN IC[mA], COLLECTOR CURRENT VCE = -5V IB = -400μA -45 IB = -250μA -30 IB = -200μA -25 -20 IB = -150μA -15 IB = -100μA -10 100 10 IB = -50μA -5 1 -0.1 -0 -2 -4 -6 -8 -10 -12 -14 -16 -18 -20 -1 VCE[V], COLLECTOR-EMITTER VOLTAGE -100 IC = -10 IB VCE = -5V IC[mA], COLLECTOR CURRENT VBE(sat), VCE(sat)[V], SATURATION VOLTAGE Figure 2. DC Current Gain -10 VBE(sat) -0.1 VCE(sat) -0.01 -0.1 -10 -1 -0.1 -1 -10 -0.2 -100 -0.4 f=1MHz IE = 0 1 -10 -100 -1.0 -1.2 1000 VCE = -5V 100 10 -1 -10 IC[mA], COLLECTOR CURRENT VCB[V], COLLECTOR-BASE VOLTAGE Figure 5. Collector Output Capacitance © 2002 Fairchild Semiconductor Corporation BC556 / BC557 / BC558 / BC559 / BC560 Rev. 1.1.0 -0.8 Figure 4. Base-Emitter On Voltage fT[MHz], CURRENT GAIN-BANDWIDTH PRODUCT Cob(pF), CAPACITANCE Figure 3. Base-Emitter Saturation Voltage and Collector-Emitter Saturation Voltage 10 -0.6 VBE[V], BASE-EMITTER VOLTAGE IC[mA], COLLECTOR CURRENT -1 -100 IC[mA], COLLECTOR CURRENT Figure 1. Static Characteristic -1 -10 Figure 6. Current Gain Bandwidth Product www.fairchildsemi.com 3 BC556 / BC557 / BC558 / BC559 / BC560 — PNP Epitaxial Silicon Transistor Typical Performance Characteristics BC556 / BC557 / BC558 / BC559 / BC560 — PNP Epitaxial Silicon Transistor Physical Dimensions TO-92 (Bulk) D Figure 7. 3-LEAD, TO92, JEDEC TO-92 COMPLIANT STRAIGHT LEAD CONFIGURATION (OLD TO92AM3) Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/dwg/ZA/ZA03D.pdf. For current tape and reel specifications, visit Fairchild Semiconductor’s online packaging area: http://www.fairchildsemi.com/packing_dwg/PKG-ZA03D_BK.pdf. © 2002 Fairchild Semiconductor Corporation BC556 / BC557 / BC558 / BC559 / BC560 Rev. 1.1.0 www.fairchildsemi.com 4 BC556 / BC557 / BC558 / BC559 / BC560 — PNP Epitaxial Silicon Transistor Physical Dimensions (Continued) TO-92 (Ammo, Tape and Reel) Figure 8. 3-LEAD, TO92, MOLDED 0.200 IN LINE SPACING LEAD FORM (J61Z OPTION) Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/dwg/ZA/ZA03F.pdf. For current tape and reel specifications, visit Fairchild Semiconductor’s online packaging area: http://www.fairchildsemi.com/packing_dwg/PKG-ZA03F_BK.pdf. © 2002 Fairchild Semiconductor Corporation BC556 / BC557 / BC558 / BC559 / BC560 Rev. 1.1.0 www.fairchildsemi.com 5 TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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