Mitsubishi CR04 Low power use glass passivation type Datasheet

MITSUBISHI SEMICONDUCTOR 〈THYRISTOR〉
CR04AM
LOW POWER USE
GLASS PASSIVATION TYPE
OUTLINE DRAWING
CR04AM
Dimensions
in mm
φ5.0 MAX
5.0 MAX
4.4
VOLTAGE
CLASS
TYPE
NAME
2
3
12.5 MIN
1
1 T1 TERMINAL
2 T2 TERMINAL
3 GATE TERMINAL
CIRCUMSCRIBE
CIRCLE
φ0.7
3.9 MAX
1.3
1.25 1.25
1 3 2
• IT (AV) ........................................................................ 0.4A
• VDRM ..............................................................400V/600V
• IGT ......................................................................... 100µA
JEDEC : TO-92
APPLICATION
Ignitor, solid state relay, strobe flasher, circuit breaker, other general purpose control applications
MAXIMUM RATINGS
Symbol
Voltage class
Parameter
8
12
Unit
VRRM
Repetitive peak reverse voltage
400
600
V
VRSM
Non-repetitive peak reverse voltage
500
720
V
VR (DC)
DC reverse voltage
320
480
V
VDRM
Repetitive peak off-state voltage
✽1
400
600
V
VD (DC)
DC off-state voltage
✽1
320
480
V
Ratings
Unit
0.63
A
0.4
A
10
A
0.4
A2s
Peak gate power dissipation
0.5
W
Average gate power dissipation
0.1
W
Peak gate forward voltage
6
V
VRGM
Peak gate reverse voltage
6
V
IFGM
Peak gate forward current
0.3
Tj
Junction temperature
Symbol
Conditions
Parameter
IT (RMS)
RMS on-state current
IT (AV)
Average on-state current
Commercial frequency, sine half wave, 180° conduction, Ta=54°C
ITSM
Surge on-state current
60Hz sine half wave 1 full cycle, peak value, non-repetitive
I2t
I2t
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
PGM
PG (AV)
VFGM
for fusing
Storage temperature
Tstg
—
Weight
Typical value
A
–40 ~ +125
°C
–40 ~ +125
°C
0.23
g
✽1. With Gate-to-cathode resistance RGK =1kΩ
Feb.1999
MITSUBISHI SEMICONDUCTOR 〈THYRISTOR〉
CR04AM
LOW POWER USE
GLASS PASSIVATION TYPE
ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Limits
Test conditions
Min.
Typ.
Max.
Unit
IRRM
Repetitive peak reverse current
Tj=125°C, V RRM applied
—
—
0.5
mA
IDRM
Repetitive peak off-state current
Tj=125°C, V DRM applied, RGK=1kΩ
—
—
0.5
mA
VTM
On-state voltage
Ta=25°C, I TM=1.2A, instantaneous value
—
—
1.2
V
VGT
Gate trigger voltage
Ta=25°C, V D =6V, IT =0.1A ✽3
—
—
0.8
V
VGD
Gate non-trigger voltage
Tj=125°C, VD=1/2VDRM, RGK=1kΩ
0.2
—
—
IGT
Gate trigger current
Tj=25°C, VD =6V, IT=0.1A ✽3
1
—
IH
Holding current
Tj=25°C, VD=12V, RGK=1kΩ
—
1.5
3
R th (j-a)
Thermal resistance
Junction to ambient
—
—
150
100 ✽2
V
µA
mA
°C/W
✽2. If special values of I GT are required, choose at least two items from those listed in the table below. (Example: AB, BC)
Item
A
B
C
IGT (µA)
1 ~ 30
20 ~ 50
40 ~ 100
The above values do not include the current flowing through the 1kΩ resistance between the gate and cathode.
✽3. IGT, VGT measurement circuit.
A1
3V
DC
IGS
IGT
A3
A2
60Ω
TUT
6V
DC
V1
RGK
1 2
VGT
1kΩ
SWITCH
SWITCH 1 : IGT measurement
SWITCH 2 : VGT measurement
(Inner resistance of voltage meter is about 1kΩ)
MAXIMUM ON-STATE CHARACTERISTICS
102
7 Ta = 25°C
5
3
2
101
7
5
3
2
100
7
5
3
2
10–1
0
1
2
3
4
ON-STATE VOLTAGE (V)
5
RATED SURGE ON-STATE CURRENT
10
SURGE ON-STATE CURRENT (A)
ON-STATE CURRENT (A)
PERFORMANCE CURVES
9
8
7
6
5
4
3
2
1
0
100
2 3 4 5 7 101
2 3 4 5 7 102
CONDUCTION TIME
(CYCLES AT 60Hz)
Feb.1999
MITSUBISHI SEMICONDUCTOR 〈THYRISTOR〉
CR04AM
LOW POWER USE
GLASS PASSIVATION TYPE
GATE TRIGGER CURRENT VS.
JUNCTION TEMPERATURE
100 (%)
GATE CHARACTERISTICS
102
VFGM = 6V
PGM = 0.5W
101
7
5 VGT = 0.8V
3
2 (Tj = 25°C)
100
7
5
3
2
PG(AV) = 0.1W
IGT = 100µA
(Tj = 25°C)
IFGM = 0.3V
10–1
7
5
3
2
VGD = 0.2V
10–2
10–2 2 3 5710–12 3 57100 2 3 57101 2 3 57102 2 3
GATE TRIGGER CURRENT (Tj = t°C)
GATE TRIGGER CURRENT (Tj = 25°C)
GATE VOLTAGE (V)
7
5
3
2
103
7 TYPICAL EXAMPLE
5
3
2
102
7
5
3
2
101
7
5
3
2
100
–40 –20 0 20 40 60 80 100 120 140 160
GATE CURRENT (mA)
JUNCTION TEMPERATURE (°C)
MAXIMUM TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(JUNCTION TO AMBIENT)
GATE TRIGGER VOLTAGE (V)
1.0
,,,,,,,,,,,,,
,,,,,,,,,,,,,
,,,,,,,,,,,,,
,,,,,,,,,,,,,
,,,,,,,,,,,,,
,,,,,,,,,,,,,
,,,,,,,,,,,,,
,,,,,,,,,,,,,
,,,,,,,,,,,,,
0.9
DISTRIBUTION
0.8
TYPICAL EXAMPLE
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
–40 –20
0
20
40
60
80 100 120
TRANSIENT THERMAL IMPEDANCE (°C/W)
GATE TRIGGER VOLTAGE VS.
JUNCTION TEMPERATURE
100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103
103
7
5
3
2
102
7
5
3
2
101
7
5
3
2
100
10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100
TIME (s)
MAXIMUM AVERAGE POWER DISSIPATION
(SINGLE-PHASE HALF WAVE)
0.8
60° 120°
θ = 30°
90°
0.7
180°
0.6
0.5
0.4
0.3
0.2
θ
0.1
360°
0
0
RESISTIVE, INDUCTIVE LOADS
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
AVERAGE ON-STATE CURRENT (A)
ALLOWABLE AMBIENT TEMPERATURE VS.
AVERAGE ON-STATE CURRENT
(SINGLE-PHASE HALF WAVE)
160
AMBIENT TEMPERATURE (°C)
AVERAGE POWER DISSIPATION (W)
JUNCTION TEMPERATURE (°C)
140
θ
120
360°
RESISTIVE,
INDUCTIVE
LOADS
NATURAL
CONVECTION
100
80
60
θ = 30°
40
90°
180°
60° 120°
20
0
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
AVERAGE ON-STATE CURRENT (A)
Feb.1999
MITSUBISHI SEMICONDUCTOR 〈THYRISTOR〉
CR04AM
LOW POWER USE
MAXIMUM AVERAGE POWER DISSIPATION
(SINGLE-PHASE FULL WAVE)
0.8
θ = 30° 90°
60° 120°
0.7
180°
0.6
0.5
0.4
0.3
0.2
θ
360°
0.1
0
θ
0
ALLOWABLE AMBIENT TEMPERATURE VS.
AVERAGE ON-STATE CURRENT
(SINGLE-PHASE FULL WAVE)
160
AMBIENT TEMPERATURE (°C)
AVERAGE POWER DISSIPATION (W)
GLASS PASSIVATION TYPE
RESISTIVE LOADS
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
140
θ
120
360°
80
60
40
0.3
θ
360°
0.2
0.1
120
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
ALLOWABLE AMBIENT TEMPERATURE VS.
AVERAGE ON-STATE CURRENT
(RECTANGULAR WAVE)
160
140
θ
360°
120
RESISTIVE,
INDUCTIVE
LOADS
NATURAL
CONVECTION
100
80
60
40
20
0
θ = 30°
0
60° 120°
270°
90° 180°
DC
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
AVERAGE ON-STATE CURRENT (A)
AVERAGE ON-STATE CURRENT (A)
BREAKOVER VOLTAGE VS.
JUNCTION TEMPERATURE
BREAKOVER VOLTAGE VS.
GATE TO CATHODE RESISTANCE
100 (%)
160
0
0
180°
AVERAGE ON-STATE CURRENT (A)
TYPICAL EXAMPLE
140
120
TYPICAL EXAMPLE
100
100
80
60
40
20
RGK = 1kΩ
0
–40 –20 0 20 40 60 80 100 120 140 160
JUNCTION TEMPERATURE (°C)
BREAKOVER VOLTAGE (RGK = rkΩ)
BREAKOVER VOLTAGE (RGK = 1kΩ)
100 (%)
0
RESISTIVE,
INDUCTIVE
LOADS
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
θ = 30° 60° 90° 120°
20
0
AMBIENT TEMPERATURE (°C)
0.4
BREAKOVER VOLTAGE (T j = t°C)
BREAKOVER VOLTAGE (T j = 25°C)
AVERAGE POWER DISSIPATION (W)
0.5
RESISTIVE LOADS
NATURAL
CONVECTION
100
AVERAGE ON-STATE CURRENT (A)
MAXIMUM AVERAGE POWER DISSIPATION
(RECTANGULAR WAVE)
0.8
90° 180°
0.7
θ = 30° 60° 120° 270°
DC
0.6
θ
80
60
40
20
Tj = 125°C
0
10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102
GATE TO CATHODE RESISTANCE (kΩ)
Feb.1999
MITSUBISHI SEMICONDUCTOR 〈THYRISTOR〉
CR04AM
LOW POWER USE
120
100
80
60
40
20
,,,,,,,,,,,,
,,,,,,,,,,,,
,,,,,,,,,,,,
,,,,,,,,,,,,
,,,,,,,,,,,,
100
7
5
3
2
10–1
7
5
3
2
RATE OF RISE OF OFF-STATE VOLTAGE (V/µs)
JUNCTION TEMPERATURE (°C)
HOLDING CURRENT VS.
GATE TO CATHODE RESISTANCE
HOLDING CURRENT VS.
GATE TRIGGER CURRENT
500
4.0
TYPICAL EXAMPLE
IGT (25°C) IH (1kΩ)
# 1 25µA
0.9mA
300
200
#1
100
Tj = 25°C
3.5
3.0
2.5
2.0
1.5
1.0
0.5
Tj = 25°C
0
10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102
0
100
101
GATE TO CATHODE RESISTANCE (kΩ)
GATE TRIGGER CURRENT (µA)
TURN-ON TIME VS. GATE CURRENT
TURN-OFF TIME VS.
JUNCTION TEMPERATURE
102
7 TYPICAL EXAMPLE
5
3
2
VD = 100V
RL = 47Ω
RGK = 1kΩ
Ta = 25°C
101
7
5
3
2
100
7
5
3
2
102
40
VD = 50V, VR = 50V
IT = 2A, RGK = 1kΩ
35
TURN-OFF TIME (µs)
TURN-ON TIME (µs)
101
7 DISTRIBUTION
TYPICAL EXAMPLE
5
IGT (25°C) = 35µA
3
2
RGK = 1kΩ
10–2
–60 –40 –20 0 20 40 60 80 100 120 140
0
100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103
400
HOLDING CURRENT (RGK = rkΩ)
HOLDING CURRENT (RGK = 1kΩ)
HOLDING CURRENT VS.
JUNCTION TEMPERATURE
HOLDING CURRENT (mA)
BREAKOVER VOLTAGE VS.
RATE OF RISE OF OFF-STATE VOLTAGE
160
TYPICAL EXAMPLE
Tj = 125°C
RGK = 1kΩ
140
HOLDING CURRENT (mA)
100 (%)
BREAKOVER VOLTAGE (dv/dt = vV/µs )
BREAKOVER VOLTAGE (dv/dt = 1V/µs )
100 (%)
GLASS PASSIVATION TYPE
,,,,,,,,,,,
,,,,,,,,,,,
,,,,,,,,,,,
,,,,,,,,,,,
,,,,,,,,,,,
,,,,,,,,,,,
,,,,,,,,,,,
,,,,,,,,,,,
30
TYPICAL EXAMPLE
25 DISTRIBUTION
20
15
10
5
10–1
10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102
GATE CURRENT (mA)
0
0
20
40
60
80 100 120 140 160
JUNCTION TEMPERATURE (°C)
Feb.1999
MITSUBISHI SEMICONDUCTOR 〈THYRISTOR〉
CR04AM
LOW POWER USE
140
120
GATE TRIGGER CURRENT VS.
GATE CURRENT PULSE WIDTH
100 (%)
REPETITIVE PEAK REVERSE VOLTAGE VS.
JUNCTION TEMPERATURE
160
GATE TRIGGER CURRENT (tw)
GATE TRIGGER CURRENT (DC)
REPETITIVE PEAK REVERSE VOLTAGE (Tj = t°C)
REPETITIVE PEAK REVERSE VOLTAGE (Tj = 25°C)
100 (%)
GLASS PASSIVATION TYPE
100
80
60
40
20
0
–40 –20 0 20 40 60 80 100 120 140 160
JUNCTION TEMPERATURE (°C)
104
7
5
3
2
103
7
5
3
2
TYPICAL EXAMPLE
IGT (DC)
# 1 10µA
# 2 65µA
#1
#2
102
7
5
3
2
Tj = 25°C
101
100 2 3 4 5 7 101
2
3 4 5 7 102
GATE CURRENT PULSE WIDTH (µs)
Feb.1999
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